CN1274014C

CN1274014C - Voltage metering method, electric test method and device, and method for mfg. semiconductor device and device substrate

Info

Publication number: CN1274014C
Application number: CNB021193592A
Authority: CN
Inventors: 广木正明
Original assignee: Semiconductor Energy Laboratory Co Ltd
Current assignee: Semiconductor Energy Laboratory Co Ltd
Priority date: 2001-05-15
Filing date: 2002-05-15
Publication date: 2006-09-06
Anticipated expiration: 2022-05-15
Also published as: MY132660A; SG132529A1; KR100873181B1; TW573128B; SG105545A1; CN1387246A; KR20020087376A

Abstract

The present invention establishes a simple inspection method dispensing with erection of a prober on wiring, and to provide an inspection device using the inspection method. A primary coil possessed by an inspection substrate and a secondary coil possessed by an OLED panel are mutually superposed at a fixed interval, and an alternating-current signal is inputted into the primary coil, to thereby generate an electromotive force in the secondary coil by electromagnetic induction. Pixels possessed by the OLED panel are operated by using the electromotive force, and a pixel electrode and an inspection electrode are mutually superposed at a fixed interval. An alternating voltage generated in the inspection electrode is monitored, to thereby detect a defective spot. In addition, the operation state of each pixel may be confirmed by monitoring the alternating voltage generated in the inspection electrode, while changing the position of the inspection electrode.

Description

The voltage measurement method of semiconductor device

Technical field

The present invention relates to voltage measurement method, be used to read by operation each pixel that semiconductor device had and be applied to a magnitude of voltage on the pixel capacitors, also relate to pixel region work of this voltage measurement method test method whether normally.The present invention be more particularly directed to a kind of contactless voltage measurement method and electric test method, and a kind of contactless electric test device that adopts this method.The invention still further relates to the manufacture method of semiconductor device, it comprises the test program that adopts this method of testing, also relates to a kind of semiconductor device made from this method, semi-conductor device manufacturing method.The invention still further relates to a kind of manufacture method of device substrate, it comprises the test program that adopts this method of testing.

The present invention also relates to the method for measuring voltage in a kind of oled panel simultaneously, this panel has the organic luminescent device (OLED) that is sealed between substrate and the cover, before forming OLED, operate pixel, can be used to read the magnitude of voltage that is applied on the pixel capacitors, also relate to described voltage measurement method and test whether normally method of this pixel region work.The present invention be more particularly directed to a kind of contactless electric test device of a kind of contactless electric test method and this method of employing.

IC or the like will be installed in specification and comprise that the oled panel of a controller is called an OLED module.Simultaneously oled panel and OLED module are called a luminescent device altogether.

Prior art

In recent years, the technology of formation TFT has had significant progress on a substrate.Development has proceeded to already and can be applicable to the active matrix electronic console.Particularly adopt the TFT of polysilicon membrane to have higher field effect mobility (also being called animal migration) than the TFT that adopts amorphous silicon membrane, thereby can high speed operation.Therefore, normally by can finishing by a control circuit that is formed on the same substrate with pixel of being located at that drive circuit beyond the substrate carries out to the control of pixel.

This active matrix electronic console has many advantages and value, and this so that reduce manufacturing cost, dwindles the electronic console size comprising various circuit and element are produced on the same substrate, improves output and saves production capacity.

In the middle of electronic console, the research of active matrix light emitting device with OLED light-emitting component there has been positive progress.

Naturally luminous OLED has high definition, do not dwindled thickness ideally owing to do not need required bias light in the LCD (LCD), and the visual angle is unrestricted.Therefore, the luminescent device that adopts OLED as an alternative the display device of CRT and LCD caused people's attention.

OLED has a layer that contains organic compound (luminous organic material) (below be called organic luminous layer), applies a battery and just can obtain electroluminescence, an anode layer and a cathode layer.In specification, be located at the anode of an OLED and each layer between the negative electrode all is defined as an organic luminous layer.Organic luminous layer specifically comprises a luminescent layer, a hole injection layer, an electron injecting layer, a hole transporting layer and an electron supplying layer.The electroluminescence of organic compound comprises luminous (fluorescence) and luminous (phosphorescence) when three grades of energized conditions return to ground state when the single-stage energized condition returns to ground state.

Organic luminous layer can be owing to warm, light, humidity and oxygen or the like accelerated deterioration.According to manufacturing process, often all be in a pixel region, after forming interconnection and TFT, just to form OLED when making active matrix light emitting device than higher treatment temperature.

After forming OLED, the substrate that the mode that can not be exposed to extraneous air according to OLED will have OLED (oled panel) and a cover is bonded to together, can seal (encapsulation) with a seal then.

After the sealing of strengthening being hedged off from the outer world by technologies such as encapsulation, connect a connector (FPC, TAB or the like), be connected by being formed between terminal that element on the substrate or circuit stretch out and the external signal terminal.So just made an active matrix light emitting device.

In this active matrix light emitting device, the voltage that is applied on the organic luminous layer from the pair of electrodes of OLED is to be controlled by the TFT that is arranged on each pixel.Therefore, if occur certain problem (fault point) on one point, the TFT that this pixel region has just can not play switch element be used for cut off or connection that short circuit is mutual, predetermined voltage can not be applied on the organic luminous layer that this OLED has.In this case, pixel just can not show according to required tonal gradation.

Before this active matrix light emitting device, dropped in the active matrix liquid crystal display of batch process, interconnection and TFT formed in a pixel region before finishing a LCD, liquid crystal is filled in the panel (liquid crystal panel) with a pixel region and has between the substrate of a converse electrode.Store charge on the electric capacity that each pixel had then.Measure the quantity of electric charge by pixel ground one by one and carry out test, to determine in this pixel region zero defect being arranged.

Yet, in many cases, have two above TFT on each pixel of this luminescent device.Sometimes OLED electrode (pixel capacitors) connects together by TFT with electric capacity.In this case, be stored in interconnection and all TFT that the quantity of electric charge on the electric capacity also is difficult between testing capacitor and the pixel capacitors whether defective is arranged even measure.

Simultaneously,, just need on the terminal of oled panel or interconnection point, use a kind of accurate plug (probe), so that electric current is flowed or apply voltage if before oled panel is connected to connector, electric operation is tested.Yet, directly using probe may on interconnection point or terminal, cause crackle and produce trickle dust on interconnection point or the terminal.The dust that causes in the testing procedure can cause the output of following process to reduce unfriendly.

Might be defined by the actual display of the luminescent device manufacturing of finishing does not have defective.Yet, even for the actual oled panel that forms product as yet,, also need by forming OLED in order to be different from mill run, encapsulation, and connect connector and finish a luminescent device.Under the defective situation of oled panel, can not save time and cost, because form step, caused waste in encapsulation step and the connector Connection Step at OLED.Simultaneously, if but adopt a kind of substrate of repeated segmentation to form oled panel, encapsulation is exactly a kind of waste with the step that is connected connector, can not save time equally and cost.

