SG11201703585RA - Analyzing and utilizing landscapes - Google Patents
Analyzing and utilizing landscapesInfo
- Publication number
- SG11201703585RA SG11201703585RA SG11201703585RA SG11201703585RA SG11201703585RA SG 11201703585R A SG11201703585R A SG 11201703585RA SG 11201703585R A SG11201703585R A SG 11201703585RA SG 11201703585R A SG11201703585R A SG 11201703585RA SG 11201703585R A SG11201703585R A SG 11201703585RA
- Authority
- SG
- Singapore
- Prior art keywords
- landscapes
- analyzing
- utilizing
- utilizing landscapes
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462083891P | 2014-11-25 | 2014-11-25 | |
US201562100384P | 2015-01-06 | 2015-01-06 | |
PCT/US2015/062523 WO2016086056A1 (en) | 2014-11-25 | 2015-11-24 | Analyzing and utilizing landscapes |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201703585RA true SG11201703585RA (en) | 2017-06-29 |
Family
ID=56075006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201703585RA SG11201703585RA (en) | 2014-11-25 | 2015-11-24 | Analyzing and utilizing landscapes |
Country Status (8)
Country | Link |
---|---|
US (1) | US10831108B2 (ko) |
JP (3) | JP6770958B2 (ko) |
KR (1) | KR102269514B1 (ko) |
CN (2) | CN112698551B (ko) |
IL (1) | IL251972B (ko) |
SG (1) | SG11201703585RA (ko) |
TW (2) | TWI719804B (ko) |
WO (1) | WO2016086056A1 (ko) |
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KR20170092522A (ko) | 2014-09-08 | 2017-08-11 | 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 | 금속 격자 및 이의 측정 방법 |
CN107111250B (zh) | 2014-11-26 | 2019-10-11 | Asml荷兰有限公司 | 度量方法、计算机产品和系统 |
WO2016187468A1 (en) | 2015-05-19 | 2016-11-24 | Kla-Tencor Corporation | Topographic phase control for overlay measurement |
US9995689B2 (en) * | 2015-05-22 | 2018-06-12 | Nanometrics Incorporated | Optical metrology using differential fitting |
IL256196B (en) | 2015-06-17 | 2022-07-01 | Asml Netherlands Bv | Prescription selection based on inter-prescription composition |
EP3387371B1 (en) | 2015-12-08 | 2023-04-19 | KLA-Tencor Corporation | Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination |
CN113376973A (zh) | 2015-12-17 | 2021-09-10 | Asml荷兰有限公司 | 量测设备的调节或基于已测量目标的特性而由量测设备进行的测量 |
CN108701625B (zh) | 2016-02-24 | 2023-07-14 | 科磊股份有限公司 | 光学计量的准确度提升 |
WO2017146785A1 (en) | 2016-02-25 | 2017-08-31 | Kla-Tencor Corporation | Analyzing root causes of process variation in scatterometry metrology |
JP6703612B2 (ja) | 2016-02-26 | 2020-06-03 | エーエスエムエル ネザーランズ ビー.ブイ. | 構造を測定する方法、検査装置、リソグラフィシステム、およびデバイス製造方法 |
KR102238466B1 (ko) | 2016-04-22 | 2021-04-09 | 에이에스엠엘 네델란즈 비.브이. | 스택 차이의 결정 및 스택 차이를 사용한 정정 기술 |
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CN109478023B (zh) * | 2016-07-15 | 2021-09-10 | Asml荷兰有限公司 | 用于量测目标场的设计的方法和设备 |
WO2018033342A1 (en) * | 2016-08-17 | 2018-02-22 | Asml Netherlands B.V. | Substrate measurement recipe design of, or for, a target including a latent image |
KR102265164B1 (ko) * | 2016-09-27 | 2021-06-15 | 에이에스엠엘 네델란즈 비.브이. | 계측 레시피 선택 |
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KR102271217B1 (ko) | 2016-11-14 | 2021-06-30 | 케이엘에이 코포레이션 | 향상된 기능성들을 갖는 통합된 계측 툴들을 구비한 리소그래피 시스템 |
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KR102327116B1 (ko) * | 2017-08-30 | 2021-11-16 | 케이엘에이 코포레이션 | 프로세스 변동에 따른 계측 측정 파라미터들의 신속한 조정 |
US10699969B2 (en) | 2017-08-30 | 2020-06-30 | Kla-Tencor Corporation | Quick adjustment of metrology measurement parameters according to process variation |
KR102390687B1 (ko) | 2017-09-11 | 2022-04-26 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 프로세스들에서의 계측 |
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2015
- 2015-11-24 SG SG11201703585RA patent/SG11201703585RA/en unknown
- 2015-11-24 JP JP2017528095A patent/JP6770958B2/ja active Active
- 2015-11-24 CN CN202011580664.1A patent/CN112698551B/zh active Active
- 2015-11-24 WO PCT/US2015/062523 patent/WO2016086056A1/en active Application Filing
- 2015-11-24 KR KR1020177017380A patent/KR102269514B1/ko active IP Right Grant
- 2015-11-24 CN CN201580060081.7A patent/CN107078074B/zh active Active
- 2015-11-25 TW TW109101242A patent/TWI719804B/zh active
- 2015-11-25 TW TW104139220A patent/TWI711096B/zh active
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2016
- 2016-06-30 US US15/198,902 patent/US10831108B2/en active Active
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2017
- 2017-04-27 IL IL251972A patent/IL251972B/en unknown
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2020
- 2020-09-28 JP JP2020162494A patent/JP7023337B2/ja active Active
-
2022
- 2022-02-08 JP JP2022018205A patent/JP2022065040A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2016086056A1 (en) | 2016-06-02 |
KR20170088403A (ko) | 2017-08-01 |
CN107078074A (zh) | 2017-08-18 |
TW201633419A (zh) | 2016-09-16 |
JP2022065040A (ja) | 2022-04-26 |
TWI711096B (zh) | 2020-11-21 |
JP2017537317A (ja) | 2017-12-14 |
IL251972B (en) | 2022-03-01 |
KR102269514B1 (ko) | 2021-06-25 |
US20160313658A1 (en) | 2016-10-27 |
TWI719804B (zh) | 2021-02-21 |
IL251972A0 (en) | 2017-06-29 |
JP2020201293A (ja) | 2020-12-17 |
TW202018836A (zh) | 2020-05-16 |
CN112698551A (zh) | 2021-04-23 |
CN107078074B (zh) | 2021-05-25 |
US10831108B2 (en) | 2020-11-10 |
JP6770958B2 (ja) | 2020-10-21 |
JP7023337B2 (ja) | 2022-02-21 |
CN112698551B (zh) | 2024-04-23 |
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