SG11201601227QA - Carrier-substrate adhesive system - Google Patents

Carrier-substrate adhesive system

Info

Publication number
SG11201601227QA
SG11201601227QA SG11201601227QA SG11201601227QA SG11201601227QA SG 11201601227Q A SG11201601227Q A SG 11201601227QA SG 11201601227Q A SG11201601227Q A SG 11201601227QA SG 11201601227Q A SG11201601227Q A SG 11201601227QA SG 11201601227Q A SG11201601227Q A SG 11201601227QA
Authority
SG
Singapore
Prior art keywords
carrier
adhesive system
substrate adhesive
substrate
adhesive
Prior art date
Application number
SG11201601227QA
Other languages
English (en)
Inventor
Corey Patrick Fucetola
Henry Ignatius Smith
Jay J Fucetola
Original Assignee
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology filed Critical Massachusetts Inst Technology
Publication of SG11201601227QA publication Critical patent/SG11201601227QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2551/00—Optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Micromachines (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Thermal Sciences (AREA)
  • Laminated Bodies (AREA)
SG11201601227QA 2013-08-22 2014-08-15 Carrier-substrate adhesive system SG11201601227QA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361868765P 2013-08-22 2013-08-22
US201462004549P 2014-05-29 2014-05-29
US14/459,879 US9359198B2 (en) 2013-08-22 2014-08-14 Carrier-substrate adhesive system
PCT/US2014/051181 WO2015026635A1 (en) 2013-08-22 2014-08-15 Carrier-substrate adhesive system

Publications (1)

Publication Number Publication Date
SG11201601227QA true SG11201601227QA (en) 2016-03-30

Family

ID=52479297

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201601227QA SG11201601227QA (en) 2013-08-22 2014-08-15 Carrier-substrate adhesive system

Country Status (10)

Country Link
US (1) US9359198B2 (zh)
EP (1) EP3036189A4 (zh)
JP (1) JP6539658B2 (zh)
KR (1) KR20160051793A (zh)
CN (1) CN105636900B (zh)
CA (1) CA2922087A1 (zh)
MY (1) MY178232A (zh)
PH (1) PH12016500343B1 (zh)
SG (1) SG11201601227QA (zh)
WO (1) WO2015026635A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10046550B2 (en) 2013-08-22 2018-08-14 Massachusetts Institute Of Technology Carrier-substrate adhesive system
WO2017062202A1 (en) * 2015-10-08 2017-04-13 Massachusetts Institute Of Technology Carrier-substrate adhesive system
TWM546597U (zh) 2015-10-12 2017-08-01 應用材料股份有限公司 用於固持基板之基板載體

Family Cites Families (26)

* Cited by examiner, † Cited by third party
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US4070117A (en) * 1972-06-12 1978-01-24 Kasper Instruments, Inc. Apparatus for the automatic alignment of two superimposed objects, e.g. a semiconductor wafer and mask
JPH01208842A (ja) 1988-02-16 1989-08-22 Nec Corp 半導体集積回路装置の製造方法
JPH0344067A (ja) * 1989-07-11 1991-02-25 Nec Corp 半導体基板の積層方法
US5459351A (en) 1994-06-29 1995-10-17 Honeywell Inc. Apparatus for mounting an absolute pressure sensor
JPH104206A (ja) 1996-01-29 1998-01-06 Matsushita Denchi Kogyo Kk 化合物半導体薄膜の形成法と同薄膜を用いた光電変換素子
DE19754619A1 (de) 1997-12-09 1999-06-24 Mze Engineering Fuer Verfahren Erzeugnis aus einem porösen Träger, der von einem Kunststoff durchsetzt ist
US6114088A (en) 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
US7535100B2 (en) * 2002-07-12 2009-05-19 The United States Of America As Represented By The Secretary Of The Navy Wafer bonding of thinned electronic materials and circuits to high performance substrates
DE10260233B4 (de) * 2002-12-20 2016-05-19 Infineon Technologies Ag Verfahren zum Befestigen eines Werkstücks mit einem Feststoff an einem Werkstückträger und Werkstückträger
WO2004087826A2 (en) 2003-04-01 2004-10-14 De-Bonding Limited Method and apparatus for bonding and debonding adhesive interface surfaces
JP2005191535A (ja) * 2003-12-01 2005-07-14 Tokyo Ohka Kogyo Co Ltd 貼り付け装置および貼り付け方法
US7829386B2 (en) 2005-08-17 2010-11-09 General Electric Company Power semiconductor packaging method and structure
US7262444B2 (en) 2005-08-17 2007-08-28 General Electric Company Power semiconductor packaging method and structure
US7884032B2 (en) 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US7993969B2 (en) 2006-08-10 2011-08-09 Infineon Technologies Ag Method for producing a module with components stacked one above another
CN101425583B (zh) * 2007-11-02 2011-06-08 清华大学 燃料电池膜电极及其制备方法
CN101465434B (zh) 2007-12-19 2010-09-29 清华大学 燃料电池膜电极及其制备方法
US20090266418A1 (en) 2008-02-18 2009-10-29 Board Of Regents, The University Of Texas System Photovoltaic devices based on nanostructured polymer films molded from porous template
EP2145916B1 (en) * 2008-07-17 2013-06-19 W.L.Gore & Associates Gmbh Substrate coating comprising a complex of an ionic fluoropolymer and surface charged nanoparticles
US7867876B2 (en) * 2008-12-23 2011-01-11 International Business Machines Corporation Method of thinning a semiconductor substrate
JP2012129325A (ja) * 2010-12-14 2012-07-05 Sumitomo Bakelite Co Ltd 基材の加工方法
CN103299416A (zh) * 2011-01-17 2013-09-11 Ev集团E·索尔纳有限责任公司 用于从载体基质剥离产品基质的方法
US9236271B2 (en) * 2012-04-18 2016-01-12 Globalfoundries Inc. Laser-initiated exfoliation of group III-nitride films and applications for layer transfer and patterning
JP6007688B2 (ja) * 2012-09-11 2016-10-12 富士電機株式会社 半導体装置の製造方法
US20140144593A1 (en) * 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation

Also Published As

Publication number Publication date
WO2015026635A1 (en) 2015-02-26
CN105636900B (zh) 2019-12-31
EP3036189A1 (en) 2016-06-29
US9359198B2 (en) 2016-06-07
US20150053337A1 (en) 2015-02-26
PH12016500343A1 (en) 2016-05-02
PH12016500343B1 (en) 2016-05-02
CN105636900A (zh) 2016-06-01
JP6539658B2 (ja) 2019-07-03
KR20160051793A (ko) 2016-05-11
MY178232A (en) 2020-10-07
JP2016531445A (ja) 2016-10-06
EP3036189A4 (en) 2017-04-19
CA2922087A1 (en) 2015-02-26

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