SG11201913862WA - Reflective photomask blank and reflective photomask - Google Patents

Reflective photomask blank and reflective photomask

Info

Publication number
SG11201913862WA
SG11201913862WA SG11201913862WA SG11201913862WA SG11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA
Authority
SG
Singapore
Prior art keywords
reflective photomask
blank
reflective
photomask blank
photomask
Prior art date
Application number
SG11201913862WA
Other languages
English (en)
Inventor
Toru Komizo
Norihito Fukugami
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Publication of SG11201913862WA publication Critical patent/SG11201913862WA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52Reflectors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/58Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
SG11201913862WA 2017-07-05 2018-06-29 Reflective photomask blank and reflective photomask SG11201913862WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017132027 2017-07-05
PCT/JP2018/024890 WO2019009212A1 (ja) 2017-07-05 2018-06-29 反射型フォトマスクブランク及び反射型フォトマスク

Publications (1)

Publication Number Publication Date
SG11201913862WA true SG11201913862WA (en) 2020-01-30

Family

ID=64950999

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201913862WA SG11201913862WA (en) 2017-07-05 2018-06-29 Reflective photomask blank and reflective photomask

Country Status (8)

Country Link
US (1) US11067886B2 (de)
EP (1) EP3650935A4 (de)
JP (2) JP7169970B2 (de)
KR (1) KR102632988B1 (de)
CN (1) CN110785704A (de)
SG (1) SG11201913862WA (de)
TW (1) TWI770217B (de)
WO (1) WO2019009212A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6919699B2 (ja) * 2019-11-28 2021-08-18 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP2021179549A (ja) * 2020-05-14 2021-11-18 凸版印刷株式会社 反射型マスクブランク及び反射型マスク
WO2024029409A1 (ja) * 2022-08-03 2024-02-08 Agc株式会社 反射型マスクブランク及び反射型マスク

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060121218A (ko) * 2003-12-22 2006-11-28 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 프로그램 가능 리소그래픽 마스크와, 무 마스크 광학리소그래피 시스템과, 광학 리소그래픽 단계 수행 방법과,기판 라벨링 방법 및 장치 마스킹 방법
JP5194888B2 (ja) * 2007-09-27 2013-05-08 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク及びその製造方法並びに半導体素子の製造方法
JP5332741B2 (ja) * 2008-09-25 2013-11-06 凸版印刷株式会社 反射型フォトマスク
US8962220B2 (en) * 2009-04-02 2015-02-24 Toppan Printing Co., Ltd. Reflective photomask and reflective photomask blank
EP2453464A1 (de) 2009-07-08 2012-05-16 Asahi Glass Company, Limited Reflexionsmaskenrohling für die euv-lithographie
JP5418293B2 (ja) 2010-02-25 2014-02-19 凸版印刷株式会社 反射型フォトマスクおよび反射型フォトマスクブランクならびにその製造方法
EP2583138B1 (de) * 2010-06-15 2020-01-22 Carl Zeiss SMT GmbH Maske für euv-lithografie, euv-lithografiesystem und verfahren zur optimierung der bildgebung einer maske
KR102127907B1 (ko) * 2013-09-27 2020-06-29 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
US9529250B2 (en) 2014-10-31 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask with ITO absorber to suppress out of band radiation
JP6888258B2 (ja) * 2016-09-15 2021-06-16 凸版印刷株式会社 反射型フォトマスク及び反射型フォトマスクブランク
JP6915280B2 (ja) 2017-01-23 2021-08-04 凸版印刷株式会社 反射型フォトマスク及び反射型フォトマスクブランク

Also Published As

Publication number Publication date
EP3650935A1 (de) 2020-05-13
TW201907223A (zh) 2019-02-16
KR20200019629A (ko) 2020-02-24
CN110785704A (zh) 2020-02-11
TWI770217B (zh) 2022-07-11
WO2019009212A1 (ja) 2019-01-10
EP3650935A4 (de) 2020-08-05
US11067886B2 (en) 2021-07-20
JP7279131B2 (ja) 2023-05-22
JP7169970B2 (ja) 2022-11-11
JP2022003417A (ja) 2022-01-11
US20200218143A1 (en) 2020-07-09
KR102632988B1 (ko) 2024-02-01
JPWO2019009212A1 (ja) 2020-05-07

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