SG11201808579TA - Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device - Google Patents

Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device

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Publication number
SG11201808579TA
SG11201808579TA SG11201808579TA SG11201808579TA SG11201808579TA SG 11201808579T A SG11201808579T A SG 11201808579TA SG 11201808579T A SG11201808579T A SG 11201808579TA SG 11201808579T A SG11201808579T A SG 11201808579TA SG 11201808579T A SG11201808579T A SG 11201808579TA
Authority
SG
Singapore
Prior art keywords
particles
mass
copper particles
copper
manufacturing
Prior art date
Application number
SG11201808579TA
Other languages
English (en)
Inventor
Yuki Kawana
Hideo Nakako
Dai Ishikawa
Chie Sugama
Kazuhiko Kurafuchi
Yoshinori Ejiri
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201808579TA publication Critical patent/SG11201808579TA/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J1/00Adhesives based on inorganic constituents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • B22F1/052Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06Metallic powder characterised by the shape of the particles
    • B22F1/068Flake-like particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/041Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233Copper alloys
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00Metallic composition of the powder or its coating
    • B22F2301/10Copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2304/00Physical aspects of the powder
    • B22F2304/10Micron size particles, i.e. above 1 micrometer up to 500 micrometer
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    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers
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    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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SG11201808579TA 2016-04-28 2017-04-20 Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device SG11201808579TA (en)

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EP3569329B1 (fr) * 2017-01-11 2023-11-01 Resonac Corporation Pâte de cuivre pour liaison sans pression, corps lié et dispositif semi-conducteur
WO2019123856A1 (fr) * 2017-12-18 2019-06-27 Dic株式会社 Corps fritté de particules fines de cuivre
JP7093945B2 (ja) * 2018-02-28 2022-07-01 公立大学法人大阪 ナノ銀ペーストを用いた半導体チップ接合方法
JP7187835B2 (ja) * 2018-06-19 2022-12-13 昭和電工マテリアルズ株式会社 導体形成用組成物及びその製造方法、並びに、導体層を有する物品及びその製造方法
CN110729445A (zh) * 2018-07-16 2020-01-24 深圳先进技术研究院 具有涂层的极耳及其制备方法、电芯、电池和电动工具
JP7127407B2 (ja) * 2018-07-25 2022-08-30 昭和電工マテリアルズ株式会社 接合用金属ペースト、接合体及び接合体の製造方法
JP6526889B1 (ja) * 2018-08-01 2019-06-05 Jx金属株式会社 セラミックス層と銅粉ペースト焼結体の積層体
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CN113166945B (zh) * 2018-11-29 2024-01-02 株式会社力森诺科 接合体及半导体装置的制造方法
KR102368533B1 (ko) * 2019-04-23 2022-03-02 주식회사 경동엠텍 레이저 소결에 의한 반도체 칩의 접합방법
KR102258498B1 (ko) * 2019-04-23 2021-06-01 주식회사 경동엠텍 레이저 소결에 의한 반도체 칩의 접합방법
JP2021036067A (ja) * 2019-08-30 2021-03-04 昭和電工マテリアルズ株式会社 物品の製造方法及び金属焼結体層形成用組成物
JPWO2021060204A1 (fr) * 2019-09-25 2021-04-01
JP7463681B2 (ja) 2019-09-30 2024-04-09 株式会社レゾナック 接合体の製造方法及び接合体
US20220371087A1 (en) 2019-09-30 2022-11-24 Showa Denko Materials Co., Ltd. Copper paste for joining, method for manufacturing joined body, and joined body
JP7391678B2 (ja) * 2020-01-24 2023-12-05 大陽日酸株式会社 接合材
JP7508802B2 (ja) 2020-02-14 2024-07-02 株式会社レゾナック 接合用金属ペースト、接合体、半導体装置、及び接合体の製造方法
CN116275058A (zh) * 2023-03-28 2023-06-23 哈尔滨工业大学 一种微纳米合金接头的多场耦合快速制备方法

Family Cites Families (18)

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JP3467872B2 (ja) * 1994-12-02 2003-11-17 株式会社村田製作所 多層セラミック基板の製造方法
JP3237497B2 (ja) * 1995-12-27 2001-12-10 株式会社村田製作所 導電ペースト並びにそれを用いた導電体及びセラミック基板
CN101870218A (zh) * 2005-01-14 2010-10-27 卡伯特公司 防伪特征件、其使用及其制造方法
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
JP5006081B2 (ja) 2007-03-28 2012-08-22 株式会社日立製作所 半導体装置、その製造方法、複合金属体及びその製造方法
JP5611537B2 (ja) * 2009-04-28 2014-10-22 日立化成株式会社 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置
JP4928639B2 (ja) 2010-03-15 2012-05-09 Dowaエレクトロニクス株式会社 接合材およびそれを用いた接合方法
WO2011114747A1 (fr) * 2010-03-18 2011-09-22 古河電気工業株式会社 Pâte électriquement conductrice et élément de connexion électriquement conducteur produit à l'aide de la pâte
TWI527069B (zh) * 2012-02-21 2016-03-21 Jx Nippon Mining & Metals Corp And a method for producing metal powder paste
JP2013206765A (ja) * 2012-03-29 2013-10-07 Tanaka Kikinzoku Kogyo Kk ダイボンド用導電性ペースト及び該導電性ペーストによるダイボンド方法
US20130256894A1 (en) * 2012-03-29 2013-10-03 International Rectifier Corporation Porous Metallic Film as Die Attach and Interconnect
JP5598739B2 (ja) * 2012-05-18 2014-10-01 株式会社マテリアル・コンセプト 導電性ペースト
JP5980574B2 (ja) * 2012-05-29 2016-08-31 ハリマ化成株式会社 導電性金属厚膜形成用材料および導電性金属厚膜の形成方法
KR20150064054A (ko) 2012-10-03 2015-06-10 도다 고교 가부시끼가이샤 은 하이브리드 구리분과 그의 제조법, 상기 은 하이브리드 구리분을 함유하는 도전성 페이스트, 도전성 접착제, 도전성 막 및 전기 회로
CN104246910B (zh) * 2012-10-30 2016-06-08 化研科技株式会社 导电性糊料和芯片焊接方法
JP6199048B2 (ja) 2013-02-28 2017-09-20 国立大学法人大阪大学 接合材
JP6061248B2 (ja) * 2013-03-29 2017-01-18 国立研究開発法人産業技術総合研究所 接合方法及び半導体モジュールの製造方法
JP2015109434A (ja) * 2013-10-23 2015-06-11 日立化成株式会社 ダイボンド層付き半導体素子搭載用支持部材、ダイボンド層付き半導体素子及びダイボンド層付き接合板

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TW201739927A (zh) 2017-11-16
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