JPS63183264U - - Google Patents
Info
- Publication number
- JPS63183264U JPS63183264U JP7240887U JP7240887U JPS63183264U JP S63183264 U JPS63183264 U JP S63183264U JP 7240887 U JP7240887 U JP 7240887U JP 7240887 U JP7240887 U JP 7240887U JP S63183264 U JPS63183264 U JP S63183264U
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- utility
- model registration
- oscillation type
- thickness sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims 2
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の一実施例の膜厚センサークリ
スタルの側面図である。
１……水晶クリスタル、２……金薄膜、３……
アルミニウム薄膜。
FIG. 1 is a side view of a film thickness sensor crystal according to an embodiment of the present invention. 1...Quartz crystal, 2...Gold thin film, 3...
Aluminum thin film.
Claims (1)
成したことを特徴とする水晶発振式膜厚センサー
クリスタル。 (2) 実用新案登録請求の範囲第１項記載の膜厚
センサークリスタルにおいて、アルミニウム薄膜
の膜厚が０．３〜０．７μｍの範囲であることを
特徴とする水晶発振式膜厚センサークリスタル。[Claims for Utility Model Registration] (1) A crystal oscillation type film thickness sensor crystal characterized by forming a thin aluminum film on a crystal surface. (2) Utility Model Registration A crystal oscillation type film thickness sensor crystal according to claim 1, characterized in that the aluminum thin film has a thickness in the range of 0.3 to 0.7 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7240887U JPS63183264U (en) | 1987-05-15 | 1987-05-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7240887U JPS63183264U (en) | 1987-05-15 | 1987-05-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63183264U true JPS63183264U (en) | 1988-11-25 |
Family
ID=30915829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7240887U Pending JPS63183264U (en) | 1987-05-15 | 1987-05-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63183264U (en) |
-
1987
- 1987-05-15 JP JP7240887U patent/JPS63183264U/ja active Pending