US20190301007A1 - Thermally optimized rings - Google Patents
Thermally optimized rings Download PDFInfo
- Publication number
- US20190301007A1 US20190301007A1 US16/446,188 US201916446188A US2019301007A1 US 20190301007 A1 US20190301007 A1 US 20190301007A1 US 201916446188 A US201916446188 A US 201916446188A US 2019301007 A1 US2019301007 A1 US 2019301007A1
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- United States
- Prior art keywords
- annular body
- process kit
- cavity
- ring
- kit ring
- Prior art date
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- Abandoned
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Definitions
- Embodiments described herein generally relate to a processing chamber, and more specifically, to component rings of a processing chamber.
- PVD Physical vapor deposition
- inert gas having relatively heavy atoms (e.g., argon) or a gas mixture comprising such inert gas. Bombardment of the target by ions of the inert gas results in ejection of atoms of the target material. The ejected atoms accumulate as a deposited film on a substrate placed on a substrate support disposed in the chamber.
- a process kit may be disposed in the chamber to help define a processing region in a desired region within the chamber with respect to the substrate.
- the process kit may include at least a cover ring and a deposition ring.
- the deposition ring may be configured to prevent deposition on the perimeter of the substrate support pedestal.
- the cover ring may be configured to create a gap between the deposition ring to prevent deposition below the substrate.
- the deposition ring and the cover ring may be heated to high temperatures. The high temperature results in thermal expansion of the deposition ring and the cover ring, which, over time, decreases the life of the deposition ring and the cover ring.
- a process kit ring for use in a plasma processing system includes an annular body and one or more hollow inner cavities.
- the annular body is formed from a plasma resistant material.
- the annular body has an outer diameter greater than 200 mm.
- the annular body includes a top surface and a bottom surface.
- the top surface is configured to face a plasma processing region of a process chamber.
- the bottom surface is opposite the top surface.
- the bottom surface is substantially perpendicular to a centerline of the body.
- the bottom surface is supported at least partially by a pedestal assembly.
- the one or more hollow inner cavities are formed in the annular body about the centerline.
- the one or more hollow inner cavities are arranged in a circle within the annular body.
- a process kit for a substrate processing chamber includes a first process kit ring and a second process kit ring.
- the first process kit includes a first body and one or more first hollow inner cavities.
- the first body is formed from a plasma resistant material.
- the first body has a first outer diameter greater than 200 mm.
- the first body includes a first top surface and a first bottom surface.
- the first top surface faces a plasma processing region of a process chamber.
- the first top surface is configured to at least partially support a second process kit ring.
- the first bottom surface is opposite the first top surface.
- the first bottom surface is substantially perpendicular to a first centerline of the first body and supported at least partially by a pedestal assembly.
- the second process kit ring at least partially covers the first process kit ring.
- the second process kit ring includes a second body and one or more second hollow inner cavities.
- the second body is formed from a second plasma resistant material.
- the second body includes a second outer diameter greater than 200 mm.
- the second body includes a second top surface and a second bottom surface.
- the second top surface faces the plasma processing region of the processing chamber.
- the second bottom surface is opposite the second top surface.
- the second bottom surface is substantially parallel to a second centerline of the second process kit ring.
- the second bottom surface is configured to at least partially cover the first process kit ring.
- the one or more second hollow inner cavities are formed in the second body about the centerline.
- the one or more second hollow inner cavities are arranged in a circle within the second body.
- FIG. 1 illustrates an exemplary semiconductor processing chamber, according to one embodiment.
- FIG. 2A is a cross-sectional view illustrating the cover ring of FIG. 1 , according to one embodiment.
- FIG. 2B is a cross-sectional view illustrating the cover ring of FIG. 1 , according to another embodiment.
- FIG. 3 illustrates a top cross-sectional view of the cover ring of FIG. 2 , according to one embodiment.
- FIG. 4 illustrates a top view cross-sectional view of the cover ring of FIG. 1 , according to one embodiment.
- FIG. 5A is a cross-sectional view illustrating the deposition ring of FIG. 1 , according to one embodiment.
- FIG. 5B is a cross-sectional view illustrating the deposition ring of FIG. 1 , according to another embodiment.
- FIG. 6 illustrates a top cross-sectional view of the deposition ring of FIG. 5 , according to one embodiment.
- FIG. 7 illustrates a top view cross-sectional view of the deposition ring of FIG. 1 , according to one embodiment.
- FIG. 1 illustrates an exemplary semiconductor processing chamber 100 , according to one embodiment.
- the processing chamber 100 is a physical vapor deposition (PVD) chamber, capable of depositing metal or ceramic materials, such as for example, titanium, aluminum oxide, aluminum, copper, tantalum, tantalum nitride, tantalum carbide, tungsten, tungsten nitride, lanthanum, lanthanum oxides, titanium nitride, nickel, and NiPt, among others.
- PVD physical vapor deposition
- metal or ceramic materials such as for example, titanium, aluminum oxide, aluminum, copper, tantalum, tantalum nitride, tantalum carbide, tungsten, tungsten nitride, lanthanum, lanthanum oxides, titanium nitride, nickel, and NiPt, among others.
