SG11202002413UA - Systems and methods for device-correlated overlay metrology - Google Patents
Systems and methods for device-correlated overlay metrologyInfo
- Publication number
- SG11202002413UA SG11202002413UA SG11202002413UA SG11202002413UA SG11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA SG 11202002413U A SG11202002413U A SG 11202002413UA
- Authority
- SG
- Singapore
- Prior art keywords
- systems
- methods
- overlay metrology
- correlated overlay
- correlated
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electromagnetism (AREA)
- Polyamides (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762595987P | 2017-12-07 | 2017-12-07 | |
| US16/009,939 US10474040B2 (en) | 2017-12-07 | 2018-06-15 | Systems and methods for device-correlated overlay metrology |
| PCT/US2018/064145 WO2019113262A1 (en) | 2017-12-07 | 2018-12-06 | Systems and methods for device-correlated overlay metrology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202002413UA true SG11202002413UA (en) | 2020-06-29 |
Family
ID=66696697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202002413UA SG11202002413UA (en) | 2017-12-07 | 2018-12-06 | Systems and methods for device-correlated overlay metrology |
Country Status (8)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10964566B2 (en) * | 2018-06-29 | 2021-03-30 | Taiwan Semiconductor Manufacturing Go., Ltd. | Machine learning on overlay virtual metrology |
| US11073768B2 (en) | 2019-06-26 | 2021-07-27 | Kla Corporation | Metrology target for scanning metrology |
| US11914290B2 (en) | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
| US11221561B2 (en) * | 2020-01-14 | 2022-01-11 | Kla Corporation | System and method for wafer-by-wafer overlay feedforward and lot-to-lot feedback control |
| CN111458984A (zh) * | 2020-03-13 | 2020-07-28 | 华中科技大学 | 一种套刻标记及测量配置的分步优化方法 |
| KR102630496B1 (ko) | 2020-04-15 | 2024-01-29 | 케이엘에이 코포레이션 | 반도체 디바이스의 오정합을 측정하는 데 유용한 디바이스 스케일 피쳐를 갖는 오정합 타겟 |
| US11300405B2 (en) * | 2020-08-03 | 2022-04-12 | Kla Corporation | Grey-mode scanning scatterometry overlay metrology |
| US11556738B2 (en) * | 2020-10-01 | 2023-01-17 | Kla Corporation | System and method for determining target feature focus in image-based overlay metrology |
| US11460783B2 (en) * | 2021-01-07 | 2022-10-04 | Kla Corporation | System and method for focus control in extreme ultraviolet lithography systems using a focus-sensitive metrology target |
| US11703767B2 (en) | 2021-06-28 | 2023-07-18 | Kla Corporation | Overlay mark design for electron beam overlay |
| US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
| US11720031B2 (en) | 2021-06-28 | 2023-08-08 | Kla Corporation | Overlay design for electron beam and scatterometry overlay measurements |
| US12085385B2 (en) | 2021-10-06 | 2024-09-10 | Kla Corporation | Design-assisted large field of view metrology |
| EP4338009A4 (en) * | 2021-10-21 | 2025-06-04 | KLA Corporation | INDUCED SHIFTS FOR IMPROVED OVERHEATING ERROR METROLOGY |
| EP4202552B1 (en) * | 2021-12-24 | 2024-04-17 | Imec VZW | Method and structure for determining an overlay error |
| US12354970B2 (en) | 2022-04-08 | 2025-07-08 | Nanya Technology Corporation | Semiconductor device structure with overlay mark |
| TWI809931B (zh) * | 2022-04-08 | 2023-07-21 | 南亞科技股份有限公司 | 具有疊對標記之半導體元件結構的製備方法 |
| US12243832B2 (en) | 2022-04-08 | 2025-03-04 | Nanya Technology Corporation | Method for manufacturing semiconductor device structure with overlay marks |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW588414B (en) | 2000-06-08 | 2004-05-21 | Toshiba Corp | Alignment method, overlap inspecting method and mask |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US6432591B1 (en) * | 2000-08-30 | 2002-08-13 | Micron Technology, Inc. | Overlay target design method with pitch determination to minimize impact of lens aberrations |
| EP1314198B1 (en) * | 2000-08-30 | 2017-03-08 | KLA-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US6486954B1 (en) * | 2000-09-01 | 2002-11-26 | Kla-Tencor Technologies Corporation | Overlay alignment measurement mark |
