SG11202004796PA - Silicon oxide silicon nitride stack stair step etch - Google Patents
Silicon oxide silicon nitride stack stair step etchInfo
- Publication number
- SG11202004796PA SG11202004796PA SG11202004796PA SG11202004796PA SG11202004796PA SG 11202004796P A SG11202004796P A SG 11202004796PA SG 11202004796P A SG11202004796P A SG 11202004796PA SG 11202004796P A SG11202004796P A SG 11202004796PA SG 11202004796P A SG11202004796P A SG 11202004796PA
- Authority
- SG
- Singapore
- Prior art keywords
- stair step
- step etch
- nitride stack
- silicon oxide
- silicon nitride
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762593082P | 2017-11-30 | 2017-11-30 | |
PCT/US2018/063141 WO2019108844A1 (en) | 2017-11-30 | 2018-11-29 | Silicon oxide silicon nitride stack stair step etch |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202004796PA true SG11202004796PA (en) | 2020-06-29 |
Family
ID=66665801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202004796PA SG11202004796PA (en) | 2017-11-30 | 2018-11-29 | Silicon oxide silicon nitride stack stair step etch |
Country Status (5)
Country | Link |
---|---|
US (1) | US11646207B2 (zh) |
KR (1) | KR20200084366A (zh) |
CN (1) | CN111418046A (zh) |
SG (1) | SG11202004796PA (zh) |
WO (1) | WO2019108844A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7426840B2 (ja) * | 2020-01-28 | 2024-02-02 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013030531A (ja) * | 2011-07-27 | 2013-02-07 | Central Glass Co Ltd | ドライエッチング剤 |
US8598040B2 (en) * | 2011-09-06 | 2013-12-03 | Lam Research Corporation | ETCH process for 3D flash structures |
JP2014036148A (ja) * | 2012-08-09 | 2014-02-24 | Tokyo Electron Ltd | 多層膜をエッチングする方法、及びプラズマ処理装置 |
US8980761B2 (en) | 2012-10-03 | 2015-03-17 | Applied Materials, Inc. | Directional SIO2 etch using low-temperature etchant deposition and plasma post-treatment |
KR20140130918A (ko) | 2013-05-02 | 2014-11-12 | 삼성전자주식회사 | 계단 구조를 형성하는 패터닝 방법 및 이를 이용한 반도체 소자의 제조방법 |
US9070447B2 (en) * | 2013-09-26 | 2015-06-30 | Macronix International Co., Ltd. | Contact structure and forming method |
SG11201605356PA (en) | 2013-12-30 | 2016-07-28 | Chemours Co Fc Llc | Chamber cleaning and semiconductor etching gases |
US9659788B2 (en) * | 2015-08-31 | 2017-05-23 | American Air Liquide, Inc. | Nitrogen-containing compounds for etching semiconductor structures |
US10861693B2 (en) * | 2015-12-18 | 2020-12-08 | Applied Materials, Inc. | Cleaning method |
-
2018
- 2018-11-29 CN CN201880077770.2A patent/CN111418046A/zh active Pending
- 2018-11-29 SG SG11202004796PA patent/SG11202004796PA/en unknown
- 2018-11-29 WO PCT/US2018/063141 patent/WO2019108844A1/en active Application Filing
- 2018-11-29 KR KR1020207018785A patent/KR20200084366A/ko not_active Application Discontinuation
- 2018-11-29 US US16/766,256 patent/US11646207B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN111418046A (zh) | 2020-07-14 |
WO2019108844A1 (en) | 2019-06-06 |
US11646207B2 (en) | 2023-05-09 |
US20210407811A1 (en) | 2021-12-30 |
KR20200084366A (ko) | 2020-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201601329UA (en) | Method for achieving ultra-high selectivity while etching silicon nitride | |
EP3347748A4 (en) | LOW-CONTRAST METASURFACES BASED ON SILICON NITRIDE | |
EP3331035A4 (en) | Group iii nitride semiconductor light-emitting element and manufacturing method therefor | |
SG11202103910PA (en) | Silicon nitride etching composition and method | |
SG10201510714XA (en) | Stripping compositions having high wn/w etching selectivity | |
EP3025368A4 (en) | Compositions and methods for cmp of silicon oxide, silicon nitride, and polysilicon materials | |
EP3253843A4 (en) | Cmp composition for silicon nitride removal | |
EP3293774A4 (en) | Nitride semiconductor ultraviolet light-emitting element | |
EP3381046A4 (en) | COMPOSITION AND METHOD FOR SELECTIVELY ATTACKING POLYSILICIUM WITH DOPING P IN RELATION TO SILICON NITRIDE | |
EP3760581A4 (en) | METHOD OF MANUFACTURING SILICON NITRIDE POWDER | |
EP3825723A4 (en) | SEMICONDUCTOR PHOTO-SENSING DEVICE | |
SG11202110021PA (en) | Silicon nitride etching liquid composition | |
EP3754732A4 (en) | NITRIDE SEMI-CONDUCTOR WITH UV LIGHT-EMITTING ELEMENT | |
EP3710391A4 (en) | STAIR LIFT DEVICE | |
IL283492A (en) | Burn preparations | |
EP3488461A4 (en) | SILICON CHALCOGENIDE PRECURSORS, METHOD FOR PRODUCING THE SILICON CHALCOGENIDE PRECARORS AND RELATED METHODS FOR PRODUCING SILICON NITRIDE AND SEMICONDUCTOR STRUCTURES | |
EP3442038A4 (en) | SEMICONDUCTOR WAFER | |
GB2576108B (en) | Semiconductor etching methods | |
HK1248922A1 (zh) | 在半導體上製造外部氧化物或外部氮化物 | |
EP3363040A4 (en) | LOCAL EXTINGUISHING OF SEMICONDUCTOR WAFERS | |
EP3216058A4 (en) | Triple stack semiconductor package | |
EP3546622A4 (en) | NITRIDE SEMICONDUCTOR SUBSTRATE, PROCESS FOR PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE | |
SG11201704225RA (en) | Semiconductor wafer comprising a monocrystalline group-iiia nitride layer | |
EP3706158A4 (en) | ETCHING PROCESS AND SEMICONDUCTOR MANUFACTURING PROCESS | |
EP3597797A4 (en) | GROUP III SEMICONDUCTOR NITRIDE SUBSTRATE |