SG11201808579TA - Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device - Google Patents
Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201808579TA SG11201808579TA SG11201808579TA SG11201808579TA SG11201808579TA SG 11201808579T A SG11201808579T A SG 11201808579TA SG 11201808579T A SG11201808579T A SG 11201808579TA SG 11201808579T A SG11201808579T A SG 11201808579TA SG 11201808579T A SG11201808579T A SG 11201808579TA
- Authority
- SG
- Singapore
- Prior art keywords
- particles
- mass
- copper particles
- copper
- manufacturing
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 14
- 229910052802 copper Inorganic materials 0.000 title abstract 14
- 239000010949 copper Substances 0.000 title abstract 14
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002245 particle Substances 0.000 abstract 17
- 239000002612 dispersion medium Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J1/00—Adhesives based on inorganic constituents
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/068—Flake-like particles
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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- B32—LAYERED PRODUCTS
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- B22F2301/00—Metallic composition of the powder or its coating
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/30—Technical effects
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- H01L2924/351—Thermal stress
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- H01L2924/35121—Peeling or delaminating
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- Organic Chemistry (AREA)
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- Die Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016090981 | 2016-04-28 | ||
PCT/JP2017/015912 WO2017188123A1 (fr) | 2016-04-28 | 2017-04-20 | Pâte de cuivre de liaison, procédé de fabrication de corps relié et procédé de fabrication de dispositif semi-conducteur |
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SG11201808579TA true SG11201808579TA (en) | 2018-11-29 |
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SG11201808579TA SG11201808579TA (en) | 2016-04-28 | 2017-04-20 | Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device |
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US (1) | US10748865B2 (fr) |
EP (1) | EP3450053A4 (fr) |
JP (1) | JP6866893B2 (fr) |
KR (1) | KR102379883B1 (fr) |
CN (1) | CN109070206B (fr) |
MY (1) | MY194769A (fr) |
SG (1) | SG11201808579TA (fr) |
TW (1) | TWI743112B (fr) |
WO (1) | WO2017188123A1 (fr) |
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EP3569329B1 (fr) * | 2017-01-11 | 2023-11-01 | Resonac Corporation | Pâte de cuivre pour liaison sans pression, corps lié et dispositif semi-conducteur |
WO2019123856A1 (fr) * | 2017-12-18 | 2019-06-27 | Dic株式会社 | Corps fritté de particules fines de cuivre |
JP7093945B2 (ja) * | 2018-02-28 | 2022-07-01 | 公立大学法人大阪 | ナノ銀ペーストを用いた半導体チップ接合方法 |
JP7187835B2 (ja) * | 2018-06-19 | 2022-12-13 | 昭和電工マテリアルズ株式会社 | 導体形成用組成物及びその製造方法、並びに、導体層を有する物品及びその製造方法 |
CN110729445A (zh) * | 2018-07-16 | 2020-01-24 | 深圳先进技术研究院 | 具有涂层的极耳及其制备方法、电芯、电池和电动工具 |
JP7127407B2 (ja) * | 2018-07-25 | 2022-08-30 | 昭和電工マテリアルズ株式会社 | 接合用金属ペースト、接合体及び接合体の製造方法 |
JP6526889B1 (ja) * | 2018-08-01 | 2019-06-05 | Jx金属株式会社 | セラミックス層と銅粉ペースト焼結体の積層体 |
JP6526888B1 (ja) * | 2018-08-01 | 2019-06-05 | Jx金属株式会社 | セラミックス層と銅粉ペースト焼結体の積層体 |
