SG11201604062WA - Rotatable heated electrostatic chuck - Google Patents
Rotatable heated electrostatic chuckInfo
- Publication number
- SG11201604062WA SG11201604062WA SG11201604062WA SG11201604062WA SG11201604062WA SG 11201604062W A SG11201604062W A SG 11201604062WA SG 11201604062W A SG11201604062W A SG 11201604062WA SG 11201604062W A SG11201604062W A SG 11201604062WA SG 11201604062W A SG11201604062W A SG 11201604062WA
- Authority
- SG
- Singapore
- Prior art keywords
- electrostatic chuck
- rotatable heated
- heated electrostatic
- rotatable
- chuck
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361917921P | 2013-12-18 | 2013-12-18 | |
| US14/560,744 US9853579B2 (en) | 2013-12-18 | 2014-12-04 | Rotatable heated electrostatic chuck |
| PCT/US2014/069040 WO2015094750A1 (en) | 2013-12-18 | 2014-12-08 | Rotatable heated electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201604062WA true SG11201604062WA (en) | 2016-07-28 |
Family
ID=53369382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201604062WA SG11201604062WA (en) | 2013-12-18 | 2014-12-08 | Rotatable heated electrostatic chuck |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9853579B2 (https=) |
| EP (1) | EP3084819B1 (https=) |
| JP (1) | JP6530755B2 (https=) |
| KR (1) | KR102243410B1 (https=) |
| CN (2) | CN105874585B (https=) |
| SG (1) | SG11201604062WA (https=) |
| TW (1) | TWI649833B (https=) |
| WO (1) | WO2015094750A1 (https=) |
Families Citing this family (53)
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| US9888528B2 (en) | 2014-12-31 | 2018-02-06 | Applied Materials, Inc. | Substrate support with multiple heating zones |
| JP6655310B2 (ja) * | 2015-07-09 | 2020-02-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| TWI725067B (zh) | 2015-10-28 | 2021-04-21 | 美商應用材料股份有限公司 | 可旋轉靜電夾盤 |
| US10460969B2 (en) * | 2016-08-22 | 2019-10-29 | Applied Materials, Inc. | Bipolar electrostatic chuck and method for using the same |
| US10784139B2 (en) * | 2016-12-16 | 2020-09-22 | Applied Materials, Inc. | Rotatable electrostatic chuck having backside gas supply |
| US10573498B2 (en) * | 2017-01-09 | 2020-02-25 | Applied Materials, Inc. | Substrate processing apparatus including annular lamp assembly |
| US20180213608A1 (en) * | 2017-01-20 | 2018-07-26 | Applied Materials, Inc. | Electrostatic chuck with radio frequency isolated heaters |
| US11270902B2 (en) * | 2017-03-09 | 2022-03-08 | Ev Group E. Thallner Gmbh | Electrostatic substrate holder |
| JP6605061B2 (ja) * | 2017-07-07 | 2019-11-13 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
| US10811296B2 (en) * | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US11149345B2 (en) * | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| CN111564354B (zh) * | 2019-02-14 | 2024-11-15 | 上海陛通半导体能源科技股份有限公司 | 用于晶圆等离子体刻蚀的方法和设备 |
| KR102699383B1 (ko) | 2019-04-18 | 2024-08-26 | 삼성전자주식회사 | 웨이퍼 클리닝 장치 |
| USD893441S1 (en) | 2019-06-28 | 2020-08-18 | Applied Materials, Inc. | Base plate for a processing chamber substrate support |
| KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
| KR102347145B1 (ko) * | 2020-01-29 | 2022-01-04 | 무진전자 주식회사 | 회전 척에 내장된 광원을 이용한 기판 처리 장치 |
| CN111477569B (zh) * | 2020-04-10 | 2024-02-27 | 北京北方华创微电子装备有限公司 | 一种半导体设备中的加热装置及半导体设备 |
| CN113832450A (zh) * | 2020-06-24 | 2021-12-24 | 拓荆科技股份有限公司 | 用于晶圆自动升降旋转的方法及设备 |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| USD947914S1 (en) | 2020-11-23 | 2022-04-05 | Applied Materials, Inc. | Base plate for a processing chamber substrate support |
| CN112760609B (zh) * | 2020-12-22 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 磁控溅射设备 |
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| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
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| US12525433B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
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| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US12014906B2 (en) | 2021-11-19 | 2024-06-18 | Applied Materials, Inc. | High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber |
| WO2023091629A2 (en) * | 2021-11-22 | 2023-05-25 | Cvd Equipment Corporation | Improvements in chemical vapor deposition systems |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| CN114267625B (zh) * | 2021-12-20 | 2025-06-24 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其承载装置 |
| US20230282506A1 (en) * | 2022-03-02 | 2023-09-07 | Applied Materials, Inc. | Biasable rotating pedestal |
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| US12586768B2 (en) | 2022-08-10 | 2026-03-24 | Applied Materials, Inc. | Pulsed voltage compensation for plasma processing applications |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
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| US9793144B2 (en) | 2011-08-30 | 2017-10-17 | Evatec Ag | Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer |
| KR20140108267A (ko) * | 2011-12-15 | 2014-09-05 | 캐논 아네르바 가부시키가이샤 | 기판 홀더 장치 및 진공 처리 장치 |
| WO2013111363A1 (ja) * | 2012-01-26 | 2013-08-01 | 京セラ株式会社 | 静電チャック |
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| US8906810B2 (en) * | 2013-05-07 | 2014-12-09 | Lam Research Corporation | Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization |
| JP6088346B2 (ja) * | 2013-05-09 | 2017-03-01 | 新光電気工業株式会社 | 静電チャック及び半導体製造装置 |
-
2014
- 2014-12-04 US US14/560,744 patent/US9853579B2/en active Active
- 2014-12-08 EP EP14872752.2A patent/EP3084819B1/en active Active
- 2014-12-08 WO PCT/US2014/069040 patent/WO2015094750A1/en not_active Ceased
- 2014-12-08 TW TW103142630A patent/TWI649833B/zh active
- 2014-12-08 KR KR1020167018839A patent/KR102243410B1/ko active Active
- 2014-12-08 CN CN201480067593.1A patent/CN105874585B/zh active Active
- 2014-12-08 SG SG11201604062WA patent/SG11201604062WA/en unknown
- 2014-12-08 JP JP2016541378A patent/JP6530755B2/ja active Active
- 2014-12-08 CN CN201811152060.XA patent/CN109585252B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160098388A (ko) | 2016-08-18 |
| JP2017502514A (ja) | 2017-01-19 |
| EP3084819A4 (en) | 2017-05-17 |
| CN105874585B (zh) | 2019-01-04 |
| CN109585252A (zh) | 2019-04-05 |
| TWI649833B (zh) | 2019-02-01 |
| EP3084819A1 (en) | 2016-10-26 |
| WO2015094750A1 (en) | 2015-06-25 |
| CN105874585A (zh) | 2016-08-17 |
| US9853579B2 (en) | 2017-12-26 |
| EP3084819B1 (en) | 2018-08-15 |
| JP6530755B2 (ja) | 2019-06-12 |
| CN109585252B (zh) | 2021-05-07 |
| US20150170952A1 (en) | 2015-06-18 |
| KR102243410B1 (ko) | 2021-04-21 |
| TW201528424A (zh) | 2015-07-16 |
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