SG11201505037VA - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG11201505037VA
SG11201505037VA SG11201505037VA SG11201505037VA SG11201505037VA SG 11201505037V A SG11201505037V A SG 11201505037VA SG 11201505037V A SG11201505037V A SG 11201505037VA SG 11201505037V A SG11201505037V A SG 11201505037VA SG 11201505037V A SG11201505037V A SG 11201505037VA
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG11201505037VA
Other languages
English (en)
Inventor
Shogo Onishi
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201505037VA publication Critical patent/SG11201505037VA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201505037VA 2012-12-28 2013-10-25 Polishing composition SG11201505037VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012288415A JP6057706B2 (ja) 2012-12-28 2012-12-28 研磨用組成物
PCT/JP2013/078968 WO2014103494A1 (ja) 2012-12-28 2013-10-25 研磨用組成物

Publications (1)

Publication Number Publication Date
SG11201505037VA true SG11201505037VA (en) 2015-07-30

Family

ID=51020593

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201505037VA SG11201505037VA (en) 2012-12-28 2013-10-25 Polishing composition

Country Status (6)

Country Link
US (1) US20150322294A1 (ja)
JP (1) JP6057706B2 (ja)
KR (1) KR102154512B1 (ja)
SG (1) SG11201505037VA (ja)
TW (1) TWI592471B (ja)
WO (1) WO2014103494A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016056254A (ja) * 2014-09-08 2016-04-21 株式会社フジミインコーポレーテッド 研磨用組成物
WO2016102279A1 (en) * 2014-12-22 2016-06-30 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or co-balt alloy comprising substrates
US9528030B1 (en) * 2015-10-21 2016-12-27 Cabot Microelectronics Corporation Cobalt inhibitor combination for improved dishing
KR101833219B1 (ko) * 2016-08-05 2018-04-13 주식회사 케이씨텍 텅스텐 베리어층 연마용 슬러리 조성물
JP6819280B2 (ja) * 2016-12-27 2021-01-27 Jsr株式会社 化学機械研磨用組成物および化学機械研磨方法
JP6841166B2 (ja) * 2017-06-09 2021-03-10 堺化学工業株式会社 フェニルアルコキシシラン処理シリカの製造方法
CN109096990A (zh) 2017-06-21 2018-12-28 圣戈本陶瓷及塑料股份有限公司 表面改性的研磨颗粒、研磨制品以及其形成方法
US10647887B2 (en) 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
SG11202008551VA (en) * 2018-03-15 2020-10-29 Nitta Dupont Incorporated Polishing composition
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
US10968366B2 (en) * 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
KR102619857B1 (ko) * 2020-05-20 2023-12-29 삼성에스디아이 주식회사 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 연마 방법
JP6958774B1 (ja) * 2020-06-30 2021-11-02 Jsr株式会社 砥粒の製造方法、化学機械研磨用組成物及び化学機械研磨方法
KR102577164B1 (ko) * 2020-12-29 2023-09-08 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 기판의 연마방법
KR20230106938A (ko) 2022-01-07 2023-07-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100590665B1 (ko) * 1999-07-07 2006-06-19 캐보트 마이크로일렉트로닉스 코포레이션 실란으로 개질된 연마제 입자를 함유하는 cmp 조성물
JP4521058B2 (ja) * 2008-03-24 2010-08-11 株式会社Adeka 表面改質コロイダルシリカおよびこれを含有するcmp用研磨組成物
CN102741985B (zh) * 2010-02-01 2015-12-16 Jsr株式会社 化学机械研磨用水系分散体及利用其的化学机械研磨方法
JP5774283B2 (ja) * 2010-04-08 2015-09-09 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP5141792B2 (ja) * 2010-06-29 2013-02-13 日立化成工業株式会社 Cmp研磨液及び研磨方法
SG10201604609WA (en) * 2011-06-14 2016-07-28 Fujimi Inc Polishing Composition

Also Published As

Publication number Publication date
KR102154512B1 (ko) 2020-09-10
KR20150102990A (ko) 2015-09-09
TWI592471B (zh) 2017-07-21
JP2014130944A (ja) 2014-07-10
TW201430115A (zh) 2014-08-01
US20150322294A1 (en) 2015-11-12
JP6057706B2 (ja) 2017-01-11
WO2014103494A1 (ja) 2014-07-03

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