SG11201606376WA - Transition metal dichalcogenide semiconductor assemblies - Google Patents

Transition metal dichalcogenide semiconductor assemblies

Info

Publication number
SG11201606376WA
SG11201606376WA SG11201606376WA SG11201606376WA SG11201606376WA SG 11201606376W A SG11201606376W A SG 11201606376WA SG 11201606376W A SG11201606376W A SG 11201606376WA SG 11201606376W A SG11201606376W A SG 11201606376WA SG 11201606376W A SG11201606376W A SG 11201606376WA
Authority
SG
Singapore
Prior art keywords
transition metal
metal dichalcogenide
semiconductor assemblies
dichalcogenide semiconductor
assemblies
Prior art date
Application number
SG11201606376WA
Other languages
English (en)
Inventor
Marko Radosavljevic
Brian S Doyle
Ravi Pillarisetty
Niloy Mukherjee
Sansaptak Dasgupta
Han Wui Then
Robert S Chau
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of SG11201606376WA publication Critical patent/SG11201606376WA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8256—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using technologies not covered by one of groups H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252 and H01L21/8254
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG11201606376WA 2014-03-21 2014-03-21 Transition metal dichalcogenide semiconductor assemblies SG11201606376WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/031496 WO2015142358A1 (en) 2014-03-21 2014-03-21 Transition metal dichalcogenide semiconductor assemblies

Publications (1)

Publication Number Publication Date
SG11201606376WA true SG11201606376WA (en) 2016-09-29

Family

ID=54145117

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606376WA SG11201606376WA (en) 2014-03-21 2014-03-21 Transition metal dichalcogenide semiconductor assemblies

Country Status (7)

Country Link
US (1) US9748371B2 (zh)
EP (1) EP3120384B1 (zh)
KR (1) KR102132806B1 (zh)
CN (1) CN106030807B (zh)
SG (1) SG11201606376WA (zh)
TW (1) TWI577011B (zh)
WO (1) WO2015142358A1 (zh)

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KR102216542B1 (ko) * 2014-05-21 2021-02-17 삼성전자주식회사 2차원 물질을 이용한 수평형 다이오드를 포함하는 전자소자 제조방법
EP3186836B1 (en) * 2014-08-28 2019-04-17 Konica Minolta Laboratory U.S.A., Inc. Two dimensional layered material quantum well junction devices
US9768254B2 (en) * 2015-07-30 2017-09-19 International Business Machines Corporation Leakage-free implantation-free ETSOI transistors
JP6589552B2 (ja) * 2015-10-22 2019-10-16 富士通株式会社 電子デバイス及び電子デバイスの製造方法
WO2017111869A1 (en) 2015-12-24 2017-06-29 Intel Corporation Transition metal dichalcogenides (tmdcs) over iii-nitride heteroepitaxial layers
US11335556B2 (en) 2016-06-03 2022-05-17 Ohio University Directed growth of electrically self-contacted monolayer transition metal dichalcogenides with lithographically defined metallic patterns
EP3255656B1 (en) 2016-06-07 2020-08-26 IMEC vzw A method for forming a vertical hetero-stack and a device including a vertical hetero-stack
CN106684251B (zh) * 2016-12-09 2018-06-01 武汉华星光电技术有限公司 柔性垂直沟道有机薄膜晶体管及其制作方法
US10269564B2 (en) 2017-03-17 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a semiconductor device using layered etching and repairing of damaged portions
US10446694B2 (en) * 2017-06-13 2019-10-15 National Applied Research Laboratories Field-effect transistor structure having two-dimensional transition metal dichalcogenide
WO2019005074A1 (en) * 2017-06-29 2019-01-03 Intel Corporation NON-PLANE TRANSITION METAL DICHALCOGENIC DEVICES
WO2019066953A1 (en) 2017-09-29 2019-04-04 Intel Corporation REDUCED CONTACT RESISTANCE GROUP III (N-N) NITRIDE DEVICES AND METHODS OF MAKING SAME
CN108231871B (zh) * 2018-01-31 2023-11-03 华南理工大学 一种MoS2基量子阱型调制掺杂场效应晶体管及其制备方法
CN108206218A (zh) * 2018-02-02 2018-06-26 华南理工大学 一种MoS2基金属半导体场效应晶体管及其制备方法
CN108346582A (zh) * 2018-02-26 2018-07-31 上海电力学院 一种低欧姆接触场效应晶体管的制备方法
US11908690B2 (en) 2019-06-20 2024-02-20 The Board Of Trustees Of The Leland Stanford Junior University Multi-layered semiconductive device and methodology with polymer and transition metal dichalcogenide material
KR102249313B1 (ko) * 2020-01-02 2021-05-07 성균관대학교산학협력단 무선 주파수 안테나 구조체 및 이의 제조방법
US20220102495A1 (en) * 2020-09-25 2022-03-31 Intel Corporation Transistors including two-dimensional materials
US11527659B2 (en) * 2020-10-14 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
EP4199115A1 (en) * 2021-12-17 2023-06-21 IMEC vzw Transistor with low parasitic capacitance

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US7242041B2 (en) * 2003-09-22 2007-07-10 Lucent Technologies Inc. Field-effect transistors with weakly coupled layered inorganic semiconductors
EP2068368B1 (en) 2007-12-06 2012-10-10 Electronics and Telecommunications Research Institute Method for manufacturing n-type and p-type chalcogenide thin film transistor
WO2012093360A1 (en) * 2011-01-04 2012-07-12 Ecole Polytechnique Federale De Lausanne (Epfl) Semiconductor device
US8766330B2 (en) * 2011-10-28 2014-07-01 Georgetown University Method and system for generating a photo-response from MoS2 Schottky junctions
CN103378149A (zh) * 2012-04-20 2013-10-30 中国科学院微电子研究所 Mosfet及其制造方法
KR101348059B1 (ko) * 2012-07-06 2014-01-03 성균관대학교산학협력단 산소 플라즈마 처리된 채널층을 포함한 박막 트랜지스터 및 이의 제조 방법
CN103400859B (zh) * 2013-08-13 2016-01-20 中国科学院上海微系统与信息技术研究所 基于石墨烯的隧穿场效应管单元、阵列及其形成方法
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US20160093491A1 (en) * 2014-09-29 2016-03-31 University Of North Texas LARGE SCALE AND THICKNESS-MODULATED MoS2 NANOSHEETS

Also Published As

Publication number Publication date
US20170012117A1 (en) 2017-01-12
US9748371B2 (en) 2017-08-29
EP3120384A4 (en) 2017-09-27
EP3120384B1 (en) 2020-01-15
TWI577011B (zh) 2017-04-01
TW201545340A (zh) 2015-12-01
KR102132806B1 (ko) 2020-07-13
KR20160136286A (ko) 2016-11-29
WO2015142358A1 (en) 2015-09-24
CN106030807B (zh) 2019-09-13
EP3120384A1 (en) 2017-01-25
CN106030807A (zh) 2016-10-12

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