- ALPS® Plus and SIP ENCORE® PVD processing chambers commercially available from Applied Materials, Inc. of Santa Clara, Calif. It is contemplated
- the processing chamber 100 includes a chamber body 102 having upper adapters 104 , lower adapters 106 , a bottom 108 , and a lid assembly 110 that encloses an interior volume 112 .
- the chamber bottom 106 generally includes a slit valve (not shown) to provide entry and egress of a substrate 101 from the processing chamber 100 .
- the semiconductor processing chamber 100 includes a pedestal assembly 114 and a process kit 150 .
- the pedestal assembly 114 may be supported from the bottom 108 of the chamber 100 .
- the process kit 150 includes at least a deposition ring 152 supported on the pedestal assembly 114 .
- the process kit 150 may also include one or both of a ground shield 154 and an interleaving cover ring 156 .
- the pedestal assembly 114 is coupled to the bottom 106 of the chamber 100 by a lift mechanism 116 that is configured to move the pedestal assembly 114 between an upper and lower position. In the lower position, lift pins (not shown) are moved through the pedestal assembly 114 to space the substrate from the pedestal assembly 114 to facilitate exchange of the substrate with a substrate transfer mechanism disposed exterior to the processing chamber.
- a bellows 118 may be disposed between the pedestal assembly 114 and the bottom 108 to isolate the interior volume 112 of the chamber body 102 from the interior of the pedestal assembly 114 and the exterior of the chamber 100 .
- the pedestal assembly 114 generally includes a substrate support 120 sealingly coupled to a base plate 122 , which is coupled to a ground plate 124 .
- the substrate support 120 may be comprised of aluminum or ceramic.
- the substrate support 120 may be an electrostatic chuck, a ceramic body, a heater, or a combination thereof.
- the dielectric body may be fabricated from a high thermal conductivity dielectric material, such as pyrolytic boron nitride, aluminum nitride, silicon nitride, or the like.
- the substrate support 120 has a substrate receiving surface 126 that receives and supports the substrate 101 during processing.
- the substrate receiving surface 126 has a plane substantially parallel to a sputtering surface 128 of the target 132 .
- the process kit 150 comprises various components that can be easily removed from the chamber 100 , for example, to clean sputtering deposits off the component surfaces, replace or repair eroded components, or to adapt the chamber 100 for other processes.
- the process kit 150 includes at least one or more of the deposition ring 152 , the ground shield 154 and the cover ring 156 .
- the cover ring 156 and deposition ring 152 are placed about a peripheral edge 130 of the substrate support 120 .
- the deposition ring 152 and cover ring 156 are discussed in more detail in FIGS. 2-7 .
- the deposition ring 152 and cover ring 156 may be formed from a 3D printing, lithography, or casting process, which allows one or more hollow inner cavities to be formed in the bodies of the deposition ring 152 and cover ring 156 . This results in an increased surface area (including internal surfaces) for the deposition ring 152 and cover ring 156 , which advantageously results in up to a 30% decrease in thermal expansion when the deposition ring 152 and cover ring 156 are heated.
- the lid assembly 110 generally includes a target backing plate 131 , a target 132 , and a magnetron 134 .
- the target backing plate 131 is supported by the upper adapters 104 when in a closed position.
- a ceramic ring seal 136 may be disposed between the target backing plate 131 and upper adapters 104 to prevent vacuum leakage therebetween.
- the target 132 is coupled to the target backing plate 131 and exposed to the interior volume 112 of the processing chamber 100 .
- the target 132 provides material which is deposited on the substrate 101 during a PVD process.
- the process chamber 100 is coupled to a power source 140 and a gas source 142 .
- a gas such as argon
- the gas source 142 may comprise a non-reactive gas such as argon or xenon, which is capable of energetically impinging upon and sputtering material from the target 132 .
- the gas source 142 may also include a reactive gas.
- a plasma is formed between the substrate 101 and the target 132 , defined as the plasma processing region 180 . Ions within the plasma are accelerated toward the target 132 and cause material to become dislodged from the target 132 . The dislodged target material is deposited on the substrate 101 .
- FIGS. 2A and 2B are a cross-sectional view illustrating the cover ring 156 , according to one embodiment.
- the cover ring 156 includes an annular body 200 .
- the annular body 200 is formed from a plasma resistant material.
- the annular body 200 is formed from stainless steel.
- the annular body 200 may be formed through a three-dimensional (3D) printing or other suitable process.
- the annular body 200 includes a top surface 202 and a bottom surface 204 .
- the top surface 202 faces the plasma processing region of the process chamber 100 .
- the top surface 202 may include a three-dimensionally printed surface texture.
- the bottom surface 204 is perpendicular to a centerline 210 of the body 200 .
- the bottom surface 204 is substantially flat.
- the bottom surface 204 is configured to at least partially cover the deposition ring 152 .