| US20030002043A1 (en) | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US6949462B1 (en) * | 2002-04-04 | 2005-09-27 | Nanometrics Incorporated | Measuring an alignment target with multiple polarization states |
| US7148959B2 (en) * | 2002-11-01 | 2006-12-12 | Asml Netherlands B.V. | Test pattern, inspection method, and device manufacturing method |
| TW200509355A (en) | 2003-04-08 | 2005-03-01 | Aoti Operating Co Inc | Overlay metrology mark |
| DE10345466A1 (de) | 2003-09-30 | 2005-04-28 | Infineon Technologies Ag | Verfahren zur Erfassung von Plazierungsfehlern von Schaltungsmustern bei der Übertragung mittels einer Maske in Schichten eines Substrats eines Halbleiterwafers |
| US7308368B2 (en) * | 2004-09-15 | 2007-12-11 | Asml Netherlands B.V. | Method and apparatus for vibration detection, method and apparatus for vibration analysis, lithographic apparatus, device manufacturing method, and computer program |
| DE102005046973B4 (de) * | 2005-09-30 | 2014-01-30 | Globalfoundries Inc. | Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers |
| WO2007040855A1 (en) | 2005-09-30 | 2007-04-12 | Advanced Micro Devices, Inc. | Structure and method for simultaneously determining an overlay accuracy and pattern placement error |
| US8181327B2 (en) | 2008-02-08 | 2012-05-22 | Zephyros, Inc | Mechanical method for improving bond joint strength |
| US8214317B2 (en) | 2009-08-17 | 2012-07-03 | Pratt & Whitney Rocketdyne, Inc. | Failure detection system risk reduction assessment |
| US9052709B2 (en) * | 2010-07-30 | 2015-06-09 | Kla-Tencor Corporation | Method and system for providing process tool correctables |
| EP2694983B1 (en) | 2011-04-06 | 2020-06-03 | KLA-Tencor Corporation | Method and system for providing a quality metric for improved process control |
| US9097978B2 (en) | 2012-02-03 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus to characterize photolithography lens quality |
| US9188876B2 (en) * | 2012-02-07 | 2015-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of determining overlay error and control system for dynamic control of reticle position |
| US8860941B2 (en) * | 2012-04-27 | 2014-10-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tool induced shift reduction determination for overlay metrology |
| US9201312B2 (en) | 2013-04-16 | 2015-12-01 | Kla-Tencor Corporation | Method for correcting position measurements for optical errors and method for determining mask writer errors |
| US9214317B2 (en) | 2013-06-04 | 2015-12-15 | Kla-Tencor Corporation | System and method of SEM overlay metrology |
| TWI544288B (zh) * | 2014-04-14 | 2016-08-01 | 台灣積體電路製造股份有限公司 | 疊對度量方法 |
| WO2016124393A1 (en) * | 2015-02-04 | 2016-08-11 | Asml Netherlands B.V. | Metrology method and apparatus, computer program and lithographic system |
| CN106325001B (zh) * | 2015-07-10 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 套刻精度补偿方法及装置 |
| EP3171396A1 (en) | 2015-11-18 | 2017-05-24 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby |
| JP6843160B2 (ja) | 2016-06-27 | 2021-03-17 | ケーエルエー コーポレイション | パターン配置及びパターンサイズ計測装置及び方法、並びにそのためのコンピュータプログラム |
-
2018
- 2018-06-15 US US16/009,939 patent/US10474040B2/en active Active
- 2018-12-04 TW TW107143359A patent/TWI781259B/zh active
- 2018-12-06 SG SG11202002413UA patent/SG11202002413UA/en unknown
- 2018-12-06 WO PCT/US2018/064145 patent/WO2019113262A1/en active IP Right Grant
- 2018-12-06 KR KR1020207019440A patent/KR102435141B1/ko active Active
- 2018-12-06 JP JP2020531119A patent/JP7118152B2/ja active Active
- 2018-12-06 EP EP18886399.7A patent/EP3721294B1/en active Active
- 2018-12-06 CN CN201880077786.3A patent/CN111433676B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3721294B1 (en) | 2025-05-28 |
| CN111433676A (zh) | 2020-07-17 |
| KR20200086748A (ko) | 2020-07-17 |
| KR102435141B1 (ko) | 2022-08-22 |
| US20190179231A1 (en) | 2019-06-13 |
| CN111433676B (zh) | 2022-08-05 |
| TW201935148A (zh) | 2019-09-01 |
| EP3721294A4 (en) | 2021-09-01 |
| JP7118152B2 (ja) | 2022-08-15 |
| TWI781259B (zh) | 2022-10-21 |
| US10474040B2 (en) | 2019-11-12 |
| EP3721294A1 (en) | 2020-10-14 |
| JP2021505959A (ja) | 2021-02-18 |
| WO2019113262A1 (en) | 2019-06-13 |
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