SG11201706317QA - Positive photosensitive siloxane composition, active matrix substrate, display device, and method for producing active matrix substrate - Google Patents
Positive photosensitive siloxane composition, active matrix substrate, display device, and method for producing active matrix substrateInfo
- Publication number
- SG11201706317QA SG11201706317QA SG11201706317QA SG11201706317QA SG11201706317QA SG 11201706317Q A SG11201706317Q A SG 11201706317QA SG 11201706317Q A SG11201706317Q A SG 11201706317QA SG 11201706317Q A SG11201706317Q A SG 11201706317QA SG 11201706317Q A SG11201706317Q A SG 11201706317QA
- Authority
- SG
- Singapore
- Prior art keywords
- active matrix
- matrix substrate
- display device
- positive photosensitive
- siloxane composition
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title 2
- 239000000758 substrate Substances 0.000 title 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/08—Polyhydrazides; Polytriazoles; Polyaminotriazoles; Polyoxadiazoles
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Materials For Photolithography (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015020399 | 2015-02-04 | ||
PCT/JP2016/053261 WO2016125836A1 (en) | 2015-02-04 | 2016-02-03 | Positive photosensitive siloxane composition, active matrix substrate, display device, and method for producing active matrix substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201706317QA true SG11201706317QA (en) | 2017-09-28 |
Family
ID=56564175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201706317QA SG11201706317QA (en) | 2015-02-04 | 2016-02-03 | Positive photosensitive siloxane composition, active matrix substrate, display device, and method for producing active matrix substrate |
Country Status (8)
Country | Link |
---|---|
US (1) | US10620538B2 (en) |
EP (1) | EP3255494A4 (en) |
JP (1) | JP6487947B2 (en) |
KR (1) | KR102615352B1 (en) |
CN (1) | CN107209456A (en) |
SG (1) | SG11201706317QA (en) |
TW (1) | TWI698713B (en) |
WO (1) | WO2016125836A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7033259B2 (en) * | 2016-11-28 | 2022-03-10 | 国立大学法人 奈良先端科学技術大学院大学 | Thin film transistor substrate provided with a protective film and its manufacturing method |
CN110476255B (en) * | 2017-03-29 | 2023-09-19 | 夏普株式会社 | Semiconductor device and method for manufacturing semiconductor device |
JP2019061166A (en) * | 2017-09-27 | 2019-04-18 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Positive photosensitive siloxane composition and cured film containing the same |
US11467494B2 (en) | 2019-03-15 | 2022-10-11 | Merck Patent Gmbh | Positive type photosensitive polysiloxane composition |
JP6639724B1 (en) * | 2019-03-15 | 2020-02-05 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Positive photosensitive polysiloxane composition |
WO2020187685A1 (en) * | 2019-03-15 | 2020-09-24 | Merck Patent Gmbh | Positive type photosensitive polysiloxane composition |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01241873A (en) * | 1988-03-24 | 1989-09-26 | Seiko Epson Corp | Josephson field effect transistor and manufacture thereof |
JP3229419B2 (en) | 1993-02-10 | 2001-11-19 | ダウ・コ−ニング・コ−ポレ−ション | Method for forming silicon oxide film |
US5380555A (en) | 1993-02-09 | 1995-01-10 | Dow Corning Toray Silicone Co., Ltd. | Methods for the formation of a silicon oxide film |
JP2001098224A (en) | 1999-09-28 | 2001-04-10 | Hitachi Chem Co Ltd | Silica-based film, method of forming silica-based film, and electronic component having silica-based film |
US6984476B2 (en) * | 2002-04-15 | 2006-01-10 | Sharp Kabushiki Kaisha | Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device |
JP5077237B2 (en) * | 2006-09-25 | 2012-11-21 | 日立化成工業株式会社 | Radiation-sensitive composition, method for forming silica-based coating, silica-based coating, apparatus and member provided with silica-based coating, and photosensitive agent for insulating film |
JP5099140B2 (en) * | 2007-08-24 | 2012-12-12 | 東レ株式会社 | Photosensitive composition, cured film formed therefrom, and device having cured film |
JP2009186677A (en) * | 2008-02-05 | 2009-08-20 | Hitachi Chem Co Ltd | Photosensitive resin composition, method of forming silica coating film, and device and member provided with silica coating film |
JP4916461B2 (en) | 2008-02-18 | 2012-04-11 | シャープ株式会社 | Active matrix substrate and display device including the same |
JP2010117696A (en) * | 2008-10-17 | 2010-05-27 | Hitachi Chem Co Ltd | Photosensitive resin composition, method for forming silica-based film, and device and member including silica-based film |
US20130023086A1 (en) | 2009-12-21 | 2013-01-24 | Sharp Kabushiki Kaisha | Active matrix substrate, display panel provided with same, and method for manufacturing active matrix substrate |
WO2011104791A1 (en) | 2010-02-25 | 2011-09-01 | シャープ株式会社 | Thin film transistor substrate, manufacturing method therefor, and display device |