- the cover ring 156 further comprises one or more hollow inner cavities 206 and one or more vent holes 208 .
- the 3D printing process allows for the one or more hollow inner cavities 206 and the one or more vent holes 208 to be formed in the annular body 200 .
- the one or more hollow inner cavities 206 are formed in the annular body 200 .
- the one or more hollow inner cavities 206 are formed in a circle about a centerline 210 of the body 22 .
- the one or more hollow inner cavities 206 may be concentric about the centerline 210 of the annular body 200 .
- the one or more hollow inner cavities 206 are configured to provide a greater surface area for heat to radiate when the cover ring 156 is heated during processing.
- the greater surface area aids in reducing the overall thermal strain of the cover ring 156 .
- the one or more hollow inner cavities 206 results in up to a 30% decrease in thermal expansion.
- the lifetime of the cover ring 156 is increased, thus increasing the number of substrates processed before having to be replaced. Additionally, the reduction in thermal expansion results in less rubbing of the cover ring 156 against other chamber components, which reduces particle generation in the process chamber 100 .
- one or more internal features 230 may be formed in the one or more hollow inner cavities 206 .
- one or more internal features 230 in the form of ribs or fins may be formed in the one or more hollow inner cavities.
- the one or more internal features 230 are configured to increase the rigidity of the cover ring 156 .
- an optional hole 250 may be formed in each of the one or more internal features.
- the optional holes are configured to vent areas formed in the one or more hollow inner cavities 206 by the one or more internal features 230 .
- the one or more vent holes 208 are formed in the annular body 200 .
- the one or more vent holes 208 are in fluid communication with the one or more hollow inner cavities 206 .
- the one or more vent holes 208 are configured to vent the hollow inner cavities 206 .
- the one or more vent holes 208 have an open area of about 3.14 mm 2 . Venting the hollow inner cavities 206 ensures that pressure will not build up in the hollow inner cavities 206 and distort the cover ring 156 .
- the one or more vent holes 208 may be formed in the annular body 200 on an exterior surface that is not facing the plasma processing region (e.g., not on the top surface).
- the cover ring 156 may include a first vent hole 214 and a second vent hole 216 , the first vent hole 214 formed on an opposite side of the body 200 relative to the second vent hole 216 . Positioning the first and second vent holes 214 , 216 at opposite sides of the body 200 allows any dust or other contaminant to be removed by blowing air into the first vent hole 214 such that the dust exits the hollow inner cavities 206 through the second vent hole 216 .
- FIG. 3 illustrates a top cross-sectional view of the cover ring 156 of FIG. 2 , according to one embodiment.
- the cover ring 156 includes an inner diameter 218 and an outer diameter 220 .
- the inner diameter 218 is shorter than the outer diameter 220 .
- the cover ring 156 is shown with one or more hollow inner cavities 206 formed therein.
- the one or more hollow inner cavities 206 are formed about the centerline 211 of the cover ring 156 .
- the one or more hollow inner cavities 206 are all interconnected. Interconnecting the one or more hollow inner cavities 206 allows for uniform pressure throughout the cover ring 156 .
- FIG. 4 illustrates a top cross-sectional view of the cover ring 156 , according to another embodiment.
- the cover ring 156 includes a first row 402 and a second row 404 of hollow inner cavities 206 formed therein.
- the hollow inner cavities 206 of the first row 402 and the hollow inner cavities of the second row are formed about the centerline 211 of the cover ring 156 .
- the hollow inner cavities 206 of the first row 402 are interconnected along the first row 402 and the hollow inner cavities 206 of the second row 404 are interconnected along the second row 404 .
- the hollow inner cavities 206 are interconnected across the first and second rows 402 , 404 as well.
- FIGS. 5A and 5B are a cross-sectional views illustrating the deposition ring 152 and deposition ring 152 ′, according to one embodiment.
- Deposition ring 152 ′ may be used in place of deposition ring 152 in processing chamber 100 .
- Deposition ring 152 ′ is substantially similar to deposition ring 152 .
- the deposition ring 152 includes an annular body 500 .
- the annular body 500 may be formed from a plasma resistant material.
- the annular body 500 may be formed from stainless steel.
- the annular body 500 may be formed through a three-dimensional (3D) printing or other suitable process.
- the annular body 500 includes a top surface 502 and a bottom surface 504 .
- the top surface 502 faces the plasma processing region 180 of the process chamber 100 .
- the top surface 502 is configured to at least partially support the body 500 .
- the top surface 502 may include a three-dimensionally printed surface texture.
- the bottom surface 504 is perpendicular to a centerline 510 of the deposition ring 152 .
- the bottom surface 504 is substantially flat.
- the bottom surface 504 is configured to be at least partially supported by the substrate support 120 .
- the deposition ring 152 further comprises one or more hollow inner cavities 206 and one or more vent holes 508 .
- the 3D printing process allows for the one or more hollow inner cavities 506 and the one or more vent holes 508 to be formed in the body 500 .
- the one or more hollow inner cavities 506 are formed in the annular body 500 .
