SG11201808023TA - Impedance matching system, impedance matching method and semiconductor processing apparatus - Google Patents

Impedance matching system, impedance matching method and semiconductor processing apparatus

Info

Publication number
SG11201808023TA
SG11201808023TA SG11201808023TA SG11201808023TA SG11201808023TA SG 11201808023T A SG11201808023T A SG 11201808023TA SG 11201808023T A SG11201808023T A SG 11201808023TA SG 11201808023T A SG11201808023T A SG 11201808023TA SG 11201808023T A SG11201808023T A SG 11201808023TA
Authority
SG
Singapore
Prior art keywords
impedance matching
processing apparatus
semiconductor processing
matching method
matching system
Prior art date
Application number
SG11201808023TA
Other languages
English (en)
Inventor
Jing Wei
Xiaoyang Cheng
Xingcun Li
Gang Wei
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201610169506.4A external-priority patent/CN107256821B/zh
Priority claimed from CN201610169274.2A external-priority patent/CN107256820B/zh
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201808023TA publication Critical patent/SG11201808023TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
SG11201808023TA 2016-03-23 2016-05-03 Impedance matching system, impedance matching method and semiconductor processing apparatus SG11201808023TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201610169506.4A CN107256821B (zh) 2016-03-23 2016-03-23 阻抗匹配系统、阻抗匹配方法及半导体加工设备
CN201610169274.2A CN107256820B (zh) 2016-03-23 2016-03-23 匹配装置、匹配方法及半导体加工设备
PCT/CN2016/080875 WO2017161641A1 (zh) 2016-03-23 2016-05-03 阻抗匹配系统、阻抗匹配方法及半导体加工设备

Publications (1)

Publication Number Publication Date
SG11201808023TA true SG11201808023TA (en) 2018-10-30

Family

ID=59899164

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201808023TA SG11201808023TA (en) 2016-03-23 2016-05-03 Impedance matching system, impedance matching method and semiconductor processing apparatus

Country Status (6)

Country Link
US (1) US10699881B2 (ko)
JP (1) JP6780009B2 (ko)
KR (1) KR102092213B1 (ko)
SG (1) SG11201808023TA (ko)
TW (1) TWI606758B (ko)
WO (1) WO2017161641A1 (ko)

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CN107968042B (zh) * 2017-11-28 2020-07-17 北京北方华创微电子装备有限公司 一种不同反应腔室之间工艺结果的匹配方法和装置
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
CN109450391A (zh) * 2018-09-30 2019-03-08 深圳市安芯物联科技有限公司 射频阻抗匹配方法、控制装置和匹配器、以及射频设备
US10910197B2 (en) * 2018-10-19 2021-02-02 Mks Instruments, Inc. Impedance matching network model based correction scheme and performance repeatability
JP7253415B2 (ja) * 2019-03-22 2023-04-06 株式会社ダイヘン インピーダンス整合装置及びインピーダンス整合方法
JP7423233B2 (ja) 2019-09-26 2024-01-29 株式会社ダイヘン 高周波電源装置及び高周波電力の出力方法
KR102077512B1 (ko) * 2019-10-18 2020-04-07 (주)에이에스엔지니어링 멀티 채널 rf 전원 공급장치
KR20220015764A (ko) * 2020-07-31 2022-02-08 삼성전기주식회사 Rf 스위치 시스템, rf 스위치 보호 회로, 그리고 이의 보호 방법
CN112363973B (zh) * 2020-10-30 2024-04-26 科华数据股份有限公司 机器并联系统
CN114914146B (zh) * 2022-05-07 2024-06-21 北京北方华创微电子装备有限公司 射频匹配器及其控制方法、半导体工艺设备
KR20230171330A (ko) * 2022-06-13 2023-12-20 전북대학교산학협력단 임피던스 조정 회로
US20240194447A1 (en) * 2022-12-07 2024-06-13 Applied Materials, Inc. Learning based tuning in a radio frequency plasma processing chamber
CN116087598B (zh) * 2023-04-07 2023-07-21 深圳市广能达半导体科技有限公司 射频匹配电压检测方法、检测装置、电子设备及存储介质

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Also Published As

Publication number Publication date
KR102092213B1 (ko) 2020-03-23
US10699881B2 (en) 2020-06-30
JP6780009B2 (ja) 2020-11-04
US20190108977A1 (en) 2019-04-11
TW201735739A (zh) 2017-10-01
KR20180124957A (ko) 2018-11-21
TWI606758B (zh) 2017-11-21
JP2019516273A (ja) 2019-06-13
WO2017161641A1 (zh) 2017-09-28
WO2017161641A9 (zh) 2018-09-27

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