SG11201510185VA - Target age compensation method for performing stable reactive sputtering processes - Google Patents
Target age compensation method for performing stable reactive sputtering processesInfo
- Publication number
- SG11201510185VA SG11201510185VA SG11201510185VA SG11201510185VA SG11201510185VA SG 11201510185V A SG11201510185V A SG 11201510185VA SG 11201510185V A SG11201510185V A SG 11201510185VA SG 11201510185V A SG11201510185V A SG 11201510185VA SG 11201510185V A SG11201510185V A SG 11201510185VA
- Authority
- SG
- Singapore
- Prior art keywords
- compensation method
- reactive sputtering
- performing stable
- target age
- sputtering processes
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 238000005546 reactive sputtering Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013011068.8A DE102013011068A1 (de) | 2013-07-03 | 2013-07-03 | Targetalter-Kompensationsverfahren zur Durchführung von stabilen reaktiven Sputterverfahren |
| PCT/EP2014/001780 WO2015000575A1 (en) | 2013-07-03 | 2014-06-30 | Target age compensation method for performing stable reactive sputtering processes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201510185VA true SG11201510185VA (en) | 2016-01-28 |
Family
ID=51134002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201510185VA SG11201510185VA (en) | 2013-07-03 | 2014-06-30 | Target age compensation method for performing stable reactive sputtering processes |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US9957600B2 (ko) |
| EP (1) | EP3017077B1 (ko) |
| JP (1) | JP6397906B2 (ko) |
| KR (1) | KR102233345B1 (ko) |
| CN (1) | CN105339521B (ko) |
| BR (1) | BR112015032133B1 (ko) |
| CA (1) | CA2916765C (ko) |
| DE (1) | DE102013011068A1 (ko) |
| HK (1) | HK1219517A1 (ko) |
| IL (1) | IL243138B (ko) |
| MX (1) | MX2015016577A (ko) |
| PH (1) | PH12015502622A1 (ko) |
| RU (1) | RU2016103226A (ko) |
| SG (1) | SG11201510185VA (ko) |
| WO (1) | WO2015000575A1 (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018220067A1 (en) * | 2017-06-01 | 2018-12-06 | Oerlikon Surface Solutions Ag, Pfäffikon | Target assembly for safe and economic evaporation of brittle materials |
| CN107740053B (zh) * | 2017-10-30 | 2019-10-15 | 广东工业大学 | 一种AlCrSiN/VSiN纳米多层涂层及其制备方法 |
| WO2019162041A1 (en) * | 2018-02-26 | 2019-08-29 | Evatec Ag | Stabilizing stress in a layer with respect to thermal loading |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0288772A (ja) * | 1988-09-22 | 1990-03-28 | Hitachi Metals Ltd | スパッタ装置の膜厚制御方法 |
| JP2734588B2 (ja) | 1988-12-28 | 1998-03-30 | 日本電気株式会社 | スパッタ装置 |
| US6224724B1 (en) | 1995-02-23 | 2001-05-01 | Tokyo Electron Limited | Physical vapor processing of a surface with non-uniformity compensation |
| JP3814764B2 (ja) | 1995-02-23 | 2006-08-30 | 東京エレクトロン株式会社 | スパッタ処理方式 |
| JPH08260142A (ja) * | 1995-03-24 | 1996-10-08 | Kawasaki Steel Corp | スパッタリング装置のターゲット消費量推算方法 |
| DE19605316C1 (de) * | 1996-02-14 | 1996-12-12 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zur Regelung von plasmagestützten Vakuumbeschichtungsprozessen |
| US6537428B1 (en) | 1999-09-02 | 2003-03-25 | Veeco Instruments, Inc. | Stable high rate reactive sputtering |
