SG11202100359SA - Graphene diffusion barrier - Google Patents

Graphene diffusion barrier

Info

Publication number
SG11202100359SA
SG11202100359SA SG11202100359SA SG11202100359SA SG11202100359SA SG 11202100359S A SG11202100359S A SG 11202100359SA SG 11202100359S A SG11202100359S A SG 11202100359SA SG 11202100359S A SG11202100359S A SG 11202100359SA SG 11202100359S A SG11202100359S A SG 11202100359SA
Authority
SG
Singapore
Prior art keywords
diffusion barrier
graphene diffusion
graphene
barrier
diffusion
Prior art date
Application number
SG11202100359SA
Other languages
English (en)
Inventor
Yong Wu
Srinivas Gandikota
Abhijit Basu Mallick
Srinivas D Nemani
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202100359SA publication Critical patent/SG11202100359SA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
SG11202100359SA 2018-08-11 2019-08-09 Graphene diffusion barrier SG11202100359SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862717824P 2018-08-11 2018-08-11
PCT/US2019/045872 WO2020036819A1 (en) 2018-08-11 2019-08-09 Graphene diffusion barrier

Publications (1)

Publication Number Publication Date
SG11202100359SA true SG11202100359SA (en) 2021-02-25

Family

ID=69406405

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202100359SA SG11202100359SA (en) 2018-08-11 2019-08-09 Graphene diffusion barrier

Country Status (7)

Country Link
US (2) US10916505B2 (ja)
JP (1) JP2021534572A (ja)
KR (2) KR102637671B1 (ja)
CN (1) CN112514031A (ja)
SG (1) SG11202100359SA (ja)
TW (2) TWI807639B (ja)
WO (1) WO2020036819A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112514031A (zh) * 2018-08-11 2021-03-16 应用材料公司 石墨烯扩散阻挡物
US11251129B2 (en) * 2020-03-27 2022-02-15 Intel Corporation Deposition of graphene on a dielectric surface for next generation interconnects
WO2023121714A1 (en) * 2021-12-22 2023-06-29 General Graphene Corporation Novel systems and methods for high yield and high throughput production of graphene

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691108B2 (ja) * 1988-03-22 1994-11-14 インタ‐ナシヨナル・ビジネス・マシ‐ンズ・コ‐ポレ‐シヨン 薄膜電界効果トランジスタの製造方法
JPH0484424A (ja) * 1990-07-27 1992-03-17 Sony Corp 半導体装置の製造方法
KR100203896B1 (ko) * 1995-12-15 1999-06-15 김영환 게이트 전극 형성방법
KR100543653B1 (ko) * 1998-12-28 2006-03-28 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
KR100805843B1 (ko) * 2001-12-28 2008-02-21 에이에스엠지니텍코리아 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템
KR100968312B1 (ko) * 2004-06-02 2010-07-08 인터내셔널 비지네스 머신즈 코포레이션 저-ｋ 물질 상의 ＴａＮ 확산장벽 영역의 ＰＥ-ＡＬＤ
JP5395542B2 (ja) 2009-07-13 2014-01-22 株式会社東芝 半導体装置
US20120161098A1 (en) 2009-08-20 2012-06-28 Nec Corporation Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element
WO2012166562A1 (en) 2011-05-27 2012-12-06 University Of North Texas Graphene magnetic tunnel junction spin filters and methods of making
KR101437142B1 (ko) * 2011-10-28 2014-09-02 제일모직주식회사 그라핀 층을 함유하는 배리어 필름과 이를 포함하는 플렉시블 기판 및 그 제조방법
US9324634B2 (en) * 2011-11-08 2016-04-26 International Business Machines Corporation Semiconductor interconnect structure having a graphene-based barrier metal layer
TWI645511B (zh) * 2011-12-01 2018-12-21 美商應用材料股份有限公司 用於銅阻障層應用之摻雜的氮化鉭
US8927415B2 (en) * 2011-12-09 2015-01-06 Intermolecular, Inc. Graphene barrier layers for interconnects and methods for forming the same
KR101357046B1 (ko) * 2011-12-20 2014-02-04 (재)한국나노기술원 금속 확산 방지용 그래핀 층이 구비된 전자 소자 및 제조 방법.
US20140339700A1 (en) * 2011-12-20 2014-11-20 University Of Florida Research Foundation, Inc. Graphene-based metal diffusion barrier
CN102593097A (zh) * 2012-02-27 2012-07-18 北京大学 一种集成电路金属互连结构及其制备方法
US9472450B2 (en) 2012-05-10 2016-10-18 Samsung Electronics Co., Ltd. Graphene cap for copper interconnect structures
JP5972735B2 (ja) 2012-09-21 2016-08-17 株式会社東芝 半導体装置
CN103121670B (zh) * 2013-02-19 2015-04-29 西安交通大学 远程等离子体增强原子层沉积低温生长石墨烯的方法
JP2015138901A (ja) 2014-01-23 2015-07-30 株式会社東芝 半導体装置及びその製造方法
JP6129772B2 (ja) 2014-03-14 2017-05-17 株式会社東芝 半導体装置及び半導体装置の製造方法
US9418889B2 (en) * 2014-06-30 2016-08-16 Lam Research Corporation Selective formation of dielectric barriers for metal interconnects in semiconductor devices
KR102371295B1 (ko) * 2015-02-16 2022-03-07 삼성전자주식회사 확산 방지층을 포함하는 층 구조물 및 그 제조방법
WO2016156659A1 (en) * 2015-04-01 2016-10-06 Picosun Oy Ald-deposited graphene on a conformal seed layer
KR20160120891A (ko) 2015-04-09 2016-10-19 삼성전자주식회사 반도체 장치
KR20160124958A (ko) * 2015-04-20 2016-10-31 서울대학교산학협력단 반도체 소자 및 그 제조 방법
CN104810476A (zh) * 2015-05-07 2015-07-29 中国科学院微电子研究所 非挥发性阻变存储器件及其制备方法
JP2017050503A (ja) 2015-09-04 2017-03-09 株式会社東芝 半導体装置とその製造方法
CN105355620B (zh) * 2015-12-17 2018-06-22 上海集成电路研发中心有限公司 一种铜互连结构及其制造方法
US11139308B2 (en) * 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10319632B2 (en) * 2016-12-14 2019-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor interconnect structure having a graphene barrier layer
JP2018152413A (ja) * 2017-03-10 2018-09-27 株式会社東芝 半導体装置及びその製造方法
US10164018B1 (en) * 2017-05-30 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor interconnect structure having graphene-capped metal interconnects
KR102496377B1 (ko) * 2017-10-24 2023-02-06 삼성전자주식회사 저항변화 물질층을 가지는 비휘발성 메모리소자
CN112514031A (zh) * 2018-08-11 2021-03-16 应用材料公司 石墨烯扩散阻挡物

Also Published As

Publication number Publication date
KR20230106752A (ko) 2023-07-13
KR20210031763A (ko) 2021-03-22
TWI807639B (zh) 2023-07-01
TW202009135A (zh) 2020-03-01
WO2020036819A1 (en) 2020-02-20
US20210167021A1 (en) 2021-06-03
KR102554839B1 (ko) 2023-07-11
JP2021534572A (ja) 2021-12-09
US20200051920A1 (en) 2020-02-13
CN112514031A (zh) 2021-03-16
KR102637671B1 (ko) 2024-02-15
US10916505B2 (en) 2021-02-09
TW202223138A (zh) 2022-06-16
US11621226B2 (en) 2023-04-04
TWI758629B (zh) 2022-03-21

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