SG11202010820YA - Sputtering target for magnetic recording medium - Google Patents
Sputtering target for magnetic recording mediumInfo
- Publication number
- SG11202010820YA SG11202010820YA SG11202010820YA SG11202010820YA SG11202010820YA SG 11202010820Y A SG11202010820Y A SG 11202010820YA SG 11202010820Y A SG11202010820Y A SG 11202010820YA SG 11202010820Y A SG11202010820Y A SG 11202010820YA SG 11202010820Y A SG11202010820Y A SG 11202010820YA
- Authority
- SG
- Singapore
- Prior art keywords
- recording medium
- magnetic recording
- sputtering target
- sputtering
- target
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
- H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
- H01F1/047—Alloys characterised by their composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018143182 | 2018-07-31 | ||
PCT/JP2019/030106 WO2020027235A1 (en) | 2018-07-31 | 2019-07-25 | Sputtering target for magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202010820YA true SG11202010820YA (en) | 2021-02-25 |
Family
ID=69230877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202010820YA SG11202010820YA (en) | 2018-07-31 | 2019-07-25 | Sputtering target for magnetic recording medium |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210242000A1 (en) |
JP (1) | JPWO2020027235A1 (en) |
CN (1) | CN112106134B (en) |
SG (1) | SG11202010820YA (en) |
TW (1) | TWI702294B (en) |
WO (1) | WO2020027235A1 (en) |
Family Cites Families (45)
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US6440589B1 (en) * | 1999-06-02 | 2002-08-27 | International Business Machines Corporation | Magnetic media with ferromagnetic overlay materials for improved thermal stability |
US6428657B1 (en) * | 1999-08-04 | 2002-08-06 | International Business Machines Corporation | Magnetic read head sensor with a reactively sputtered pinning layer structure |
CN1620687A (en) * | 2002-03-29 | 2005-05-25 | 富士通株式会社 | Magnetic recording medium and magnctic memory |
JP3609393B2 (en) * | 2002-06-20 | 2005-01-12 | 日立マクセル株式会社 | Magnetic recording medium, method for manufacturing the same, and magnetic recording apparatus |
US7226674B2 (en) * | 2003-02-07 | 2007-06-05 | Hitachi Maxell, Ltd. | Magnetic recording medium, method for producing the same, and magnetic recording apparatus |
WO2005006310A1 (en) * | 2003-07-14 | 2005-01-20 | Kabushiki Kaisha Toshiba | Magnetic recording medium using grain isolation type film as under layer, method of manufacturing the same, and magnetic recording/reproducing apparatus using the same |
EP1788558B1 (en) * | 2004-06-30 | 2013-02-20 | Wd Media (Singapore) Pte. Ltd | Perpendicular magnetic recording disk and process for producing the same |
US20060286414A1 (en) * | 2005-06-15 | 2006-12-21 | Heraeus, Inc. | Enhanced oxide-containing sputter target alloy compositions |
CN1900352A (en) * | 2005-07-22 | 2007-01-24 | 黑罗伊斯公司 | Enhanced sputter target manufacturing method |
US20070037015A1 (en) * | 2005-08-10 | 2007-02-15 | Hitachi Global Storage Technologies Netherlands B.V. | Laminated magnetic media using Ta containing magnetic alloy as the upper magnetic layer |
US20080057350A1 (en) * | 2006-09-01 | 2008-03-06 | Heraeus, Inc. | Magnetic media and sputter targets with compositions of high anisotropy alloys and oxide compounds |
US20080131735A1 (en) * | 2006-12-05 | 2008-06-05 | Heraeus Incorporated | Ni-X, Ni-Y, and Ni-X-Y alloys with or without oxides as sputter targets for perpendicular magnetic recording |
KR100914931B1 (en) * | 2006-12-08 | 2009-08-31 | 삼성전자주식회사 | Magnetic recording medium and method of fabricating the same |
KR100846505B1 (en) * | 2006-12-15 | 2008-07-17 | 삼성전자주식회사 | Patterned magnetic recording media and method of manufacturing the same |
JP2008176858A (en) * | 2007-01-18 | 2008-07-31 | Hitachi Global Storage Technologies Netherlands Bv | Perpendicular magnetic recording medium and hard disk drive using the same |
US7588841B2 (en) * | 2007-04-17 | 2009-09-15 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording exchange-spring type medium with a lateral coupling layer for increasing intergranular exchange coupling in the lower magnetic layer |
WO2009028055A1 (en) * | 2007-08-29 | 2009-03-05 | Canon Anelva Corporation | Film deposition method and device by sputtering |
JP2009134804A (en) * | 2007-11-29 | 2009-06-18 | Fujitsu Ltd | Magnetic recording medium and method for manufacturing the same |
