JPS6355535U - - Google Patents
Info
- Publication number
- JPS6355535U JPS6355535U JP14932786U JP14932786U JPS6355535U JP S6355535 U JPS6355535 U JP S6355535U JP 14932786 U JP14932786 U JP 14932786U JP 14932786 U JP14932786 U JP 14932786U JP S6355535 U JPS6355535 U JP S6355535U
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- sample
- film
- crystal oscillator
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Description
第1図は、この考案の一実施例に係るイオンビ
ームエツチング装置の要部を示す概略図である。
4……試料、8……エツチング層、12……イ
オンビーム、22……水晶発振子、24……膜、
26……測定装置。
FIG. 1 is a schematic diagram showing the main parts of an ion beam etching apparatus according to an embodiment of this invention. 4... Sample, 8... Etching layer, 12... Ion beam, 22... Crystal oscillator, 24... Film,
26...Measuring device.
Claims (1)
装置において、試料のエツチングされる領域と同
一物質から成る膜を表面に有していて当該膜に前
記イオンビームの一部が照射される所に配置され
た水晶発振子と、当該水晶発振子の発振周波数の
変化を測定する測定装置とを備えることを特徴と
するイオンビームエツチング装置。 In an apparatus for etching a sample by irradiating it with an ion beam, the device has a film on its surface made of the same material as the region to be etched of the sample, and is placed in a place where the film is partially irradiated with the ion beam. An ion beam etching apparatus comprising a crystal oscillator and a measuring device for measuring changes in the oscillation frequency of the crystal oscillator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14932786U JPS6355535U (en) | 1986-09-29 | 1986-09-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14932786U JPS6355535U (en) | 1986-09-29 | 1986-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6355535U true JPS6355535U (en) | 1988-04-14 |
Family
ID=31064428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14932786U Pending JPS6355535U (en) | 1986-09-29 | 1986-09-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6355535U (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006344745A (en) * | 2005-06-08 | 2006-12-21 | Tdk Corp | Device for measuring quantity of etching, etching device and method for measuring quantity of etching |
JP2019510374A (en) * | 2016-03-11 | 2019-04-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Wafer processing tool with microsensor |
CN109937471A (en) * | 2016-11-14 | 2019-06-25 | 应用材料公司 | Selective etch rate monitor |
WO2022157908A1 (en) * | 2021-01-22 | 2022-07-28 | 株式会社日立ハイテク | Ion milling device |
-
1986
- 1986-09-29 JP JP14932786U patent/JPS6355535U/ja active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006344745A (en) * | 2005-06-08 | 2006-12-21 | Tdk Corp | Device for measuring quantity of etching, etching device and method for measuring quantity of etching |
JP2019510374A (en) * | 2016-03-11 | 2019-04-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Wafer processing tool with microsensor |
JP2022020718A (en) * | 2016-03-11 | 2022-02-01 | アプライド マテリアルズ インコーポレイテッド | Wafer processing tool with micro sensor |
CN109937471A (en) * | 2016-11-14 | 2019-06-25 | 应用材料公司 | Selective etch rate monitor |
JP2019536281A (en) * | 2016-11-14 | 2019-12-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Selective etch rate monitor |
JP2021106272A (en) * | 2016-11-14 | 2021-07-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Selective etch rate monitor |
CN109937471B (en) * | 2016-11-14 | 2023-08-22 | 应用材料公司 | Selective Etch Rate Monitor |
WO2022157908A1 (en) * | 2021-01-22 | 2022-07-28 | 株式会社日立ハイテク | Ion milling device |
TWI821868B (en) * | 2021-01-22 | 2023-11-11 | 日商日立全球先端科技股份有限公司 | Ion milling device |
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