SG11201900139RA - Thermally optimized rings - Google Patents

Thermally optimized rings

Info

Publication number
SG11201900139RA
SG11201900139RA SG11201900139RA SG11201900139RA SG11201900139RA SG 11201900139R A SG11201900139R A SG 11201900139RA SG 11201900139R A SG11201900139R A SG 11201900139RA SG 11201900139R A SG11201900139R A SG 11201900139RA SG 11201900139R A SG11201900139R A SG 11201900139RA
Authority
SG
Singapore
Prior art keywords
international
annular body
pct
hollow inner
inner cavities
Prior art date
Application number
SG11201900139RA
Inventor
Gangadhar Sheelavant
Cariappa Achappa Baduvamanda
Bopanna Ichettira Vasantha
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201900139RA publication Critical patent/SG11201900139RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices Affording Protection Of Roads Or Walls For Sound Insulation (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property MD HIM 0 11101 010 11111 01 II 0 0111E011H 010 IRMO 11110 ill 011 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\"\"1 WO 2018/031200 Al 15 February 2018 (15.02.2018) WIP0 I PCT (51) International Patent Classification: (74) Agent: PATTERSON, B. Todd et al.; Patterson & Sheri- HOM 37/32 (2006.01) C23C 14/34 (2006.01) dan, L.L.P., 24 Greenway Plaza, Suite 1600, Houston, C23C 14/56 (2006.01) Texas 77046 (US). (21) International Application Number: (81) Designated States (unless otherwise indicated, for every PCT/US2017/042493 kind of national protection available): AE, AG, AL, AM, (22) International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, 18 July 2017 (18.07.2017) CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, (25) Filing Language: English HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, (26) Publication Language: English KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, (30) Priority Data: OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, 15/233,613 10 August 2016 (10.08.2016) US SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (72) Inventors: SHEELAVANT, Gangadhar; 1353A, Ward GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, No. 3, Sheelavant Street, Guledgudd 587203 (IN). BADU- UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, VAMANDA, Cariappa Achappa; #103, Sunshine Apart-TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, ments, East End D Main Road, 9th Block, Jayanagar, Ban- EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, galore 560069 (IN). VASANTHA, Bopanna Ichettira; MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = #15, 3rd Cross, 4th Block, Kumara Park West, Bangalore — TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, 560020 (IN). KM, ML, MR, NE, SN, TD, TG). = (54) Title: THERMALLY OPTIMIZED RINGS (57) : A process kit ring for use in a plasma processing system = loo 134 \ --, 131 is disclosed herein. The process kit ring includes an annular body and one \ or more hollow inner cavities. The annular body is formed from a plasma 110 The body has an outer diameter I resistant material. annular greater than = \\\\\\\\\\\\\ 200 mm. The annular body includes a top surface and a bottom surface. — 136 ---\".- = ' The top is to face a plasma processing region of a — — = _ _ = —, 4., \ = 132 --- le ) 128 154 112 / --150 156 101 126 Ti — ' \ ---104 surface configured process chamber. The bottom surface is opposite the top surface. The bottom surface is substantially perpendicular to a centerline of the body. 106 The bottom surface is supported at least partially by a pedestal assembly. The one or more hollow inner cavities are formed in the annular body about the centerline. The one or more hollow inner cavities are arranged = , 130 — = IS -- r - 71 \ in a circle within the annular body. — 2 10 = 152 ' ;r . '\" 180 . 1'\"A : i / *k X Vc-ri 122 kr r ,' — 11 71 20 124 111 114 118 . \ 116 W8 144 X /1 / / / / 142 © t. © ei 140 GO ,-1 M O_ FIG. 1 1-1 0 ei O [Continued on next page] WO 2018/031200 Al MIDEDIMOMMIDEFIEHEIDEMIDIONIMOVOIS Published: — with international search report (Art. 21(3))
SG11201900139RA 2016-08-10 2017-07-18 Thermally optimized rings SG11201900139RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/233,613 US10435784B2 (en) 2016-08-10 2016-08-10 Thermally optimized rings
PCT/US2017/042493 WO2018031200A1 (en) 2016-08-10 2017-07-18 Thermally optimized rings

Publications (1)

Publication Number Publication Date
SG11201900139RA true SG11201900139RA (en) 2019-02-27

Family

ID=61160139

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900139RA SG11201900139RA (en) 2016-08-10 2017-07-18 Thermally optimized rings

Country Status (6)

Country Link
US (2) US10435784B2 (en)
KR (1) KR102157819B1 (en)
CN (1) CN109478491B (en)
SG (1) SG11201900139RA (en)
TW (1) TWI746601B (en)
WO (1) WO2018031200A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020090164A1 (en) * 2018-10-30 2020-05-07 株式会社アルバック Vacuum treatment device
US20210035851A1 (en) * 2019-07-30 2021-02-04 Applied Materials, Inc. Low contact area substrate support for etching chamber
USD931240S1 (en) 2019-07-30 2021-09-21 Applied Materials, Inc. Substrate support pedestal

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US6206976B1 (en) * 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
US20050048876A1 (en) 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
US20060138925A1 (en) 2004-12-28 2006-06-29 Yi-Fang Cheng Plasma processing device having a ring-shaped air chamber for heat dissipation
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7355192B2 (en) 2006-03-30 2008-04-08 Intel Corporation Adjustable suspension assembly for a collimating lattice
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
JP5350043B2 (en) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP5601794B2 (en) * 2009-05-29 2014-10-08 株式会社東芝 Plasma etching equipment
CN108359957A (en) * 2010-10-29 2018-08-03 应用材料公司 Deposition ring and electrostatic chuck for physical vapor deposition chamber
US9682398B2 (en) * 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9863648B2 (en) * 2013-02-21 2018-01-09 Benjamin J. Weinraub Equipment protector with buoyant rim
KR102234454B1 (en) 2013-04-08 2021-04-01 외를리콘 서피스 솔루션즈 아게, 페피콘 Sputtering target having increased power compatibility
US9293304B2 (en) 2013-12-17 2016-03-22 Applied Materials, Inc. Plasma thermal shield for heat dissipation in plasma chamber
US20160155657A1 (en) * 2014-12-02 2016-06-02 Applied Materials, Inc. Surface profile modifications for extended life of consumable parts in semiconductor processing equipment
CN107112275B (en) 2014-12-19 2020-10-30 应用材料公司 Edge ring for substrate processing chamber
WO2017099919A1 (en) * 2015-12-07 2017-06-15 Applied Materials, Inc. Amalgamated cover ring

Also Published As

Publication number Publication date
US20190301007A1 (en) 2019-10-03
TW201829816A (en) 2018-08-16
KR20190025050A (en) 2019-03-08
US20180044783A1 (en) 2018-02-15
TWI746601B (en) 2021-11-21
CN109478491B (en) 2021-02-09
CN109478491A (en) 2019-03-15
US10435784B2 (en) 2019-10-08
KR102157819B1 (en) 2020-09-18
WO2018031200A1 (en) 2018-02-15

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