JP4292226B1 (en) * | 2007-12-20 | 2009-07-08 | 株式会社東芝 | Perpendicular magnetic recording medium and magnetic recording / reproducing apparatus using the same |
JP2011192319A (en) * | 2008-09-29 | 2011-09-29 | Hoya Corp | Perpendicular magnetic recording medium |
CN101429646B (en) * | 2008-12-12 | 2012-06-27 | 厦门大学 | Production method for film generating in-plane uniaxial magnetic anisotropy in non-inducement magnetic field |
US8460748B2 (en) * | 2009-08-13 | 2013-06-11 | Varian Seminconductor Equipment Associates, Inc. | Patterned magnetic bit data storage media and a method for manufacturing the same |
JP5413389B2 (en) * | 2010-08-02 | 2014-02-12 | 富士電機株式会社 | Perpendicular magnetic recording medium |
CN102087858B (en) * | 2010-11-26 | 2012-07-18 | 山西师范大学 | Gradient composite magnetic recording media and preparation method thereof |
KR102124557B1 (en) * | 2011-06-08 | 2020-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
SG193277A1 (en) * | 2011-08-23 | 2013-10-30 | Jx Nippon Mining & Metals Corp | Ferromagnetic sputtering target with minimized particle generation |
CN103930592B (en) * | 2011-12-22 | 2016-03-16 | 吉坤日矿日石金属株式会社 | Be dispersed with the Fe-Pt type sputtering target of C particle |
CN102517497A (en) * | 2011-12-26 | 2012-06-27 | 江阴品源新材料科技有限公司 | Alloy target material in vertical magnetic recording medium and preparation method for alloy target material |
CN104081458B (en) * | 2012-01-18 | 2017-05-03 | 吉坤日矿日石金属株式会社 | Co-cr-pt-based sputtering target and method for producing same |
WO2013136962A1 (en) * | 2012-03-15 | 2013-09-19 | Jx日鉱日石金属株式会社 | Magnetic material sputtering target and manufacturing method thereof |
JP5880686B2 (en) * | 2012-03-22 | 2016-03-09 | 富士電機株式会社 | Magnetic recording medium for thermally assisted magnetic recording |
WO2014087665A1 (en) * | 2012-12-06 | 2014-06-12 | 富士電機株式会社 | Perpendicular magnetic recording medium |
JP6265529B2 (en) * | 2013-01-23 | 2018-01-24 | 昭和電工株式会社 | Magnetic recording medium manufacturing method, magnetic recording medium, and magnetic recording / reproducing apparatus |
MY178171A (en) * | 2013-02-15 | 2020-10-06 | Jx Nippon Mining & Metals Corp | Sputtering target containing co or fe |
WO2014132746A1 (en) * | 2013-03-01 | 2014-09-04 | 田中貴金属工業株式会社 | Fept-c-based sputtering target and method for manufacturing same |
JP2015015062A (en) * | 2013-07-03 | 2015-01-22 | 富士電機株式会社 | Manufacturing method of magnetic recording medium |
US20160276143A1 (en) * | 2013-10-29 | 2016-09-22 | Tanaka Kikinzoku Kogyo K.K. | Target for magnetron sputtering |
US9689065B2 (en) * | 2014-01-03 | 2017-06-27 | Seagate Technology Llc | Magnetic stack including crystallized segregant induced columnar magnetic recording layer |
US20170137324A1 (en) * | 2014-06-26 | 2017-05-18 | Sumitomo Metal Mining Co., Ltd. | Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target |
WO2016047578A1 (en) * | 2014-09-26 | 2016-03-31 | Jx金属株式会社 | Sputtering target for magnetic recording film formation and production method therefor |
JP6284126B2 (en) * | 2014-12-15 | 2018-02-28 | 昭和電工株式会社 | Vertical recording medium, vertical recording / reproducing apparatus |
CN107112032B (en) * | 2015-07-02 | 2019-01-01 | 富士电机株式会社 | The manufacturing method of magnetic recording media and the magnetic recording media manufactured using the manufacturing method |
JP6504605B2 (en) * | 2015-11-27 | 2019-04-24 | 田中貴金属工業株式会社 | Sputtering target |
JP6692724B2 (en) * | 2016-09-02 | 2020-05-13 | Jx金属株式会社 | Non-magnetic material dispersed Fe-Pt based sputtering target |
TWI636149B (en) * | 2016-09-12 | 2018-09-21 | 日商Jx金屬股份有限公司 | Ferromagnetic sputtering target |
-
2019
- 2019-07-22 TW TW108125774A patent/TWI702294B/en not_active IP Right Cessation
- 2019-07-25 WO PCT/JP2019/030106 patent/WO2020027235A1/en active Application Filing
- 2019-07-25 US US17/050,718 patent/US20210242000A1/en not_active Abandoned
- 2019-07-25 JP JP2020534726A patent/JPWO2020027235A1/en active Pending
- 2019-07-25 CN CN201980030501.5A patent/CN112106134B/en active Active
- 2019-07-25 SG SG11202010820YA patent/SG11202010820YA/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2020027235A1 (en) | 2020-02-06 |
TWI702294B (en) | 2020-08-21 |
US20210242000A1 (en) | 2021-08-05 |
CN112106134B (en) | 2022-05-03 |
CN112106134A (en) | 2020-12-18 |
TW202012644A (en) | 2020-04-01 |
JPWO2020027235A1 (en) | 2021-08-12 |
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