SG11202101756PA - Semiconductor sample inspection device and inspection method - Google Patents

Semiconductor sample inspection device and inspection method

Info

Publication number
SG11202101756PA
SG11202101756PA SG11202101756PA SG11202101756PA SG11202101756PA SG 11202101756P A SG11202101756P A SG 11202101756PA SG 11202101756P A SG11202101756P A SG 11202101756PA SG 11202101756P A SG11202101756P A SG 11202101756PA SG 11202101756P A SG11202101756P A SG 11202101756PA
Authority
SG
Singapore
Prior art keywords
semiconductor sample
inspection
inspection device
inspection method
sample inspection
Prior art date
Application number
SG11202101756PA
Inventor
Yoshitaka IWAKI
Yuji Nakajima
Toshiki Yamada
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of SG11202101756PA publication Critical patent/SG11202101756PA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0053—Noise discrimination; Analog sampling; Measuring transients
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31728—Optical aspects, e.g. opto-electronics used for testing, optical signal transmission for testing electronic circuits, electro-optic components to be tested in combination with electronic circuits, measuring light emission of digital circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Environmental & Geological Engineering (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
SG11202101756PA 2018-08-30 2019-06-05 Semiconductor sample inspection device and inspection method SG11202101756PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018161829A JP6611387B1 (en) 2018-08-30 2018-08-30 Semiconductor sample inspection apparatus and inspection method
PCT/JP2019/022423 WO2020044707A1 (en) 2018-08-30 2019-06-05 Semiconductor sample inspection device and inspection method

Publications (1)

Publication Number Publication Date
SG11202101756PA true SG11202101756PA (en) 2021-03-30

Family

ID=68692039

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202101756PA SG11202101756PA (en) 2018-08-30 2019-06-05 Semiconductor sample inspection device and inspection method

Country Status (7)

Country Link
US (1) US11573251B2 (en)
EP (1) EP3845916A4 (en)
JP (1) JP6611387B1 (en)
KR (1) KR20210049092A (en)
SG (1) SG11202101756PA (en)
TW (1) TWI791118B (en)
WO (1) WO2020044707A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803432B2 (en) * 2011-05-10 2014-08-12 Lutron Electronics Co., Inc. Method and apparatus for determining a target light intensity from a phase-control signal
JP6824351B1 (en) * 2019-09-13 2021-02-03 浜松ホトニクス株式会社 Semiconductor sample inspection equipment and inspection method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588950A (en) 1983-11-15 1986-05-13 Data Probe Corporation Test system for VLSI digital circuit and method of testing
JPH0820372B2 (en) * 1991-07-30 1996-03-04 ラトックシステムエンジニアリング株式会社 Optical inspection device
JP2765427B2 (en) 1993-04-13 1998-06-18 日本電気株式会社 Method and apparatus for inspecting interconnections inside semiconductor integrated circuit
US5708371A (en) * 1995-03-16 1998-01-13 Mitsubishi Denki Kabushiki Kaisha Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen
US6169408B1 (en) 1996-09-30 2001-01-02 Motorola, Inc. Method and apparatus for testing an integrated circuit with a pulsed radiation beam
JPH11271363A (en) * 1998-03-19 1999-10-08 Ando Electric Co Ltd Electro-optic sampling oscilloscope
JP2000131344A (en) * 1998-10-22 2000-05-12 Ando Electric Co Ltd Electro-optical sampling oscilloscope
JP2002139539A (en) * 2000-10-30 2002-05-17 Advantest Corp Power-supply current measuring method and power- supply current measuring device for semiconductor device
US6580281B2 (en) * 2001-02-22 2003-06-17 Robert A. Falk Externally induced voltage alterations for integrated circuit analysis
JP4526765B2 (en) * 2003-01-20 2010-08-18 浜松ホトニクス株式会社 Beam irradiation heating resistance change measuring device
US6963214B2 (en) * 2003-10-06 2005-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. OBIRCH dual power circuit
US7960997B2 (en) 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
JP5770528B2 (en) * 2011-05-17 2015-08-26 浜松ホトニクス株式会社 Semiconductor sample inspection equipment
JP6166032B2 (en) * 2012-11-06 2017-07-19 浜松ホトニクス株式会社 Semiconductor device inspection apparatus and semiconductor device inspection method
KR101515719B1 (en) * 2013-12-23 2015-04-27 세메스 주식회사 Probe station
US9557377B2 (en) * 2014-03-06 2017-01-31 Hamamatsu Photonics K.K. Fault analysis apparatus and fault analysis method

Also Published As

Publication number Publication date
WO2020044707A1 (en) 2020-03-05
JP6611387B1 (en) 2019-11-27
EP3845916A1 (en) 2021-07-07
TW202024655A (en) 2020-07-01
US20210325435A1 (en) 2021-10-21
KR20210049092A (en) 2021-05-04
EP3845916A4 (en) 2022-04-27
TWI791118B (en) 2023-02-01
US11573251B2 (en) 2023-02-07
JP2020034440A (en) 2020-03-05
CN112639494A (en) 2021-04-09

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