| US6562715B1 (en) * | 2000-08-09 | 2003-05-13 | Applied Materials, Inc. | Barrier layer structure for copper metallization and method of forming the structure |
| US7324865B1 (en) * | 2001-05-09 | 2008-01-29 | Advanced Micro Devices, Inc. | Run-to-run control method for automated control of metal deposition processes |
| TWI269815B (en) * | 2002-05-20 | 2007-01-01 | Tosoh Smd Inc | Replaceable target sidewall insert with texturing |
| DE10347521A1 (de) | 2002-12-04 | 2004-06-24 | Leybold Optics Gmbh | Verfahren zur Herstellung Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens |
| DE102004024351A1 (de) | 2004-05-17 | 2005-12-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zum Aufbringen eines Dünnschichtsystems mittels Zerstäuben |
| JP4040607B2 (ja) * | 2004-06-14 | 2008-01-30 | 芝浦メカトロニクス株式会社 | スパッタリング装置及び方法並びにスパッタリング制御用プログラム |
| US7891536B2 (en) * | 2005-09-26 | 2011-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target with end of service life detection capability |
| US8133360B2 (en) * | 2007-12-20 | 2012-03-13 | Applied Materials, Inc. | Prediction and compensation of erosion in a magnetron sputtering target |
| DE102011115145A1 (de) | 2011-09-27 | 2013-03-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Magnetronsputtern mit Ausgleich der Targeterosion |
-
2013
- 2013-07-03 DE DE102013011068.8A patent/DE102013011068A1/de not_active Withdrawn
-
2014
- 2014-06-30 EP EP14735854.3A patent/EP3017077B1/en active Active
- 2014-06-30 WO PCT/EP2014/001780 patent/WO2015000575A1/en active Application Filing
- 2014-06-30 BR BR112015032133-0A patent/BR112015032133B1/pt active IP Right Grant
- 2014-06-30 RU RU2016103226A patent/RU2016103226A/ru not_active Application Discontinuation
- 2014-06-30 CA CA2916765A patent/CA2916765C/en active Active
- 2014-06-30 KR KR1020167001988A patent/KR102233345B1/ko active IP Right Grant
- 2014-06-30 JP JP2016522326A patent/JP6397906B2/ja active Active
- 2014-06-30 MX MX2015016577A patent/MX2015016577A/es unknown
- 2014-06-30 US US14/902,575 patent/US9957600B2/en active Active
- 2014-06-30 CN CN201480034388.5A patent/CN105339521B/zh active Active
- 2014-06-30 SG SG11201510185VA patent/SG11201510185VA/en unknown
-
2015
- 2015-11-24 PH PH12015502622A patent/PH12015502622A1/en unknown
- 2015-12-15 IL IL24313815A patent/IL243138B/en active IP Right Grant
-
2016
- 2016-06-29 HK HK16107569.8A patent/HK1219517A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN105339521A (zh) | 2016-02-17 |
| EP3017077A1 (en) | 2016-05-11 |
| KR102233345B1 (ko) | 2021-03-30 |
| RU2016103226A (ru) | 2017-08-08 |
| CA2916765C (en) | 2022-05-03 |
| CN105339521B (zh) | 2018-05-04 |
| MX2015016577A (es) | 2017-01-18 |
| DE102013011068A1 (de) | 2015-01-08 |
| HK1219517A1 (zh) | 2017-04-07 |
| PH12015502622A1 (en) | 2016-03-07 |
| US9957600B2 (en) | 2018-05-01 |
| BR112015032133A2 (pt) | 2017-07-25 |
| EP3017077B1 (en) | 2019-11-27 |
| BR112015032133B1 (pt) | 2021-11-30 |
| JP6397906B2 (ja) | 2018-09-26 |
| IL243138B (en) | 2019-11-28 |
| KR20160027022A (ko) | 2016-03-09 |
| JP2016526604A (ja) | 2016-09-05 |
| US20160168686A1 (en) | 2016-06-16 |
| CA2916765A1 (en) | 2015-01-08 |
| WO2015000575A1 (en) | 2015-01-08 |
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