SG11202009473XA - Substrate processing gas, storage container, and substrate processing method - Google Patents

Substrate processing gas, storage container, and substrate processing method

Info

Publication number
SG11202009473XA
SG11202009473XA SG11202009473XA SG11202009473XA SG11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA SG 11202009473X A SG11202009473X A SG 11202009473XA
Authority
SG
Singapore
Prior art keywords
substrate processing
storage container
processing method
processing gas
gas
Prior art date
Application number
SG11202009473XA
Other languages
English (en)
Inventor
Akifumi Yao
Yuuta TAKEDA
Jun Eto
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of SG11202009473XA publication Critical patent/SG11202009473XA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/24Inter-halogen compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
SG11202009473XA 2018-03-29 2019-03-05 Substrate processing gas, storage container, and substrate processing method SG11202009473XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018065433 2018-03-29
PCT/JP2019/008548 WO2019188030A1 (fr) 2018-03-29 2019-03-05 Gaz de traitement de substrat, récipient de stockage et procédé de traitement de substrat

Publications (1)

Publication Number Publication Date
SG11202009473XA true SG11202009473XA (en) 2020-10-29

Family

ID=68058815

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009473XA SG11202009473XA (en) 2018-03-29 2019-03-05 Substrate processing gas, storage container, and substrate processing method

Country Status (6)

Country Link
US (1) US11447697B2 (fr)
JP (1) JP7185148B2 (fr)
CN (1) CN111886674B (fr)
SG (1) SG11202009473XA (fr)
TW (1) TWI683791B (fr)
WO (1) WO2019188030A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116425118A (zh) * 2023-03-31 2023-07-14 南大光电(淄博)有限公司 裂解三氟化氮生产高纯氟气的方法及其裂解反应器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207570B1 (en) * 1999-08-20 2001-03-27 Lucent Technologies, Inc. Method of manufacturing integrated circuit devices
JP4369891B2 (ja) 2005-03-25 2009-11-25 独立行政法人 日本原子力研究開発機構 フッ素循環方式による七フッ化ヨウ素の製造方法
GB2464001B (en) * 2007-06-15 2012-04-18 Shell Int Research System for monitoring hydrocarbon extraction equipment
JP4693823B2 (ja) * 2007-06-18 2011-06-01 セントラル硝子株式会社 七フッ化ヨウ素の製造法
JP6056136B2 (ja) * 2011-09-07 2017-01-11 セントラル硝子株式会社 ドライエッチング方法
JP6032033B2 (ja) * 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法
JP6262333B2 (ja) * 2014-03-26 2018-01-17 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6210039B2 (ja) * 2014-09-24 2017-10-11 セントラル硝子株式会社 付着物の除去方法及びドライエッチング方法
JP6544215B2 (ja) * 2015-01-23 2019-07-17 セントラル硝子株式会社 ドライエッチング方法
US9728422B2 (en) 2015-01-23 2017-08-08 Central Glass Company, Limited Dry etching method
WO2016157317A1 (fr) * 2015-03-27 2016-10-06 株式会社日立国際電気 Dispositif de traitement de substrat, procédé de fabrication de dispositif à semi-conducteur, et support d'enregistrement
WO2017026001A1 (fr) * 2015-08-07 2017-02-16 株式会社日立国際電気 Procédé de fabrication de dispositif à semi-conducteur, appareil de traitement de substrat, et support d'enregistrement
JP6792158B2 (ja) * 2016-02-09 2020-11-25 セントラル硝子株式会社 フッ素化合物ガスの精製方法
TWI588297B (zh) * 2016-03-21 2017-06-21 Central Glass Co Ltd Attachment removal method and dry etching method
JP7053991B2 (ja) * 2017-03-28 2022-04-13 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法

Also Published As

Publication number Publication date
US20210054275A1 (en) 2021-02-25
US11447697B2 (en) 2022-09-20
JPWO2019188030A1 (ja) 2021-04-01
JP7185148B2 (ja) 2022-12-07
CN111886674A (zh) 2020-11-03
TW201942046A (zh) 2019-11-01
KR20200136944A (ko) 2020-12-08
CN111886674B (zh) 2024-03-12
TWI683791B (zh) 2020-02-01
WO2019188030A1 (fr) 2019-10-03

Similar Documents

Publication Publication Date Title
SG10201913418SA (en) Substrate processing method, substrate processing apparatus and a computer-readable storage medium
PL3752432T3 (pl) Pojemnik, zamknięcie i sposoby wytwarzania
NO20181530A1 (en) Unloading arrangement and unloading station, as well as method of unloading an item from a storage container
EP3266696A4 (fr) Bateau de transport de conteneurs-citernes de gnl et procédé de transport faisant appel à celui-ci
GB201701527D0 (en) Storage systems, methods and containers
EP3699166A4 (fr) Procédé de stockage d'hydrochlorofluorooléfine et récipient de stockage d'hydrochlorofluorooléfine
CA187273S (en) Storage and carrying case for pre-rolls
EP3282475A4 (fr) Procédé de maintien de substrat, dispositif de maintien de substrat, procédé de traitement et dispositif de traitement
EP3364541A4 (fr) Dispositif de commande de stockage, puce de traitement de données et procédé de traitement de données
EP3717395A4 (fr) Systèmes, appareil et procédés de transport de vaisseaux
IL244564A0 (en) Vacuum container, system and method
EP3368815A4 (fr) Dispositif de transport de gaz liquéfié et son procédé
EP3680930A4 (fr) Système de stockage et procédé de purge dans un système de stockage
PL3935308T3 (pl) Zbiornik transportowy i sposób wytworzenia takiego zbiornika
EP3312079A4 (fr) Navire porte-conteneurs et procédé de chargement/déchargement de conteneur
EP3546748A4 (fr) Élément et récipient revêtus de sorbeur non évaporatif, procédé de fabrication et appareil
GB2573356B (en) Stacking container, method and system
EP3786099A4 (fr) Système d'inspection de conteneur, installation de port et procédé d'inspection de conteneur
EP3438686B8 (fr) Dispositif de traitement d'informations, procédé de traitement d'informations et moyens de support stockant un programme de traitement d'informations
SG11202009473XA (en) Substrate processing gas, storage container, and substrate processing method
CA187274S (en) Storage and carrying case for pre-rolls
SG11201702837QA (en) Lng carrier vessel, and method for manufacturing such an lng carrier vessel
EP3232568A4 (fr) Procédé de fabrication d'un élément de couvercle à scellage hermétique, élément de couvercle à scellage hermétique, et procédé de fabrication d'un emballage de stockage de composants électroniques
EP3941799C0 (fr) Procédé pour le transport et le stockage d'objets
GB2581814B (en) Tessellatable container, system and method