SG11201801039VA - Method for forming pzt ferroelectric film - Google Patents
Method for forming pzt ferroelectric filmInfo
- Publication number
- SG11201801039VA SG11201801039VA SG11201801039VA SG11201801039VA SG11201801039VA SG 11201801039V A SG11201801039V A SG 11201801039VA SG 11201801039V A SG11201801039V A SG 11201801039VA SG 11201801039V A SG11201801039V A SG 11201801039VA SG 11201801039V A SG11201801039V A SG 11201801039VA
- Authority
- SG
- Singapore
- Prior art keywords
- ferroelectric film
- pzt ferroelectric
- forming pzt
- forming
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/857—Macromolecular compositions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Semiconductor Integrated Circuits (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015168480 | 2015-08-28 | ||
| PCT/JP2016/074959 WO2017038676A1 (fr) | 2015-08-28 | 2016-08-26 | Procédé de formation d'un film ferroélectrique de pzt |
| JP2016165368A JP6887770B2 (ja) | 2015-08-28 | 2016-08-26 | Ｐｚｔ強誘電体膜の形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201801039VA true SG11201801039VA (en) | 2018-03-28 |
Family
ID=58210112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201801039VA SG11201801039VA (en) | 2015-08-28 | 2016-08-26 | Method for forming pzt ferroelectric film |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10431731B2 (fr) |
| EP (1) | EP3343654B1 (fr) |
| JP (1) | JP6887770B2 (fr) |
| KR (1) | KR20180044851A (fr) |
| CN (1) | CN108352443B (fr) |
| SG (1) | SG11201801039VA (fr) |
| TW (1) | TWI709532B (fr) |
| WO (1) | WO2017038676A1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107267983B (zh) * | 2017-06-26 | 2018-12-25 | 重庆正峰电子有限公司 | 一种pzt陶瓷涂层的制备方法 |
| JP6932268B2 (ja) | 2018-08-30 | 2021-09-08 | 富士フイルム株式会社 | 圧電デバイスおよび圧電デバイスの製造方法 |
| CN111434386B (zh) * | 2019-01-15 | 2021-07-02 | 研能科技股份有限公司 | 微流体致动器的制造方法 |
| TW202112670A (zh) * | 2019-05-31 | 2021-04-01 | 日商三菱綜合材料股份有限公司 | 壓電體膜之製造方法、壓電體膜及壓電元件 |
| CN112062553B (zh) * | 2020-09-17 | 2022-09-06 | 广西大学 | 一种超宽温区负电卡效应Pb(ZrxTi1-x)O3基薄膜的制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3265677B2 (ja) * | 1993-02-12 | 2002-03-11 | 松下電器産業株式会社 | 強誘電体薄膜の形成方法 |
| EP1153888A4 (fr) * | 1998-11-27 | 2006-03-29 | Rohm Co Ltd | Production de substance solide a base de compose inorganique et fabrication de semi-conducteur |
| US6198225B1 (en) * | 1999-06-07 | 2001-03-06 | Symetrix Corporation | Ferroelectric flat panel displays |
| WO2002073680A2 (fr) | 2001-03-09 | 2002-09-19 | Symetrix Corporation | Procede de fabrication de structure heterarchique stratifiee comportant un film superieur ultrafin |
| PT104751A (pt) * | 2009-09-18 | 2011-03-18 | Univ Aveiro | Método para a preparação a baixas temperaturas de filmes finos ferroeléctricos, os filmes finos ferroeléctricos assim obtidos e suas aplicações |
| JP5461951B2 (ja) * | 2009-10-16 | 2014-04-02 | 独立行政法人科学技術振興機構 | セラミックス膜の製造方法 |
| JP2014036082A (ja) * | 2012-08-08 | 2014-02-24 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP5929654B2 (ja) * | 2012-09-11 | 2016-06-08 | 三菱マテリアル株式会社 | 強誘電体薄膜形成用組成物及びその薄膜の形成方法 |
| JP6075145B2 (ja) * | 2013-03-25 | 2017-02-08 | 三菱マテリアル株式会社 | Ｐｚｔ系強誘電体薄膜形成用組成物の製造方法並びに該組成物を用いたｐｚｔ系強誘電体薄膜の形成方法 |
| JP6075152B2 (ja) * | 2013-03-27 | 2017-02-08 | 三菱マテリアル株式会社 | Ｐｚｔ系強誘電体薄膜形成用組成物の製造方法並びに該組成物を用いたｐｚｔ系強誘電体薄膜の形成方法 |
| US10537966B2 (en) | 2015-03-04 | 2020-01-21 | Technology Research Association For Future Additive Manufacturing | Processing nozzle, processing head, machining apparatus, and control method and control program of processing nozzle |
-
2016
- 2016-08-26 CN CN201680049774.0A patent/CN108352443B/zh active Active
- 2016-08-26 JP JP2016165368A patent/JP6887770B2/ja active Active
- 2016-08-26 WO PCT/JP2016/074959 patent/WO2017038676A1/fr active Application Filing
- 2016-08-26 KR KR1020177035771A patent/KR20180044851A/ko not_active Application Discontinuation
- 2016-08-26 SG SG11201801039VA patent/SG11201801039VA/en unknown
- 2016-08-26 EP EP16841708.7A patent/EP3343654B1/fr active Active
- 2016-08-26 US US15/755,282 patent/US10431731B2/en active Active
- 2016-08-29 TW TW105127699A patent/TWI709532B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3343654A1 (fr) | 2018-07-04 |
| CN108352443A (zh) | 2018-07-31 |
| KR20180044851A (ko) | 2018-05-03 |
| JP2017045992A (ja) | 2017-03-02 |
| CN108352443B (zh) | 2021-11-05 |
| EP3343654A4 (fr) | 2019-04-10 |
| EP3343654B1 (fr) | 2020-04-15 |
| JP6887770B2 (ja) | 2021-06-16 |
| WO2017038676A1 (fr) | 2017-03-09 |
| US10431731B2 (en) | 2019-10-01 |
| TW201726553A (zh) | 2017-08-01 |
| TWI709532B (zh) | 2020-11-11 |
| US20180248109A1 (en) | 2018-08-30 |
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