SG11201606466YA - Pattern formation method, etching method, electronic devicemanufacturing method, and electronic device - Google Patents
Pattern formation method, etching method, electronic devicemanufacturing method, and electronic deviceInfo
- Publication number
- SG11201606466YA SG11201606466YA SG11201606466YA SG11201606466YA SG11201606466YA SG 11201606466Y A SG11201606466Y A SG 11201606466YA SG 11201606466Y A SG11201606466Y A SG 11201606466YA SG 11201606466Y A SG11201606466Y A SG 11201606466YA SG 11201606466Y A SG11201606466Y A SG 11201606466YA
- Authority
- SG
- Singapore
- Prior art keywords
- electronic
- devicemanufacturing
- pattern formation
- electronic device
- etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title 3
- 238000005530 etching Methods 0.000 title 1
- 230000007261 regionalization Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014027793 | 2014-02-17 | ||
JP2014257489A JP6296972B2 (en) | 2014-02-17 | 2014-12-19 | PATTERN FORMING METHOD, ETCHING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD |
PCT/JP2015/053058 WO2015122326A1 (en) | 2014-02-17 | 2015-02-04 | Pattern forming method, etching method, method for manufacturing electronic device, and electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201606466YA true SG11201606466YA (en) | 2016-09-29 |
Family
ID=53800073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201606466YA SG11201606466YA (en) | 2014-02-17 | 2015-02-04 | Pattern formation method, etching method, electronic devicemanufacturing method, and electronic device |
Country Status (7)
Country | Link |
---|---|
US (1) | US9810981B2 (en) |
JP (1) | JP6296972B2 (en) |
KR (1) | KR101692807B1 (en) |
CN (1) | CN105980936A (en) |
SG (1) | SG11201606466YA (en) |
TW (1) | TWI627505B (en) |
WO (1) | WO2015122326A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6347197B2 (en) * | 2014-10-02 | 2018-06-27 | Jsr株式会社 | Resist pattern refinement composition and pattern formation method |
KR102129277B1 (en) * | 2016-03-30 | 2020-07-02 | 후지필름 가부시키가이샤 | Composition for forming a protective film, method for producing a composition for forming a protective film, method for forming a pattern, and method for producing an electronic device |
CN109075035B (en) * | 2016-04-28 | 2023-06-13 | 富士胶片株式会社 | Treatment liquid and treatment liquid container |
JP2018109701A (en) | 2017-01-04 | 2018-07-12 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Chemically amplified positive type photoresist composition and pattern forming method using the same |
KR102656746B1 (en) * | 2017-02-03 | 2024-04-11 | 도오꾜오까고오교 가부시끼가이샤 | Resist composition and method of forming resist pattern |
US11244841B2 (en) | 2017-12-01 | 2022-02-08 | Elemental Scientific, Inc. | Systems for integrated decomposition and scanning of a semiconducting wafer |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595324A (en) * | 1978-12-30 | 1980-07-19 | Fujitsu Ltd | Manufacturing method of semiconductor device |
US5215861A (en) | 1992-03-17 | 1993-06-01 | International Business Machines Corporation | Thermographic reversible photoresist |
US5877076A (en) * | 1997-10-14 | 1999-03-02 | Industrial Technology Research Institute | Opposed two-layered photoresist process for dual damascene patterning |
JP4184209B2 (en) * | 2003-09-18 | 2008-11-19 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
KR100852380B1 (en) * | 2004-06-30 | 2008-08-14 | 도오꾜오까고오교 가부시끼가이샤 | Method of forming plated product using negative photoresist composition and photosensitive composition used therein |
US7579137B2 (en) | 2005-12-24 | 2009-08-25 | International Business Machines Corporation | Method for fabricating dual damascene structures |
KR100989567B1 (en) * | 2007-05-15 | 2010-10-25 | 후지필름 가부시키가이샤 | Method for pattern formation |
JP5093004B2 (en) * | 2008-09-02 | 2012-12-05 | Jsr株式会社 | Pattern formation method |
JP4671065B2 (en) * | 2008-09-05 | 2011-04-13 | 信越化学工業株式会社 | Double pattern formation method |
JP2011033884A (en) * | 2009-08-03 | 2011-02-17 | Jsr Corp | Resist pattern coating agent and resist pattern forming method |
