SG11201900762QA - Use of an electric field for detaching a piezoelectric layer from a donor substrate - Google Patents

Use of an electric field for detaching a piezoelectric layer from a donor substrate

Info

Publication number
SG11201900762QA
SG11201900762QA SG11201900762QA SG11201900762QA SG11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA
Authority
SG
Singapore
Prior art keywords
international
donor substrate
piezoelectric layer
electric field
detaching
Prior art date
Application number
SG11201900762QA
Other languages
English (en)
Inventor
Cédric Charles-Alfred
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201900762QA publication Critical patent/SG11201900762QA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/53274—Means to disassemble electrical device

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Reciprocating Pumps (AREA)
  • Physical Vapour Deposition (AREA)
SG11201900762QA 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate SG11201900762QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1657494A FR3054930B1 (fr) 2016-08-02 2016-08-02 Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
PCT/EP2017/069470 WO2018024743A1 (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate

Publications (1)

Publication Number Publication Date
SG11201900762QA true SG11201900762QA (en) 2019-02-27

Family

ID=57960500

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900762QA SG11201900762QA (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate

Country Status (8)

Country Link
US (2) US11744154B2 (enrdf_load_stackoverflow)
EP (2) EP3494604B1 (enrdf_load_stackoverflow)
JP (1) JP6773274B2 (enrdf_load_stackoverflow)
KR (1) KR102200791B1 (enrdf_load_stackoverflow)
CN (1) CN109564967B (enrdf_load_stackoverflow)
FR (1) FR3054930B1 (enrdf_load_stackoverflow)
SG (1) SG11201900762QA (enrdf_load_stackoverflow)
WO (1) WO2018024743A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3054930B1 (fr) 2016-08-02 2018-07-13 Soitec Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
CN111834519B (zh) * 2020-06-29 2021-12-03 中国科学院上海微系统与信息技术研究所 一种提高单晶压电薄膜厚度均匀性的方法
FR3125383B1 (fr) * 2021-07-19 2025-02-21 Soitec Silicon On Insulator Procédé d'implantation d'espèces atomiques dans un substrat piézoélectrique

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737178A (en) 1997-03-06 1998-04-07 Applied Materials, Inc. Monocrystalline ceramic coating having integral bonding interconnects for electrostatic chucks
AU8675798A (en) 1997-07-29 1999-02-22 Silicon Genesis Corporation Cluster tool method and apparatus using plasma immersion ion implantation
JP2001035907A (ja) * 1999-07-26 2001-02-09 Ulvac Japan Ltd 吸着装置
TWI290342B (en) 2003-11-18 2007-11-21 United Soi Corp A method to fabricate a thin film on a substrate
CN100342486C (zh) 2003-12-24 2007-10-10 联合晶圆公司 一种在基板上转移制作薄膜的方法
WO2007013571A1 (en) * 2005-07-29 2007-02-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
FR2914492A1 (fr) * 2007-03-27 2008-10-03 Soitec Silicon On Insulator Procede de fabrication de structures avec couches ferroelectriques reportees.
KR101148587B1 (ko) 2007-12-25 2012-05-23 가부시키가이샤 무라타 세이사쿠쇼 복합 압전 기판의 제조 방법
CN101620983B (zh) 2008-06-20 2011-05-25 李天锡 薄膜制造方法
JP4821834B2 (ja) * 2008-10-31 2011-11-24 株式会社村田製作所 圧電性複合基板の製造方法
JP5359615B2 (ja) * 2009-07-02 2013-12-04 株式会社村田製作所 複合基板の製造方法
FR2995136B1 (fr) 2012-09-04 2015-06-26 Soitec Silicon On Insulator Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
WO2014129433A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、半導体デバイス及び半導体デバイスの製法
US9659764B2 (en) 2013-08-29 2017-05-23 The Board Of Trustees Of The Leland Stanford Junior University Method of controlled crack propagation for material cleavage using electromagnetic forces
KR101664090B1 (ko) 2014-12-08 2016-10-10 (주)다인스 진공 라미네이터 및 이를 이용한 라미네이팅 방법
FR3054930B1 (fr) 2016-08-02 2018-07-13 Soitec Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur

Also Published As

Publication number Publication date
EP3731288B1 (en) 2022-10-05
CN109564967A (zh) 2019-04-02
EP3494604B1 (en) 2020-06-17
KR20190030747A (ko) 2019-03-22
CN109564967B (zh) 2022-12-02
US20230363279A1 (en) 2023-11-09
US20210376225A1 (en) 2021-12-02
WO2018024743A1 (en) 2018-02-08
JP2019527937A (ja) 2019-10-03
KR102200791B1 (ko) 2021-01-12
US11744154B2 (en) 2023-08-29
EP3731288A1 (en) 2020-10-28
JP6773274B2 (ja) 2020-10-21
EP3494604A1 (en) 2019-06-12
FR3054930A1 (enrdf_load_stackoverflow) 2018-02-09
FR3054930B1 (fr) 2018-07-13

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