SG11201507552WA - Gold containing die bond sheet preform spot-welded to a semiconductor bond site on a semiconductor package and corresponding manufacturing method - Google Patents
Gold containing die bond sheet preform spot-welded to a semiconductor bond site on a semiconductor package and corresponding manufacturing methodInfo
- Publication number
- SG11201507552WA SG11201507552WA SG11201507552WA SG11201507552WA SG11201507552WA SG 11201507552W A SG11201507552W A SG 11201507552WA SG 11201507552W A SG11201507552W A SG 11201507552WA SG 11201507552W A SG11201507552W A SG 11201507552WA SG 11201507552W A SG11201507552W A SG 11201507552WA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor
- spot
- welded
- corresponding manufacturing
- gold containing
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/271—Manufacture and pre-treatment of the layer connector preform
- H01L2224/2711—Shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2746—Plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83444—Gold [Au] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83815—Reflow soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361793751P | 2013-03-15 | 2013-03-15 | |
PCT/US2014/023872 WO2014150643A1 (fr) | 2013-03-15 | 2014-03-12 | Préforme de feuille de fixation de puce en or soudée par points à une aire de soudure semiconductrice sur un boîtier de semi-conducteur et procédé de production approprié |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201507552WA true SG11201507552WA (en) | 2015-10-29 |
Family
ID=50686120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201507552WA SG11201507552WA (en) | 2013-03-15 | 2014-03-12 | Gold containing die bond sheet preform spot-welded to a semiconductor bond site on a semiconductor package and corresponding manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US8975176B2 (fr) |
EP (1) | EP2973672B1 (fr) |
CN (1) | CN105122436B (fr) |
MY (1) | MY172913A (fr) |
PH (1) | PH12015502124A1 (fr) |
SG (1) | SG11201507552WA (fr) |
WO (1) | WO2014150643A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10211115B2 (en) | 2014-05-21 | 2019-02-19 | Materion Corporation | Method of making a ceramic combo lid with selective and edge metallizations |
EP4060723A1 (fr) | 2014-10-01 | 2022-09-21 | Materion Corporation | Couvercle à métallisation sélective et du bord |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1047390A (fr) * | 1963-05-20 | 1900-01-01 | ||
US3495322A (en) | 1967-07-20 | 1970-02-17 | Motorola Inc | Process for bonding a silicon wafer to a ceramic substrate |
JPS553815B1 (fr) * | 1967-10-02 | 1980-01-26 | ||
US3660632A (en) | 1970-06-17 | 1972-05-02 | Us Navy | Method for bonding silicon chips to a cold substrate |
US3728090A (en) | 1970-06-30 | 1973-04-17 | Texas Instruments Inc | Semiconductor bonding alloy |
US4181249A (en) * | 1977-08-26 | 1980-01-01 | Hughes Aircraft Company | Eutectic die attachment method for integrated circuits |
US4620215A (en) * | 1982-04-16 | 1986-10-28 | Amdahl Corporation | Integrated circuit packaging systems with double surface heat dissipation |
US4650922A (en) * | 1985-03-11 | 1987-03-17 | Texas Instruments Incorporated | Thermally matched mounting substrate |
US4872047A (en) | 1986-11-07 | 1989-10-03 | Olin Corporation | Semiconductor die attach system |
US5037778A (en) | 1989-05-12 | 1991-08-06 | Intel Corporation | Die attach using gold ribbon with gold/silicon eutectic alloy cladding |
JP3181283B2 (ja) | 1989-08-07 | 2001-07-03 | 株式会社日立製作所 | はんだ接続された電子回路装置とはんだ接続方法並びに金メッキ接続端子用はんだ |
WO1991009699A1 (fr) * | 1989-12-29 | 1991-07-11 | Williams Advanced Materials Inc. | Soudage de cadre de brasage a un couvercle en ceramique dans la mise sous boitier de semi-conducteurs |
JP2946837B2 (ja) * | 1991-05-16 | 1999-09-06 | ミツミ電機株式会社 | ダイボンディング用プリフォームの製造方法 |
JP2994510B2 (ja) * | 1992-02-10 | 1999-12-27 | ローム株式会社 | 半導体装置およびその製法 |
JPH05226564A (ja) * | 1992-02-14 | 1993-09-03 | Rohm Co Ltd | 半導体装置 |
US5667884A (en) | 1993-04-12 | 1997-09-16 | Bolger; Justin C. | Area bonding conductive adhesive preforms |
US5666004A (en) * | 1994-09-28 | 1997-09-09 | Intel Corporation | Use of tantalum oxide capacitor on ceramic co-fired technology |
US5622305A (en) | 1995-05-10 | 1997-04-22 | Lucent Technologies Inc. | Bonding scheme using group VB metallic layer |
US6133637A (en) | 1997-01-24 | 2000-10-17 | Rohm Co., Ltd. | Semiconductor device having a plurality of semiconductor chips |
US5930666A (en) | 1997-10-09 | 1999-07-27 | Astralux, Incorporated | Method and apparatus for packaging high temperature solid state electronic devices |
US20050136640A1 (en) | 2002-01-07 | 2005-06-23 | Chuan Hu | Die exhibiting an effective coefficient of thermal expansion equivalent to a substrate mounted thereon, and processes of making same |
ATE519229T1 (de) * | 2005-05-04 | 2011-08-15 | Nxp Bv | Einrichtung mit einem sensormodul |
EP2043302B1 (fr) | 2006-07-04 | 2016-04-13 | Panasonic Corporation | Système de communication radio |
WO2008045779A2 (fr) * | 2006-10-06 | 2008-04-17 | Williams Advanced Materials, Inc. | Préforme de feuille de fixation de puce en or |
US7595553B2 (en) | 2006-11-08 | 2009-09-29 | Sanyo Electric Co., Ltd. | Packaging board and manufacturing method therefor, semiconductor module and mobile apparatus |
US8212277B2 (en) | 2008-07-29 | 2012-07-03 | Stanley Electric Co., Ltd. | Optical semiconductor device module with power supply through uneven contacts |
-
2014
- 2014-03-12 SG SG11201507552WA patent/SG11201507552WA/en unknown
- 2014-03-12 MY MYPI2015703149A patent/MY172913A/en unknown
- 2014-03-12 WO PCT/US2014/023872 patent/WO2014150643A1/fr active Application Filing
- 2014-03-12 EP EP14722830.8A patent/EP2973672B1/fr active Active
- 2014-03-12 CN CN201480022044.2A patent/CN105122436B/zh active Active
- 2014-03-12 US US14/205,403 patent/US8975176B2/en active Active
-
2015
- 2015-09-14 PH PH12015502124A patent/PH12015502124A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
US8975176B2 (en) | 2015-03-10 |
CN105122436B (zh) | 2018-09-25 |
US20140264949A1 (en) | 2014-09-18 |
EP2973672B1 (fr) | 2018-07-11 |
MY172913A (en) | 2019-12-13 |
EP2973672A1 (fr) | 2016-01-20 |
PH12015502124B1 (en) | 2016-01-25 |
CN105122436A (zh) | 2015-12-02 |
WO2014150643A1 (fr) | 2014-09-25 |
PH12015502124A1 (en) | 2016-01-25 |
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