SG11201903378XA - Selective etch rate monitor - Google Patents

Selective etch rate monitor

Info

Publication number
SG11201903378XA
SG11201903378XA SG11201903378XA SG11201903378XA SG11201903378XA SG 11201903378X A SG11201903378X A SG 11201903378XA SG 11201903378X A SG11201903378X A SG 11201903378XA SG 11201903378X A SG11201903378X A SG 11201903378XA SG 11201903378X A SG11201903378X A SG 11201903378XA
Authority
SG
Singapore
Prior art keywords
international
etch rate
california
pct
formed over
Prior art date
Application number
SG11201903378XA
Inventor
Philip Allan Kraus
Timothy J Franklin
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201903378XA publication Critical patent/SG11201903378XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H13/00—Measuring resonant frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

c o ee (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 17 May 2018 (17.05.2018) WIPO I PCT Iiiimmommionotiolooluoinoloinnom oimIE (10) International Publication Number WO 2018/089175 Al (51) International Patent Classification: HO1L 21/67 (2006.01) H01L 21/3065 (2006.01) (21) International Application Number: PCT/US2017/056786 (22) International Filing Date: 16 October 2017 (16.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/351,437 14 November 2016 (14.11.2016) US (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (72) Inventors: KRAUS, Philip Allan; 1006 Broadway Av- enue, San Jose, California 95125 (US). FRANKLIN, Tim- othy J.; 671 Regas Drive, Campbell, California 95008 (US). (74) Agent: BERNADICOU, Michael A. et al.; Schwabe, Williamson & Wyatt, P.C., 1211 SW 5th, Ste 1900, Port- land, Oregon 97204 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: SELECTIVE ETCH RATE MONITOR 124 (57) : Embodiments include areal time etch rate sensor and meth- ods of for using areal time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The 11 0 resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first elec- trode is not covered by the sacrificial layer. In an embodiment, the conduc- tive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial 122 layer. —105 108 FIG. 1 e go e ® ge ®c re 0 c g ® o ® go o ceco cc cocce 10001:101:101:10001:11:10000000Q0C c0 D e °e 0 ® 0 9 0 e 0 0 c 0 0 0 0 0 e e0 De e o e 0 0 o e ®®e 0 9 0 e g g \"--126 124 _0 c- - 0 c oo e eo 0 00 0 00 e e OG 0 0 0 0 GO- — 126
SG11201903378XA 2016-11-14 2017-10-16 Selective etch rate monitor SG11201903378XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/351,437 US9978621B1 (en) 2016-11-14 2016-11-14 Selective etch rate monitor
PCT/US2017/056786 WO2018089175A1 (en) 2016-11-14 2017-10-16 Selective etch rate monitor

Publications (1)

Publication Number Publication Date
SG11201903378XA true SG11201903378XA (en) 2019-05-30

Family

ID=62106702

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201903378XA SG11201903378XA (en) 2016-11-14 2017-10-16 Selective etch rate monitor

Country Status (8)

Country Link
US (3) US9978621B1 (en)
EP (1) EP3539151A4 (en)
JP (2) JP6849801B2 (en)
KR (2) KR102316547B1 (en)
CN (2) CN117198929A (en)
SG (1) SG11201903378XA (en)
TW (2) TWI772206B (en)
WO (1) WO2018089175A1 (en)

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US20220165541A1 (en) * 2020-11-24 2022-05-26 Applied Materials, Inc. Etch feedback for control of upstream process
CN112885733B (en) * 2021-03-12 2023-09-05 中南大学 System for monitoring etched silicon dioxide by using high-frequency electrodeless quartz crystal sensor
KR102557583B1 (en) 2021-04-21 2023-07-21 (주)위즈바이오솔루션 Oxide film etch rate monitoring apparatus and monitoring method thereof
US12130606B2 (en) * 2021-12-22 2024-10-29 Applied Materials, Inc. Disturbance compensation for substrate processing recipes
US11864299B2 (en) 2022-05-10 2024-01-02 Applied Materials, Inc. System and method for dissipating workpiece charge build up

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Also Published As

Publication number Publication date
EP3539151A1 (en) 2019-09-18
WO2018089175A1 (en) 2018-05-17
TWI772206B (en) 2022-07-21
US11257698B2 (en) 2022-02-22
KR20210130249A (en) 2021-10-29
US20200381280A1 (en) 2020-12-03
US20180240692A1 (en) 2018-08-23
TW202211323A (en) 2022-03-16
CN109937471B (en) 2023-08-22
CN117198929A (en) 2023-12-08
KR20190069616A (en) 2019-06-19
TWI746694B (en) 2021-11-21
CN109937471A (en) 2019-06-25
US10790175B2 (en) 2020-09-29
KR102316547B1 (en) 2021-10-22
US20180138061A1 (en) 2018-05-17
US9978621B1 (en) 2018-05-22
EP3539151A4 (en) 2020-06-03
JP7170765B2 (en) 2022-11-14
JP2021106272A (en) 2021-07-26
KR102460411B1 (en) 2022-10-31
TW201830516A (en) 2018-08-16
JP6849801B2 (en) 2021-03-31
JP2019536281A (en) 2019-12-12

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