SG11201705228PA - Impedance matching method and device for pulsed radio frequency power supply - Google Patents

Impedance matching method and device for pulsed radio frequency power supply

Info

Publication number
SG11201705228PA
SG11201705228PA SG11201705228PA SG11201705228PA SG11201705228PA SG 11201705228P A SG11201705228P A SG 11201705228PA SG 11201705228P A SG11201705228P A SG 11201705228PA SG 11201705228P A SG11201705228P A SG 11201705228PA SG 11201705228P A SG11201705228P A SG 11201705228PA
Authority
SG
Singapore
Prior art keywords
power supply
radio frequency
frequency power
impedance matching
matching method
Prior art date
Application number
SG11201705228PA
Other languages
English (en)
Inventor
Xiaoyang Cheng
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201705228PA publication Critical patent/SG11201705228PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
SG11201705228PA 2015-01-06 2015-04-29 Impedance matching method and device for pulsed radio frequency power supply SG11201705228PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510004040.8A CN105826154B (zh) 2015-01-06 2015-01-06 针对脉冲射频电源的阻抗匹配方法及装置
PCT/CN2015/077779 WO2016110027A1 (zh) 2015-01-06 2015-04-29 针对脉冲射频电源的阻抗匹配方法及装置

Publications (1)

Publication Number Publication Date
SG11201705228PA true SG11201705228PA (en) 2017-07-28

Family

ID=56355453

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201705228PA SG11201705228PA (en) 2015-01-06 2015-04-29 Impedance matching method and device for pulsed radio frequency power supply

Country Status (6)

Country Link
US (1) US10643822B2 (zh)
JP (1) JP6619818B2 (zh)
KR (1) KR101902427B1 (zh)
CN (1) CN105826154B (zh)
SG (1) SG11201705228PA (zh)
WO (1) WO2016110027A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6780009B2 (ja) * 2016-03-23 2020-11-04 北京北方華創微電子装備有限公司Ｂｅｉｊｉｎｇ Ｎａｕｒａ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．， Ｌｔｄ． インピーダンス整合システム、インピーダンス整合方法および半導体処理装置
JP6157036B1 (ja) * 2016-07-08 2017-07-05 株式会社京三製作所 高周波電源装置、及び高周波電源装置の制御方法
CN109148250B (zh) * 2017-06-15 2020-07-17 北京北方华创微电子装备有限公司 阻抗匹配装置和阻抗匹配方法
JP6855989B2 (ja) * 2017-09-14 2021-04-07 オムロン株式会社 Ｒｆタグ回路
US10679825B2 (en) * 2017-11-15 2020-06-09 Lam Research Corporation Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate
US10269540B1 (en) * 2018-01-25 2019-04-23 Advanced Energy Industries, Inc. Impedance matching system and method of operating the same
CN110416047B (zh) * 2018-04-27 2021-03-02 北京北方华创微电子装备有限公司 射频阻抗匹配的方法及装置、半导体处理设备
JP6842443B2 (ja) 2018-06-22 2021-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマを生成する方法
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
CN111293021B (zh) * 2018-12-07 2024-01-12 中微半导体设备(上海)股份有限公司 脉冲射频等离子体的阻抗匹配方法和装置
CN111293022B (zh) * 2018-12-07 2023-01-24 中微半导体设备(上海)股份有限公司 脉冲射频等离子体的阻抗匹配方法和装置
CN111341636B (zh) * 2018-12-19 2023-07-11 北京北方华创微电子装备有限公司 一种半导体设备及其射频加载方法
TWI715921B (zh) * 2019-01-28 2021-01-11 美商先驅能源工業公司 阻抗匹配系統及其操作方法
KR102348338B1 (ko) * 2019-02-07 2022-01-06 엠케이에스코리아 유한회사 펄스형 가변 주파수 rf 발생기의 구동 주파수 제어 방법
JP7253415B2 (ja) * 2019-03-22 2023-04-06 株式会社ダイヘン インピーダンス整合装置及びインピーダンス整合方法
US11107661B2 (en) * 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology
JP2021108413A (ja) * 2019-12-27 2021-07-29 株式会社ダイヘン インピーダンス調整装置及びインピーダンス調整方法
US11626853B2 (en) 2021-02-05 2023-04-11 Applied Materials, Inc. RF power delivery architecture with switchable match and frequency tuning

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US5815047A (en) 1993-10-29 1998-09-29 Applied Materials, Inc. Fast transition RF impedance matching network for plasma reactor ignition
JPH09260096A (ja) * 1996-03-15 1997-10-03 Hitachi Ltd インピーダンス整合方法および装置ならびに半導体製造装置
KR100677012B1 (ko) * 1997-09-17 2007-01-31 동경 엘렉트론 주식회사 전기 임피던스 매칭 시스템 및 방법
CN100562209C (zh) * 2004-02-09 2009-11-18 周星工程股份有限公司 用于产生等离子的电源供应器及包括其的等离子设备
WO2005116293A1 (ja) * 2004-05-28 2005-12-08 Konica Minolta Holdings, Inc. 薄膜形成装置及び薄膜形成方法
JP2006139949A (ja) * 2004-11-10 2006-06-01 Sumihide Ikenouchi インピーダンス整合器及びこれを用いたプラズマ処理装置
CN100377624C (zh) * 2005-12-07 2008-03-26 北京北方微电子基地设备工艺研究中心有限责任公司 一种刻蚀设备的射频起辉控制方法
JP2008202990A (ja) * 2007-02-16 2008-09-04 Shimadzu Corp Ｉｃｐ用高周波電源装置
CN101783281B (zh) * 2009-01-15 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置及栅极的刻蚀方法
CN101964295B (zh) * 2009-07-24 2013-04-24 北京北方微电子基地设备工艺研究中心有限责任公司 一种阻抗匹配方法及等离子体处理设备
TWI455172B (zh) 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
JP6045118B2 (ja) * 2012-03-06 2016-12-14 株式会社日立国際電気 高周波電源装置およびその整合方法
JP5547763B2 (ja) 2012-03-16 2014-07-16 三井造船株式会社 プラズマ生成方法、この方法を用いた薄膜形成方法及びプラズマ生成装置
JP2015062468A (ja) 2013-09-24 2015-04-09 株式会社島津製作所 放射線撮影装置

Also Published As

Publication number Publication date
KR20170103901A (ko) 2017-09-13
JP6619818B2 (ja) 2019-12-11
JP2018504864A (ja) 2018-02-15
US20170345621A1 (en) 2017-11-30
WO2016110027A1 (zh) 2016-07-14
CN105826154B (zh) 2017-12-19
US10643822B2 (en) 2020-05-05
KR101902427B1 (ko) 2018-09-28
CN105826154A (zh) 2016-08-03

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