SG11201804073UA - Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device - Google Patents

Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device

Info

Publication number
SG11201804073UA
SG11201804073UA SG11201804073UA SG11201804073UA SG11201804073UA SG 11201804073U A SG11201804073U A SG 11201804073UA SG 11201804073U A SG11201804073U A SG 11201804073UA SG 11201804073U A SG11201804073U A SG 11201804073UA SG 11201804073U A SG11201804073U A SG 11201804073UA
Authority
SG
Singapore
Prior art keywords
semiconductor
manufacturing
film composition
semiconductor film
processing material
Prior art date
Application number
SG11201804073UA
Other languages
English (en)
Inventor
Yasuhisa Kayaba
Hirofumi Tanaka
Koji Inoue
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Publication of SG11201804073UA publication Critical patent/SG11201804073UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C08K5/092—Polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D177/00—Coating compositions based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D177/06—Polyamides derived from polyamines and polycarboxylic acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/42—Polyamides containing atoms other than carbon, hydrogen, oxygen, and nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/0246—Polyamines containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/028—Polyamidoamines
    • C08G73/0293—Quaternisation of polyamidoamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • C08L101/025—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing nitrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/02—Polyamides derived from omega-amino carboxylic acids or from lactams thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/02—Polyamines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/28—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Formation Of Insulating Films (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polyamides (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Physical Vapour Deposition (AREA)
SG11201804073UA 2015-11-16 2016-11-16 Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device SG11201804073UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015224196 2015-11-16
PCT/JP2016/084009 WO2017086361A1 (ja) 2015-11-16 2016-11-16 半導体用膜組成物、半導体用膜組成物の製造方法、半導体用部材の製造方法、半導体用工程材の製造方法及び半導体装置

Publications (1)

Publication Number Publication Date
SG11201804073UA true SG11201804073UA (en) 2018-06-28

Family

ID=58718898

Family Applications (3)

Application Number Title Priority Date Filing Date
SG11201804077PA SG11201804077PA (en) 2015-11-16 2016-11-16 Semiconductor film composition, method of manufacturing semiconductor film composition, method of manufacturing semiconductor member, method of manufacturing semiconductor processing material, and semiconductor device
SG11201804073UA SG11201804073UA (en) 2015-11-16 2016-11-16 Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device
SG10202108543VA SG10202108543VA (en) 2015-11-16 2016-11-16 Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor,

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201804077PA SG11201804077PA (en) 2015-11-16 2016-11-16 Semiconductor film composition, method of manufacturing semiconductor film composition, method of manufacturing semiconductor member, method of manufacturing semiconductor processing material, and semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202108543VA SG10202108543VA (en) 2015-11-16 2016-11-16 Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor,

Country Status (9)

Country Link
US (3) US10759964B2 (ko)
EP (2) EP3379564B1 (ko)
JP (3) JP6427690B2 (ko)
KR (3) KR102441117B1 (ko)
CN (3) CN108352320B (ko)
IL (2) IL259346B (ko)
SG (3) SG11201804077PA (ko)
TW (3) TWI764363B (ko)
WO (2) WO2017086360A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6427690B2 (ja) * 2015-11-16 2018-11-21 三井化学株式会社 半導体装置用の膜を生成するための組成物、半導体装置用の膜を生成するための組成物の製造方法、半導体用部材の製造方法、半導体用工程材の製造方法及び半導体装置
EP3616903B1 (en) * 2017-04-28 2023-09-27 Mitsui Chemicals, Inc. Substrate laminated body and method for manufacturing substrate laminated body
JP7070935B2 (ja) * 2017-11-17 2022-05-18 三井化学株式会社 半導体素子中間体、金属含有膜形成用組成物、半導体素子中間体の製造方法、半導体素子の製造方法
US11567408B2 (en) * 2019-10-15 2023-01-31 Rohm And Haas Electronic Materials Korea Ltd. Coating composition for use with an overcoated photoresist
KR20210133328A (ko) * 2020-04-27 2021-11-08 고려대학교 산학협력단 금속 산화물 박막의 캐리어 도핑 방법 및 이에 의해 제조된 반도체층을 포함하는 전자 소자
EP4195264A1 (en) * 2020-09-10 2023-06-14 Mitsui Chemicals, Inc. Composition, multilayer body and method for producing multilayer body
US20220093535A1 (en) * 2020-09-23 2022-03-24 Intel Corporation Electronic substrates having embedded inductors
WO2023032924A1 (ja) * 2021-09-06 2023-03-09 三井化学株式会社 半導体用の膜を形成するための組成物、積層体及び基板積層体
EP4391024A1 (en) * 2021-09-06 2024-06-26 Mitsui Chemicals, Inc. Composition for forming film for semiconductor, laminate, and substrate laminate