At the problems referred to above, task of the present invention provides a kind of electric test method (the following method of testing that only is called), it can confirm on the interconnection point of a pixel region or the TFT whether defective is arranged before finishing a luminescent device, help the batch process of active matrix light emitting device, and a kind of electric test device (the following testing apparatus of only being called) that adopts this method of testing is provided.Further task is that a kind of simple method of testing is provided in the manufacturing process of luminescent device, does not need to use probe on interconnection point or terminal, and a kind of testing apparatus that adopts this method of testing is provided.Further task is to provide a kind of method of making semiconductor device with this electric test method, and with the semiconductor device of this manufacture method manufacturing.

The inventor considers and adopts electromagnetic induction non-contiguously the interconnection point that pixel area had of a substrate forming TFT and pixel capacitors (below be called device substrate) to be applied voltage, uses probe above noting be used in.Operate each pixel and apply voltage by interconnection point being applied voltage to pixel capacitors.

In specification, the meaning of operation pixel is that element or interconnection point that this pixel has are applied a voltage, just controls the voltage on this pixel capacitors.

Utilize electrostatic induction to read the magnitude of voltage that imposes on pixel capacitors non-contiguously.Just can determine the mode of operation of each pixel and normal/abnormal according to readout, in other words just whether each pixel operation is normal.In specification, the sort of pixel that voltage can normally offer its pixel capacitors is confirmed as normally.Otherwise the sort of pixel that voltage can not normally offer its pixel capacitors is confirmed as unusually.

Specifically comprise following two kinds of schemes, can adopt one of them.

According to first scheme, prepare a test substrate separately, be used for the test component substrate.Test substrate has primary coil, and has secondary coil as the device substrate of measurand.

Can be by the conductive film composition that is formed on the substrate be formed each former limit and secondary coil.According to the present invention, adopt the coil that does not have magnetic part replace the being magnetic coil of part that a magnetic circuit is provided at the center of former limit and secondary coil at the center.

The secondary coil that primary coil that test substrate had and device substrate are had is overlaid together by fixed intervals.Two terminals that primary coil had are applied an alternating voltage, will between two terminals that secondary coil had, produce an electromagnetic force.

Desirable interval should be very little.As long as this can be controlled at interval, primary coil and secondary coil just should be tried one's best close.

In specification, voltage is applied to a coil and means that voltage is applied between two terminals of this coil.In specification, signal is applied to a coil and means this signal is applied between two terminals that coil has.

Also smoothed subsequently by alternating voltage rectification on device substrate that the electromagnetic force on the secondary coil causes.It is used as direct voltage and is come drive circuit that the operated device substrate had or pixel (below be called supply voltage).Simultaneously, the waveform of the alternating voltage that is produced by the electromotive force on the secondary coil is shaped to desirable waveform by a waveform shaping circuit.This signal voltage is used to drive circuit that the operated device substrate had or pixel (below be called drive signal).The alternating voltage that produces on the secondary coil can be used as a drive signal, the not process shaping in waveform shaping circuit of its waveform.

The voltage or the supply voltage of the drive signal that produces are provided for drive circuit or the pixel that forms on device substrate.Drive signal voltage that is provided or supply voltage make drive circuit or pixel carry out certain action.

Drive signal voltage or supply voltage value determine, when drive circuit or pixel just often, the voltage that is applied on the pixel capacitors that this pixel has is given alternating voltage.

As long as drive signal voltage or supply voltage are provided, the magnitude of voltage that is applied on the pixel capacitors will be affected, and this depends on the operating state of drive circuit or pixel.

Drive signal voltage or supply voltage can only offer the pixel that is formed on the device substrate.In this case, as long as drive signal voltage or supply voltage are provided, the magnitude of voltage that is applied on the pixel capacitors will be affected, and this depends on the operating state of pixel.

Being used for contactless that electrode (test electrode) of reading the voltage that produces on the pixel capacitors overlaps above the pixel capacitors by fixed intervals.This at interval should be very little.As long as can control at interval, pixel capacitors and test electrode just should be tried one's best close.Test substrate can have a test electrode.

Can be subjected to being applied to the influence of the magnitude of voltage on the pixel capacitors at the voltage that produces owing to electrostatic induction on the test electrode.So just can calculate the voltage that is applied on the pixel capacitors according to the potentiometer that produces on the test electrode.Thereby just need not contact and to read the magnitude of voltage that is applied on the pixel capacitors.In addition, utilize the voltage that produces on the test electrode can also grasp the operating state of a pixel.So just might confirm its operating state and determine normal/abnormal.

According to second kind of scheme, prepare a test substrate (first test substrate) separately, the interconnection point that pixel region had to device substrate applies a voltage non-contiguously, also have a test substrate (second test substrate), it utilizes electrostatic induction to read the magnitude of voltage that is applied on the pixel capacitors non-contiguously.

First test substrate has a primary coil, and as the device substrate of tested object a secondary coil is arranged.

By just forming former limit and secondary coil separately to being formed on a conductive film composition on the insulation film.According to the present invention, the center of former limit and secondary coil adopts the coil do not have magnetic part replace being magnetic at the center coil of part that a magnetic circuit is provided.

The secondary coil that primary coil that first test substrate is had and device substrate are had is overlaid together by fixed intervals.Two terminals that primary coil had are applied an alternating voltage, will between two terminals that secondary coil had, produce an electromotive force.

At interval should be very little.As long as this can be controlled at interval, primary coil and secondary coil just should be tried one's best close.

Also smoothed subsequently by alternating voltage rectification on device substrate that the electromagnetic force on the secondary coil causes.It is used as drive circuit or the pixel that direct voltage comes the operated device substrate to be had.Simultaneously, the waveform of the alternating voltage that is produced by the electromotive force on the secondary coil is shaped to desirable waveform by a waveform shaping circuit.It is used as drive circuit or the pixel that drive signal with certain voltage comes the operated device substrate to be had.The alternating voltage that produces on the secondary coil can be used as a drive signal, the not process shaping in waveform shaping circuit of its waveform.

The pixel that drive signal voltage or supply voltage can only offer device substrate and had.In this case, as long as drive signal voltage or supply voltage are provided, the magnitude of voltage that is applied on the pixel capacitors will be affected, and this depends on the operating state of pixel.

On the other hand, second test substrate has an electrode (test electrode), is used for reading out in non-contiguously the voltage that produces on the pixel capacitors.This test electrode overlaps above the pixel capacitors by fixed intervals.This at interval should be very little.As long as can control at interval, pixel capacitors and test electrode just should be tried one's best close.

This active matrix semiconductor device has be arranged to a plurality of pixel capacitors of matrix in pixel region.According to the present invention,, just can repeatedly change position with overlapping one or more pixel capacitors of test electrode by changing the position of second test substrate with respect to device substrate.Specifically, if rotate test electrode being parallel on the plane of device substrate, just can change and the position of the pixel capacitors that test electrode is overlapping.Monitor a magnitude of voltage that on test electrode, produces each time.

