SG11201906278WA - Overlay control with non-zero offset prediction - Google Patents

Overlay control with non-zero offset prediction

Info

Publication number
SG11201906278WA
SG11201906278WA SG11201906278WA SG11201906278WA SG11201906278WA SG 11201906278W A SG11201906278W A SG 11201906278WA SG 11201906278W A SG11201906278W A SG 11201906278WA SG 11201906278W A SG11201906278W A SG 11201906278WA SG 11201906278W A SG11201906278W A SG 11201906278WA
Authority
SG
Singapore
Prior art keywords
international
data
adi
zero offset
california
Prior art date
Application number
SG11201906278WA
Other languages
English (en)
Inventor
Michael A Adel
Amnon Manassen
William Pierson
Ady Levy
Pradeep Subrahmanyan
Liran Yerushalmi
Dongsub Choi
Hoyoung Heo
Dror Alumot
John Robinson
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201906278WA publication Critical patent/SG11201906278WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Financial Or Insurance-Related Operations Such As Payment And Settlement (AREA)
  • Length Measuring Devices By Optical Means (AREA)
SG11201906278WA 2017-01-25 2018-01-24 Overlay control with non-zero offset prediction SG11201906278WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762450454P 2017-01-25 2017-01-25
US15/867,485 US10409171B2 (en) 2017-01-25 2018-01-10 Overlay control with non-zero offset prediction
PCT/US2018/015104 WO2018140534A1 (fr) 2017-01-25 2018-01-24 Commande du recouvrement avec prédiction des décalages non nuls

Publications (1)

Publication Number Publication Date
SG11201906278WA true SG11201906278WA (en) 2019-08-27

Family

ID=62978709

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201906278WA SG11201906278WA (en) 2017-01-25 2018-01-24 Overlay control with non-zero offset prediction

Country Status (8)

Country Link
US (1) US10409171B2 (fr)
EP (1) EP3548971B1 (fr)
JP (1) JP6864752B2 (fr)
KR (1) KR102274473B1 (fr)
CN (1) CN110312967B (fr)
SG (1) SG11201906278WA (fr)
TW (1) TWI729261B (fr)
WO (1) WO2018140534A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11268910B2 (en) * 2017-07-07 2022-03-08 Koh Young Technology Inc. Apparatus for optimizing inspection of exterior of target object and method thereof
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske
US11302544B2 (en) 2019-03-28 2022-04-12 Kla-Tencor Corporation Method for measuring and correcting misregistration between layers in a semiconductor device, and misregistration targets useful therein
EP3994526A1 (fr) * 2019-07-03 2022-05-11 ASML Netherlands B.V. Procédé d'application de modèle de dépôt dans un processus de fabrication de semi-conducteurs
US20220291590A1 (en) * 2019-08-13 2022-09-15 Asml Netherlands B.V. Modeling method for computational fingerprints
WO2021032398A1 (fr) * 2019-08-22 2021-02-25 Asml Netherlands B.V. Procédé de commande d'un appareil lithographique
US10809633B1 (en) 2019-09-05 2020-10-20 Globalfoundries Inc. Overlay control with corrections for lens aberrations
US11360398B2 (en) * 2019-11-14 2022-06-14 Kla Corporation System and method for tilt calculation based on overlay metrology measurements
US20220026798A1 (en) * 2020-05-06 2022-01-27 Kla Corporation Inter-step feedforward process control in the manufacture of semiconductor devices
EP4030236A1 (fr) * 2021-01-18 2022-07-20 ASML Netherlands B.V. Procédé de surveillance d'un processus lithographique et appareils associés
KR20230121053A (ko) * 2020-12-21 2023-08-17 에이에스엠엘 네델란즈 비.브이. 리소그래피 공정을 모니터링하는 방법
WO2023198381A1 (fr) * 2022-04-14 2023-10-19 Asml Netherlands B.V. Procédés de métrologie et dispositifs associés

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW434676B (en) * 1999-11-25 2001-05-16 Taiwan Semiconductor Mfg Method for measuring overlay error and determining overlay process window
US6737208B1 (en) 2001-12-17 2004-05-18 Advanced Micro Devices, Inc. Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information
JP4570164B2 (ja) 2005-09-15 2010-10-27 東京エレクトロン株式会社 基板処理装置、基板処理方法、基板処理プログラム、及びそのプログラムを記録したコンピュータ読み取り可能な記録媒体
US7873585B2 (en) * 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
NL1036245A1 (nl) * 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
US9140998B2 (en) * 2010-11-12 2015-09-22 Asml Netherlands B.V. Metrology method and inspection apparatus, lithographic system and device manufacturing method
JP6108684B2 (ja) * 2011-06-08 2017-04-05 エフ・イ−・アイ・カンパニー 局所領域ナビゲーション用の高精度ビーム配置
CN103186053A (zh) * 2011-12-30 2013-07-03 无锡华润上华科技有限公司 一种光刻条件控制方法
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
NL2013249A (en) * 2013-08-20 2015-02-23 Asml Netherlands Bv Lithography system and a machine learning controller for such a lithography system.
US9087793B2 (en) 2013-12-11 2015-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching target layer of semiconductor device in etching apparatus
US9087176B1 (en) * 2014-03-06 2015-07-21 Kla-Tencor Corporation Statistical overlay error prediction for feed forward and feedback correction of overlay errors, root cause analysis and process control
CN104934338A (zh) 2014-03-18 2015-09-23 上海华虹宏力半导体制造有限公司 套刻工艺控制方法
US9784690B2 (en) * 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
EP2980646B1 (fr) 2014-07-30 2020-09-02 GenISys GmbH Compensation de la perturbation de processus lors du transfert d'un tracé de masque sur un substrat de masque
CN105527794B (zh) * 2014-09-28 2018-05-01 上海微电子装备（集团）股份有限公司 套刻误差测量装置及方法
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system

Also Published As

Publication number Publication date
JP6864752B2 (ja) 2021-04-28
US10409171B2 (en) 2019-09-10
KR20190103448A (ko) 2019-09-04
TW201841071A (zh) 2018-11-16
CN110312967B (zh) 2021-10-08
US20180253017A1 (en) 2018-09-06
EP3548971A4 (fr) 2020-08-12
WO2018140534A1 (fr) 2018-08-02
EP3548971B1 (fr) 2021-12-22
EP3548971A1 (fr) 2019-10-09
JP2020505647A (ja) 2020-02-20
CN110312967A (zh) 2019-10-08
TWI729261B (zh) 2021-06-01
KR102274473B1 (ko) 2021-07-07

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