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933120B1 (ko) 1968-06-21 1974-09-04
JP2631878B2 (ja) * 1988-09-27 1997-07-16 宇部興産株式会社 ポリイミドシロキサン組成物および膜
EP0534304A1 (de) 1991-09-21 1993-03-31 Hoechst Aktiengesellschaft Cycloalkylierte Polyethyleniminderivate und ihre Verwendung als Hypolipidämika
JP3724004B2 (ja) * 1995-03-28 2005-12-07 東レ株式会社 熱硬化性組成物、その製造方法およびカラーフィルタ
US6329017B1 (en) * 1998-12-23 2001-12-11 Battelle Memorial Institute Mesoporous silica film from a solution containing a surfactant and methods of making same
JP2001213958A (ja) 2000-02-03 2001-08-07 Nippon Shokubai Co Ltd エチレンイミン重合体およびその製造方法
US6447845B1 (en) 2000-03-03 2002-09-10 Dow Corning Corporation Barrier coatings using polyacids
JP2001272503A (ja) * 2000-03-24 2001-10-05 Fuji Photo Film Co Ltd 親水化ハードコートフィルム及び透明積層フィルム
KR100343938B1 (en) * 2000-11-29 2002-07-20 Samsung Electronics Co Ltd Preparation method of interlayer insulation membrane of semiconductor
JP2003171486A (ja) * 2001-12-05 2003-06-20 Mitsubishi Polyester Film Copp 塗布フィルム
JP4915400B2 (ja) 2002-12-16 2012-04-11 宇部興産株式会社 電子部品の実装方法
FR2853903B1 (fr) 2003-04-16 2005-05-27 Saint Gobain Isover Composition d'encollage de fibres minerales renfermant un polyacide carboxylique et une polyamine, procede de preparation, et produits resultants
JP2008501825A (ja) * 2004-06-01 2008-01-24 ダウ コーニング コーポレーション ナノ及びマイクロリソグラフィー用の材料組成物
CN102621814A (zh) * 2005-04-19 2012-08-01 日产化学工业株式会社 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物
JP4753237B2 (ja) * 2005-07-25 2011-08-24 Ａｚエレクトロニックマテリアルズ株式会社 感光性樹脂組成物
TW200722479A (en) 2005-08-22 2007-06-16 Nippon Catalytic Chem Ind Halogenated polyamide acid composition and its applications
JP2007197660A (ja) * 2005-08-22 2007-08-09 Nippon Shokubai Co Ltd ハロゲン化ポリアミド酸組成物およびその応用
JP2008056897A (ja) * 2006-08-03 2008-03-13 Nippon Shokubai Co Ltd ポリアミド酸組成物およびその応用
US8481247B2 (en) 2006-08-28 2013-07-09 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing liquid additive
JP5498170B2 (ja) * 2007-12-26 2014-05-21 旭化成イーマテリアルズ株式会社 耐熱性樹脂前駆体及びそれを用いた感光性樹脂組成物
JP5351155B2 (ja) * 2008-06-09 2013-11-27 旭化成イーマテリアルズ株式会社 ポリアミド樹脂、感光性樹脂組成物、硬化レリーフパターンの形成方法及び半導体装置
CN102224577B (zh) 2009-05-29 2013-12-04 三井化学株式会社 半导体用密封组合物、半导体装置及半导体装置的制造方法
JP5648634B2 (ja) 2009-06-09 2015-01-07 三菱瓦斯化学株式会社 ポリアミド樹脂組成物及び成形品
EP2615635B1 (en) * 2010-09-10 2016-05-25 Mitsui Chemicals, Inc. Semiconductor device production method and rinse
MY168317A (en) * 2011-06-23 2018-10-30 Asahi Chemical Ind Layered product for fine pattern formation and method of manufacturing layered product for fine pattern formation
JP5968438B2 (ja) 2012-07-17 2016-08-10 三井化学株式会社 半導体装置及びその製造方法並びにリンス液
JP5870195B2 (ja) * 2012-08-21 2016-02-24 大日精化工業株式会社 水性液状組成物、水性塗工液、機能性塗工膜、及び複合材料
TWI615422B (zh) 2012-09-25 2018-02-21 Toray Industries 樹脂組成物、硬化膜、積層薄膜及半導體裝置之製造方法
JP6048106B2 (ja) * 2012-12-13 2016-12-21 Jnc株式会社 熱硬化性樹脂組成物
JP6276014B2 (ja) * 2012-12-21 2018-02-07 旭化成株式会社 微細パタン形成用積層体及び微細パタン形成用フィルムロール並びに微細パタン形成用積層体の搬送方法
JP2014143308A (ja) * 2013-01-24 2014-08-07 Hitachi Chemical Co Ltd 仮固定用組成物及び半導体装置の製造方法
KR101747582B1 (ko) 2013-03-27 2017-06-14 미쓰이 가가쿠 가부시키가이샤 복합체의 제조 방법 및 조성물
JP6391569B2 (ja) * 2013-06-07 2018-09-19 アドバンスト・ソフトマテリアルズ株式会社 ポリロタキサン、並びにオキシラン基及び／又はオキセタン基を２以上有する化合物を有する架橋用組成物
TWI495404B (zh) * 2013-06-21 2015-08-01 Chi Mei Corp 軟性基板用組成物及軟性基板
JP6427690B2 (ja) * 2015-11-16 2018-11-21 三井化学株式会社 半導体装置用の膜を生成するための組成物、半導体装置用の膜を生成するための組成物の製造方法、半導体用部材の製造方法、半導体用工程材の製造方法及び半導体装置

