SG11201705343XA - Device and method for detecting overlay error - Google Patents

Device and method for detecting overlay error

Info

Publication number
SG11201705343XA
SG11201705343XA SG11201705343XA SG11201705343XA SG11201705343XA SG 11201705343X A SG11201705343X A SG 11201705343XA SG 11201705343X A SG11201705343X A SG 11201705343XA SG 11201705343X A SG11201705343X A SG 11201705343XA SG 11201705343X A SG11201705343X A SG 11201705343XA
Authority
SG
Singapore
Prior art keywords
overlay error
detecting overlay
detecting
error
overlay
Prior art date
Application number
SG11201705343XA
Other languages
English (en)
Inventor
Bofang Peng
Hailiang Lu
Fan Wang
Original Assignee
Shanghai Micro Electronics Equipment (Group) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment (Group) Co Ltd filed Critical Shanghai Micro Electronics Equipment (Group) Co Ltd
Publication of SG11201705343XA publication Critical patent/SG11201705343XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201705343XA 2014-12-31 2016-02-05 Device and method for detecting overlay error SG11201705343XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410855716.XA CN105807573B (zh) 2014-12-31 2014-12-31 用于套刻误差检测的装置和方法
PCT/CN2016/073630 WO2016107614A1 (zh) 2014-12-31 2016-02-05 用于套刻误差检测的装置和方法

Publications (1)

Publication Number Publication Date
SG11201705343XA true SG11201705343XA (en) 2017-08-30

Family

ID=56284322

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201705343XA SG11201705343XA (en) 2014-12-31 2016-02-05 Device and method for detecting overlay error

Country Status (7)

Country Link
US (1) US10268125B2 (ko)
JP (1) JP6473508B2 (ko)
KR (1) KR101966572B1 (ko)
CN (1) CN105807573B (ko)
SG (1) SG11201705343XA (ko)
TW (1) TWI582376B (ko)
WO (1) WO2016107614A1 (ko)

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CN106198568B (zh) * 2015-05-24 2019-03-12 上海微电子装备（集团）股份有限公司 一种具有透明基底的薄膜的测量装置及测量方法
TWI649635B (zh) * 2017-01-24 2019-02-01 台灣積體電路製造股份有限公司 層疊誤差測量裝置及方法
CN108345177B (zh) * 2017-01-24 2020-06-30 台湾积体电路制造股份有限公司 层迭误差测量装置及方法
EP3528047A1 (en) * 2018-02-14 2019-08-21 ASML Netherlands B.V. Method and apparatus for measuring a parameter of interest using image plane detection techniques
KR102120551B1 (ko) 2018-09-14 2020-06-09 (주)오로스 테크놀로지 오버레이 측정장치
CN112147851B (zh) * 2019-06-28 2022-03-11 上海微电子装备（集团）股份有限公司 光刻设备及光刻设备的瞳面透过率的检测方法
KR102273278B1 (ko) * 2019-09-10 2021-07-07 (주)오로스 테크놀로지 오버레이 측정장치
CN111025854B (zh) * 2019-12-23 2021-05-14 中国科学院长春光学精密机械与物理研究所 一种混和式投影物镜、投影曝光设备及成像系统
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US20230314344A1 (en) * 2022-03-30 2023-10-05 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology

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JPH03257303A (ja) * 1990-03-08 1991-11-15 Nec Corp 重ね合せ精度測定方法
JPH09189520A (ja) * 1996-01-12 1997-07-22 Nikon Corp 位置検出装置
TWI227814B (en) * 2002-09-20 2005-02-11 Asml Netherlands Bv Alignment system and methods for lithographic systems using at least two wavelengths
JP2005140743A (ja) 2003-11-10 2005-06-02 Nippon Sheet Glass Co Ltd 加工手段の性能評価方法及びこれを用いた加工性能評価システム
CN100468213C (zh) 2006-10-18 2009-03-11 上海微电子装备有限公司 用于光刻装置的对准系统及其级结合光栅系统
CN101435997B (zh) 2007-11-15 2012-06-27 上海华虹Nec电子有限公司 光刻套刻精度的测试图形及测量方法
US8537461B2 (en) * 2007-11-26 2013-09-17 Carl Zeiss Microimaging Gmbh Method and configuration for the optical detection of an illuminated specimen
NL1036245A1 (nl) * 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036857A1 (nl) * 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP2010271186A (ja) * 2009-05-21 2010-12-02 Nikon Corp 欠陥検査装置
JP2010271188A (ja) 2009-05-21 2010-12-02 Denso Corp センサ較正装置及びセンサ較正方法
KR101976152B1 (ko) * 2011-02-10 2019-05-09 케이엘에이-텐코 코포레이션 오버레이 계측의 콘트라스트 증강을 위한 구조화 조명
JP5713961B2 (ja) * 2011-06-21 2015-05-07 キヤノン株式会社 位置検出装置、インプリント装置及び位置検出方法
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CN103777467B (zh) * 2012-10-19 2016-07-06 上海微电子装备有限公司 一种套刻误差测量装置及方法
CN103076724B (zh) 2013-02-01 2014-10-29 中国科学院光电研究院 基于双光束干涉的投影物镜波像差在线检测装置和方法
CN103969960B (zh) * 2013-02-04 2016-07-06 上海微电子装备有限公司 一种套刻测量的装置和方法
WO2015009739A1 (en) * 2013-07-18 2015-01-22 Kla-Tencor Corporation Illumination configurations for scatterometry measurements

Also Published As

Publication number Publication date
US20170351184A1 (en) 2017-12-07
TW201625899A (zh) 2016-07-16
KR101966572B1 (ko) 2019-08-13
CN105807573B (zh) 2017-12-29
JP6473508B2 (ja) 2019-02-20
JP2018502299A (ja) 2018-01-25
CN105807573A (zh) 2016-07-27
KR20170108015A (ko) 2017-09-26
TWI582376B (zh) 2017-05-11
US10268125B2 (en) 2019-04-23
WO2016107614A1 (zh) 2016-07-07

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