SG106056A1 - Waveguide for microwave excitation of plasma in an ion beam guide - Google Patents

Waveguide for microwave excitation of plasma in an ion beam guide

Info

Publication number
SG106056A1
SG106056A1 SG200104510A SG200104510A SG106056A1 SG 106056 A1 SG106056 A1 SG 106056A1 SG 200104510 A SG200104510 A SG 200104510A SG 200104510 A SG200104510 A SG 200104510A SG 106056 A1 SG106056 A1 SG 106056A1
Authority
SG
Singapore
Prior art keywords
waveguide
plasma
ion beam
beam guide
microwave excitation
Prior art date
Application number
SG200104510A
Other languages
English (en)
Inventor
Maurice Benveniste Victor
Ye John
Frank Divergilio William
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of SG106056A1 publication Critical patent/SG106056A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
SG200104510A 2000-07-25 2001-07-25 Waveguide for microwave excitation of plasma in an ion beam guide SG106056A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/625,718 US6541781B1 (en) 2000-07-25 2000-07-25 Waveguide for microwave excitation of plasma in an ion beam guide

Publications (1)

Publication Number Publication Date
SG106056A1 true SG106056A1 (en) 2004-09-30

Family

ID=24507265

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200104510A SG106056A1 (en) 2000-07-25 2001-07-25 Waveguide for microwave excitation of plasma in an ion beam guide

Country Status (7)

Country Link
US (1) US6541781B1 (de)
EP (1) EP1176623B1 (de)
JP (1) JP4947402B2 (de)
KR (1) KR100602319B1 (de)
DE (1) DE60134091D1 (de)
SG (1) SG106056A1 (de)
TW (1) TW527617B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6885014B2 (en) 2002-05-01 2005-04-26 Axcelis Technologies, Inc. Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
US6703628B2 (en) 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
JP3869680B2 (ja) 2001-05-29 2007-01-17 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオン注入装置
JP3840108B2 (ja) * 2001-12-27 2006-11-01 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオンビーム処理方法及び処理装置
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
US7459692B2 (en) * 2004-11-19 2008-12-02 Varian Semiconductor Equipment Associates, Inc. Electron confinement inside magnet of ion implanter
US7427751B2 (en) * 2006-02-15 2008-09-23 Varian, Inc. High sensitivity slitless ion source mass spectrometer for trace gas leak detection
CA2725544C (en) * 2008-05-30 2017-12-19 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University A radio-frequency-free hybrid electrostatic/magnetostatic cell for transporting, trapping, and dissociating ions in mass spectrometers
US9305760B2 (en) 2012-08-16 2016-04-05 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Electron source for an RF-free electronmagnetostatic electron-induced dissociation cell and use in a tandem mass spectrometer
EP2907155A4 (de) * 2012-10-12 2016-07-13 Dh Technologies Dev Pte Ltd Ionenführung für massenspektrometrie
US9576767B2 (en) 2013-05-15 2017-02-21 Indian Institute Of Technology Kanpur Focused ion beam systems and methods of operation
US9299536B2 (en) * 2013-10-17 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Wide metal-free plasma flood gun
JP6207418B2 (ja) * 2014-02-10 2017-10-04 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置、ビーム平行化器、及びビーム平行化方法
CN105448371A (zh) * 2015-11-20 2016-03-30 中国电子科技集团公司第四十八研究所 一种静电场加速的高能离子注入机的高压防护及射线屏蔽系统
US9734982B1 (en) * 2016-05-24 2017-08-15 Nissin Ion Equipment Co., Ltd. Beam current density distribution adjustment device and ion implanter

