SG11201504417VA - Seed layer for solar cell conductive contact - Google Patents
Seed layer for solar cell conductive contactInfo
- Publication number
- SG11201504417VA SG11201504417VA SG11201504417VA SG11201504417VA SG11201504417VA SG 11201504417V A SG11201504417V A SG 11201504417VA SG 11201504417V A SG11201504417V A SG 11201504417VA SG 11201504417V A SG11201504417V A SG 11201504417VA SG 11201504417V A SG11201504417V A SG 11201504417VA
- Authority
- SG
- Singapore
- Prior art keywords
- solar cell
- seed layer
- conductive contact
- cell conductive
- contact
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/706,728 US20140158192A1 (en) | 2012-12-06 | 2012-12-06 | Seed layer for solar cell conductive contact |
PCT/US2013/072904 WO2014089103A1 (en) | 2012-12-06 | 2013-12-03 | Seed layer for solar cell conductive contact |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201504417VA true SG11201504417VA (en) | 2015-07-30 |
Family
ID=50879651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201504417VA SG11201504417VA (en) | 2012-12-06 | 2013-12-03 | Seed layer for solar cell conductive contact |
Country Status (10)
Country | Link |
---|---|
US (2) | US20140158192A1 (en) |
EP (1) | EP2929567A4 (en) |
JP (1) | JP6355213B2 (en) |
KR (1) | KR20150092754A (en) |
CN (1) | CN105637593A (en) |
AU (1) | AU2013355406B2 (en) |
MX (1) | MX2015007055A (en) |
SG (1) | SG11201504417VA (en) |
TW (1) | TWI603485B (en) |
WO (1) | WO2014089103A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9837576B2 (en) * | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
CN104362216B (en) * | 2014-10-23 | 2017-02-15 | 云南大学 | Production method of front grid line electrode of crystalline silicon solar cell |
US20160163901A1 (en) * | 2014-12-08 | 2016-06-09 | Benjamin Ian Hsia | Laser stop layer for foil-based metallization of solar cells |
US10535790B2 (en) * | 2015-06-25 | 2020-01-14 | Sunpower Corporation | One-dimensional metallization for solar cells |
US20160380126A1 (en) * | 2015-06-25 | 2016-12-29 | David Aaron Randolph Barkhouse | Multi-layer barrier for metallization |
CN209389043U (en) * | 2018-11-27 | 2019-09-13 | 晶澳(扬州)太阳能科技有限公司 | Crystal silicon solar energy battery and photovoltaic module |
CN115000226B (en) * | 2022-07-29 | 2022-10-11 | 中国华能集团清洁能源技术研究院有限公司 | Back contact heterojunction battery piece and manufacturing method thereof |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5984477A (en) * | 1982-11-04 | 1984-05-16 | Matsushita Electric Ind Co Ltd | Formation of electrode of solar battery |
US4790883A (en) * | 1987-12-18 | 1988-12-13 | Porponth Sichanugrist | Low light level solar cell |
JPH03250671A (en) * | 1990-01-31 | 1991-11-08 | Sharp Corp | Semiconductor photoelectric converting device and its manufacture |
US5626976A (en) * | 1995-07-24 | 1997-05-06 | Motorola, Inc. | Flexible energy storage device with integral charging unit |
US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
KR100366354B1 (en) * | 2001-01-03 | 2002-12-31 | 삼성에스디아이 주식회사 | manufacturing method of silicon solar cell |
US20030178057A1 (en) * | 2001-10-24 | 2003-09-25 | Shuichi Fujii | Solar cell, manufacturing method thereof and electrode material |
CN1180486C (en) * | 2001-10-31 | 2004-12-15 | 四川大学 | Silicon solar cell of nesa with transparent conductive folm front electrode |
JP4221643B2 (en) * | 2002-05-27 | 2009-02-12 | ソニー株式会社 | Photoelectric conversion device |
JP2006261621A (en) * | 2005-02-21 | 2006-09-28 | Osaka Univ | Solar battery and its manufacturing method |
JP2009087957A (en) * | 2005-12-28 | 2009-04-23 | Naoetsu Electronics Co Ltd | Solar battery |
JP2007208049A (en) * | 2006-02-02 | 2007-08-16 | Kyocera Corp | Photoelectric converter, manufacturing method thereof, and optical generator |
ATE486370T1 (en) * | 2007-05-07 | 2010-11-15 | Georgia Tech Res Inst | MAKING A HIGH QUALITY BACK CONTACT WITH LOCAL BACK SCREEN PRINTED SURFACE |
DE102008013446A1 (en) * | 2008-02-15 | 2009-08-27 | Ersol Solar Energy Ag | Process for producing monocrystalline n-silicon solar cells and solar cell, produced by such a process |
