SG107150A1 - Advanced illumination system for use in microlithography - Google Patents

Advanced illumination system for use in microlithography

Info

Publication number
SG107150A1
SG107150A1 SG200304444A SG200304444A SG107150A1 SG 107150 A1 SG107150 A1 SG 107150A1 SG 200304444 A SG200304444 A SG 200304444A SG 200304444 A SG200304444 A SG 200304444A SG 107150 A1 SG107150 A1 SG 107150A1
Authority
SG
Singapore
Prior art keywords
microlithography
illumination system
advanced illumination
advanced
illumination
Prior art date
Application number
SG200304444A
Other languages
English (en)
Inventor
Oskotsky Mark
Coston Scott
Augustyn Walter
Ryzhikov Lev
Tsacoyeanes James
Original Assignee
Asml Holding Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Holding Nv filed Critical Asml Holding Nv
Publication of SG107150A1 publication Critical patent/SG107150A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70183—Zoom systems for adjusting beam diameter

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Microscoopes, Condenser (AREA)
SG200304444A 2002-06-11 2003-06-11 Advanced illumination system for use in microlithography SG107150A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/166,062 US6813003B2 (en) 2002-06-11 2002-06-11 Advanced illumination system for use in microlithography

Publications (1)

Publication Number Publication Date
SG107150A1 true SG107150A1 (en) 2004-11-29

Family

ID=29583729

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200304444A SG107150A1 (en) 2002-06-11 2003-06-11 Advanced illumination system for use in microlithography

Country Status (7)

Country Link
US (3) US6813003B2 (fr)
EP (1) EP1372034A3 (fr)
JP (2) JP2004031949A (fr)
KR (1) KR100818320B1 (fr)
CN (1) CN100407053C (fr)
SG (1) SG107150A1 (fr)
TW (1) TWI317855B (fr)

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* Cited by examiner, † Cited by third party
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US6813003B2 (en) * 2002-06-11 2004-11-02 Mark Oskotsky Advanced illumination system for use in microlithography
US6775069B2 (en) * 2001-10-18 2004-08-10 Asml Holding N.V. Advanced illumination system for use in microlithography
US7079321B2 (en) * 2001-10-18 2006-07-18 Asml Holding N.V. Illumination system and method allowing for varying of both field height and pupil
US7006295B2 (en) * 2001-10-18 2006-02-28 Asml Holding N.V. Illumination system and method for efficiently illuminating a pattern generator
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
JP2005175383A (ja) * 2003-12-15 2005-06-30 Canon Inc 露光装置、アライメント方法、及び、デバイスの製造方法
JP2005294840A (ja) * 2004-03-31 2005-10-20 Asml Holding Nv フィールド高さ及び瞳の変更を許容する照明システム及び方法
US7400381B2 (en) * 2004-05-26 2008-07-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070046917A1 (en) * 2005-08-31 2007-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method that compensates for reticle induced CDU
JP2009514028A (ja) * 2005-10-27 2009-04-02 イェール ユニヴァーシティー エバネッセント場の照明のための光学システム
US7532403B2 (en) * 2006-02-06 2009-05-12 Asml Holding N.V. Optical system for transforming numerical aperture
EP2383330A1 (fr) 2006-03-31 2011-11-02 Novozymes A/S Composition enzymatique liquide stabilisée
US7839487B2 (en) * 2006-04-13 2010-11-23 Asml Holding N.V. Optical system for increasing illumination efficiency of a patterning device
CN101587302B (zh) * 2006-11-03 2011-10-12 上海微电子装备有限公司 一种光刻照明系统
US20080259304A1 (en) * 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method
CN101320216B (zh) * 2008-06-18 2010-06-09 上海微电子装备有限公司 一种微光刻照明光瞳的整形结构
CN101408285B (zh) * 2008-08-14 2010-06-02 上海微电子装备有限公司 一种产生连续可变光瞳的照明装置
US9068916B2 (en) * 2010-03-15 2015-06-30 Bio-Rad Laboratories, Inc. Microassembled imaging flow cytometer
CN103293863B (zh) * 2012-02-24 2015-11-18 上海微电子装备有限公司 一种光刻照明系统
KR101382921B1 (ko) 2012-06-28 2014-04-08 엘지이노텍 주식회사 카메라, 그의 이미지 센서 및 동작 방법
CN103100712A (zh) * 2013-01-23 2013-05-15 西安铂力特激光成形技术有限公司 多工位平场聚焦透镜更换装置
CN103092006B (zh) 2013-01-25 2015-02-18 中国科学院上海光学精密机械研究所 光刻照明系统
CN105026097B (zh) 2013-03-12 2017-08-29 应用材料公司 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状
CN103135369B (zh) * 2013-03-21 2014-11-26 中国科学院上海光学精密机械研究所 光刻照明模式产生装置
CN103309175B (zh) * 2013-06-07 2015-06-17 中国科学院上海光学精密机械研究所 光刻机照明系统的级联微透镜阵列的对准装置和对准方法
CN103399463B (zh) 2013-07-19 2015-07-29 中国科学院上海光学精密机械研究所 投影光刻机照明装置和使用方法
JP6282742B2 (ja) * 2013-09-09 2018-02-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置及びそのような装置における光学波面変形を補正する方法
CN104049473B (zh) * 2014-07-01 2016-01-20 中国科学院长春光学精密机械与物理研究所 一种径向抽拉式结构的物镜保护窗口