- the one or more hollow inner cavities 506 are formed in a circle about a centerline 510 of the body 500 .
- the one or more hollow inner cavities 506 may be concentric about the centerline 510 of with the annular body 500 .
- the one or more hollow inner cavities 506 are configured to provide a greater surface area for heat to radiate when the deposition ring 152 is heated during processing.
- the greater surface area aids in reducing the overall thermal strain of the deposition ring 152 .
- the one or more hollow inner cavities 506 results in up to a 30% decrease in thermal expansion.
- the thermal expansion of the deposition ring 152 the lifetime of the deposition ring 152 is increased, thus increasing the number of substrates processed before having to be replaced. Additionally, the reduction in thermal expansion results in less rubbing of the deposition ring 152 against other components, which reduces particle generation in the process chamber 100 .
- one or more internal features 530 may be formed in the one or more hollow inner cavities 506 .
- one or more internal features 530 in the form of ribs or fins may be formed in the one or more hollow inner cavities.
- the one or more internal features 530 are configured to increase the rigidity of the deposition ring 152 .
- the one or more vent holes 508 are in fluid communication with the one or more hollow inner cavities 506 .
- the one or more vent holes 508 are configured to vent the hollow inner cavities 506 .
- the one or more vent holes 508 have an open area of about 3.14 mm 2 . Venting the hollow inner cavities 506 ensures that pressure will not build up in the hollow inner cavities 506 and distort the deposition ring 152 .
- the one or more vent holes 508 may be formed in the annular body 500 on an exterior surface that is not facing the plasma processing region (e.g., not on the top surface).
- the deposition ring 152 may include a first vent hole 514 and a second vent hole 516 , the first vent hole 514 formed on an opposite side of the body 500 relative to the second vent hole 516 . Positioning the first and second vent holes 514 , 516 at opposite sides of the body 500 allows any dust or other contaminants to be removed by blowing air into the first vent hole 514 such that the dust exits the hollow inner cavities 506 through the second vent hole 516 .
- FIG. 5 is a cross-sectional view illustrating the deposition ring 152 ′, according to another embodiment.
- Deposition ring 152 ′ may be used in place of deposition ring 152 in processing chamber 100 .
- FIG. 6 illustrates a top cross-sectional view of the deposition ring 152 of FIG. 2 , according to one embodiment.
- the deposition ring 152 includes an inner diameter 518 and an outer diameter 520 .
- the inner diameter 518 is shorter than the outer diameter 520 .
- the deposition ring 152 is shown with one or more hollow inner cavities 506 formed therein.
- the one or more hollow inner cavities 506 are formed about the centerline 511 of the deposition ring 152 .
- the one or more hollow inner cavities 506 are all interconnected. Interconnecting the one or more hollow inner cavities 506 allows for uniform pressure throughout the deposition ring 152 .
- FIG. 7 illustrates a top cross-sectional view of the cover ring 156 , according to another embodiment.
- the cover ring 156 includes a first row 702 and a second row 704 of hollow inner cavities 506 formed therein.
- the hollow inner cavities 506 of the first row 702 and the hollow inner cavities of the second row are formed about the centerline 511 of the cover ring 156 .
- the hollow inner cavities 506 of the first row 702 are interconnected along the first row 702 and the hollow inner cavities 506 of the second row 704 are interconnected along the second row 704 .
- the hollow inner cavities 506 are interconnected across the first and second rows 702 , 704 as well.
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Abstract
Description
- This application is a continuation of U.S. patent application Ser. No. 15/233,613, filed Aug. 10, 2016, which is incorporated by reference herein.
- Embodiments described herein generally relate to a processing chamber, and more specifically, to component rings of a processing chamber.
- Physical vapor deposition (PVD) is one of the most commonly used processes in the fabrication of electronic devices. PVD is a plasma process performed in a vacuum chamber where negatively biased target is exposed to a plasma of an inert gas having relatively heavy atoms (e.g., argon) or a gas mixture comprising such inert gas. Bombardment of the target by ions of the inert gas results in ejection of atoms of the target material. The ejected atoms accumulate as a deposited film on a substrate placed on a substrate support disposed in the chamber.
- A process kit may be disposed in the chamber to help define a processing region in a desired region within the chamber with respect to the substrate. The process kit may include at least a cover ring and a deposition ring. The deposition ring may be configured to prevent deposition on the perimeter of the substrate support pedestal. The cover ring may be configured to create a gap between the deposition ring to prevent deposition below the substrate. During processing, the deposition ring and the cover ring may be heated to high temperatures. The high temperature results in thermal expansion of the deposition ring and the cover ring, which, over time, decreases the life of the deposition ring and the cover ring.
- Therefore, there is a need for improved process kits for a processing chamber.
