SG11201900646PA - Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor - Google Patents
Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductorInfo
- Publication number
- SG11201900646PA SG11201900646PA SG11201900646PA SG11201900646PA SG11201900646PA SG 11201900646P A SG11201900646P A SG 11201900646PA SG 11201900646P A SG11201900646P A SG 11201900646PA SG 11201900646P A SG11201900646P A SG 11201900646PA SG 11201900646P A SG11201900646P A SG 11201900646PA
- Authority
- SG
- Singapore
- Prior art keywords
- palladium
- international
- nitride semiconductor
- activated surface
- directly depositing
- Prior art date
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title abstract 13
- 229910052763 palladium Inorganic materials 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000151 deposition Methods 0.000 title abstract 4
- 229910002601 GaN Inorganic materials 0.000 title abstract 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910000979 O alloy Inorganic materials 0.000 abstract 1
- 229910001252 Pd alloy Inorganic materials 0.000 abstract 1
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 01 March 2018 (01.03.2018) W I PO I PCT Hu omits I 10 0 01111 DOI OHM OHME 011 (10) International Publication Number WO 2018/036951 Al (51) International Patent Classification: C23C 18/16 (2006.01) H01L 33/00 (2010.01) C23C 18/44 (2006.01) HO1L 33/32 (2010.01) HO1L 29/872 (2006.01) (21) International Application Number: PCT/EP2017/071003 (22) International Filing Date: 21 August 2017 (21.08.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16185352.8 23 August 2016 (23.08.2016) EP (71) Applicant: ATOTECH DEUTSCHLAND GMBH [DE/DE]; ErasmusstraBe 20, 10553 Berlin (DE). (72) Inventor: WALTER, Andreas; c/o Atotech Deutsch- land GmbH, Patent Management, ErasmusstraBe 20, 10553 Berlin (DE). (74) Agent: SCHULZ, Hendrik; Atotech Deutschland GmbH, Patent Management, ErasmusstraBe 20, 10553 Berlin (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) 11 M (54) Title: METHOD FOR DIRECTLY DEPOSITING PALLADIUM ONTO A NON-ACTIVATED SURFACE OF A GALLIUM 0 NITRIDE SEMICONDUCTOR (57) : The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium 0 nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a N palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium 0 alloy coated, doped or non-doped gallium nitride semiconductor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP16185352 | 2016-08-23 | ||
| PCT/EP2017/071003 WO2018036951A1 (en) | 2016-08-23 | 2017-08-21 | Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201900646PA true SG11201900646PA (en) | 2019-03-28 |
Family
ID=56787384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201900646PA SG11201900646PA (en) | 2016-08-23 | 2017-08-21 | Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10920322B2 (en) |
| EP (1) | EP3504355A1 (en) |
| JP (1) | JP6743289B2 (en) |
| KR (1) | KR102274349B1 (en) |
| CN (1) | CN109642322B (en) |
| MY (1) | MY193073A (en) |
| SG (1) | SG11201900646PA (en) |
| TW (1) | TWI724225B (en) |
| WO (1) | WO2018036951A1 (en) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4424241A (en) | 1982-09-27 | 1984-01-03 | Bell Telephone Laboratories, Incorporated | Electroless palladium process |
| TW552678B (en) * | 2001-05-29 | 2003-09-11 | Sharp Kk | Semiconductor apparatus and process for producing the same, and process for making via hole |
| JP3896044B2 (en) * | 2002-07-11 | 2007-03-22 | シャープ株式会社 | Nitride-based semiconductor light-emitting device manufacturing method and product |
| JP2004103975A (en) | 2002-09-12 | 2004-04-02 | Citizen Watch Co Ltd | Optical semiconductor element, method for manufacturing the same, and optical semiconductor device mounting optical semiconductor element |
| US7348612B2 (en) * | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
| ATE503037T1 (en) * | 2008-10-17 | 2011-04-15 | Atotech Deutschland Gmbh | STRESS-REDUCED NI-P/PD STACKS FOR WAFER SURFACE |
| TWI504780B (en) * | 2009-09-04 | 2015-10-21 | Win Semiconductors Corp | A method of using an electroless plating for depositing a metal seed layer on semiconductor chips for the backside and via-hole manufacturing processes |
| CN102169930B (en) | 2011-03-07 | 2012-09-19 | 山东大学 | Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles |
| US8911551B2 (en) * | 2011-08-02 | 2014-12-16 | Win Semiconductor Corp. | Electroless plating apparatus and method |
| CN104769733B (en) * | 2012-07-24 | 2017-08-08 | 株式会社Lg化学 | Method for the method for the light extraction efficiency that improves luminescent device and for manufacturing luminescent device |
| EP2740818B1 (en) * | 2012-12-05 | 2016-03-30 | ATOTECH Deutschland GmbH | Method for manufacture of wire bondable and solderable surfaces on noble metal electrodes |
| WO2016097084A1 (en) * | 2014-12-17 | 2016-06-23 | Atotech Deutschland Gmbh | Plating bath composition and method for electroless plating of palladium |
-
2017
- 2017-08-21 EP EP17755493.8A patent/EP3504355A1/en active Pending
- 2017-08-21 MY MYPI2019000650A patent/MY193073A/en unknown
- 2017-08-21 SG SG11201900646PA patent/SG11201900646PA/en unknown
- 2017-08-21 WO PCT/EP2017/071003 patent/WO2018036951A1/en unknown
- 2017-08-21 CN CN201780050966.8A patent/CN109642322B/en active Active
- 2017-08-21 US US16/320,123 patent/US10920322B2/en active Active
- 2017-08-21 JP JP2019510919A patent/JP6743289B2/en active Active
- 2017-08-21 KR KR1020197008049A patent/KR102274349B1/en active IP Right Grant
- 2017-08-22 TW TW106128347A patent/TWI724225B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102274349B1 (en) | 2021-07-07 |
| JP2019532177A (en) | 2019-11-07 |
| MY193073A (en) | 2022-09-26 |
| TWI724225B (en) | 2021-04-11 |
| JP6743289B2 (en) | 2020-08-19 |
| CN109642322B (en) | 2022-03-01 |
| TW201816184A (en) | 2018-05-01 |
| US20190242017A1 (en) | 2019-08-08 |
| CN109642322A (en) | 2019-04-16 |
| KR20190040285A (en) | 2019-04-17 |
| US10920322B2 (en) | 2021-02-16 |
| EP3504355A1 (en) | 2019-07-03 |
| WO2018036951A1 (en) | 2018-03-01 |
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