The voltage that produces owing to electrostatic induction on test electrode can be used as the pixel information of state separately, and can be subjected to being applied to the overlapping pixel capacitors of test electrode on the influence of magnitude of voltage.

The magnitude of voltage that on test electrode, produces that storage obtains by monitoring repeatedly, and when monitoring and the position data of overlapping one or more pixel capacitors of test electrode.If utilize CT (computed tomography) to adopt recovery algorithms (for example being the Fourier transform method), just can obtain to be applied to the relative value of the voltage on the pixel according to the data of storage by recovering a Two dimensional Distribution in the one-dimensional data.Just can take into account naturally and might read the magnitude of voltage that is applied on the pixel capacitors non-contiguously.According to being applied in the operating state that just might determine each pixel to the voltage relative value of pixel.Just can determine normal/abnormal according to operating state.

Representational recovery algorithms comprises the Fourier transform method that adopts continuous approximation and projected segmentation (projectionsection) rule, and a kind of overlap integral method.The present invention also can adopt above-mentioned recovery algorithms in addition.

It should be noted that first or second kind of scheme in, can the pixel operating state be filtered into a plurality of grades according to operating state, replace all the time by mode normal and that select unusually.

Simultaneously, according to first or second kind of scheme, if drive circuit defectiveness and pixel does not have defective just changes the magnitude of voltage that is applied on the pixel capacitors.So also can determine the normal/abnormal of drive circuit.

In the semiconductor device that adopts method of testing of the present invention, the transistor that uses in the pixel can be the transistor that forms with monocrystalline silicon, or adopts the thin-film transistor of polysilicon or amorphous silicon.Perhaps also can be to adopt the organic semi-conductor transistor.

The development personnel might be different from the degree of normal pixel operating state according to the operating state of pixel and determine that correctly a pixel is considered to the abnormal criterion of work.

The present invention adopts said structure just can determine defect point and determines the normal/abnormal of a pixel, does not need directly to use on interconnection point probe.So just can avoid in following process owing to the fine dust of using probe to cause reduces output.In addition, normal/abnormal owing in each composition formation step, determining with a testing procedure, can simplify testing procedure.

The present invention not only can be applied to luminescent device, can also be used for LCD or other semiconductor device.

Below to explain structure of the present invention.

The present invention relates to a kind of method of measuring voltage, it comprises:

Non-contiguously an interconnection point that pixel had or circuit element are applied a voltage, thereby voltage is applied on the pixel capacitors that this pixel has; And

Read the voltage that is applied on the pixel capacitors non-contiguously.

Interconnection point or the circuit element that a plurality of pixels are had separately applies a voltage non-contiguously, thereby voltage is applied on the pixel capacitors that each pixel has separately; And

Read the voltage sum that is applied on the pixel capacitors that each pixel has separately non-contiguously.

Between two terminals that first coil is had, apply first alternating voltage;

By fixed intervals first coil and second coil are overlaped;

Second alternating voltage that utilization produces between two terminals that second coil is had applies the 3rd alternating voltage to a pixel capacitors that pixel had;

By fixed intervals pixel capacitors and test electrode are overlaped; And

According to calculating the voltage that is applied on the pixel capacitors at the 4th alternating voltage that produces on the test electrode.

Between two terminals that first coil is had, apply first alternating voltage;

By fixed intervals first coil and second coil are overlaped;

Second alternating voltage that produces between two terminals that second coil is had is carried out rectification or waveform shaping, and it is applied on the interconnection point or circuit element that pixel had, thereby the pixel capacitors that this pixel had is applied the 3rd alternating voltage;

By fixed intervals pixel capacitors and test electrode are overlaped; And

Between two terminals that first coil is had, apply first alternating voltage;

By fixed intervals first coil and second coil are overlaped;

The pixel capacitors that second alternating voltage that utilization produces between two terminals that second coil is had has separately to a plurality of pixels applies the 3rd alternating voltage;

By fixed intervals pixel capacitors and the test electrode that these pixels had overlaped; And

According to calculate the voltage sum that is applied on the pixel capacitors that each pixel has separately at the 4th alternating voltage that produces on the test electrode.

Between two terminals that first coil is had, apply first alternating voltage;

By fixed intervals first coil and second coil are overlaped;

Second alternating voltage that produces between two terminals that second coil is had is carried out rectification or waveform shaping, and it is applied on the interconnection point or circuit element that a plurality of pixels have separately, thereby the pixel capacitors that each pixel has is separately applied the 3rd alternating voltage;

By fixed intervals pixel capacitors and the test electrode that each pixel has separately overlaped; And

According to calculate the voltage sum that is applied on each pixel pixel capacitors separately at the 4th alternating voltage that produces on the test electrode.

According to the present invention, first coil and second coil can have the interconnection point that forms at grade, and each interconnection point is taked the vortex shape.

According to the present invention, first coil and test electrode can be formed on first insulating surfaces.

Second coil and pixel capacitors are formed on second insulating surfaces.

According to the present invention, can be by the interval of controlling at the fluid that flows between first insulating surfaces and second insulating surfaces between first insulating surfaces and second insulating surfaces.

According to the present invention, utilize the voltage or the voltage sum that are applied on the pixel capacitors that obtain by this voltage measurement method just can determine that pixel is normal/abnormal.

The present invention relates to a kind of device, the pixel that is used for semiconductor device is had is carried out electric test, and this electric testing equipment comprises:

Primary coil;

By a device that fixed intervals are superimposed together with the secondary coil that primary coil and semiconductor device had;

By fixed intervals with pixel capacitors and the device that test electrode is superimposed together that pixel had;

Between two terminals that primary coil had, apply the device of an alternating voltage; And

Confirm the device of this pixel operating state according to the alternating voltage that on test electrode, produces.

Primary coil;

Confirm the device of this pixel operating state according to the alternating voltage that on test electrode, produces;

The alternating voltage that produces on test electrode has the information of this pixel operating state.

According to the present invention, can be by the interval of controlling at the fluid that flows between first coil and second coil between first coil and second coil.

According to the present invention, first coil can have the interconnection point that forms at grade, and interconnection point is taked the vortex shape.

The present invention relates to a kind of manufacture method of semiconductor device, this method comprises:

Form a pixel capacitors and interconnection point or circuit element;

Non-contiguously interconnection point or circuit element are applied a voltage, thereby voltage is applied on the pixel capacitors; And

Read the voltage that is applied on the pixel capacitors non-contiguously.

Form a pixel capacitors, interconnection point or circuit element, first coil, and second coil;

Between two terminals that first coil is had, apply first alternating voltage;

By fixed intervals first coil and second coil are overlaped;

Second alternating voltage that utilization produces between two terminals that second coil is had applies one the 3rd alternating voltage to pixel capacitors;

By fixed intervals pixel capacitors and a test electrode are overlaped; And

Between two terminals that first coil is had, apply first alternating voltage;

By fixed intervals first coil and second coil are overlaped;

Second ac voltage rectifier or the waveform shaping that produce between two terminals that second coil is had, and it is applied on interconnection point or the circuit element, thereby pixel capacitors is applied one the 3rd alternating voltage;

By fixed intervals pixel capacitors and a test electrode are overlaped; And

The present invention relates to a kind of method of measuring voltage, this method comprises:

An interconnection point or circuit element are applied a voltage control the voltage that imposes on a plurality of pixel capacitors;

Passing through to move a test electrode under the overlapping state of fixed intervals and arbitrary portion or whole pixel capacitors; And

Go out to be applied to voltage on each pixel capacitors according to the voltage on the test electrode and test electrode with respect to the position calculation of pixel capacitors.