Also Published As

Publication number Publication date
JP2019068075A (ja) 2019-04-25
EP3379565A4 (en) 2019-06-26
TWI712652B (zh) 2020-12-11
WO2017086360A1 (ja) 2017-05-26
EP3379565B1 (en) 2020-10-14
JPWO2017086361A1 (ja) 2018-05-24
TWI764363B (zh) 2022-05-11
CN108352320B (zh) 2023-09-08
KR20180071300A (ko) 2018-06-27
US10759964B2 (en) 2020-09-01
CN108292604A (zh) 2018-07-17
JP6649458B2 (ja) 2020-02-19
US20180327547A1 (en) 2018-11-15
CN108352320A (zh) 2018-07-31
TW202112967A (zh) 2021-04-01
KR20190140101A (ko) 2019-12-18
IL259346A (en) 2018-07-31
IL259347B (en) 2020-06-30
US20180334588A1 (en) 2018-11-22
TW201738304A (zh) 2017-11-01
IL259347A (en) 2018-07-31
TWI712640B (zh) 2020-12-11
SG10202108543VA (en) 2021-09-29
KR102059759B1 (ko) 2019-12-26
JPWO2017086360A1 (ja) 2018-04-05
KR102441117B1 (ko) 2022-09-06
US10752805B2 (en) 2020-08-25
EP3379564A1 (en) 2018-09-26
SG11201804077PA (en) 2018-06-28
JP6437134B2 (ja) 2018-12-12
EP3379564B1 (en) 2020-10-14
JP6427690B2 (ja) 2018-11-21
CN108292604B (zh) 2023-02-21
TW201728686A (zh) 2017-08-16
CN117070147A (zh) 2023-11-17
IL259346B (en) 2020-06-30
KR20180069876A (ko) 2018-06-25
KR102075905B1 (ko) 2020-02-11
US20200347265A1 (en) 2020-11-05
EP3379565A1 (en) 2018-09-26
US11965109B2 (en) 2024-04-23
EP3379564A4 (en) 2019-07-31
WO2017086361A1 (ja) 2017-05-26

Similar Documents

Publication Publication Date Title
SG11201804073UA (en) Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device
EP4253597A3 (en) Compositions and methods using same for carbon doped silicon containing films
WO2019055393A8 (en) Compositions and methods for depositing silicon-containing films
SG10201801158QA (en) Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films
MY173184A (en) Tin hard mask and etch residue removal
TN2018000410A1 (en) New piperidinyl derivatives, a process for their preparation and pharmaceutical compositions containing them
TN2017000524A1 (en) New bicyclic derivatives, a process for their preparation and pharmaceutical compositions containing them
MY196413A (en) Substituted Carbonucleoside Derivatives Useful as Anticancer Agents
SG11201807157QA (en) Anticorrosion coating composition, anticorrosion coating film, substrate with anticorrosion coating film, and method of manufacturing same
CA2925568C (en) Polyisocyanate-based intumescent coating
MX2017011821A (es) Silanos y composiciones curables que contienen dichos silanos como reticulantes.
TW200632014A (en) Curing compositions for fluoropolymers
MY167604A (en) Coupling agent for rubber/carbon black, and rubber composition containing same for use in tires
WO2014166492A8 (en) Curing agent for tie-coat composition comprising an amino-silane adduct
MX2016010910A (es) Una composicion plastificante que comprende di (2-etilhexil) tereftalato.
NZ724990A (en) Pharmaceutically active dimers linked through phenolic hydroxyl groups
BR112015010051A2 (pt) composição, artigo, filme e método para preparar um filme
BR112016024139A2 (pt) método para a provisão de uma superfície metálica ou concreta de uma instalação química com um revestimento, instalação química, e composição de revestimento adequada para a provisão de uma superfície metálica ou concreta de uma instalação química com um revestimento
SA518400688B1 (ar) منتجات كيميائية للاستخدامات اللاصقة
BR112015021501A2 (pt) composição farmacêutica, composição farmacêutica espumável, processo para fabricação de uma composição farmacêutica para administração retal, lata de aerossol para uma composição farmacêutica, uso de uma composição farmacêutica e método para tratar ou manter a remissão de infecções causadas por clostridium difficile
SG10201903201XA (en) Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films
MX2018000762A (es) Composiciones curables de benzoxazina.
SG11201810158SA (en) Composition for forming metal-containing film, method of producing composition for forming metal-containing film, semiconductor device, and method of producing semiconductor device
BR112017002191A2 (pt) adesivo de uretano
WO2015158859A3 (de) Vernetzungskatalysator mit polyether-struktureinheiten