- In one embodiment, a process kit ring for use in a plasma processing system is disclosed herein. The process kit ring includes an annular body and one or more hollow inner cavities. The annular body is formed from a plasma resistant material. The annular body has an outer diameter greater than 200 mm. The annular body includes a top surface and a bottom surface. The top surface is configured to face a plasma processing region of a process chamber. The bottom surface is opposite the top surface. The bottom surface is substantially perpendicular to a centerline of the body. The bottom surface is supported at least partially by a pedestal assembly. The one or more hollow inner cavities are formed in the annular body about the centerline. The one or more hollow inner cavities are arranged in a circle within the annular body.
- In another embodiment, a process kit for a substrate processing chamber is disclosed herein. The process kit includes a first process kit ring and a second process kit ring. The first process kit includes a first body and one or more first hollow inner cavities. The first body is formed from a plasma resistant material. The first body has a first outer diameter greater than 200 mm. The first body includes a first top surface and a first bottom surface. The first top surface faces a plasma processing region of a process chamber. The first top surface is configured to at least partially support a second process kit ring. The first bottom surface is opposite the first top surface. The first bottom surface is substantially perpendicular to a first centerline of the first body and supported at least partially by a pedestal assembly. The second process kit ring at least partially covers the first process kit ring. The second process kit ring includes a second body and one or more second hollow inner cavities. The second body is formed from a second plasma resistant material. The second body includes a second outer diameter greater than 200 mm. The second body includes a second top surface and a second bottom surface. The second top surface faces the plasma processing region of the processing chamber. The second bottom surface is opposite the second top surface. The second bottom surface is substantially parallel to a second centerline of the second process kit ring. The second bottom surface is configured to at least partially cover the first process kit ring. The one or more second hollow inner cavities are formed in the second body about the centerline. The one or more second hollow inner cavities are arranged in a circle within the second body.
- So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
-
FIG. 1 illustrates an exemplary semiconductor processing chamber, according to one embodiment. -
FIG. 2A is a cross-sectional view illustrating the cover ring ofFIG. 1 , according to one embodiment. -
FIG. 2B is a cross-sectional view illustrating the cover ring ofFIG. 1 , according to another embodiment. -
FIG. 3 illustrates a top cross-sectional view of the cover ring ofFIG. 2 , according to one embodiment. -
FIG. 4 illustrates a top view cross-sectional view of the cover ring ofFIG. 1 , according to one embodiment. -
FIG. 5A is a cross-sectional view illustrating the deposition ring ofFIG. 1 , according to one embodiment. -
FIG. 5B is a cross-sectional view illustrating the deposition ring ofFIG. 1 , according to another embodiment. -
FIG. 6 illustrates a top cross-sectional view of the deposition ring ofFIG. 5 , according to one embodiment. -
FIG. 7 illustrates a top view cross-sectional view of the deposition ring ofFIG. 1 , according to one embodiment. - For clarity, identical reference numerals have been used, where applicable, to designate identical elements that are common between figures. Additionally, elements of one embodiment may be advantageously adapted for utilization in other embodiments described herein.
-
FIG. 1 illustrates an exemplarysemiconductor processing chamber 100, according to one embodiment. As shown, theprocessing chamber 100 is a physical vapor deposition (PVD) chamber, capable of depositing metal or ceramic materials, such as for example, titanium, aluminum oxide, aluminum, copper, tantalum, tantalum nitride, tantalum carbide, tungsten, tungsten nitride, lanthanum, lanthanum oxides, titanium nitride, nickel, and NiPt, among others. One example of a processing chamber that may be adapted to benefit from the disclosure is the ALPS® Plus and SIP ENCORE® PVD processing chambers, commercially available from Applied Materials, Inc. of Santa Clara, Calif. It is contemplated that other processing chambers including those from other manufacturers may be adapted to benefit from the disclosure. - The
processing chamber 100 includes achamber body 102 havingupper adapters 104,lower adapters 106, a bottom 108, and alid assembly 110 that encloses aninterior volume 112. Thechamber bottom 106 generally includes a slit valve (not shown) to provide entry and egress of asubstrate 101 from theprocessing chamber 100. - The
semiconductor processing chamber 100 includes apedestal assembly 114 and aprocess kit 150. Thepedestal assembly 114 may be supported from thebottom 108 of thechamber 100. Theprocess kit 150 includes at least adeposition ring 152 supported on thepedestal assembly 114. Theprocess kit 150 may also include one or both of aground shield 154 and aninterleaving cover ring 156. Thepedestal assembly 114 is coupled to thebottom 106 of thechamber 100 by alift mechanism 116 that is configured to move thepedestal assembly 114 between an upper and lower position. In the lower position, lift pins (not shown) are moved through thepedestal assembly 114 to space the substrate from thepedestal assembly 114 to facilitate exchange of the substrate with a substrate transfer mechanism disposed exterior to the processing chamber. A bellows 118 may be disposed between thepedestal assembly 114 and the bottom 108 to isolate theinterior volume 112 of thechamber body 102 from the interior of thepedestal assembly 114 and the exterior of thechamber 100. - The