Non-contiguously an interconnection point or circuit element are applied a voltage and control the voltage that imposes on a plurality of pixel capacitors;

Between two terminals that first coil is had, apply first alternating voltage;

By fixed intervals first coil and second coil are overlaped;

An interconnection point or circuit element are applied to second alternating voltage that produces between two terminals that second coil had, are used for controlling the voltage that imposes on a plurality of pixel capacitors;

According to going out to be applied to voltage on each pixel capacitors with respect to the position calculation of pixel capacitors at the 3rd alternating voltage that produces on the test electrode and test electrode.

Between two terminals that first coil is had, apply first alternating voltage;

By an interval first coil and second coil are overlaped;

The ac voltage rectifier or the waveform shaping that produce between two terminals that second coil is had, and it is applied on an interconnection point or the circuit element, be used to control the voltage that is applied on a plurality of pixel capacitors;

By interval and arbitrary portion or all move a test electrode under the overlapping state of pixel capacitors; And

According to the present invention, first coil and second coil can have formation interconnection point at grade, and interconnection point is taked the vortex shape.

According to the present invention, can be used between first coil and second coil fluid that flows and control interval between first coil and second coil.

According to the present invention, can adopt the Fourier transform method to calculate voltage on each pixel capacitors with continuous approximation and projected segmentation rule or a kind of overlap integral method.

The present invention relates to a kind of electric test method, this method comprises:

An interconnection point or circuit element are applied a voltage, be used to control the voltage that is applied on a plurality of pixel capacitors;

According to the voltage on the test electrode and test electrode with respect to the location confirmation interconnection point of pixel capacitors or the operating state of circuit element.

Non-contiguously an interconnection point or circuit element are applied a voltage, be used to control the voltage that is applied on a plurality of pixel capacitors;

Determine to be applied to the distribution of the voltage on the pixel capacitors with respect to the position of pixel capacitors according to the voltage on the test electrode and test electrode.

By interval and arbitrary portion or all move a test electrode under the overlapping state of pixel capacitors;

Determine to be applied to the distribution of the voltage on the pixel capacitors with respect to the position of pixel capacitors according to the voltage on the test electrode and test electrode; And

The operating state of interconnection point or circuit element is determined in distribution according to voltage.

Between two terminals that first coil is had, apply first alternating voltage;

By an interval first coil and second coil are overlaped;

Second alternating voltage that produces between two terminals that second coil is had is applied on an interconnection point or the circuit element, is used to control the voltage that is applied on a plurality of pixel capacitors;

Confirm the operating state of interconnection point or circuit element with respect to the position of pixel capacitors according to the 3rd alternating voltage that on test electrode, produces and test electrode.

Between two terminals that first coil is had, apply first alternating voltage;

By an interval first coil and second coil are overlaped;

According to the distribution of determining to be applied to the voltage on the pixel capacitors at the 3rd alternating voltage that produces on the test electrode and test electrode with respect to the position of pixel capacitors; And

The operating state of interconnection point or circuit element is confirmed in distribution according to voltage.

Between two terminals that first coil is had, apply first alternating voltage;

By an interval first coil and second coil are overlaped;

Second alternating voltage that produces between two terminals that second coil is had carries out rectification or waveform shaping, and it is applied on an interconnection point or the circuit element, is used to control the voltage that is applied on a plurality of pixel capacitors;

Between two terminals that first coil is had, apply first alternating voltage;

By an interval first coil and second coil are overlaped;

According to the present invention, can be used between primary coil and the secondary coil fluid that flows and control interval between first coil and second coil.

The present invention relates to a plurality of pixels that device substrate had are carried out a kind of device of electric test, this electric testing equipment comprises:

Primary coil;

The secondary coil device superimposed together that primary coil and device substrate is had by an interval;

Make arbitrary portion that each pixel has separately or all pixel capacitors and the device that test electrode is overlapping by an interval;

Be used for changing the device of test electrode with respect to the position of the pixel capacitors that each pixel had;

Confirm the device of the operating state of each pixel according to the alternating voltage that on test electrode, produces.

Primary coil;

The overlapping device of secondary coil that primary coil and device substrate is had by an interval;

The arbitrary portion that each pixel is had separately or all under pixel capacitors and the overlapping state of test electrode the change test electrode with respect to the device of the position of the pixel capacitors that each pixel had;

According to the present invention, first coil can have formation interconnection point at grade, and interconnection point is taked the vortex shape.

The present invention relates to a kind of method of making semiconductor device, this method comprises:

Form an interconnection point or circuit element, and the pixel capacitors that a voltage can be provided by interconnection point or circuit element;

Interconnection point or circuit element are applied a voltage;

Go out because of being applied to voltage on each pixel capacitors to be applied to voltage on the pixel capacitors that each pixel has separately with respect to the position calculation of pixel capacitors according to the voltage on the test electrode and test electrode.

Non-contiguously interconnection point or circuit element are applied a voltage;

The present invention relates to a kind of method of making device substrate, this method comprises:

Interconnection point or circuit element are applied a voltage;

Brief description

Fig. 1 is the top view of test substrate of the present invention;

Fig. 2 is the top view of device substrate of the present invention;

Fig. 3 is the block diagram of test substrate of the present invention and device substrate;

Fig. 4 A and 4B are the enlarged drawings of coil of the present invention;

Fig. 5 is test substrate of the present invention and the device substrate perspective view at test period;

Fig. 6 A and 6B are respectively enlarged drawing and the overlapping pixel capacitors and the enlarged drawings of test electrode of coil overlapping among the present invention;

Fig. 7 be test substrate of the present invention and during substrate at the circuit diagram of test period;

Fig. 8 A and 8B are the top views of test substrate of the present invention;

Fig. 9 is a block diagram of test substrate of the present invention and device substrate;

Figure 10 is a test substrate of the present invention and device substrate perspective view at test period;

The schematic diagram of Figure 11 A and 11B is represented the overlap mode when rotating test electrode between test electrode of the present invention and the pixel capacitors;

The schematic diagram of Figure 12 represents that one has pixel capacitors that faulty pixels has and the overlap mode between the test electrode of the present invention;

The block diagram of Figure 13 is represented the structure of the testing apparatus of embodiment 1;

The block diagram of Figure 14 is represented the structure of the testing apparatus of embodiment 2;

Figure 15 is the circuit diagram of the signal processing circuit of embodiment 3;

Figure 16 is the circuit diagram of the signal processing circuit of embodiment 4;

Figure 17 is the circuit diagram of the waveform shaping circuit of embodiment 5;

Figure 18 is the circuit diagram of the rectification circuit of embodiment 6;

Figure 19 A and 19B represent that pulse signal that the alternating current rectification by embodiment 6 obtains over time;

Figure 20 A and 21B represent that the direct current signal that produced by the pulse that increases together with embodiment 6 over time;

Figure 21 A and 21B are the circuit diagrams of the rectification circuit of embodiment 6;

Figure 22 is the block diagram of an oled panel of the luminescent device of embodiment 7;

Figure 23 is the top view of a kind of large-sized substrate of embodiment 8;

Figure 24 is the top view of a kind of large-sized substrate of embodiment 8;

The flow process of the testing procedure of the flowcharting embodiment 9 of Figure 25;

Figure 26 A-26D is respectively the top view and the sectional view of the coil of embodiment 10; And

Figure 27 represents a kind of operating state based on the pixel of embodiment 11.

