SG11201705789RA - Memory device and method for operating thereof - Google Patents
Memory device and method for operating thereofInfo
- Publication number
- SG11201705789RA SG11201705789RA SG11201705789RA SG11201705789RA SG11201705789RA SG 11201705789R A SG11201705789R A SG 11201705789RA SG 11201705789R A SG11201705789R A SG 11201705789RA SG 11201705789R A SG11201705789R A SG 11201705789RA SG 11201705789R A SG11201705789R A SG 11201705789RA
- Authority
- SG
- Singapore
- Prior art keywords
- operating
- memory device
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG10201500289W | 2015-01-15 | ||
| PCT/SG2015/050520 WO2016114718A1 (fr) | 2015-01-15 | 2015-12-31 | Dispositif de mémoire et son procédé de fonctionnement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201705789RA true SG11201705789RA (en) | 2017-08-30 |
Family
ID=56406139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201705789RA SG11201705789RA (en) | 2015-01-15 | 2015-12-31 | Memory device and method for operating thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20180005678A1 (fr) |
| SG (1) | SG11201705789RA (fr) |
| WO (1) | WO2016114718A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016110049A1 (de) * | 2016-05-31 | 2017-11-30 | Infineon Technologies Ag | Ermitteln eines Zustands einer Speicherzelle |
| US9792984B1 (en) | 2016-10-27 | 2017-10-17 | Arm Ltd. | Method, system and device for non-volatile memory device operation |
| US9997239B1 (en) * | 2017-05-02 | 2018-06-12 | Everspin Technologies, Inc. | Word line overdrive in memory and method therefor |
| US10354710B2 (en) | 2017-07-24 | 2019-07-16 | Sandisk Technologies Llc | Magnetoelectric random access memory array and methods of operating the same |
| CN114171083A (zh) | 2020-11-03 | 2022-03-11 | 台湾积体电路制造股份有限公司 | 存储器器件 |
| US11823724B2 (en) * | 2021-10-26 | 2023-11-21 | International Business Machines Corporation | Magneto-electric low power analogue magnetic tunnel junction memory |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0154193B1 (ko) * | 1994-12-30 | 1998-12-01 | 김주용 | 센스 앰프회로 |
| JP4046513B2 (ja) * | 2002-01-30 | 2008-02-13 | 株式会社ルネサステクノロジ | 半導体集積回路 |
| TW556223B (en) * | 2002-04-11 | 2003-10-01 | Ememory Technology Inc | Memory using two-stage sensing amplifier with additional load unit |
| KR100484255B1 (ko) * | 2002-10-31 | 2005-04-22 | 주식회사 하이닉스반도체 | 감지증폭기의 동작시 노이즈가 감소된 반도체 메모리 장치 |
| US6898104B2 (en) * | 2002-11-12 | 2005-05-24 | Kabushiki Kaisha Toshiba | Semiconductor device having semiconductor memory with sense amplifier |
| US7916520B2 (en) * | 2004-08-25 | 2011-03-29 | Nec Corporation | Memory cell and magnetic random access memory |
| US7646628B2 (en) * | 2005-02-09 | 2010-01-12 | Nec Corporation | Toggle magnetic random access memory and write method of toggle magnetic random access memory |
| JPWO2007099874A1 (ja) * | 2006-02-27 | 2009-07-16 | 日本電気株式会社 | 磁気抵抗素子及び磁気ランダムアクセスメモリ |
| US7345912B2 (en) * | 2006-06-01 | 2008-03-18 | Grandis, Inc. | Method and system for providing a magnetic memory structure utilizing spin transfer |
| WO2008007416A1 (fr) * | 2006-07-10 | 2008-01-17 | Panasonic Corporation | Circuit de mesure de courant ou de tension, circuit de détection, mémoire non volatile à semiconducteur et amplificateur différentiel |
| TWI415124B (zh) * | 2007-08-09 | 2013-11-11 | Ind Tech Res Inst | 磁性隨機存取記憶體 |
| JP5190499B2 (ja) * | 2010-09-17 | 2013-04-24 | 株式会社東芝 | 半導体記憶装置 |
| JP5811693B2 (ja) * | 2011-08-25 | 2015-11-11 | ソニー株式会社 | 抵抗変化型メモリデバイスおよびその駆動方法 |
| CN102487124B (zh) * | 2011-09-19 | 2014-07-23 | 中国科学院物理研究所 | 纳米多层膜、场效应管、传感器、随机存储器及制备方法 |
| KR20140023806A (ko) * | 2012-08-17 | 2014-02-27 | 삼성전자주식회사 | 자기 저항 메모리 장치의 배치 구조 |
| US9165629B2 (en) * | 2013-03-12 | 2015-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for MRAM sense reference trimming |
| US9171590B2 (en) * | 2014-03-26 | 2015-10-27 | National Tsing Hua University | Sensing marging expanding scheme for memory |
-
2015
- 2015-12-31 SG SG11201705789RA patent/SG11201705789RA/en unknown
- 2015-12-31 WO PCT/SG2015/050520 patent/WO2016114718A1/fr active Application Filing
- 2015-12-31 US US15/543,976 patent/US20180005678A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20180005678A1 (en) | 2018-01-04 |
| WO2016114718A1 (fr) | 2016-07-21 |
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