SG11201505765SA - Nanowire transistor with underlayer etch stops - Google Patents
Nanowire transistor with underlayer etch stopsInfo
- Publication number
- SG11201505765SA SG11201505765SA SG11201505765SA SG11201505765SA SG11201505765SA SG 11201505765S A SG11201505765S A SG 11201505765SA SG 11201505765S A SG11201505765S A SG 11201505765SA SG 11201505765S A SG11201505765S A SG 11201505765SA SG 11201505765S A SG11201505765S A SG 11201505765SA
- Authority
- SG
- Singapore
- Prior art keywords
- nanowire transistor
- etch stops
- underlayer etch
- underlayer
- stops
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7858—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2013/031964 WO2014142952A1 (en) | 2013-03-15 | 2013-03-15 | Nanowire transistor with underlayer etch stops |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201505765SA true SG11201505765SA (en) | 2015-08-28 |
Family
ID=51523559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201505765SA SG11201505765SA (en) | 2013-03-15 | 2013-03-15 | Nanowire transistor with underlayer etch stops |
Country Status (7)
Country | Link |
---|---|
US (3) | US9064944B2 (de) |
KR (1) | KR102037304B1 (de) |
CN (1) | CN105051905B (de) |
DE (1) | DE112013006527T5 (de) |
GB (1) | GB2526457B (de) |
SG (1) | SG11201505765SA (de) |
WO (1) | WO2014142952A1 (de) |
Families Citing this family (52)
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WO2013095651A1 (en) * | 2011-12-23 | 2013-06-27 | Intel Corporation | Non-planar gate all-around device and method of fabrication thereof |
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-
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- 2013-03-15 CN CN201380073109.1A patent/CN105051905B/zh active Active
- 2013-03-15 DE DE112013006527.4T patent/DE112013006527T5/de active Granted
- 2013-03-15 GB GB1513903.3A patent/GB2526457B/en active Active
- 2013-03-15 SG SG11201505765SA patent/SG11201505765SA/en unknown
- 2013-03-15 WO PCT/US2013/031964 patent/WO2014142952A1/en active Application Filing
- 2013-03-15 KR KR1020157021528A patent/KR102037304B1/ko active IP Right Grant
-
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- 2015-04-16 US US14/688,647 patent/US9385221B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
GB2526457A (en) | 2015-11-25 |
US20150221744A1 (en) | 2015-08-06 |
US9385221B2 (en) | 2016-07-05 |
CN105051905B (zh) | 2018-10-23 |
US20140264280A1 (en) | 2014-09-18 |
KR20150130269A (ko) | 2015-11-23 |
WO2014142952A1 (en) | 2014-09-18 |
US20160284821A1 (en) | 2016-09-29 |
DE112013006527T5 (de) | 2015-10-15 |
US9064944B2 (en) | 2015-06-23 |
GB201513903D0 (en) | 2015-09-23 |
CN105051905A (zh) | 2015-11-11 |
KR102037304B1 (ko) | 2019-10-29 |
GB2526457B (en) | 2018-08-22 |
US9614060B2 (en) | 2017-04-04 |
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