The explanation of most preferred embodiment

[Implementation Modes 1]

Fig. 1 represents the top view of a test substrate, carries out test according to the present invention in the above with first kind of structure.Fig. 2 represents the top view of a device under test substrate.

As shown in Figure 1, test substrate has primary coil formation 102, one connector coupling parts 103 of 101, one outside input buffers, district and a test electrode 104 on a substrate 100.Described in this article test substrate comprises substrate 100, and primary coil forms district 101, and other circuit or all circuit elements that form on substrate 100.

The primary coil that test substrate had forms quantity and the layout that district 101 is not limited only to structure shown in Figure 1.The designer can determine arbitrarily that primary coil forms the quantity and the layout in district 101.

Although test substrate shown in Figure 1 has test electrode 104 and primary coil forms district 101, the present invention also is not limited only to such structure.Test electrode can separately prepare with the test substrate with primary coil formation district.Have test substrate and the test electrode that primary coil forms the district by providing separately, just can and primary coil and secondary coil between range-independence ground determine distance between test substrate and the test electrode.Simultaneously, in test process, the layout of test electrode can arbitrarily change with respect to device substrate.

Device substrate shown in Figure 2 has signal-line driving circuit 111 on a substrate 110, scan line drive circuit 112, pixel region 113, the interconnection point 114 that extends, connector coupling part 115, waveform shaping circuit or rectifier circuit 116, and a secondary coil forms district 117.Described in this article device substrate comprises substrate 110 and all circuit or the circuit element that are formed on the substrate 110.The interconnection point 114 that extends is interconnection points that the pixel region that has for device substrate and drive circuit provide drive signal and supply voltage.

The secondary coil of device substrate forms quantity and the layout that district 117 is not limited only to structure shown in Figure 2.The designer can determine arbitrarily that secondary coil forms the quantity and the layout in district 117.

With a FPC, TAB or the like is connected to connector coupling part 115 in the step after testing procedure.After finishing testing procedure along line A-A ' cutting device substrate, make be formed on secondary coil form in the district 117 secondary coil physics with electric on separate with connector coupling part 115.

Below to explain the operation in testing procedure of device substrate and test substrate.For the ease of understanding the signal flow in the testing procedure, adopt block diagram shown in Figure 3 to represent the structure of device substrate shown in Fig. 1 and 2 and test substrate, explain with reference to Fig. 1 and 2 again simultaneously.

On a test substrate 203, the test AC signal is input to outside input buffer 102 from a signal source 201 or AC power 202 by a connector that is connected on the connector coupling part 103.The test AC signal externally is cushioned-amplifies and be input to primary coil and forms district 101 in the input buffer 102.

At Fig. 1, in 2 and 3, although be to be input to primary coil formation to distinguish 101 through the input exchange signal after buffering-amplifications in the input buffer 102 externally, the present invention is not limited only to this structure.AC signal can be directly inputted to primary coil and form district 101, and outside input buffer 102 need not be provided.

Form a plurality of primary coils of formation in the district 101 at primary coil.AC signal is imported into two terminals of primary coil.

Simultaneously, in secondary coil that device substrate 204 is had formed district 117, corresponding primary coil formed district's 101 primary coils that had and forms a plurality of secondary coils.When AC signal is imported into primary coil, because the electromagnetic induction between two terminals of secondary coil will produce the alternating voltage of an electromotive force form.

The alternating voltage that produces on the secondary coil is provided for waveform shaping circuit 116a or rectification circuit 116b.Waveform shaping circuit 116a or rectification circuit 116b produce a drive signal or supply voltage to alternating voltage shaping or rectification.

The interconnection point 114 that drive signal that produces or supply voltage are provided for extension.Drive signal that is provided or supply voltage are provided for signal-line driving circuit 111, scan line drive circuit 112 and pixel region 113 by the interconnection point 114 that extends.

The alternating voltage that produces on secondary coil can be used as drive signal and is directly inputted to pixel region 113, and need not pass through waveform shaping circuit 116a or rectification circuit 116b.

Be provided with a plurality of pixels in the pixel region 113, each pixel is provided with a pixel capacitors.Signal-line driving circuit and scan line drive circuit are not limited only to the quantity shown in Fig. 1 and 2.

Signal-line driving circuit 111, the operation of scan line drive circuit 112 and pixel region 113 applies a voltage to the pixel capacitors of each pixel.

Do not need the such drive circuit of picture signals line drive circuit 111 and scan line drive circuit 112 as the device substrate of tested object.Can only apply drive signal voltage or supply voltage to pixel region 113.

Yet the value of drive signal voltage or supply voltage must be arranged on and make the voltage that is applied on the pixel capacitors is an alternating voltage.

The pixel capacitors of pixel is overlapping by fixed intervals and test electrode 104.When the pixel operate as normal when pixel capacitors applies an alternating voltage, will on test electrode 104, produce an electromotive force.The information that alternating voltage that produces on test electrode 104 or electromotive force can provide the pixel operating state.Just can confirm the pixel operating state that this pixel region has according to the alternating voltage that on test electrode 104, produces, thereby determine that it is normal/abnormal, or concrete fault point.

Below to explain the concrete structure of primary coil and secondary coil (below be referred to as coil).

Fig. 4 represents the enlarged drawing of coil.The form that coil shown in Fig. 4 A is taked is a helical curve.The form that coil shown in Fig. 4 B is taked is a square spiral.

About the coil that the present invention adopts, the sliver that coil had is completed at grade, and the line that coil had is taked spiral form.Therefore, from form the direction on plane perpendicular to coil, the line that coil had is depicted as a curve or square.

The designer can suitably determine the number of turn of coil, live width, and the area on substrate.Yet, the number of turn and the structure of coil need correctly be set according to the semiconductor device standard.Also need be input to primary coil and form waveform, frequency and the amplitude of the test in district with AC signal according to the correct setting of semiconductor device standard.

Fig. 5 represents a perspective view with the overlapping device overlapping 204 of test substrate 203.Situation about representing among the figure is that test substrate 203 shown in Figure 1 has a primary coil, the coil shown in Fig. 4 A just, and the device substrate shown in Fig. 2 has a secondary coil, the just coil shown in Fig. 4 A.Connector 205 is connected to connector coupling part 103.

