SG11202009090XA - Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy - Google Patents
Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropyInfo
- Publication number
- SG11202009090XA SG11202009090XA SG11202009090XA SG11202009090XA SG11202009090XA SG 11202009090X A SG11202009090X A SG 11202009090XA SG 11202009090X A SG11202009090X A SG 11202009090XA SG 11202009090X A SG11202009090X A SG 11202009090XA SG 11202009090X A SG11202009090X A SG 11202009090XA
- Authority
- SG
- Singapore
- Prior art keywords
- tunnel junctions
- high perpendicular
- tunable high
- magnetic
- perpendicular magnetic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862650444P | 2018-03-30 | 2018-03-30 | |
| PCT/US2019/018457 WO2019190652A1 (en) | 2018-03-30 | 2019-02-19 | Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202009090XA true SG11202009090XA (en) | 2020-10-29 |
Family
ID=68057296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202009090XA SG11202009090XA (en) | 2018-03-30 | 2019-02-19 | Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US10636964B2 (ja) |
| EP (1) | EP3776679A4 (ja) |
| JP (3) | JP7100150B2 (ja) |
| KR (3) | KR20240132398A (ja) |
| CN (1) | CN111868946B (ja) |
| SG (1) | SG11202009090XA (ja) |
| TW (2) | TWI833736B (ja) |
| WO (1) | WO2019190652A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10636964B2 (en) * | 2018-03-30 | 2020-04-28 | Applied Materials, Inc. | Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy |
| US11502188B2 (en) | 2018-06-14 | 2022-11-15 | Intel Corporation | Apparatus and method for boosting signal in magnetoelectric spin orbit logic |
| US11476412B2 (en) | 2018-06-19 | 2022-10-18 | Intel Corporation | Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory |
| US11616192B2 (en) | 2018-06-29 | 2023-03-28 | Intel Corporation | Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication |
| US11522126B2 (en) * | 2019-10-14 | 2022-12-06 | Applied Materials, Inc. | Magnetic tunnel junctions with protection layers |
| CN116490051A (zh) * | 2022-01-14 | 2023-07-25 | 联华电子股份有限公司 | 磁性存储器元件及其制作方法 |
| WO2023173139A2 (en) * | 2022-03-11 | 2023-09-14 | Georgetown University | Boron-based and high-entropy magnetic materials |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003101100A (ja) * | 2001-09-21 | 2003-04-04 | Hitachi Ltd | 磁気抵抗効果型ヘッドおよび磁気記録再生装置 |
| US6773515B2 (en) * | 2002-01-16 | 2004-08-10 | Headway Technologies, Inc. | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures |
| US6841395B2 (en) | 2002-11-25 | 2005-01-11 | International Business Machines Corporation | Method of forming a barrier layer of a tunneling magnetoresistive sensor |
| US6974708B2 (en) * | 2004-04-08 | 2005-12-13 | Headway Technologies, Inc. | Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM |
| US7532442B2 (en) * | 2005-09-19 | 2009-05-12 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic material |
| JP4649457B2 (ja) * | 2007-09-26 | 2011-03-09 | 株式会社東芝 | 磁気抵抗素子及び磁気メモリ |
| US7579197B1 (en) * | 2008-03-04 | 2009-08-25 | Qualcomm Incorporated | Method of forming a magnetic tunnel junction structure |
| US8169753B2 (en) | 2008-11-21 | 2012-05-01 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers |
| US8609262B2 (en) * | 2009-07-17 | 2013-12-17 | Magic Technologies, Inc. | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application |
| US9396781B2 (en) | 2010-12-10 | 2016-07-19 | Avalanche Technology, Inc. | Magnetic random access memory having perpendicular composite reference layer |
| US9196332B2 (en) * | 2011-02-16 | 2015-11-24 | Avalanche Technology, Inc. | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer |
| US9153306B2 (en) * | 2011-11-08 | 2015-10-06 | Tohoku University | Tunnel magnetoresistive effect element and random access memory using same |
| US8823118B2 (en) | 2012-01-05 | 2014-09-02 | Headway Technologies, Inc. | Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer |
| US10553785B2 (en) | 2012-04-20 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetoresistive random access memory device and method of making same |
| CN103531707A (zh) * | 2012-07-03 | 2014-01-22 | 中国科学院物理研究所 | 磁性隧道结 |
| KR101446338B1 (ko) * | 2012-07-17 | 2014-10-01 | 삼성전자주식회사 | 자기 소자 및 그 제조 방법 |
| US20140037991A1 (en) | 2012-07-31 | 2014-02-06 | International Business Machines Corporation | Magnetic random access memory with synthetic antiferromagnetic storage layers |
