ATE519229T1 - Einrichtung mit einem sensormodul - Google Patents

Einrichtung mit einem sensormodul

Info

Publication number
ATE519229T1
ATE519229T1 AT06728059T AT06728059T ATE519229T1 AT E519229 T1 ATE519229 T1 AT E519229T1 AT 06728059 T AT06728059 T AT 06728059T AT 06728059 T AT06728059 T AT 06728059T AT E519229 T1 ATE519229 T1 AT E519229T1
Authority
AT
Austria
Prior art keywords
solder bumps
mechanically
electrically
functional layers
package
Prior art date
Application number
AT06728059T
Other languages
English (en)
Inventor
Hans Boeve
Teunis Ikkink
Veen Nicolaas Van
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE519229T1 publication Critical patent/ATE519229T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Measuring Magnetic Variables (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
  • Hall/Mr Elements (AREA)
AT06728059T 2005-05-04 2006-04-27 Einrichtung mit einem sensormodul ATE519229T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05103724 2005-05-04
PCT/IB2006/051313 WO2006117727A1 (en) 2005-05-04 2006-04-27 A device comprising a sensor module

Publications (1)

Publication Number Publication Date
ATE519229T1 true ATE519229T1 (de) 2011-08-15

Family

ID=36763123

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06728059T ATE519229T1 (de) 2005-05-04 2006-04-27 Einrichtung mit einem sensormodul

Country Status (7)

Country Link
US (1) US7804165B2 (de)
EP (1) EP1880422B1 (de)
JP (1) JP2008541039A (de)
KR (1) KR20080014823A (de)
CN (2) CN103545332B (de)
AT (1) ATE519229T1 (de)
WO (1) WO2006117727A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768083B2 (en) 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor
US20110133327A1 (en) * 2009-12-09 2011-06-09 Hung-Hsin Hsu Semiconductor package of metal post solder-chip connection
CN103208501B (zh) * 2012-01-17 2017-07-28 奥林巴斯株式会社 固体摄像装置及其制造方法、摄像装置、基板、半导体装置
CN102735396A (zh) * 2012-07-18 2012-10-17 重庆长安志阳汽车电气有限责任公司 一种汽车发动机进气压力传感器
US8975176B2 (en) * 2013-03-15 2015-03-10 Materion Corporation Gold die bond sheet preform
CN104143232A (zh) * 2013-05-08 2014-11-12 北京嘉岳同乐极电子有限公司 一种芯片磁传感器
JP6077436B2 (ja) * 2013-11-28 2017-02-08 京セラ株式会社 配線基板および配線基板への半導体素子の実装方法
CN103744038A (zh) * 2013-12-31 2014-04-23 江苏多维科技有限公司 近距离磁电阻成像传感器阵列
CN203809329U (zh) * 2014-04-14 2014-09-03 江苏多维科技有限公司 一种直流风扇控制芯片
CN104465583A (zh) * 2014-12-09 2015-03-25 三星半导体(中国)研究开发有限公司 球栅阵列封装件及将其安装在基板上的方法
US10935612B2 (en) 2018-08-20 2021-03-02 Allegro Microsystems, Llc Current sensor having multiple sensitivity ranges
US11567108B2 (en) 2021-03-31 2023-01-31 Allegro Microsystems, Llc Multi-gain channels for multi-range sensor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365088A (en) * 1988-08-02 1994-11-15 Santa Barbara Research Center Thermal/mechanical buffer for HgCdTe/Si direct hybridization
JPH05251717A (ja) * 1992-03-04 1993-09-28 Hitachi Ltd 半導体パッケージおよび半導体モジュール
FR2715002B1 (fr) 1994-01-07 1996-02-16 Commissariat Energie Atomique Détecteur de rayonnement électromagnétique et son procédé de fabrication.
US5729896A (en) 1996-10-31 1998-03-24 International Business Machines Corporation Method for attaching a flip chip on flexible circuit carrier using chip with metallic cap on solder
JP3951091B2 (ja) * 2000-08-04 2007-08-01 セイコーエプソン株式会社 半導体装置の製造方法
US6828545B1 (en) * 2001-05-15 2004-12-07 Raytheon Company Hybrid microelectronic array structure having electrically isolated supported islands, and its fabrication
JP2002353398A (ja) * 2001-05-25 2002-12-06 Nec Kyushu Ltd 半導体装置
US6486545B1 (en) * 2001-07-26 2002-11-26 Amkor Technology, Inc. Pre-drilled ball grid array package
US6765287B1 (en) * 2001-07-27 2004-07-20 Charles W. C. Lin Three-dimensional stacked semiconductor package
JP4010881B2 (ja) * 2002-06-13 2007-11-21 新光電気工業株式会社 半導体モジュール構造
JP2004271312A (ja) * 2003-03-07 2004-09-30 Denso Corp 容量型半導体センサ装置
TWI229890B (en) * 2003-04-24 2005-03-21 Sanyo Electric Co Semiconductor device and method of manufacturing same
US6836971B1 (en) * 2003-07-30 2005-01-04 Honeywell International Inc. System for using a 2-axis magnetic sensor for a 3-axis compass solution
US7167373B1 (en) * 2004-03-08 2007-01-23 Virtium Technology, Inc. Stacking multiple devices using flexible circuit
TWI281037B (en) * 2004-03-24 2007-05-11 Yamaha Corp Semiconductor device, magnetic sensor, and magnetic sensor unit
US20060108676A1 (en) * 2004-11-22 2006-05-25 Punzalan Nelson V Jr Multi-chip package using an interposer

Also Published As

Publication number Publication date
JP2008541039A (ja) 2008-11-20
CN103545332B (zh) 2016-08-10
US20090166771A1 (en) 2009-07-02
CN101218678A (zh) 2008-07-09
CN103545332A (zh) 2014-01-29
KR20080014823A (ko) 2008-02-14
EP1880422A1 (de) 2008-01-23
WO2006117727A1 (en) 2006-11-09
EP1880422B1 (de) 2011-08-03
US7804165B2 (en) 2010-09-28

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