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Publication number Priority date Publication date Assignee Title
EP0283519B1 (de) * 1986-09-29 1994-04-13 Nippon Telegraph And Telephone Corporation Ionenerzeugende apparatur, dünnschichtbildende vorrichtung unter verwendung der ionenerzeugenden apparatur und ionenquelle
EP0477906B1 (de) * 1990-09-28 1996-12-11 Hitachi, Ltd. Plasma-Bearbeitungsgerät unter Verwendung eines mittels Mikrowellen erzeugten Plasmas
WO2000007030A1 (en) * 1998-07-28 2000-02-10 Varian Semiconductor Equipment Associates, Inc. Particle beam current monitoring technique
EP1189493A2 (de) * 1997-05-22 2002-03-20 Canon Kabushiki Kaisha Plasmabehandlungsvorrichtung mit Mikrowellenapplikation und ringförmigem Wellenleiter sowie Behandlungsverfahren
EP0764969B1 (de) * 1995-09-21 2002-12-04 Canon Kabushiki Kaisha Mikrowellen-Plasmabearbeitungsgerät und Mikrowellen-Plasmabearbeitungsverfahren

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US4383177A (en) 1980-12-24 1983-05-10 International Business Machines Corporation Multipole implantation-isotope separation ion beam source
US5433788A (en) 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
KR880013424A (ko) * 1987-04-08 1988-11-30 미타 가츠시게 플라즈머 장치
US5370765A (en) 1989-03-09 1994-12-06 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source and method of operation
US5203960A (en) * 1989-03-09 1993-04-20 Applied Microwave Plasma Concepts, Inc. Method of operation of electron cyclotron resonance plasma source
US5032202A (en) * 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
US5081398A (en) * 1989-10-20 1992-01-14 Board Of Trustees Operating Michigan State University Resonant radio frequency wave coupler apparatus using higher modes
US5206516A (en) 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
FR2718568B1 (fr) * 1994-04-06 1996-07-05 France Telecom Procédé d'implantation haute énergie à partir d'un implanteur de type faible ou moyen courant et dispositifs correspondants.
JP3123735B2 (ja) * 1995-04-28 2001-01-15 株式会社日立製作所 イオンビーム処理装置
US5554857A (en) 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
US5686796A (en) * 1995-12-20 1997-11-11 International Business Machines Corporation Ion implantation helicon plasma source with magnetic dipoles
JPH09180662A (ja) 1995-12-27 1997-07-11 Hitachi Ltd イオンビーム装置
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
US5975014A (en) * 1996-07-08 1999-11-02 Asm Japan K.K. Coaxial resonant multi-port microwave applicator for an ECR plasma source
US5707452A (en) * 1996-07-08 1998-01-13 Applied Microwave Plasma Concepts, Inc. Coaxial microwave applicator for an electron cyclotron resonance plasma source
US5703375A (en) 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
GB9710380D0 (en) * 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
US6130436A (en) * 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283519B1 (de) * 1986-09-29 1994-04-13 Nippon Telegraph And Telephone Corporation Ionenerzeugende apparatur, dünnschichtbildende vorrichtung unter verwendung der ionenerzeugenden apparatur und ionenquelle
EP0477906B1 (de) * 1990-09-28 1996-12-11 Hitachi, Ltd. Plasma-Bearbeitungsgerät unter Verwendung eines mittels Mikrowellen erzeugten Plasmas
EP0764969B1 (de) * 1995-09-21 2002-12-04 Canon Kabushiki Kaisha Mikrowellen-Plasmabearbeitungsgerät und Mikrowellen-Plasmabearbeitungsverfahren
EP1189493A2 (de) * 1997-05-22 2002-03-20 Canon Kabushiki Kaisha Plasmabehandlungsvorrichtung mit Mikrowellenapplikation und ringförmigem Wellenleiter sowie Behandlungsverfahren
WO2000007030A1 (en) * 1998-07-28 2000-02-10 Varian Semiconductor Equipment Associates, Inc. Particle beam current monitoring technique

Also Published As

Publication number Publication date
EP1176623B1 (de) 2008-05-21
US6541781B1 (en) 2003-04-01
KR20020009504A (ko) 2002-02-01
TW527617B (en) 2003-04-11
JP4947402B2 (ja) 2012-06-06
JP2002110080A (ja) 2002-04-12
KR100602319B1 (ko) 2006-07-14
EP1176623A3 (de) 2005-06-15
EP1176623A2 (de) 2002-01-30
DE60134091D1 (de) 2008-07-03

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