SG11201501005YA - Vibrating device and manufacturing method therefor - Google Patents

Vibrating device and manufacturing method therefor

Info

Publication number
SG11201501005YA
SG11201501005YA SG11201501005YA SG11201501005YA SG11201501005YA SG 11201501005Y A SG11201501005Y A SG 11201501005YA SG 11201501005Y A SG11201501005Y A SG 11201501005YA SG 11201501005Y A SG11201501005Y A SG 11201501005YA SG 11201501005Y A SG11201501005Y A SG 11201501005YA
Authority
SG
Singapore
Prior art keywords
manufacturing
method therefor
vibrating device
vibrating
therefor
Prior art date
Application number
SG11201501005YA
Other languages
English (en)
Inventor
Keiichi Umeda
Takehiko Kishi
Toshio Nishimura
Takashi Hase
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of SG11201501005YA publication Critical patent/SG11201501005YA/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/21Crystal tuning forks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02244Details of microelectro-mechanical resonators
    • H03H9/02433Means for compensation or elimination of undesired effects
    • H03H9/02448Means for compensation or elimination of undesired effects of temperature influence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2468Tuning fork resonators
    • H03H9/2478Single-Ended Tuning Fork resonators
    • H03H9/2489Single-Ended Tuning Fork resonators with more than two fork tines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
SG11201501005YA 2012-09-13 2013-08-30 Vibrating device and manufacturing method therefor SG11201501005YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012201878 2012-09-13
PCT/JP2013/073323 WO2014042020A2 (fr) 2012-09-13 2013-08-30 Dispositif oscillant et procédé de fabrication correspondant

Publications (1)

Publication Number Publication Date
SG11201501005YA true SG11201501005YA (en) 2015-05-28

Family

ID=50278804

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201501005YA SG11201501005YA (en) 2012-09-13 2013-08-30 Vibrating device and manufacturing method therefor

Country Status (4)

Country Link
US (1) US9553561B2 (fr)
JP (1) JP6003994B2 (fr)
SG (1) SG11201501005YA (fr)
WO (1) WO2014042020A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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JP6245265B2 (ja) * 2013-09-20 2017-12-13 株式会社村田製作所 振動装置及びその製造方法
US9705470B1 (en) * 2014-02-09 2017-07-11 Sitime Corporation Temperature-engineered MEMS resonator
JP6331702B2 (ja) * 2014-05-29 2018-05-30 セイコーエプソン株式会社 電子デバイス、電子機器および移動体
WO2016051025A1 (fr) * 2014-10-03 2016-04-07 Teknologian Tutkimuskeskus Vtt Oy Résonateur à plaque de compensation thermique
CN107005223B (zh) * 2014-10-03 2021-06-04 芬兰国家技术研究中心股份公司 温度补偿梁谐振器
WO2016098868A1 (fr) * 2014-12-17 2016-06-23 株式会社村田製作所 Vibreur piézoélectrique et dispositif piézoélectrique vibrant
CN108093679B (zh) * 2015-06-19 2022-03-04 芯时光公司 微机电谐振器
JP6628212B2 (ja) * 2015-11-24 2020-01-08 株式会社村田製作所 共振装置及びその製造方法
CN109075766B (zh) * 2016-05-25 2022-04-19 株式会社村田制作所 谐振器和谐振装置
US10676349B1 (en) 2016-08-12 2020-06-09 Sitime Corporation MEMS resonator
CN110663176A (zh) * 2017-05-25 2020-01-07 株式会社村田制作所 谐振器以及谐振装置
KR102452948B1 (ko) * 2017-07-18 2022-10-11 삼성전자주식회사 미소 기계식 공진기 및 이를 포함하는 공진기 시스템
JP6528878B2 (ja) * 2018-03-22 2019-06-12 セイコーエプソン株式会社 電子デバイス、電子機器および移動体
JP2021005783A (ja) * 2019-06-26 2021-01-14 セイコーエプソン株式会社 振動片、電子機器、および移動体
FI129591B (en) * 2020-11-06 2022-05-13 Kyocera Tikitin Oy MEMS RESONATOR WITH HIGH QUALITY AND ITS USE
JP2022086056A (ja) * 2020-11-30 2022-06-09 エスアイアイ・クリスタルテクノロジー株式会社 圧電振動片、圧電振動子、発振器、および圧電振動片の製造方法

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US4358745A (en) 1981-03-16 1982-11-09 International Business Machines Corporation Semiconductor surface acoustic wave device
US4459394A (en) 1981-12-30 1984-07-10 The Standard Oil Company Preparation of nylon polyamide with cobalt salt
JP3512968B2 (ja) * 1996-04-11 2004-03-31 株式会社日本自動車部品総合研究所 半導体装置の製造方法
JP4404218B2 (ja) 2006-03-29 2010-01-27 セイコーエプソン株式会社 音叉振動子およびその製造方法
CH700716B1 (fr) * 2006-10-09 2010-10-15 Suisse Electronique Microtech Résonateur en silicium de type diapason.
US7673512B2 (en) * 2006-10-30 2010-03-09 Sony Corporation Angular velocity sensor and electronic device
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EP2347506B1 (fr) 2008-10-14 2013-01-09 Nxp B.V. Résonateur piézorésistif mems en forme de cadre
US8354332B2 (en) 2008-11-26 2013-01-15 Georgia Tech Research Corporation Methods of forming micro-electromichanical resonators having boron-doped resonator bodies containing eutectic alloys
US8061013B2 (en) 2008-11-26 2011-11-22 Georgia Tech Research Corporation Micro-electromechanical resonators having electrically-trimmed resonator bodies therein and methods of fabricating same using joule heating
JP2012105044A (ja) * 2010-11-10 2012-05-31 Seiko Epson Corp 振動デバイスおよび電子機器
FI126586B (fi) * 2011-02-17 2017-02-28 Teknologian Tutkimuskeskus Vtt Oy Uudet mikromekaaniset laitteet
JP5974629B2 (ja) * 2012-05-23 2016-08-23 セイコーエプソン株式会社 振動片、振動片の製造方法、角速度センサー、電子機器、移動体
JP6292229B2 (ja) * 2013-05-13 2018-03-14 株式会社村田製作所 振動装置
JP6094671B2 (ja) * 2013-05-13 2017-03-15 株式会社村田製作所 振動装置
SG11201508861WA (en) * 2013-05-13 2015-11-27 Murata Manufacturing Co Vibrating device
JP6482169B2 (ja) * 2013-07-19 2019-03-13 セイコーエプソン株式会社 振動片、振動子、発振器、電子機器及び移動体
JP6132022B2 (ja) * 2013-08-21 2017-05-24 株式会社村田製作所 圧電共振子及びその製造方法
JP6245265B2 (ja) * 2013-09-20 2017-12-13 株式会社村田製作所 振動装置及びその製造方法
CN105874710B (zh) * 2014-01-24 2018-09-18 株式会社村田制作所 压电振子以及压电振动装置

Also Published As

Publication number Publication date
US9553561B2 (en) 2017-01-24
WO2014042020A2 (fr) 2014-03-20
US20150180449A1 (en) 2015-06-25
WO2014042020A3 (fr) 2014-05-08
JPWO2014042020A1 (ja) 2016-08-18
JP6003994B2 (ja) 2016-10-05

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