SG11201703060UA - Memory cell and non-volatile semiconductor storage device - Google Patents
Memory cell and non-volatile semiconductor storage deviceInfo
- Publication number
- SG11201703060UA SG11201703060UA SG11201703060UA SG11201703060UA SG11201703060UA SG 11201703060U A SG11201703060U A SG 11201703060UA SG 11201703060U A SG11201703060U A SG 11201703060UA SG 11201703060U A SG11201703060U A SG 11201703060UA SG 11201703060U A SG11201703060U A SG 11201703060UA
- Authority
- SG
- Singapore
- Prior art keywords
- storage device
- memory cell
- semiconductor storage
- volatile semiconductor
- volatile
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014211095A JP5934324B2 (en) | 2014-10-15 | 2014-10-15 | Memory cell and nonvolatile semiconductor memory device |
PCT/JP2015/078333 WO2016060011A1 (en) | 2014-10-15 | 2015-10-06 | Memory cell and non-volatile semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201703060UA true SG11201703060UA (en) | 2017-05-30 |
Family
ID=55746558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201703060UA SG11201703060UA (en) | 2014-10-15 | 2015-10-06 | Memory cell and non-volatile semiconductor storage device |
Country Status (9)
Country | Link |
---|---|
US (1) | US10038101B2 (en) |
EP (1) | EP3232465B1 (en) |
JP (1) | JP5934324B2 (en) |
KR (1) | KR102346468B1 (en) |
CN (1) | CN106796887B (en) |
IL (1) | IL251710B (en) |
SG (1) | SG11201703060UA (en) |
TW (1) | TWI612523B (en) |
WO (1) | WO2016060011A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6783447B2 (en) * | 2016-04-20 | 2020-11-11 | 株式会社フローディア | Data writing method for non-volatile semiconductor storage device |
CN106887432B (en) * | 2017-03-10 | 2019-08-30 | 上海华力微电子有限公司 | A method of it improving SONOS device and reads electric current |
TWI733626B (en) * | 2020-07-07 | 2021-07-11 | 旺宏電子股份有限公司 | Operation method for memory device |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4923318B2 (en) * | 1999-12-17 | 2012-04-25 | ソニー株式会社 | Nonvolatile semiconductor memory device and operation method thereof |
JP4058232B2 (en) * | 2000-11-29 | 2008-03-05 | 株式会社ルネサステクノロジ | Semiconductor device and IC card |
US20040129986A1 (en) | 2002-11-28 | 2004-07-08 | Renesas Technology Corp. | Nonvolatile semiconductor memory device and manufacturing method thereof |
JP2005142354A (en) * | 2003-11-06 | 2005-06-02 | Matsushita Electric Ind Co Ltd | Non-volatile semiconductor storage device, its driving method, and manufacturing method |
KR100598107B1 (en) * | 2004-09-21 | 2006-07-07 | 삼성전자주식회사 | Non-volatile memory devices and methods for forming the same |
US7829938B2 (en) * | 2005-07-14 | 2010-11-09 | Micron Technology, Inc. | High density NAND non-volatile memory device |
JP2007234861A (en) * | 2006-03-01 | 2007-09-13 | Renesas Technology Corp | Method of manufacturing semiconductor device |
JP2008021666A (en) * | 2006-07-10 | 2008-01-31 | Renesas Technology Corp | Nonvolatile semiconductor storage, and manufacturing method thereof |
US7476588B2 (en) * | 2007-01-12 | 2009-01-13 | Micron Technology, Inc. | Methods of forming NAND cell units with string gates of various widths |
JP2009054707A (en) | 2007-08-24 | 2009-03-12 | Renesas Technology Corp | Semiconductor storage device, and manufacturing method thereof |
JP2010028314A (en) * | 2008-07-16 | 2010-02-04 | Seiko Epson Corp | Image processing apparatus, method, and program |
JP2010278314A (en) * | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | Semiconductor device and method of manufacturing the same |
JP5429305B2 (en) * | 2009-11-26 | 2014-02-26 | 富士通セミコンダクター株式会社 | Nonvolatile semiconductor memory device and erase method thereof |
JP2011129816A (en) * | 2009-12-21 | 2011-06-30 | Renesas Electronics Corp | Semiconductor device |
JP5524632B2 (en) | 2010-01-18 | 2014-06-18 | ルネサスエレクトロニクス株式会社 | Semiconductor memory device |
JP5538024B2 (en) * | 2010-03-29 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | Nonvolatile semiconductor memory device |
WO2013075067A1 (en) * | 2011-11-18 | 2013-05-23 | Aplus Flash Technology, Inc. | Low voltage page buffer for use in nonvolatile memory design |
JP2014103204A (en) * | 2012-11-19 | 2014-06-05 | Renesas Electronics Corp | Semiconductor device manufacturing method and semiconductor device |
KR101979299B1 (en) * | 2012-12-26 | 2019-09-03 | 에스케이하이닉스 주식회사 | Nonvolatile memory device and method of fabricating the same |
CN105051903B (en) * | 2013-03-15 | 2018-04-20 | 密克罗奇普技术公司 | Eeprom memory unit with low-voltage read path and high voltage erasing/write paths |
US8945997B2 (en) * | 2013-06-27 | 2015-02-03 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same |
-
2014
- 2014-10-15 JP JP2014211095A patent/JP5934324B2/en active Active
-
2015
- 2015-10-06 US US15/515,199 patent/US10038101B2/en active Active
- 2015-10-06 KR KR1020177012609A patent/KR102346468B1/en active IP Right Grant
- 2015-10-06 WO PCT/JP2015/078333 patent/WO2016060011A1/en active Application Filing
- 2015-10-06 EP EP15851362.2A patent/EP3232465B1/en active Active
- 2015-10-06 CN CN201580054928.0A patent/CN106796887B/en active Active
- 2015-10-06 SG SG11201703060UA patent/SG11201703060UA/en unknown
- 2015-10-15 TW TW104133904A patent/TWI612523B/en active
-
2017
- 2017-04-12 IL IL251710A patent/IL251710B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP3232465A4 (en) | 2018-05-16 |
IL251710B (en) | 2020-07-30 |
CN106796887A (en) | 2017-05-31 |
EP3232465A1 (en) | 2017-10-18 |
JP5934324B2 (en) | 2016-06-15 |
US20170222036A1 (en) | 2017-08-03 |
JP2016082038A (en) | 2016-05-16 |
WO2016060011A1 (en) | 2016-04-21 |
TWI612523B (en) | 2018-01-21 |
IL251710A0 (en) | 2017-06-29 |
CN106796887B (en) | 2020-09-08 |
EP3232465B1 (en) | 2024-05-08 |
TW201621908A (en) | 2016-06-16 |
US10038101B2 (en) | 2018-07-31 |
KR20170069256A (en) | 2017-06-20 |
KR102346468B1 (en) | 2021-12-31 |
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