SG11201900646PA - Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor - Google Patents
Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductorInfo
- Publication number
- SG11201900646PA SG11201900646PA SG11201900646PA SG11201900646PA SG11201900646PA SG 11201900646P A SG11201900646P A SG 11201900646PA SG 11201900646P A SG11201900646P A SG 11201900646PA SG 11201900646P A SG11201900646P A SG 11201900646PA SG 11201900646P A SG11201900646P A SG 11201900646PA
- Authority
- SG
- Singapore
- Prior art keywords
- palladium
- international
- nitride semiconductor
- activated surface
- directly depositing
- Prior art date
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title abstract 13
- 229910052763 palladium Inorganic materials 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000151 deposition Methods 0.000 title abstract 4
- 229910002601 GaN Inorganic materials 0.000 title abstract 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910000979 O alloy Inorganic materials 0.000 abstract 1
- 229910001252 Pd alloy Inorganic materials 0.000 abstract 1
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP16185352 | 2016-08-23 | ||
| PCT/EP2017/071003 WO2018036951A1 (fr) | 2016-08-23 | 2017-08-21 | Procédé de dépôt direct de palladium sur une surface non activée d'un semi-conducteur au nitrure de gallium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201900646PA true SG11201900646PA (en) | 2019-03-28 |
Family
ID=56787384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201900646PA SG11201900646PA (en) | 2016-08-23 | 2017-08-21 | Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10920322B2 (fr) |
| EP (1) | EP3504355A1 (fr) |
| JP (1) | JP6743289B2 (fr) |
| KR (1) | KR102274349B1 (fr) |
| CN (1) | CN109642322B (fr) |
| MY (1) | MY193073A (fr) |
| SG (1) | SG11201900646PA (fr) |
| TW (1) | TWI724225B (fr) |
| WO (1) | WO2018036951A1 (fr) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4424241A (en) | 1982-09-27 | 1984-01-03 | Bell Telephone Laboratories, Incorporated | Electroless palladium process |
| TW552678B (en) * | 2001-05-29 | 2003-09-11 | Sharp Kk | Semiconductor apparatus and process for producing the same, and process for making via hole |
| JP3896044B2 (ja) * | 2002-07-11 | 2007-03-22 | シャープ株式会社 | 窒化物系半導体発光素子の製造方法およびその製品 |
| JP2004103975A (ja) | 2002-09-12 | 2004-04-02 | Citizen Watch Co Ltd | 光半導体素子の製造方法と光半導体素子およびその光半導体素子を実装した光半導体装置 |
| US7348612B2 (en) * | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
| EP2177646B1 (fr) * | 2008-10-17 | 2011-03-23 | ATOTECH Deutschland GmbH | multicouche de Ni-P/Pd à contrainte réduite pour revêtement de surfaces de connections electriques sur wafers |
| TWI504780B (zh) * | 2009-09-04 | 2015-10-21 | Win Semiconductors Corp | 一種利用無電解電鍍法將金屬種子層鍍在半導體晶片的背面及導孔的製程方法 |
| CN102169930B (zh) * | 2011-03-07 | 2012-09-19 | 山东大学 | 一种金属纳米颗粒辅助实现发光二极管表面粗化的方法 |
| US8911551B2 (en) * | 2011-08-02 | 2014-12-16 | Win Semiconductor Corp. | Electroless plating apparatus and method |
| CN104769733B (zh) * | 2012-07-24 | 2017-08-08 | 株式会社Lg化学 | 用于改进发光器件的光提取效率的方法以及用于制造发光器件的方法 |
| EP2740818B1 (fr) | 2012-12-05 | 2016-03-30 | ATOTECH Deutschland GmbH | Procédé de fabrication de surfaces pouvant être collées et soudées sur des électrodes en métal noble |
| TWI680207B (zh) * | 2014-12-17 | 2019-12-21 | 德商德國艾托特克公司 | 鈀之電鍍浴組合物及無電電鍍方法 |
-
2017
- 2017-08-21 US US16/320,123 patent/US10920322B2/en active Active
- 2017-08-21 JP JP2019510919A patent/JP6743289B2/ja active Active
- 2017-08-21 KR KR1020197008049A patent/KR102274349B1/ko active IP Right Grant
- 2017-08-21 EP EP17755493.8A patent/EP3504355A1/fr active Pending
- 2017-08-21 CN CN201780050966.8A patent/CN109642322B/zh active Active
- 2017-08-21 SG SG11201900646PA patent/SG11201900646PA/en unknown
- 2017-08-21 WO PCT/EP2017/071003 patent/WO2018036951A1/fr unknown
- 2017-08-21 MY MYPI2019000650A patent/MY193073A/en unknown
- 2017-08-22 TW TW106128347A patent/TWI724225B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6743289B2 (ja) | 2020-08-19 |
| KR20190040285A (ko) | 2019-04-17 |
| MY193073A (en) | 2022-09-26 |
| KR102274349B1 (ko) | 2021-07-07 |
| WO2018036951A1 (fr) | 2018-03-01 |
| CN109642322A (zh) | 2019-04-16 |
| EP3504355A1 (fr) | 2019-07-03 |
| US10920322B2 (en) | 2021-02-16 |
| CN109642322B (zh) | 2022-03-01 |
| TWI724225B (zh) | 2021-04-11 |
| TW201816184A (zh) | 2018-05-01 |
| JP2019532177A (ja) | 2019-11-07 |
| US20190242017A1 (en) | 2019-08-08 |
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