As shown in Figure 5, the primary coil that had of test substrate 203 form secondary coil that district 101 had by fixed intervals and device substrate 204 form distinguish 117 overlapping.Desirable interval is very little.As long as this can be controlled at interval, it is near more good more that the secondary coil that primary coil formation district 101 and device substrate 204 are had forms district 117.

Simultaneously, the pixel capacitors that had of test electrode 104 and pixel region 113 is by superimposed being in the same place of fixed intervals.Desirable interval is very little.As long as this can be controlled at interval, the pixel capacitors that test electrode 104 and pixel region 113 are had is near more good more.

Can keep interval between test substrate 203 and the device substrate 204 by fixing two substrates.Or keep this at interval by fixing one of them device substrate 204 or test substrate 203, between test substrate 203 and device substrate 204, adopt the fluid of constant flow rate or pressure.Representational fluid is gas or liquid.In addition also can use the baregin fluid.

Fig. 6 A represents that the primary coil that overlaps forms the partial enlarged drawing in district 101 and secondary coil formation district 117.206 represent primary coil, and 207 represent secondary coil.

Although the helix of primary coil 206 among Fig. 6 A and secondary coil 207 rotates in the same direction, the present invention is not limited only to this structure.The hand of spiral of primary coil and secondary coil can be opposite.Simultaneously, the designer can also suitably be provided with the interval (Lgap) between primary coil and the secondary coil.

Fig. 6 B represents the partial enlarged drawing that pixel capacitors 208 that pixel has and test electrode 104 overlap.In Fig. 6 B, a test electrode 104 is simultaneously overlapping with a plurality of pixel capacitors.Can form test electrode with a plurality of conductive films that connect on a conductive film or the circuit.

Test electrode 104 that overlaps and pixel capacitors 208 form an electric capacity.If under the state shown in Fig. 6 B, pixel capacitors 208 is applied an alternating voltage, on test electrode 104, will produce an electromotive force.

Fig. 7 represents the circuit diagram of the test electrode 104 of the pixel capacitors 208 of the device substrate that overlaps and test substrate 104.Structure shown in Figure 7 only is an example, and the value volume and range of product of interconnection point that pixel and tie point thereof had and element is not limited only to structure shown in Figure 7.Simultaneously, although Fig. 7 represents is the pixel design of luminescent device, the present invention can also be applied to other semiconductor device.Specifically, as long as can apply an alternating voltage to pixel capacitors by the alternating voltage that control is applied on interconnection point or the element, method of testing of the present invention just can be applied to a kind of semiconductor device.

Luminescent device shown in Figure 7 have quantity be the holding wire S1 of x to Sx, quantity be the power line V1 of x to Vx, and quantity is the scan line of y.Each pixel 102 has a signal line, a power line and a scan line.In addition, pixel 802 has 803, one drive TFT 804 of a switching TFT and storage capacitance 805.

The 806th, the electric capacity that test electrode 104 and pixel capacitors 208 are overlaped and form.

The gate electrode of switching TFT 803 is connected to any scan line G1 to Gy.One of the source electrode of switching TFT 803 and drain region are connected to any signal line S1 to Sx, and another is connected to the gate electrode of drive TFT 804.One of the source electrode of drive TFT 804 and drain region are connected to any power line V1 to Vx, and another is connected to pixel capacitors.

Two electrodes of storage capacitance 805 are connected respectively to the gate electrode and the power line of drive TFT 804.

In pixel shown in Figure 7, the AC driving signal voltage is applied in to power line V1 to Vx.Therefore, under the normal situation of pixel, the voltage that control imposes on scan line just can make switching TFT 803 conductings, just can make drive TFT 804 conductings and control the voltage that imposes on holding wire.So just an AC driving signal voltage can be applied on the pixel capacitors.

By pixel capacitors being applied an AC driving signal voltage, just can with the overlapping test electrode 104 of pixel capacitors on produce an alternating voltage.The alternating voltage that produces is provided for late-class circuit as output 807.

In pixel shown in Figure 7, the pixel capacitors and the same test electrode of those pixels with same scan line is overlapping.Yet test electrode is not limited only to layout shown in Figure 7.The pixel that has with the overlapping pixel capacitors of test electrode can choose at random.With pixel shown in Figure 7 is example, and the pixel capacitors with those pixels of same signal line can be connected to same test electrode.

The late-class circuit that receives this output 807 is determined the normal/abnormal of pixel according to the alternating voltage that produces on test electrode.

Have such situation according to semiconductor device driving method or test electrode layout, promptly simultaneously to applying voltage with the overlapping a plurality of pixel capacitors of test electrode, or order applies or arbitrarily applies.

If simultaneously a plurality of pixel capacitors are applied alternating voltage, in the alternating voltage waveform that produces on the test electrode in all pixels operate as normal and have at least between the pixel cisco unity malfunction and will have any different all.That is to say that the alternating voltage that produces can be used as the information of the operating state of all pixels with these pixel capacitors on test electrode.

Simultaneously, if in order a plurality of pixel capacitors are applied alternating voltage, test electrode just has the alternating voltage that increases in order, and each grade can be used as the information of each pixel operating state.Therefore, if all pixels are all normal, operate these pixels will provide a monotone variation on test electrode alternating voltage in order.Therefore, if there is any one pixel unusual, form nonmonotonic variation in the alternating voltage that the pixel of operation in tandem will produce on test electrode.Therefore, between all pixel operate as normal and at least one pixel abnormal work, the alternating voltage waveform that produces on test electrode is different.

Sometimes, compare, just can confirm the operating state of pixel, and determine that it is normal/abnormal if the actual alternating voltage that produces on the test electrode has been confirmed to be the alternating voltage that produces on the normal test electrode with pixel.Yet the alternating voltage of reference need not be confirmed to be normal pixel based on one as a comparison.If between the alternating voltage that produces respectively on the test electrode, compare, just can determine the normal/abnormal of a pixel operating state.In addition, if compare, also can confirm the operating state of pixel and determine that it is normal/abnormal with an ac voltage that goes out by analog computation.

Although test electrode and pixel capacitors are that each pixel that has according to pixel region overlaps in Fig. 7, the present invention is not limited only to this.Test electrode and pixel capacitors can be only overlapping with elective pixel, only to elective pixel execution work state verification.

Have drive circuits such as signal-line driving circuit and scan line drive circuit although this Implementation Modes of explaining in this example is a device substrate, measured device substrate of the present invention is not limited only to this.Even have only a pixel region on the device substrate, also can carry out test with method of testing of the present invention.Simultaneously, for the single device that is called as TEG or evaluation circuits that constitutes by individual devices, can adopt method of testing of the present invention or device to confirm its operating state.

The present invention can determine normal/abnormal with said structure, need not directly touch the probe of interconnection point.Thereby just can prevent from subsequent step, to reduce output because of the fine dust that the use probe brings.In addition, owing to just can determine normal/abnormal in all pattern step with a testing procedure, test process can be simplified.