CN113166945B (zh) * | 2018-11-29 | 2024-01-02 | 株式会社力森诺科 | 接合体及半导体装置的制造方法 |
KR102368533B1 (ko) * | 2019-04-23 | 2022-03-02 | 주식회사 경동엠텍 | 레이저 소결에 의한 반도체 칩의 접합방법 |
KR102258498B1 (ko) * | 2019-04-23 | 2021-06-01 | 주식회사 경동엠텍 | 레이저 소결에 의한 반도체 칩의 접합방법 |
JP2021036067A (ja) * | 2019-08-30 | 2021-03-04 | 昭和電工マテリアルズ株式会社 | 物品の製造方法及び金属焼結体層形成用組成物 |
JPWO2021060204A1 (fr) * | 2019-09-25 | 2021-04-01 | ||
JP7463681B2 (ja) | 2019-09-30 | 2024-04-09 | 株式会社レゾナック | 接合体の製造方法及び接合体 |
US20220371087A1 (en) | 2019-09-30 | 2022-11-24 | Showa Denko Materials Co., Ltd. | Copper paste for joining, method for manufacturing joined body, and joined body |
JP7391678B2 (ja) * | 2020-01-24 | 2023-12-05 | 大陽日酸株式会社 | 接合材 |
JP7508802B2 (ja) | 2020-02-14 | 2024-07-02 | 株式会社レゾナック | 接合用金属ペースト、接合体、半導体装置、及び接合体の製造方法 |
CN116275058A (zh) * | 2023-03-28 | 2023-06-23 | 哈尔滨工业大学 | 一种微纳米合金接头的多场耦合快速制备方法 |
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JP3467872B2 (ja) * | 1994-12-02 | 2003-11-17 | 株式会社村田製作所 | 多層セラミック基板の製造方法 |
JP3237497B2 (ja) * | 1995-12-27 | 2001-12-10 | 株式会社村田製作所 | 導電ペースト並びにそれを用いた導電体及びセラミック基板 |
CN101870218A (zh) * | 2005-01-14 | 2010-10-27 | 卡伯特公司 | 防伪特征件、其使用及其制造方法 |
US20060163744A1 (en) * | 2005-01-14 | 2006-07-27 | Cabot Corporation | Printable electrical conductors |
JP5006081B2 (ja) | 2007-03-28 | 2012-08-22 | 株式会社日立製作所 | 半導体装置、その製造方法、複合金属体及びその製造方法 |
JP5611537B2 (ja) * | 2009-04-28 | 2014-10-22 | 日立化成株式会社 | 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置 |
JP4928639B2 (ja) | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
WO2011114747A1 (fr) * | 2010-03-18 | 2011-09-22 | 古河電気工業株式会社 | Pâte électriquement conductrice et élément de connexion électriquement conducteur produit à l'aide de la pâte |
TWI527069B (zh) * | 2012-02-21 | 2016-03-21 | Jx Nippon Mining & Metals Corp | And a method for producing metal powder paste |
JP2013206765A (ja) * | 2012-03-29 | 2013-10-07 | Tanaka Kikinzoku Kogyo Kk | ダイボンド用導電性ペースト及び該導電性ペーストによるダイボンド方法 |
US20130256894A1 (en) * | 2012-03-29 | 2013-10-03 | International Rectifier Corporation | Porous Metallic Film as Die Attach and Interconnect |
JP5598739B2 (ja) * | 2012-05-18 | 2014-10-01 | 株式会社マテリアル・コンセプト | 導電性ペースト |
JP5980574B2 (ja) * | 2012-05-29 | 2016-08-31 | ハリマ化成株式会社 | 導電性金属厚膜形成用材料および導電性金属厚膜の形成方法 |
KR20150064054A (ko) | 2012-10-03 | 2015-06-10 | 도다 고교 가부시끼가이샤 | 은 하이브리드 구리분과 그의 제조법, 상기 은 하이브리드 구리분을 함유하는 도전성 페이스트, 도전성 접착제, 도전성 막 및 전기 회로 |
CN104246910B (zh) * | 2012-10-30 | 2016-06-08 | 化研科技株式会社 | 导电性糊料和芯片焊接方法 |
JP6199048B2 (ja) | 2013-02-28 | 2017-09-20 | 国立大学法人大阪大学 | 接合材 |
JP6061248B2 (ja) * | 2013-03-29 | 2017-01-18 | 国立研究開発法人産業技術総合研究所 | 接合方法及び半導体モジュールの製造方法 |
JP2015109434A (ja) * | 2013-10-23 | 2015-06-11 | 日立化成株式会社 | ダイボンド層付き半導体素子搭載用支持部材、ダイボンド層付き半導体素子及びダイボンド層付き接合板 |
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US20200176411A1 (en) | 2020-06-04 |
KR102379883B1 (ko) | 2022-03-30 |
CN109070206A (zh) | 2018-12-21 |
CN109070206B (zh) | 2021-04-20 |
TW201739927A (zh) | 2017-11-16 |
TWI743112B (zh) | 2021-10-21 |
EP3450053A1 (fr) | 2019-03-06 |
US10748865B2 (en) | 2020-08-18 |
JPWO2017188123A1 (ja) | 2019-03-07 |
MY194769A (en) | 2022-12-15 |
WO2017188123A1 (fr) | 2017-11-02 |
KR20190003516A (ko) | 2019-01-09 |
EP3450053A4 (fr) | 2019-12-25 |
JP6866893B2 (ja) | 2021-04-28 |
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