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US5383000A (en) * 1992-11-24 1995-01-17 General Signal Corporation Partial coherence varier for microlithographic system
US5675401A (en) * 1994-06-17 1997-10-07 Carl-Zeiss-Stiftung Illuminating arrangement including a zoom objective incorporating two axicons
EP1079277A1 (fr) * 1995-05-24 2001-02-28 Svg Lithography Systems, Inc. Appareil d'exposition pour la photolithographie
US6285443B1 (en) * 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
US6307682B1 (en) * 2000-02-16 2001-10-23 Silicon Valley Group, Inc. Zoom illumination system for use in photolithography
EP1248151A2 (fr) * 2001-04-04 2002-10-09 Svg Lithography Systems, Inc. Réglage de largeur de trait par compensation des erreurs du masque d'un dispositif d'exposition aux uv profonds par balayage
US20030076679A1 (en) * 2001-10-18 2003-04-24 Asml Us, Inc. Advanced illumination system for use in microlithography

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KR20020046932A (ko) * 2000-12-14 2002-06-21 시마무라 테루오 콘덴서 광학계, 및 그 광학계를 구비한 조명 광학 장치그리고 노광 장치
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US6813003B2 (en) * 2002-06-11 2004-11-02 Mark Oskotsky Advanced illumination system for use in microlithography
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US7006295B2 (en) * 2001-10-18 2006-02-28 Asml Holding N.V. Illumination system and method for efficiently illuminating a pattern generator

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931830A (en) * 1988-08-12 1990-06-05 Nikon Corporation Projection exposure apparatus
US5383000A (en) * 1992-11-24 1995-01-17 General Signal Corporation Partial coherence varier for microlithographic system
US6285443B1 (en) * 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
US5675401A (en) * 1994-06-17 1997-10-07 Carl-Zeiss-Stiftung Illuminating arrangement including a zoom objective incorporating two axicons
EP1079277A1 (fr) * 1995-05-24 2001-02-28 Svg Lithography Systems, Inc. Appareil d'exposition pour la photolithographie
US6307682B1 (en) * 2000-02-16 2001-10-23 Silicon Valley Group, Inc. Zoom illumination system for use in photolithography
EP1248151A2 (fr) * 2001-04-04 2002-10-09 Svg Lithography Systems, Inc. Réglage de largeur de trait par compensation des erreurs du masque d'un dispositif d'exposition aux uv profonds par balayage
US20030076679A1 (en) * 2001-10-18 2003-04-24 Asml Us, Inc. Advanced illumination system for use in microlithography

Also Published As

Publication number Publication date
JP5529698B2 (ja) 2014-06-25
TW200403542A (en) 2004-03-01
US20040263821A1 (en) 2004-12-30
EP1372034A2 (fr) 2003-12-17
US20070146674A1 (en) 2007-06-28
JP2004031949A (ja) 2004-01-29
CN1474235A (zh) 2004-02-11
US20030227609A1 (en) 2003-12-11
EP1372034A3 (fr) 2005-06-22
US6813003B2 (en) 2004-11-02
CN100407053C (zh) 2008-07-30
JP2011009780A (ja) 2011-01-13
KR20040026099A (ko) 2004-03-27
KR100818320B1 (ko) 2008-04-01
US7187430B2 (en) 2007-03-06
TWI317855B (en) 2009-12-01

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