JP5112500B2 (en) * | 2010-11-18 | 2013-01-09 | 株式会社東芝 | Pattern formation method |
KR101881184B1 (en) | 2011-05-18 | 2018-07-23 | 제이에스알 가부시끼가이샤 | Method of forming double pattern |
JP5707359B2 (en) * | 2011-05-30 | 2015-04-30 | 富士フイルム株式会社 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for producing electronic device, and electronic device |
JP5990367B2 (en) * | 2011-06-17 | 2016-09-14 | 富士フイルム株式会社 | Pattern forming method and electronic device manufacturing method using the same |
JP5298217B2 (en) * | 2011-06-29 | 2013-09-25 | 富士フイルム株式会社 | Pattern forming method, electronic device manufacturing method using the same, and electronic device |
JP5965733B2 (en) * | 2012-06-12 | 2016-08-10 | 富士フイルム株式会社 | Pattern forming method and electronic device manufacturing method |
JP5948187B2 (en) * | 2012-08-30 | 2016-07-06 | 富士フイルム株式会社 | PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SAME |
JP6127989B2 (en) * | 2013-02-14 | 2017-05-17 | 信越化学工業株式会社 | Pattern formation method |
JP6097652B2 (en) * | 2013-07-31 | 2017-03-15 | 富士フイルム株式会社 | PATTERN FORMING METHOD, PATTERN, ETCHING METHOD USING THEM, AND ELECTRONIC DEVICE MANUFACTURING METHOD |
-
2014
- 2014-12-19 JP JP2014257489A patent/JP6296972B2/en active Active
-
2015
- 2015-02-04 CN CN201580007419.2A patent/CN105980936A/en active Pending
- 2015-02-04 KR KR1020167021234A patent/KR101692807B1/en active IP Right Grant
- 2015-02-04 SG SG11201606466YA patent/SG11201606466YA/en unknown
- 2015-02-04 WO PCT/JP2015/053058 patent/WO2015122326A1/en active Application Filing
- 2015-02-11 TW TW104104488A patent/TWI627505B/en active
-
2016
- 2016-08-05 US US15/229,247 patent/US9810981B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI627505B (en) | 2018-06-21 |
KR101692807B1 (en) | 2017-01-05 |
TW201533539A (en) | 2015-09-01 |
JP6296972B2 (en) | 2018-03-20 |
WO2015122326A1 (en) | 2015-08-20 |
US20160342083A1 (en) | 2016-11-24 |
JP2015166848A (en) | 2015-09-24 |
US9810981B2 (en) | 2017-11-07 |
CN105980936A (en) | 2016-09-28 |
KR20160098517A (en) | 2016-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201610659YA (en) | Etching Method | |
SG10201510372PA (en) | Etching Method And Etching Apparatus | |
SG10201604315QA (en) | Etching Method | |
PL3109056T5 (en) | Method and device for producing a structure on a surface | |
EP3217254A4 (en) | Electronic device and operation method thereof | |
SG11201913310RA (en) | Etching method and etching device | |
GB201400741D0 (en) | Electronic lock apparatus, method and system | |
SG11201609273UA (en) | Electronic device and method | |
HK1257067A1 (en) | Pattern rendering device and pattern rendering method | |
TWI562217B (en) | Method of forming pattern for integrated circuit and method of patterning substrate | |
IL242211A0 (en) | Pattern forming method, method for manufacturing electronic device, and electronic device | |
SG11201606466YA (en) | Pattern formation method, etching method, electronic devicemanufacturing method, and electronic device | |
SG10201610489WA (en) | Etching method | |
HK1219357A1 (en) | Electronic apparatus and manufacturing method therefor | |
EP3176868A4 (en) | Electronic device and electronic device manufacturing method | |
EP2953161A4 (en) | Secondary-battery-equipped circuit chip and manufacturing method therefor | |
HK1254829B (en) | Device manufacturing method | |
GB2549643B (en) | Methods and systems for configuring electronic devices | |
SG10201604313XA (en) | Etching Method | |
HK1243772A1 (en) | Pattern drawing device and pattern drawing method | |
EP2950333A4 (en) | Plasma etching method, plasma etching method, plasma processing method, and plasma processing device | |
EP2991023A4 (en) | Electronic shopping method and device | |
EP3118878A4 (en) | Electronic device and manufacturing method therefor | |
EP3236667A4 (en) | Electronic device and method | |
IL257070B (en) | Semiconductor integrated circuit device production method, and semiconductor integrated circuit device |