SG11201606466YA - Pattern formation method, etching method, electronic devicemanufacturing method, and electronic device - Google Patents

Pattern formation method, etching method, electronic devicemanufacturing method, and electronic device

Info

Publication number
SG11201606466YA
SG11201606466YA SG11201606466YA SG11201606466YA SG11201606466YA SG 11201606466Y A SG11201606466Y A SG 11201606466YA SG 11201606466Y A SG11201606466Y A SG 11201606466YA SG 11201606466Y A SG11201606466Y A SG 11201606466YA SG 11201606466Y A SG11201606466Y A SG 11201606466YA
Authority
SG
Singapore
Prior art keywords
electronic
devicemanufacturing
pattern formation
electronic device
etching
Prior art date
Application number
SG11201606466YA
Inventor
Ryosuke Ueba
Naoya Iguchi
Tsukasa Yamanaka
Naohiro Tango
Michihiro Shirakawa
Keita Kato
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of SG11201606466YA publication Critical patent/SG11201606466YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
SG11201606466YA 2014-02-17 2015-02-04 Pattern formation method, etching method, electronic devicemanufacturing method, and electronic device SG11201606466YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014027793 2014-02-17
JP2014257489A JP6296972B2 (en) 2014-02-17 2014-12-19 PATTERN FORMING METHOD, ETCHING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
PCT/JP2015/053058 WO2015122326A1 (en) 2014-02-17 2015-02-04 Pattern forming method, etching method, method for manufacturing electronic device, and electronic device

Publications (1)

Publication Number Publication Date
SG11201606466YA true SG11201606466YA (en) 2016-09-29

Family

ID=53800073

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606466YA SG11201606466YA (en) 2014-02-17 2015-02-04 Pattern formation method, etching method, electronic devicemanufacturing method, and electronic device

Country Status (7)

Country Link
US (1) US9810981B2 (en)
JP (1) JP6296972B2 (en)
KR (1) KR101692807B1 (en)
CN (1) CN105980936A (en)
SG (1) SG11201606466YA (en)
TW (1) TWI627505B (en)
WO (1) WO2015122326A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6347197B2 (en) * 2014-10-02 2018-06-27 Jsr株式会社 Resist pattern refinement composition and pattern formation method
WO2017169569A1 (en) * 2016-03-30 2017-10-05 富士フイルム株式会社 Protective film forming composition, method for manufacturing protective film forming composition, method for forming pattern, and method for manufacturing electronic device
KR102088653B1 (en) 2016-04-28 2020-03-13 후지필름 가부시키가이샤 Treatment liquid and treatment liquid receptor
JP2018109701A (en) 2017-01-04 2018-07-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Chemically amplified positive type photoresist composition and pattern forming method using the same
KR102656746B1 (en) * 2017-02-03 2024-04-11 도오꾜오까고오교 가부시끼가이샤 Resist composition and method of forming resist pattern
US11705351B2 (en) 2017-12-01 2023-07-18 Elemental Scientific, Inc. Systems for integrated decomposition and scanning of a semiconducting wafer

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JPS5595324A (en) * 1978-12-30 1980-07-19 Fujitsu Ltd Manufacturing method of semiconductor device
US5215861A (en) 1992-03-17 1993-06-01 International Business Machines Corporation Thermographic reversible photoresist
US5877076A (en) * 1997-10-14 1999-03-02 Industrial Technology Research Institute Opposed two-layered photoresist process for dual damascene patterning
JP4184209B2 (en) * 2003-09-18 2008-11-19 東京応化工業株式会社 Positive resist composition and resist pattern forming method
KR100852380B1 (en) * 2004-06-30 2008-08-14 도오꾜오까고오교 가부시끼가이샤 Method of forming plated product using negative photoresist composition and photosensitive composition used therein
US7579137B2 (en) 2005-12-24 2009-08-25 International Business Machines Corporation Method for fabricating dual damascene structures
WO2008140119A1 (en) * 2007-05-15 2008-11-20 Fujifilm Corporation Method for pattern formation
JP5093004B2 (en) * 2008-09-02 2012-12-05 Ｊｓｒ株式会社 Pattern formation method
JP4671065B2 (en) * 2008-09-05 2011-04-13 信越化学工業株式会社 Double pattern formation method
JP2011033884A (en) * 2009-08-03 2011-02-17 Jsr Corp Resist pattern coating agent and resist pattern forming method
JP5112500B2 (en) * 2010-11-18 2013-01-09 株式会社東芝 Pattern formation method
WO2012157433A1 (en) * 2011-05-18 2012-11-22 Jsr株式会社 Method of forming double pattern
JP5707359B2 (en) * 2011-05-30 2015-04-30 富士フイルム株式会社 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for producing electronic device, and electronic device
JP5990367B2 (en) * 2011-06-17 2016-09-14 富士フイルム株式会社 Pattern forming method and electronic device manufacturing method using the same
JP5298217B2 (en) * 2011-06-29 2013-09-25 富士フイルム株式会社 Pattern forming method, electronic device manufacturing method using the same, and electronic device
JP5965733B2 (en) * 2012-06-12 2016-08-10 富士フイルム株式会社 Pattern forming method and electronic device manufacturing method
JP5948187B2 (en) * 2012-08-30 2016-07-06 富士フイルム株式会社 PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SAME
JP6127989B2 (en) * 2013-02-14 2017-05-17 信越化学工業株式会社 Pattern formation method
JP6097652B2 (en) * 2013-07-31 2017-03-15 富士フイルム株式会社 PATTERN FORMING METHOD, PATTERN, ETCHING METHOD USING THEM, AND ELECTRONIC DEVICE MANUFACTURING METHOD

Also Published As

Publication number Publication date
KR20160098517A (en) 2016-08-18
TW201533539A (en) 2015-09-01
US20160342083A1 (en) 2016-11-24
CN105980936A (en) 2016-09-28
JP6296972B2 (en) 2018-03-20
TWI627505B (en) 2018-06-21
KR101692807B1 (en) 2017-01-05
JP2015166848A (en) 2015-09-24
WO2015122326A1 (en) 2015-08-20
US9810981B2 (en) 2017-11-07

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