SG11201504342SA - Quartz upper and lower domes - Google Patents

Quartz upper and lower domes

Info

Publication number
SG11201504342SA
SG11201504342SA SG11201504342SA SG11201504342SA SG11201504342SA SG 11201504342S A SG11201504342S A SG 11201504342SA SG 11201504342S A SG11201504342S A SG 11201504342SA SG 11201504342S A SG11201504342S A SG 11201504342SA SG 11201504342S A SG11201504342S A SG 11201504342SA
Authority
SG
Singapore
Prior art keywords
lower domes
quartz upper
quartz
domes
Prior art date
Application number
SG11201504342SA
Other languages
English (en)
Inventor
Anzhong Chang
Paul Brillhart
Mehmet Tugrul Samir
Anh N Nguyen
Kailash Kiran Patalay
Surajit Kumar
Steve Aboagye
David K Carlson
Satheesh Kuppurao
Joseph M Ranish
Oleg Serebryanov
Dongming Iu
Shu-Kwan Lau
Zouming Zhu
Herman Diniz
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201504342SA publication Critical patent/SG11201504342SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201504342SA 2013-01-16 2013-12-18 Quartz upper and lower domes SG11201504342SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361753410P 2013-01-16 2013-01-16
US201361780447P 2013-03-13 2013-03-13
PCT/US2013/076295 WO2014113179A1 (en) 2013-01-16 2013-12-18 Quartz upper and lower domes

Publications (1)

Publication Number Publication Date
SG11201504342SA true SG11201504342SA (en) 2015-08-28

Family

ID=51165213

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201504342SA SG11201504342SA (en) 2013-01-16 2013-12-18 Quartz upper and lower domes
SG10201708105UA SG10201708105UA (en) 2013-01-16 2013-12-18 Quartz upper and lower domes

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201708105UA SG10201708105UA (en) 2013-01-16 2013-12-18 Quartz upper and lower domes

Country Status (7)

Country Link
US (2) US9768043B2 (ja)
JP (2) JP6388876B2 (ja)
KR (1) KR20150108392A (ja)
CN (3) CN104885192B (ja)
SG (2) SG11201504342SA (ja)
TW (1) TWI638070B (ja)
WO (1) WO2014113179A1 (ja)

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IT201600099783A1 (it) 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati
CN110121763B (zh) 2017-02-23 2023-12-26 株式会社国际电气 基板处理装置、半导体装置的制造方法及存储介质
US11935732B2 (en) * 2018-01-29 2024-03-19 Applied Materials, Inc. Process kit geometry for particle reduction in PVD processes
CN214848503U (zh) * 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
JP2021068871A (ja) * 2019-10-28 2021-04-30 株式会社Sumco エピタキシャル成長装置およびエピタキシャルウェーハの製造方法
CN110981172A (zh) * 2019-12-21 2020-04-10 张忠恕 一种外延工艺石英焊件组件及其加工工艺
US20220056583A1 (en) * 2020-08-18 2022-02-24 Globalwafers Co., Ltd. Window for chemical vapor deposition systems and related methods
EP4337814A1 (en) * 2021-05-11 2024-03-20 Applied Materials, Inc. Gas injector for epitaxy and cvd chamber
KR20230012803A (ko) * 2021-07-16 2023-01-26 주성엔지니어링(주) 기판처리장치용 상부돔 및 기판처리장치
CN115020303B (zh) * 2022-08-09 2022-11-04 北京屹唐半导体科技股份有限公司 晶圆的热处理装置

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Also Published As

Publication number Publication date
CN104885192B (zh) 2018-03-27
US9768043B2 (en) 2017-09-19
WO2014113179A1 (en) 2014-07-24
SG10201708105UA (en) 2017-11-29
JP2019009453A (ja) 2019-01-17
JP2016509751A (ja) 2016-03-31
TW201432103A (zh) 2014-08-16
JP6388876B2 (ja) 2018-09-12
TWI638070B (zh) 2018-10-11
US20180005856A1 (en) 2018-01-04
CN104885192A (zh) 2015-09-02
KR20150108392A (ko) 2015-09-25
US20140199056A1 (en) 2014-07-17
CN108364889A (zh) 2018-08-03
CN107658245A (zh) 2018-02-02

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