US8491718B2 (en) * | 2008-05-28 | 2013-07-23 | Karin Chaudhari | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
CN102265407B (en) * | 2008-12-26 | 2014-02-05 | 株式会社爱发科 | Film-forming device and film-forming method for forming passivation films as well as manufacturing method for solar cell elements |
KR101142861B1 (en) * | 2009-02-04 | 2012-05-08 | 엘지전자 주식회사 | Solar cell and manufacturing method of the same |
US20100269893A1 (en) * | 2009-04-23 | 2010-10-28 | E. I. Du Pont De Nemours And Company | Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces |
WO2010125728A1 (en) * | 2009-04-29 | 2010-11-04 | 三菱電機株式会社 | Solar cell and method of producing same |
KR101144810B1 (en) * | 2009-07-06 | 2012-05-11 | 엘지전자 주식회사 | Electrode paste for solar cell, solar cell using the paste, and manufacturing method of the solar cell |
US9984787B2 (en) * | 2009-11-11 | 2018-05-29 | Samsung Electronics Co., Ltd. | Conductive paste and solar cell |
KR101178180B1 (en) * | 2010-05-07 | 2012-08-30 | 한국다이요잉크 주식회사 | Composition For fabricating rear electrode of crystalline solar cell |
US20120037216A1 (en) * | 2010-08-13 | 2012-02-16 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
JP5430520B2 (en) * | 2010-08-21 | 2014-03-05 | 京セラ株式会社 | Manufacturing method of solar cell |
KR20120064853A (en) * | 2010-12-10 | 2012-06-20 | 삼성전자주식회사 | A solar cell |
CN102097518B (en) * | 2010-12-15 | 2012-12-19 | 清华大学 | Solar cell and preparation method thereof |
CN102637767B (en) * | 2011-02-15 | 2015-03-18 | 上海凯世通半导体有限公司 | Solar cell manufacturing method and solar cell |
US8715387B2 (en) * | 2011-03-08 | 2014-05-06 | E I Du Pont De Nemours And Company | Process for making silver powder particles with small size crystallites |
JP2012212542A (en) * | 2011-03-31 | 2012-11-01 | Aica Kogyo Co Ltd | Paste composition |
US8802486B2 (en) * | 2011-04-25 | 2014-08-12 | Sunpower Corporation | Method of forming emitters for a back-contact solar cell |
KR20120128875A (en) * | 2011-05-18 | 2012-11-28 | 삼성디스플레이 주식회사 | Solar cell and method for fabricating the same |
DE102011056087B4 (en) * | 2011-12-06 | 2018-08-30 | Solarworld Industries Gmbh | Solar cell wafer and process for metallizing a solar cell |
JP5924945B2 (en) * | 2012-01-11 | 2016-05-25 | 東洋アルミニウム株式会社 | Paste composition |
JP6214400B2 (en) * | 2012-02-02 | 2017-10-18 | 東洋アルミニウム株式会社 | Paste composition |
TW201349255A (en) * | 2012-02-24 | 2013-12-01 | Applied Nanotech Holdings Inc | Metallization paste for solar cells |
WO2013149093A1 (en) * | 2012-03-28 | 2013-10-03 | Solexel, Inc. | Back contact solar cells using aluminum-based alloy metallization |
-
2012
- 2012-12-06 US US13/706,728 patent/US20140158192A1/en not_active Abandoned
-
2013
- 2013-12-03 AU AU2013355406A patent/AU2013355406B2/en not_active Ceased
- 2013-12-03 JP JP2015546559A patent/JP6355213B2/en active Active
- 2013-12-03 EP EP13861441.7A patent/EP2929567A4/en not_active Withdrawn
- 2013-12-03 SG SG11201504417VA patent/SG11201504417VA/en unknown
- 2013-12-03 MX MX2015007055A patent/MX2015007055A/en unknown
- 2013-12-03 KR KR1020157017492A patent/KR20150092754A/en not_active Application Discontinuation
- 2013-12-03 WO PCT/US2013/072904 patent/WO2014089103A1/en active Application Filing
- 2013-12-03 CN CN201380066655.2A patent/CN105637593A/en active Pending
- 2013-12-05 TW TW102144717A patent/TWI603485B/en active
-
2016
- 2016-03-04 US US15/061,903 patent/US20160190364A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI603485B (en) | 2017-10-21 |
MX2015007055A (en) | 2015-09-28 |
JP2016508286A (en) | 2016-03-17 |
WO2014089103A1 (en) | 2014-06-12 |
EP2929567A4 (en) | 2015-12-02 |
CN105637593A (en) | 2016-06-01 |
AU2013355406A1 (en) | 2014-06-12 |
JP6355213B2 (en) | 2018-07-11 |
AU2013355406B2 (en) | 2017-06-29 |
US20160190364A1 (en) | 2016-06-30 |
KR20150092754A (en) | 2015-08-13 |
TW201431098A (en) | 2014-08-01 |
US20140158192A1 (en) | 2014-06-12 |
EP2929567A1 (en) | 2015-10-14 |
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