SG105545A1 - Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method - Google Patents

Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method

Info

Publication number
SG105545A1
SG105545A1 SG200202591A SG200202591A SG105545A1 SG 105545 A1 SG105545 A1 SG 105545A1 SG 200202591 A SG200202591 A SG 200202591A SG 200202591 A SG200202591 A SG 200202591A SG 105545 A1 SG105545 A1 SG 105545A1
Authority
SG
Singapore
Prior art keywords
manufacturing
voltage measuring
electrical test
semiconductor device
device substrate
Prior art date
Application number
SG200202591A
Inventor
Hiroki Masaaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG105545A1 publication Critical patent/SG105545A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG200202591A 2001-05-15 2002-05-02 Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method SG105545A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001145060 2001-05-15
JP2001223647 2001-07-24

Publications (1)

Publication Number Publication Date
SG105545A1 true SG105545A1 (en) 2004-08-27

Family

ID=26615116

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200202591A SG105545A1 (en) 2001-05-15 2002-05-02 Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method
SG200507157-6A SG132529A1 (en) 2001-05-15 2002-05-02 Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200507157-6A SG132529A1 (en) 2001-05-15 2002-05-02 Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method

Country Status (5)

Country Link
KR (1) KR100873181B1 (en)
CN (1) CN1274014C (en)
MY (1) MY132660A (en)
SG (2) SG105545A1 (en)
TW (1) TW573128B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4394980B2 (en) * 2004-01-30 2010-01-06 日本電産リード株式会社 Substrate inspection apparatus and substrate inspection method
KR101270180B1 (en) 2004-01-30 2013-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 An inspection apparatus, inspenction method, and method for manufacturing a semiconductor device
US7466157B2 (en) * 2004-02-05 2008-12-16 Formfactor, Inc. Contactless interfacing of test signals with a device under test
TWI391685B (en) 2009-10-16 2013-04-01 Ind Tech Res Inst Station for detecting winding products and method for detecting inter-turn short-circuit
TWI481300B (en) * 2009-12-31 2015-04-11 Univ Tsinghua Organic electroluminescent devices and their test methods
CN103649764B (en) 2011-07-15 2017-06-09 奥宝科技股份有限公司 Non-mechanical activation signal measurement apparatus and its signal measurement method
WO2014013571A1 (en) * 2012-07-18 2014-01-23 トヨタ自動車株式会社 Apparatus, system, and method for inspecting semiconductor device, and method for manufacturing inspected semiconductor device
KR102043179B1 (en) 2013-02-18 2019-11-12 삼성디스플레이 주식회사 Detecting method of defect of barrier film and detecting apparatus of defect of barrier film for flat panel display device
TWI730591B (en) * 2020-01-15 2021-06-11 興城科技股份有限公司 Inspection equipment for glass substrate and method thereof
KR102410310B1 (en) * 2021-05-03 2022-06-22 (주) 엔지온 Measuring unit of electrical characteristic of semiconductor an apparatus for measuring electrical characteristic of semiconductor and a method for using the same
US12000866B2 (en) 2022-04-20 2024-06-04 Envigth Co., Ltd. Detection unit, semiconductor film layer inspection apparatus including the same, and semiconductor film layer inspection method using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428300A (en) * 1993-04-26 1995-06-27 Telenix Co., Ltd. Method and apparatus for testing TFT-LCD
JP2001133487A (en) * 1999-11-01 2001-05-18 Mitsubishi Heavy Ind Ltd Potential sensor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2803943B2 (en) * 1992-10-21 1998-09-24 アルプス電気株式会社 Non-contact power supply
JPH06349913A (en) * 1993-06-14 1994-12-22 Fujitsu Ltd Non-contact monitoring method for burn-in test
JP3269225B2 (en) * 1993-11-17 2002-03-25 横河電機株式会社 Print coil tester
JP2909807B2 (en) * 1995-11-22 1999-06-23 セイコーインスツルメンツ株式会社 Superconducting quantum interference device magnetometer and non-destructive inspection device
JP3328553B2 (en) * 1997-07-25 2002-09-24 松下電器産業株式会社 Circuit board inspection equipment
JP4075138B2 (en) * 1998-06-05 2008-04-16 凸版印刷株式会社 Non-contact IC card inspection device and inspection method
JP2000258482A (en) * 1999-03-08 2000-09-22 Toshiba Corp Frequency inspection device
JP2001194405A (en) * 2000-01-07 2001-07-19 Oht Kk Probe for inspecting substrate and inspection/method for substrate
KR100324138B1 (en) * 2000-02-07 2002-02-20 은탁 Inspection apparatus and method adapted to a scanning technique employing a capacitance gap sensor probe

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428300A (en) * 1993-04-26 1995-06-27 Telenix Co., Ltd. Method and apparatus for testing TFT-LCD
JP2001133487A (en) * 1999-11-01 2001-05-18 Mitsubishi Heavy Ind Ltd Potential sensor

Also Published As

Publication number Publication date
KR20020087376A (en) 2002-11-22
CN1274014C (en) 2006-09-06
MY132660A (en) 2007-10-31
CN1387246A (en) 2002-12-25
KR100873181B1 (en) 2008-12-10
SG132529A1 (en) 2007-06-28
TW573128B (en) 2004-01-21

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