SG11201704051SA - Target assembly - Google Patents

Target assembly

Info

Publication number
SG11201704051SA
SG11201704051SA SG11201704051SA SG11201704051SA SG11201704051SA SG 11201704051S A SG11201704051S A SG 11201704051SA SG 11201704051S A SG11201704051S A SG 11201704051SA SG 11201704051S A SG11201704051S A SG 11201704051SA SG 11201704051S A SG11201704051S A SG 11201704051SA
Authority
SG
Singapore
Prior art keywords
target assembly
target
assembly
Prior art date
Application number
SG11201704051SA
Other languages
English (en)
Inventor
Shinya Nakamura
Yoshihiro Ikeda
Yuusuke Miyaguchi
Kazuyoshi Hashimoto
Kengo Tsutsumi
Yoshinori Fujii
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of SG11201704051SA publication Critical patent/SG11201704051SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG11201704051SA 2014-12-03 2015-06-16 Target assembly SG11201704051SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014244802 2014-12-03
PCT/JP2015/003004 WO2016088284A1 (ja) 2014-12-03 2015-06-16 ターゲットアッセンブリ

Publications (1)

Publication Number Publication Date
SG11201704051SA true SG11201704051SA (en) 2017-06-29

Family

ID=56091255

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201704051SA SG11201704051SA (en) 2014-12-03 2015-06-16 Target assembly

Country Status (7)

Country Link
US (1) US10435783B2 (zh)
JP (1) JP6359118B2 (zh)
KR (1) KR101977819B1 (zh)
CN (1) CN107002229B (zh)
SG (1) SG11201704051SA (zh)
TW (1) TWI641710B (zh)
WO (1) WO2016088284A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108578913B (zh) * 2018-04-20 2021-01-01 上海联影医疗科技股份有限公司 一种x射线靶组件及放疗设备
TWI788618B (zh) * 2019-01-25 2023-01-01 美商應用材料股份有限公司 物理氣相沉積靶材組件
CN116940705B (zh) * 2021-07-16 2024-03-08 株式会社爱发科 成膜方法和成膜装置
DE102022000936A1 (de) * 2022-03-17 2023-09-21 Singulus Technologies Aktiengesellschaft Beschichtungsmodul mit verbesserter Kathodenanordnung
JP7510457B2 (ja) 2022-04-06 2024-07-03 株式会社アルバック プラズマ処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010107B2 (ja) 1981-05-25 1985-03-15 日本真空技術株式会社 Ｒｆスパツタリングにおける絶縁物タ−ゲツト用カソ−ド
JPS60197873A (ja) * 1984-03-19 1985-10-07 Ulvac Corp スパツタリング装置における絶縁物タ−ゲツト用ア−スシ−ルド装置
TW332222B (en) 1990-10-31 1998-05-21 Materials Res Corporation Sputtering apparatus with isolated coolant and sputtering target therefor the invention relates to a replaceable sputtering target device comprising a round target unit, a recessed rim having an annular rim, an annular rim rear face, tension members and annular waterproof surface.
US6689254B1 (en) * 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
EP0824760A1 (en) * 1995-05-11 1998-02-25 Materials Research Corporation Sputtering apparatus with isolated coolant and sputtering target therefor
JP4215232B2 (ja) * 2002-02-01 2009-01-28 キヤノンアネルバ株式会社 マグネトロンカソード及びそれを用いたスパッタリング装置
AU2003284294A1 (en) 2002-10-21 2004-05-13 Cabot Corporation Method of forming a sputtering target assembly and assembly made therefrom
KR100972812B1 (ko) * 2004-03-24 2010-07-28 어플라이드 머티어리얼스, 인코포레이티드 선택가능한 듀얼 포지션 마그네트론
CN201068469Y (zh) * 2007-05-15 2008-06-04 北京京东方光电科技有限公司 可延长靶材使用寿命的平面磁控溅射靶
JP5414340B2 (ja) * 2009-04-24 2014-02-12 株式会社アルバック スパッタリング方法
JP5265811B2 (ja) 2010-06-03 2013-08-14 株式会社アルバック スパッタ成膜装置
JP5708472B2 (ja) * 2011-12-21 2015-04-30 住友金属鉱山株式会社 マグネトロンスパッタリングカソード及びこれを備えたスパッタリング装置
US9249500B2 (en) 2013-02-07 2016-02-02 Applied Materials, Inc. PVD RF DC open/closed loop selectable magnetron

Also Published As

Publication number Publication date
TWI641710B (zh) 2018-11-21
TW201621072A (zh) 2016-06-16
JP6359118B2 (ja) 2018-07-18
US10435783B2 (en) 2019-10-08
JPWO2016088284A1 (ja) 2017-08-10
CN107002229B (zh) 2019-05-07
CN107002229A (zh) 2017-08-01
US20170268097A1 (en) 2017-09-21
WO2016088284A1 (ja) 2016-06-09
KR20170089918A (ko) 2017-08-04
KR101977819B1 (ko) 2019-05-13

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