SG11201806171XA - Positive-type photosensitive resin composition - Google Patents

Positive-type photosensitive resin composition

Info

Publication number
SG11201806171XA
SG11201806171XA SG11201806171XA SG11201806171XA SG11201806171XA SG 11201806171X A SG11201806171X A SG 11201806171XA SG 11201806171X A SG11201806171X A SG 11201806171XA SG 11201806171X A SG11201806171X A SG 11201806171XA SG 11201806171X A SG11201806171X A SG 11201806171XA
Authority
SG
Singapore
Prior art keywords
positive
resin composition
photosensitive resin
type photosensitive
type
Prior art date
Application number
SG11201806171XA
Other languages
English (en)
Inventor
Tadamitsu Nakamura
Original Assignee
Hitachi Chemical Dupont Microsystems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Dupont Microsystems Ltd filed Critical Hitachi Chemical Dupont Microsystems Ltd
Publication of SG11201806171XA publication Critical patent/SG11201806171XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG11201806171XA 2016-02-05 2016-02-05 Positive-type photosensitive resin composition SG11201806171XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/000617 WO2017134700A1 (fr) 2016-02-05 2016-02-05 Composition de résine photosensible de type positif

Publications (1)

Publication Number Publication Date
SG11201806171XA true SG11201806171XA (en) 2018-08-30

Family

ID=59500146

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201806171XA SG11201806171XA (en) 2016-02-05 2016-02-05 Positive-type photosensitive resin composition

Country Status (9)

Country Link
US (1) US11592743B2 (fr)
EP (1) EP3413131B1 (fr)
JP (1) JP6673369B2 (fr)
KR (1) KR20180101440A (fr)
CN (1) CN108604060B (fr)
PH (1) PH12018501572A1 (fr)
SG (1) SG11201806171XA (fr)
TW (1) TWI714717B (fr)
WO (1) WO2017134700A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604059B (zh) * 2016-02-05 2021-07-02 艾曲迪微系统股份有限公司 正型感光性树脂组合物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5434588B2 (ja) * 2007-03-12 2014-03-05 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
KR101175080B1 (ko) * 2007-12-26 2012-10-26 아사히 가세이 이-매터리얼즈 가부시키가이샤 내열성 수지 전구체 및 그것을 사용한 감광성 수지 조성물
JP5169446B2 (ja) 2008-04-28 2013-03-27 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、該樹脂組成物を用いたポリベンゾオキサゾール膜、パターン硬化膜の製造方法及び電子部品
KR101249568B1 (ko) * 2008-07-03 2013-04-01 아사히 가세이 이-매터리얼즈 가부시키가이샤 내열성 수지 전구체 및 그것을 사용한 감광성 수지 조성물
JP5515399B2 (ja) * 2009-05-12 2014-06-11 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、硬化膜、パターン硬化膜の製造方法及び電子部品
TWI437025B (zh) * 2009-08-14 2014-05-11 Asahi Kasei E Materials Corp An alkali-soluble polymer, a photosensitive resin composition comprising the same, and a use thereof
WO2011135887A1 (fr) * 2010-04-28 2011-11-03 旭化成イーマテリアルズ株式会社 Composition de résine photosensible
KR101910220B1 (ko) * 2011-06-15 2018-10-19 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 감광성 수지 조성물, 그 수지 조성물을 사용한 패턴 경화막의 제조 방법 및 전자 부품
JP2013205801A (ja) * 2012-03-29 2013-10-07 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びその硬化膜、保護膜、絶縁膜並びに半導体装置及び表示体装置
WO2014115233A1 (fr) 2013-01-28 2014-07-31 日立化成デュポンマイクロシステムズ株式会社 Composition de résine, procédé de fabrication de film durci avec motif, et élément semi-conducteur
CN108604059B (zh) * 2016-02-05 2021-07-02 艾曲迪微系统股份有限公司 正型感光性树脂组合物

Also Published As

Publication number Publication date
TWI714717B (zh) 2021-01-01
KR20180101440A (ko) 2018-09-12
US11592743B2 (en) 2023-02-28
JP6673369B2 (ja) 2020-03-25
US20190041748A1 (en) 2019-02-07
EP3413131A4 (fr) 2019-10-09
WO2017134700A1 (fr) 2017-08-10
PH12018501572B1 (en) 2019-04-15
EP3413131A1 (fr) 2018-12-12
CN108604060B (zh) 2021-06-25
PH12018501572A1 (en) 2019-04-15
CN108604060A (zh) 2018-09-28
TW201800843A (zh) 2018-01-01
JPWO2017134700A1 (ja) 2018-11-01
EP3413131B1 (fr) 2021-06-09

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