[Implementation Modes 2]

Fig. 8 represents to carry out with second kind of structure according to the present invention the top view of first and second test substrate of test.The relevant device substrate that adopts in the present embodiment can be referring to the Fig. 2 in the Implementation Modes 1.

First test substrate shown in Fig. 8 A has the connector coupling part 6103 that a primary coil forms 6101, one the outside input buffers 6102 in district and is used for first test substrate on a substrate 6100.In specification, first test substrate comprises substrate 6100, and primary coil forms district 6101 and the every other circuit or the circuit element that are formed on the substrate 6100.This wherein may not need to provide outside input buffer 6102.

The primary coil that first test substrate is had forms quantity and the layout that district 6101 is not limited only to structure shown in Fig. 8 A.The designer might determine arbitrarily that primary coil forms the quantity and the layout in district 6101.

Second test substrate shown in Fig. 8 B has a plurality of test electrodes 6121 and is used for the connector coupling part 6122 of second test substrate on a substrate 6120.In specification, second test substrate comprises substrate 6120, is used for the connector coupling part 6122 of second test substrate and is formed on every other circuit or circuit element on the substrate 6100.

The test electrode 6121 that second test substrate is had is not limited only to the quantity and the layout of structure shown in Fig. 8 B.The designer might arbitrarily determine the quantity and the layout of test electrode 6121.

Below to explain the operation in testing procedure of device substrate and test substrate.For the ease of understanding the signal flow in the testing procedure, adopt block diagram shown in Figure 9 to come the structure of the device substrate shown in presentation graphs 8 and 2 and first and second test substrate, explain with reference to Fig. 8 and 2 again simultaneously.

On first test substrate 6203, the test AC signal is input to outside input buffer 6102 from a signal source 201 or AC power 202 by a connector that is connected on the connector coupling part 6103.The test AC signal externally is cushioned-amplifies and be input to primary coil and forms district 6101 in the input buffer 6102.

At Fig. 2, in 8 and 9, sometimes, externally be imported into primary coil formation through the input exchange signal after buffering-amplifications in the input buffer 6102 and distinguish 6101.Yet the present invention is not limited only to this structure.AC signal can be directly inputted to primary coil and form district 6101, and outside input buffer 6102 need not be provided.

Form a plurality of primary coils of formation in the district 6101 at primary coil.AC signal is imported into two terminals of primary coil.

Simultaneously, in secondary coil that device substrate 204 is had formed district 117, corresponding primary coil formed district's 6101 primary coils that had and forms a plurality of secondary coils.When AC signal is imported into primary coil, because the electromagnetic induction between two terminals that secondary coil had will produce the alternating voltage of an electromotive force form.

Be provided with a plurality of pixels in the pixel region 113, each pixel is provided with a pixel capacitors.Signal-line driving circuit and scan line drive circuit are not limited only to the quantity shown in Fig. 2 and 9.

The pixel capacitors of pixel is overlapping by fixed intervals and test electrode 6121.When the pixel operate as normal when pixel capacitors applies an alternating voltage, will on test electrode 6121, produce an electromotive force.The information that alternating voltage that produces on test electrode 6121 or electromotive force can provide the pixel operating state.Just can confirm the operating state of the pixel that this pixel region has according to the alternating voltage that on test electrode 6121, produces, thereby determine that it is normal/abnormal, or concrete fault point.

Sometimes, first and second coils that use in the present embodiment are the same with coil among the embodiment 1, and can adopt the coil shown in Fig. 4 A and the 4B.

The perspective view that Figure 10 represents is that device substrate 204 and first test substrate 6203 and second test substrate 6205 are overlapping.Situation shown in the figure is that first test substrate 6203 among Fig. 8 A has a primary coil, the coil shown in Fig. 4 A just, and the device substrate shown in Fig. 2 has a secondary coil, the just coil shown in Fig. 4 A.Connector 6209 is connected to the connector coupling part 6103 of first test substrate.Simultaneously, connector 6210 is connected to the connector coupling part 6122 of second test substrate.

As shown in figure 10, the primary coil that had of first test substrate 6203 form secondary coil that district 6101 had by fixed intervals and device substrate 204 form distinguish 117 overlapping.Desirable interval is very little.As long as this can be controlled at interval, it is near more good more that the secondary coil that primary coil formation district 6101 and device substrate 204 are had forms district 117.

Simultaneously, the pixel capacitors that pixel had of the test electrode 6121 that had of second test substrate 6205 and pixel region 113 is by superimposed being in the same place of fixed intervals.Desirable interval is very little.As long as this can be controlled at interval, the pixel capacitors that pixel had of test electrode 6121 and pixel region 113 is near more good more.

Can keep interval between test substrate 6203 and the device substrate 204 by fixing two substrates.Or keep this at interval by fixing one of them device substrate 204 or first test substrate 6203, between first test substrate 6203 and device substrate 204, adopt the fluid of constant flow rate or pressure.Representational fluid is gas or liquid.In addition also can use the baregin fluid.

Similar with Implementation Modes 1, the helix of primary coil and secondary coil can be identical or rightabout.Simultaneously, the designer can also suitably be provided with the interval (Lgap) between primary coil and the secondary coil.About the overlap mode between primary coil and the secondary coil can be referring to Fig. 6 A in the Implementation Modes 1.

Equally, with similar in the Implementation Modes 1, a test electrode 6121 is simultaneously overlapping with a plurality of pixel capacitors.Can form test electrode with a plurality of conductive films that connect on a conductive film or the circuit.The overlap mode of test electrode and pixel capacitors can be referring to Fig. 6 B in the Implementation Modes 1.Utilize overlapping test electrode 6121 and pixel capacitors 208 to form an electric capacity.If pixel capacitors 208 is applied an alternating voltage, because the electrostatic induction on the test electrode 6121 will produce an electromotive force.

Sometimes, under this Implementation Modes, with the position of the overlapping pixel capacitors 208 of test electrode 6121 be random.In addition, the position of test electrode 6121 and pixel capacitors 208 relation is different with different monitors.

About the circuit diagram of the test electrode 6121 of the pixel capacitors 208 of the device substrate that overlaps and second test substrate can be referring to Fig. 7 of Implementation Modes 1.It should be noted that in pixel shown in Figure 7 the pixel capacitors and the same test electrode of pixel with same scan line is overlapping.Yet test electrode is not limited only to structure shown in Figure 7.Might choose at random those overlapping pixels of pixel capacitors and test electrode.

Below to explain test electrode 6121 and the pixel capacitors 208 position relation during monitoring.

The designer can arbitrarily be provided with the monitoring number of times to the alternating voltage that produces on the test electrode 6121.The designer can also arbitrarily be provided with the position relation between test electrode 6121 and the pixel capacitors 208 in each observation process.Yet, in order to monitor, must to want the position relation between fixing test electrode 6121 and the pixel capacitors 208, and the monitoring number of times is set, so that can determine the operating state of each pixel by the ac voltage on the test electrode 6121 of all monitoring acquisitions.