pedestal assembly 114 generally includes asubstrate support 120 sealingly coupled to abase plate 122, which is coupled to aground plate 124. Thesubstrate support 120 may be comprised of aluminum or ceramic. Thesubstrate support 120 may be an electrostatic chuck, a ceramic body, a heater, or a combination thereof. The dielectric body may be fabricated from a high thermal conductivity dielectric material, such as pyrolytic boron nitride, aluminum nitride, silicon nitride, or the like. Thesubstrate support 120 has asubstrate receiving surface 126 that receives and supports thesubstrate 101 during processing. Thesubstrate receiving surface 126 has a plane substantially parallel to asputtering surface 128 of thetarget 132. - The
process kit 150 comprises various components that can be easily removed from thechamber 100, for example, to clean sputtering deposits off the component surfaces, replace or repair eroded components, or to adapt thechamber 100 for other processes. As discussed above, theprocess kit 150 includes at least one or more of thedeposition ring 152, theground shield 154 and thecover ring 156. In one embodiment, thecover ring 156 anddeposition ring 152 are placed about aperipheral edge 130 of thesubstrate support 120. Thedeposition ring 152 andcover ring 156 are discussed in more detail inFIGS. 2-7 . Thedeposition ring 152 andcover ring 156 may be formed from a 3D printing, lithography, or casting process, which allows one or more hollow inner cavities to be formed in the bodies of thedeposition ring 152 andcover ring 156. This results in an increased surface area (including internal surfaces) for thedeposition ring 152 andcover ring 156, which advantageously results in up to a 30% decrease in thermal expansion when thedeposition ring 152 andcover ring 156 are heated. - The
lid assembly 110 generally includes atarget backing plate 131, atarget 132, and amagnetron 134. Thetarget backing plate 131 is supported by theupper adapters 104 when in a closed position. Aceramic ring seal 136 may be disposed between thetarget backing plate 131 andupper adapters 104 to prevent vacuum leakage therebetween. Thetarget 132 is coupled to thetarget backing plate 131 and exposed to theinterior volume 112 of theprocessing chamber 100. Thetarget 132 provides material which is deposited on thesubstrate 101 during a PVD process. - The
process chamber 100 is coupled to apower source 140 and agas source 142. A gas, such as argon, may be supplied to theinterior volume 112 from thegas source 142 viaconduits 144. Thegas source 142 may comprise a non-reactive gas such as argon or xenon, which is capable of energetically impinging upon and sputtering material from thetarget 132. Thegas source 142 may also include a reactive gas. A plasma is formed between thesubstrate 101 and thetarget 132, defined as theplasma processing region 180. Ions within the plasma are accelerated toward thetarget 132 and cause material to become dislodged from thetarget 132. The dislodged target material is deposited on thesubstrate 101. -
FIGS. 2A and 2B are a cross-sectional view illustrating thecover ring 156, according to one embodiment. Thecover ring 156 includes anannular body 200. Theannular body 200 is formed from a plasma resistant material. For example, theannular body 200 is formed from stainless steel. In one embodiment, theannular body 200 may be formed through a three-dimensional (3D) printing or other suitable process. Theannular body 200 includes atop surface 202 and abottom surface 204. Thetop surface 202 faces the plasma processing region of theprocess chamber 100. In one embodiment, thetop surface 202 may include a three-dimensionally printed surface texture. Thebottom surface 204 is perpendicular to acenterline 210 of thebody 200. In one embodiment, thebottom surface 204 is substantially flat. Thebottom surface 204 is configured to at least partially cover thedeposition ring 152. - The
cover ring 156 further comprises one or more hollowinner cavities 206 and one or more vent holes 208. The 3D printing process allows for the one or more hollowinner cavities 206 and the one or more vent holes 208 to be formed in theannular body 200. The one or more hollowinner cavities 206 are formed in theannular body 200. In one embodiment, the one or more hollowinner cavities 206 are formed in a circle about acenterline 210 of the body 22. For example, the one or more hollowinner cavities 206 may be concentric about thecenterline 210 of theannular body 200. The one or more hollowinner cavities 206 are configured to provide a greater surface area for heat to radiate when thecover ring 156 is heated during processing. The greater surface area aids in reducing the overall thermal strain of thecover ring 156. In one example, the one or more hollowinner cavities 206 results in up to a 30% decrease in thermal expansion. By reducing the thermal expansion of thecover ring 156, the lifetime of thecover ring 156 is increased, thus increasing the number of substrates processed before having to be replaced. Additionally, the reduction in thermal expansion results in less rubbing of thecover ring 156 against other chamber components, which reduces particle generation in theprocess chamber 100. In one embodiment, one or moreinternal features 230 may be formed in the one or more hollowinner cavities 206. For example, one or moreinternal features 230 in the form of ribs or fins may be formed in the one or more hollow inner cavities. The one or moreinternal features 230 are configured to increase the rigidity of thecover ring 156. When the one or moreinternal features 230 extend through the one or more hollow inner cavities 206 (such as that shown inFIG. 2B ), anoptional hole 250 may be formed in each of the one or more internal features. The optional holes are configured to vent areas formed in the one or more hollowinner cavities 206 by the one or moreinternal features 230. - The one or more vent holes 208 are formed in the