JP2011181462A (en) * | 2010-03-03 | 2011-09-15 | Hitachi Displays Ltd | Method of manufacturing display panel |
JP5707407B2 (en) * | 2010-08-24 | 2015-04-30 | メルクパフォーマンスマテリアルズIp合同会社 | Positive photosensitive siloxane composition |
JP5698070B2 (en) * | 2011-05-11 | 2015-04-08 | 株式会社Adeka | Positive photosensitive composition and cured product thereof |
JP5726632B2 (en) * | 2011-05-19 | 2015-06-03 | メルクパフォーマンスマテリアルズIp合同会社 | Photosensitive siloxane resin composition |
KR101902164B1 (en) * | 2011-05-20 | 2018-10-01 | 메르크 파텐트 게엠베하 | Positive photosensitive siloxane composition |
JP6013150B2 (en) * | 2012-11-22 | 2016-10-25 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | Method for producing positive photosensitive siloxane composition |
JP6086739B2 (en) * | 2013-01-21 | 2017-03-01 | 東京応化工業株式会社 | Insulating film forming composition, insulating film manufacturing method, and insulating film |
JP6065665B2 (en) * | 2013-03-11 | 2017-01-25 | Jsr株式会社 | Radiation sensitive resin composition, cured film, light emitting display element, and method for forming light emitting layer |
US9740068B2 (en) | 2013-04-05 | 2017-08-22 | Sakai Display Products Corporation | Active matrix circuit, method of manufacturing active matrix circuit and image display apparatus |
KR20150068899A (en) * | 2013-12-12 | 2015-06-22 | 제이엔씨 주식회사 | Positive photosensitive compositions |
-
2016
- 2016-02-03 US US15/546,596 patent/US10620538B2/en active Active
- 2016-02-03 WO PCT/JP2016/053261 patent/WO2016125836A1/en active Application Filing
- 2016-02-03 CN CN201680007695.3A patent/CN107209456A/en active Pending
- 2016-02-03 SG SG11201706317QA patent/SG11201706317QA/en unknown
- 2016-02-03 EP EP16746667.1A patent/EP3255494A4/en active Pending
- 2016-02-03 KR KR1020177024753A patent/KR102615352B1/en active IP Right Grant
- 2016-02-03 JP JP2016573406A patent/JP6487947B2/en active Active
- 2016-02-04 TW TW105103763A patent/TWI698713B/en active
Also Published As
Publication number | Publication date |
---|---|
EP3255494A4 (en) | 2018-10-10 |
TWI698713B (en) | 2020-07-11 |
KR20170110138A (en) | 2017-10-10 |
KR102615352B1 (en) | 2023-12-20 |
US20180017869A1 (en) | 2018-01-18 |
TW201629631A (en) | 2016-08-16 |
US10620538B2 (en) | 2020-04-14 |
JPWO2016125836A1 (en) | 2018-01-18 |
EP3255494A1 (en) | 2017-12-13 |
JP6487947B2 (en) | 2019-03-20 |
CN107209456A (en) | 2017-09-26 |
WO2016125836A1 (en) | 2016-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3240029A4 (en) | Display substrate, manufacturing method and display device thereof | |
HK1221819A1 (en) | Substrate-holding apparatus, exposure apparatus, and device manufacturing method | |
EP3171214A4 (en) | Array substrate, preparation method therefor, and display device | |
EP3168891A4 (en) | Oled display device and manufacturing method thereof, display device and evaporation-deposition mask plate | |
EP3001451A4 (en) | Substrate holding method, substrate holding apparatus, exposure method, and exposure apparatus | |
EP3151278A4 (en) | Array substrate and manufacturing method therefor, and display device | |
EP3214651A4 (en) | Display substrate, display device thereof, and manufacturing method therefor | |
EP3153957A4 (en) | Array substrate and manufacturing method therefor, and display device | |
HK1248832A1 (en) | Exposure device, method for manufacturing flat panel display, device manufacturing method, and exposure method | |
SG11201706317QA (en) | Positive photosensitive siloxane composition, active matrix substrate, display device, and method for producing active matrix substrate | |
EP3223311A4 (en) | Substrate and manufacturing method thereof, and display device | |
EP3214486A4 (en) | Coa substrate and manufacturing method thereof, and display device | |
EP3121804A4 (en) | Pixel structure, display substrate and display device | |
EP3179529A4 (en) | Oled display device and manufacturing method thereof, and display apparatus | |
EP3255673A4 (en) | Display substrate and manufacturing method thereof, and display device | |
EP3203519A4 (en) | Array substrate, mask plate and display device | |
EP3396443A4 (en) | Colour film substrate and manufacturing method therefor, and display device | |
HK1249192A1 (en) | Exposure device, flat-panel display manufacturing method, and device manufacturing method | |
EP3188249A4 (en) | Thin film transistor, manufacturing method therefor, display substrate and display device | |
EP3257036A4 (en) | Display substrate, fabrication method and display apparatus | |
EP3327763A4 (en) | Method for manufacturing array substrate, array substrate, and display device | |
EP3444845A4 (en) | Method for manufacturing display substrate, display substrate, and display device | |
EP3242157A4 (en) | Colour film substrate, preparation method therefor and display device | |
HK1246869A1 (en) | Object holding device, exposure device, method for manufacturing flat panel display, and method for manufacturing device | |
TWI560508B (en) | Thin film transistor and operating method thereof |