| US9178136B2 (en) * | 2012-08-16 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetoresistive random access memory cell and fabricating the same |
| US9490054B2 (en) * | 2012-10-11 | 2016-11-08 | Headway Technologies, Inc. | Seed layer for multilayer magnetic materials |
| US9252710B2 (en) * | 2012-11-27 | 2016-02-02 | Headway Technologies, Inc. | Free layer with out-of-plane anisotropy for magnetic device applications |
| KR102199622B1 (ko) * | 2013-01-11 | 2021-01-08 | 삼성전자주식회사 | 용이 콘 이방성을 가지는 자기 터널 접합 소자들을 제공하는 방법 및 시스템 |
| TWI643367B (zh) * | 2013-02-27 | 2018-12-01 | 南韓商三星電子股份有限公司 | 形成磁性裝置的自由層的材料組成、自由層與磁性元件 |
| US9379315B2 (en) * | 2013-03-12 | 2016-06-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, semiconductor device structures, and memory systems |
| US9059389B2 (en) * | 2013-06-06 | 2015-06-16 | International Business Machines Corporation | Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density |
| JP2015088669A (ja) | 2013-10-31 | 2015-05-07 | 独立行政法人産業技術総合研究所 | 多値型磁気メモリ素子及び磁気メモリ装置 |
| US9601687B2 (en) * | 2014-02-12 | 2017-03-21 | Qualcomm Incorporated | Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction |
| SG10201501339QA (en) * | 2014-03-05 | 2015-10-29 | Agency Science Tech & Res | Magnetoelectric Device, Method For Forming A Magnetoelectric Device, And Writing Method For A Magnetoelectric Device |
| US9570671B2 (en) | 2014-03-12 | 2017-02-14 | Kabushiki Kaisha Toshiba | Magnetic memory device |
| US9337412B2 (en) | 2014-09-22 | 2016-05-10 | Spin Transfer Technologies, Inc. | Magnetic tunnel junction structure for MRAM device |
| US9647204B2 (en) | 2014-12-05 | 2017-05-09 | International Business Machines Corporation | Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer |
| US9337415B1 (en) | 2015-03-20 | 2016-05-10 | HGST Netherlands B.V. | Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy |
| US9537090B1 (en) * | 2015-06-25 | 2017-01-03 | International Business Machines Corporation | Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory |
| US11245069B2 (en) | 2015-07-14 | 2022-02-08 | Applied Materials, Inc. | Methods for forming structures with desired crystallinity for MRAM applications |
| JP2018032805A (ja) | 2016-08-26 | 2018-03-01 | ソニー株式会社 | 磁気抵抗素子及び電子デバイス |
| US10255935B2 (en) | 2017-07-21 | 2019-04-09 | Applied Materials, Inc. | Magnetic tunnel junctions suitable for high temperature thermal processing |
| US10636964B2 (en) * | 2018-03-30 | 2020-04-28 | Applied Materials, Inc. | Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy |
-
2019
- 2019-02-14 US US16/276,128 patent/US10636964B2/en active Active
- 2019-02-19 EP EP19775358.5A patent/EP3776679A4/en active Pending
- 2019-02-19 SG SG11202009090XA patent/SG11202009090XA/en unknown
- 2019-02-19 KR KR1020247028583A patent/KR20240132398A/ko active Application Filing
- 2019-02-19 WO PCT/US2019/018457 patent/WO2019190652A1/en active Application Filing
- 2019-02-19 CN CN201980020081.2A patent/CN111868946B/zh active Active
- 2019-02-19 KR KR1020237026614A patent/KR102700463B1/ko active IP Right Grant
- 2019-02-19 JP JP2020552211A patent/JP7100150B2/ja active Active
- 2019-02-19 KR KR1020207030362A patent/KR20200126006A/ko not_active IP Right Cessation
- 2019-03-05 TW TW108107166A patent/TWI833736B/zh active
- 2019-03-05 TW TW113103310A patent/TW202428173A/zh unknown
-
2020
- 2020-04-27 US US16/859,350 patent/US10998496B2/en active Active
-
2021
- 2021-05-04 US US17/307,783 patent/US20210320247A1/en active Pending
-
2022
- 2022-06-30 JP JP2022105377A patent/JP7442580B2/ja active Active
-
2024
- 2024-02-21 JP JP2024024751A patent/JP2024069248A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202428173A (zh) | 2024-07-01 |
| KR20240132398A (ko) | 2024-09-03 |
| US20200259078A1 (en) | 2020-08-13 |
| JP7442580B2 (ja) | 2024-03-04 |
| JP2021520061A (ja) | 2021-08-12 |
| US10998496B2 (en) | 2021-05-04 |
| EP3776679A4 (en) | 2022-01-05 |
| JP7100150B2 (ja) | 2022-07-12 |
| WO2019190652A1 (en) | 2019-10-03 |
| JP2022153384A (ja) | 2022-10-12 |
| US20190305217A1 (en) | 2019-10-03 |
| TWI833736B (zh) | 2024-03-01 |
| KR20230119264A (ko) | 2023-08-16 |
| TW201943108A (zh) | 2019-11-01 |
| US20210320247A1 (en) | 2021-10-14 |
| CN111868946B (zh) | 2024-08-13 |
| EP3776679A1 (en) | 2021-02-17 |
| CN111868946A (zh) | 2020-10-30 |
| US10636964B2 (en) | 2020-04-28 |
| KR102700463B1 (ko) | 2024-08-30 |
| JP2024069248A (ja) | 2024-05-21 |
| KR20200126006A (ko) | 2020-11-05 |
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