annular body 200. The one or more vent holes 208 are in fluid communication with the one or more hollowinner cavities 206. The one or more vent holes 208 are configured to vent the hollowinner cavities 206. In one embodiment, the one or more vent holes 208 have an open area of about 3.14 mm2. Venting the hollowinner cavities 206 ensures that pressure will not build up in the hollowinner cavities 206 and distort thecover ring 156. Generally, the one or more vent holes 208 may be formed in theannular body 200 on an exterior surface that is not facing the plasma processing region (e.g., not on the top surface). In one embodiment, thecover ring 156 may include afirst vent hole 214 and asecond vent hole 216, thefirst vent hole 214 formed on an opposite side of thebody 200 relative to thesecond vent hole 216. Positioning the first and second vent holes 214, 216 at opposite sides of thebody 200 allows any dust or other contaminant to be removed by blowing air into thefirst vent hole 214 such that the dust exits the hollowinner cavities 206 through thesecond vent hole 216. -
FIG. 3 illustrates a top cross-sectional view of thecover ring 156 ofFIG. 2 , according to one embodiment. As shown, thecover ring 156 includes aninner diameter 218 and anouter diameter 220. Theinner diameter 218 is shorter than theouter diameter 220. Thecover ring 156 is shown with one or more hollowinner cavities 206 formed therein. The one or more hollowinner cavities 206 are formed about the centerline 211 of thecover ring 156. In one embodiment, the one or more hollowinner cavities 206 are all interconnected. Interconnecting the one or more hollowinner cavities 206 allows for uniform pressure throughout thecover ring 156. -
FIG. 4 illustrates a top cross-sectional view of thecover ring 156, according to another embodiment. As shown, thecover ring 156 includes afirst row 402 and asecond row 404 of hollowinner cavities 206 formed therein. The hollowinner cavities 206 of thefirst row 402 and the hollow inner cavities of the second row are formed about the centerline 211 of thecover ring 156. In one embodiment, the hollowinner cavities 206 of thefirst row 402 are interconnected along thefirst row 402 and the hollowinner cavities 206 of thesecond row 404 are interconnected along thesecond row 404. In another embodiment, the hollowinner cavities 206 are interconnected across the first andsecond rows -
FIGS. 5A and 5B are a cross-sectional views illustrating thedeposition ring 152 anddeposition ring 152′, according to one embodiment.Deposition ring 152′ may be used in place ofdeposition ring 152 inprocessing chamber 100.Deposition ring 152′ is substantially similar todeposition ring 152. Thedeposition ring 152 includes anannular body 500. Theannular body 500 may be formed from a plasma resistant material. For example, theannular body 500 may be formed from stainless steel. In one embodiment, theannular body 500 may be formed through a three-dimensional (3D) printing or other suitable process. Theannular body 500 includes atop surface 502 and abottom surface 504. Thetop surface 502 faces theplasma processing region 180 of theprocess chamber 100. Thetop surface 502 is configured to at least partially support thebody 500. In one embodiment, thetop surface 502 may include a three-dimensionally printed surface texture. Thebottom surface 504 is perpendicular to acenterline 510 of thedeposition ring 152. In one embodiment, thebottom surface 504 is substantially flat. Thebottom surface 504 is configured to be at least partially supported by thesubstrate support 120. - The
deposition ring 152 further comprises one or more hollowinner cavities 206 and one or more vent holes 508. The 3D printing process allows for the one or more hollowinner cavities 506 and the one or more vent holes 508 to be formed in thebody 500. The one or more hollowinner cavities 506 are formed in theannular body 500. In one embodiment, the one or more hollowinner cavities 506 are formed in a circle about acenterline 510 of thebody 500. For example, the one or more hollowinner cavities 506 may be concentric about thecenterline 510 of with theannular body 500. The one or more hollowinner cavities 506 are configured to provide a greater surface area for heat to radiate when thedeposition ring 152 is heated during processing. The greater surface area aids in reducing the overall thermal strain of thedeposition ring 152. In one example, the one or more hollowinner cavities 506 results in up to a 30% decrease in thermal expansion. By reducing the thermal expansion of thedeposition ring 152, the lifetime of thedeposition ring 152 is increased, thus increasing the number of substrates processed before having to be replaced. Additionally, the reduction in thermal expansion results in less rubbing of thedeposition ring 152 against other components, which reduces particle generation in theprocess chamber 100. In one embodiment, one or moreinternal features 530 may be formed in the one or more hollowinner cavities 506. For example, one or moreinternal features 530 in the form of ribs or fins may be formed in the one or more hollow inner cavities. The one or moreinternal features 530 are configured to increase the rigidity of thedeposition ring 152. - The one or more vent holes 508 are in fluid communication with the one or more hollow
