SG11202008005WA - Metrology and control of overlay and edge placement errors - Google Patents

Metrology and control of overlay and edge placement errors

Info

Publication number
SG11202008005WA
SG11202008005WA SG11202008005WA SG11202008005WA SG11202008005WA SG 11202008005W A SG11202008005W A SG 11202008005WA SG 11202008005W A SG11202008005W A SG 11202008005WA SG 11202008005W A SG11202008005W A SG 11202008005WA SG 11202008005W A SG11202008005W A SG 11202008005WA
Authority
SG
Singapore
Prior art keywords
metrology
overlay
control
edge placement
placement errors
Prior art date
Application number
SG11202008005WA
Other languages
English (en)
Inventor
Andrei V Shchegrov
Frank Laske
Nadav Gutman
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11202008005WA publication Critical patent/SG11202008005WA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
  • Paper (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG11202008005WA 2018-03-05 2019-03-04 Metrology and control of overlay and edge placement errors SG11202008005WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862638900P 2018-03-05 2018-03-05
US16/057,498 US10533848B2 (en) 2018-03-05 2018-08-07 Metrology and control of overlay and edge placement errors
PCT/US2019/020471 WO2019173171A1 (en) 2018-03-05 2019-03-04 Metrology and control of overlay and edge placement errors

Publications (1)

Publication Number Publication Date
SG11202008005WA true SG11202008005WA (en) 2020-09-29

Family

ID=67768073

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202008005WA SG11202008005WA (en) 2018-03-05 2019-03-04 Metrology and control of overlay and edge placement errors

Country Status (9)

Country Link
US (1) US10533848B2 (ko)
EP (1) EP3762780B1 (ko)
JP (1) JP7177846B2 (ko)
KR (1) KR102450009B1 (ko)
CN (1) CN111801625B (ko)
IL (1) IL276811B2 (ko)
SG (1) SG11202008005WA (ko)
TW (1) TWI781298B (ko)
WO (1) WO2019173171A1 (ko)

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US11353799B1 (en) 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
US11360397B2 (en) 2019-09-17 2022-06-14 Kla Corporation System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
EP3842866A1 (en) * 2019-12-24 2021-06-30 ASML Netherlands B.V. Metrology method
US11698251B2 (en) 2020-01-07 2023-07-11 Kla Corporation Methods and systems for overlay measurement based on soft X-ray Scatterometry
US11054753B1 (en) * 2020-04-20 2021-07-06 Applied Materials Israel Ltd. Overlay monitoring
US11353321B2 (en) 2020-06-12 2022-06-07 Kla Corporation Metrology system and method for measuring diagonal diffraction-based overlay targets
WO2022064033A1 (en) * 2020-09-28 2022-03-31 Asml Netherlands B.V. Target structure and associated methods and apparatus
TWI795798B (zh) * 2021-06-02 2023-03-11 東龍投資股份有限公司 對準誤差補償方法及其系統
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay
US11728192B2 (en) * 2021-07-22 2023-08-15 Globalfoundries U.S. Inc. Refining defect detection using process window
US11922619B2 (en) 2022-03-31 2024-03-05 Kla Corporation Context-based defect inspection
US20230314336A1 (en) 2022-03-31 2023-10-05 Kla Corporation Multi-mode optical inspection
WO2024052061A1 (en) * 2022-09-08 2024-03-14 Asml Netherlands B.V. Measuring contrast and critical dimension using an alignment sensor
US20240093985A1 (en) * 2022-09-16 2024-03-21 Kla Corporation System and method for acquiring alignment measurements of structures of a bonded sample
US20240119626A1 (en) * 2022-09-27 2024-04-11 Kla Corporation Image pre-processing for overlay metrology using decomposition techniques

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US5617340A (en) 1994-04-28 1997-04-01 The United States Of America As Represented By The Secretary Of Commerce Method and reference standards for measuring overlay in multilayer structures, and for calibrating imaging equipment as used in semiconductor manufacturing
US5757507A (en) * 1995-11-20 1998-05-26 International Business Machines Corporation Method of measuring bias and edge overlay error for sub-0.5 micron ground rules
US6484060B1 (en) 2000-03-24 2002-11-19 Micron Technology, Inc. Layout for measurement of overlay error
TW588414B (en) 2000-06-08 2004-05-21 Toshiba Corp Alignment method, overlap inspecting method and mask
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6982793B1 (en) 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US20070069398A1 (en) 2003-04-08 2007-03-29 Smith Nigel P Overlay metrology mark
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US7879515B2 (en) 2008-01-21 2011-02-01 International Business Machines Corporation Method to control semiconductor device overlay using post etch image metrology
CN103582819B (zh) * 2011-04-06 2016-09-14 科磊股份有限公司 用于提供经改进过程控制的质量度量的方法及系统
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US9390492B2 (en) 2013-03-14 2016-07-12 Kla-Tencor Corporation Method and system for reference-based overlay measurement
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WO2014194095A1 (en) * 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
US10152654B2 (en) * 2014-02-20 2018-12-11 Kla-Tencor Corporation Signal response metrology for image based overlay measurements
US10151986B2 (en) * 2014-07-07 2018-12-11 Kla-Tencor Corporation Signal response metrology based on measurements of proxy structures
CN106575630B (zh) * 2014-07-13 2021-05-25 科磊股份有限公司 使用叠加及成品率关键图案的度量
KR102512180B1 (ko) * 2015-04-28 2023-03-20 케이엘에이 코포레이션 계산 효율적인 x 선 기반의 오버레이 측정
US10018919B2 (en) * 2016-05-29 2018-07-10 Kla-Tencor Corporation System and method for fabricating metrology targets oriented with an angle rotated with respect to device features
WO2018004511A1 (en) 2016-06-27 2018-01-04 Kla-Tencor Corporation Apparatus and method for the measurement of pattern placement and size of pattern and computer program therefor
CN109643640B (zh) 2016-08-04 2021-02-12 科磊股份有限公司 在工艺中控制衬底上图案定位的方法及计算机程序产品
US10141156B2 (en) 2016-09-27 2018-11-27 Kla-Tencor Corporation Measurement of overlay and edge placement errors with an electron beam column array
KR102253565B1 (ko) 2017-10-22 2021-05-18 케이엘에이 코포레이션 이미징 오버레이 계측에서 오버레이 오정렬 오차 평가치의 이용

Also Published As

Publication number Publication date
CN111801625B (zh) 2021-10-08
IL276811A (en) 2020-10-29
CN111801625A (zh) 2020-10-20
EP3762780B1 (en) 2023-11-29
KR102450009B1 (ko) 2022-09-30
JP2021516366A (ja) 2021-07-01
JP7177846B2 (ja) 2022-11-24
TW201945857A (zh) 2019-12-01
US10533848B2 (en) 2020-01-14
KR20200118906A (ko) 2020-10-16
IL276811B2 (en) 2023-06-01
EP3762780A1 (en) 2021-01-13
TWI781298B (zh) 2022-10-21
WO2019173171A1 (en) 2019-09-12
EP3762780A4 (en) 2021-12-15
US20190271542A1 (en) 2019-09-05

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