inner cavities 506. The one or more vent holes 508 are configured to vent the hollowinner cavities 506. In one embodiment, the one or more vent holes 508 have an open area of about 3.14 mm2. Venting the hollowinner cavities 506 ensures that pressure will not build up in the hollowinner cavities 506 and distort thedeposition ring 152. Generally, the one or more vent holes 508 may be formed in theannular body 500 on an exterior surface that is not facing the plasma processing region (e.g., not on the top surface). In one embodiment, thedeposition ring 152 may include afirst vent hole 514 and asecond vent hole 516, thefirst vent hole 514 formed on an opposite side of thebody 500 relative to thesecond vent hole 516. Positioning the first and second vent holes 514, 516 at opposite sides of thebody 500 allows any dust or other contaminants to be removed by blowing air into thefirst vent hole 514 such that the dust exits the hollowinner cavities 506 through thesecond vent hole 516. -
FIG. 5 is a cross-sectional view illustrating thedeposition ring 152′, according to another embodiment.Deposition ring 152′ may be used in place ofdeposition ring 152 inprocessing chamber 100. -
FIG. 6 illustrates a top cross-sectional view of thedeposition ring 152 ofFIG. 2 , according to one embodiment. As shown, thedeposition ring 152 includes aninner diameter 518 and anouter diameter 520. Theinner diameter 518 is shorter than theouter diameter 520. Thedeposition ring 152 is shown with one or more hollowinner cavities 506 formed therein. The one or more hollowinner cavities 506 are formed about the centerline 511 of thedeposition ring 152. In one embodiment, the one or more hollowinner cavities 506 are all interconnected. Interconnecting the one or more hollowinner cavities 506 allows for uniform pressure throughout thedeposition ring 152. -
FIG. 7 illustrates a top cross-sectional view of thecover ring 156, according to another embodiment. As shown, thecover ring 156 includes afirst row 702 and asecond row 704 of hollowinner cavities 506 formed therein. The hollowinner cavities 506 of thefirst row 702 and the hollow inner cavities of the second row are formed about the centerline 511 of thecover ring 156. In one embodiment, the hollowinner cavities 506 of thefirst row 702 are interconnected along thefirst row 702 and the hollowinner cavities 506 of thesecond row 704 are interconnected along thesecond row 704. In another embodiment, the hollowinner cavities 506 are interconnected across the first andsecond rows - While the foregoing is directed to specific embodiments, other and further embodiments may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (20)
Priority Applications (1)
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US16/446,188 US20190301007A1 (en) | 2016-08-10 | 2019-06-19 | Thermally optimized rings |
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US15/233,613 US10435784B2 (en) | 2016-08-10 | 2016-08-10 | Thermally optimized rings |
US16/446,188 US20190301007A1 (en) | 2016-08-10 | 2019-06-19 | Thermally optimized rings |
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USD931240S1 (en) | 2019-07-30 | 2021-09-21 | Applied Materials, Inc. | Substrate support pedestal |
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US5685914A (en) * | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
US6206976B1 (en) * | 1999-08-27 | 2001-03-27 | Lucent Technologies Inc. | Deposition apparatus and related method with controllable edge exclusion |
US20050048876A1 (en) | 2003-09-02 | 2005-03-03 | Applied Materials, Inc. | Fabricating and cleaning chamber components having textured surfaces |
US20060138925A1 (en) | 2004-12-28 | 2006-06-29 | Yi-Fang Cheng | Plasma processing device having a ring-shaped air chamber for heat dissipation |
US9127362B2 (en) * | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US7355192B2 (en) | 2006-03-30 | 2008-04-08 | Intel Corporation | Adjustable suspension assembly for a collimating lattice |
US8522715B2 (en) * | 2008-01-08 | 2013-09-03 | Lam Research Corporation | Methods and apparatus for a wide conductance kit |
JP5350043B2 (en) * | 2009-03-31 | 2013-11-27 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP5601794B2 (en) * | 2009-05-29 | 2014-10-08 | 株式会社東芝 | Plasma etching equipment |
KR101585883B1 (en) * | 2010-10-29 | 2016-01-15 | 어플라이드 머티어리얼스, 인코포레이티드 | Deposition ring and electrostatic chuck for physical vapor deposition chamber |
US9682398B2 (en) * | 2012-03-30 | 2017-06-20 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
US9863648B2 (en) * | 2013-02-21 | 2018-01-09 | Benjamin J. Weinraub | Equipment protector with buoyant rim |
EP2984674B1 (en) | 2013-04-08 | 2018-06-06 | Oerlikon Surface Solutions AG, Pfäffikon | Sputtering target having increased power compatibility |
US9293304B2 (en) | 2013-12-17 | 2016-03-22 | Applied Materials, Inc. | Plasma thermal shield for heat dissipation in plasma chamber |
US20160155657A1 (en) * | 2014-12-02 | 2016-06-02 | Applied Materials, Inc. | Surface profile modifications for extended life of consumable parts in semiconductor processing equipment |
WO2016099826A1 (en) | 2014-12-19 | 2016-06-23 | Applied Materials, Inc. | Edge ring for a substrate processing chamber |
JP6937753B2 (en) * | 2015-12-07 | 2021-09-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Fused cover ring |
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