Figure 11 A and 11B represent between pixel capacitors 208 and the test electrode 6121 round as the pixel region center of central axis one with the parallel plane plane that forms pixel capacitors 208 on position relation when rotating test electrode 6121.For the ease of explaining, example described herein is that to adopt quantity in pixel region be 5 * 5 pixel capacitors.

Figure 11 A is illustrated in the state of (0 °) before the rotation, and these wherein per five pixel capacitors 208 are overlapping with test electrode 6121.

Figure 11 B represents that test electrode 6121 turns over the state of 45 degree counterclockwise from the state of Figure 11 A round the center of pixel region.In this case, a different pixel capacitors 208 is overlapping among test electrode 6121 and Figure 11 A.

The amplitude and the waveform of the alternating voltage that produces on each test electrode 6121 are different, and this depends on the quantity with the overlapping pixel capacitors of test electrode 6121, the area overlapping with pixel capacitors, and be applied to ac voltage on the pixel capacitors.

Might calculate in advance and the quantity of the overlapping pixel capacitors of test electrode 6121 and the area overlapping with pixel capacitors.At all pixels all under the situation of operate as normal, can also be by calculating or actual measurement obtain to be applied to the amplitude and the waveform of the alternating voltage on the pixel capacitors in advance.

For example be under situation shown in Figure 12, with the pixel capacitors 208a that comprises a bad pixels in the overlapping pixel capacitors 208 of test electrode 6121, the amplitude of the alternating voltage that produces on test electrode 6121 and waveform and all pixels all situation of operate as normal are different.

With the overlapping pixel capacitors of test electrode 6121 in the middle of, along with increasing of the pixel capacitors occupation rate of bad pixels, the amplitude of the alternating voltage that produces on test electrode 6121 and waveform will be away from all pixels situations of operate as normal all.The pixel that therefore just can calculate operate as normal with those overlapping pixel capacitors of a test electrode 6121 in the middle of occupation rate.

In addition because test electrode 6121 repeatedly changed with respect to the position of pixel capacitors 208, the pixel that just might obtain operate as normal with those overlapping pixel capacitors of a test electrode 6121 in the middle of occupation rate.According to the occupation rate of the operate as normal pixel that obtains on each position of test electrode 6121, just its operating state is determined on pixel ground one by one.Just can determine normal/abnormal according to operating state.

Sometimes, comprise in order and arbitrarily in the voltage applying that to applying this depends on semiconductor device driving method and test electrode layout simultaneously with the overlapping a plurality of pixel capacitors of test electrode.

Select at the same time and operate under the situation of a plurality of pixels, in the alternating voltage waveform that produces on the test electrode in all pixels operate as normal and to have at least between the pixel cisco unity malfunction both of these case be different all.That is to say, have the information of all pixel operating states in the alternating voltage that on test electrode, produces.

Simultaneously, if select and operate a plurality of pixels in order, test electrode will produce the alternating voltage that increases in order, and each grade can be used as the information of each pixel operating state.Therefore, with respect to the pixel capacitors of work pixel and the overlapping region between the test electrode, if it is all normal to visit all a plurality of pixels of doing in order, the alternating voltage that produces on test electrode will be dull rate of change.

Otherwise if comprise an abnormal picture element in Cao Zuo a plurality of pixels in order, with respect to the pixel capacitors of work pixel and the overlapping region between the test electrode, the alternating voltage that produces on test electrode does not just have dull rate of change.Therefore, between all pixel operate as normal and at least one pixel abnormal work both of these case, the alternating voltage waveform that produces on test electrode is different.

Sometimes, can compare the operating state of confirming a pixel between the actual alternating voltage that produces by being confirmed to be at the pixel that uses on the alternating voltage that producing on the test electrode under the normal situation and the test electrode, and definite it is normal/abnormal.Yet the alternating voltage of reference will be confirmed to be on normal that pixel scarcely as a comparison.By between the alternating voltage that produces on a plurality of test electrodes, comparing, just can confirm the operating state of a pixel, and determine that it is normal/abnormal.Must consider area when comparing in this case with the overlapping pixel capacitors of test electrode.Simultaneously,, just can confirm the operating state of a pixel, and determine that it is normal/abnormal by comparing with the ac voltage that analog computation goes out.

Sometimes, although at Fig. 7, the pixel capacitors of all pixels that the test electrode among 11A and the 11B and this pixel section are had overlaps, and the present invention also is not limited only to this situation.Test electrode and pixel capacitors can be only overlapping on elective pixel, only to the test of elective pixel execution to operating state.

Although the example that this Implementation Modes is explained is that device substrate has signal-line driving circuit and the scan line drive circuit as drive circuit, tested in the present invention device substrate is not limited only to this.If device substrate only has a pixel, also can carry out test with method of the present invention.Simultaneously, for the single device that is called as TEG or evaluation circuits that constitutes by individual devices, also can confirm its operating state with method of testing of the present invention or device.

It should be noted that test electrode to be fixed on the substrate and just can directly control and the mobile test electrode.

The present invention can determine the normal/abnormal of device substrate with said structure, need not directly touch the probe of interconnection point.Thereby just can prevent from subsequent step, to reduce output because of the fine dust that the use probe brings.In addition, owing to just can determine normal/abnormal in all pattern step with a testing procedure, test process can be simplified.

Below to explain embodiments of the invention.

[embodiment 1]

This embodiment illustrates a kind of structure of testing apparatus, by comparing the operating state of confirming pixel between the alternating voltage that produces on a plurality of test electrodes of embodiment 1, and determines that it is normal/abnormal.

Figure 13 represents the block diagram of the testing apparatus structure of this embodiment.

Import a measurement sign on from main frame I/F305 to measuring controller 306 as information.In order to begin to measure, by measure controller 306 to one of processor I/F307 input in order to the instruction of control as the position of the device substrate 302 of tested object and test substrate 301.The test electrode 303 that pixel capacitors (not shown) that processor I/F307 is had device substrate 302 by fixed intervals and test substrate 301 are had overlaps.

Measure controller 306 to measuring measurement sign on of sequencer 308 inputs as information.Select the position of tested object pixels by measuring a panel demonstration of sequencer 308 controls sequencer 309, and show that from panel sequencer 309 is to coil actuator 310 these positions of input as information.RF charge carrier with signal source and AC power can provide alternating voltage to late-class circuit.Measure sequencer 308 control RF charge carriers 311 to alternating voltage of coil actuator 310 inputs.

The alternating voltage of coil actuator 310 usefulness inputs is used for the alternating voltage of operational testing object pixel for outside input buffer 311 provides.The alternating voltage of 311 pairs of supplies of outside input buffer cushions-amplifies, and provides it to primary coil formation district 304.

For district's 304 tested object pixel work that provide alternating voltage that device substrate 302 is had are provided primary coil.Alternating voltage is applied on the pixel capacitors of this pixel.By the way, the operation of device substrate when providing alternating voltage for primary coil formation district be specific explanations mistake in Implementation Modes, thereby needn't speak more herein.

When alternating voltage is applied on the pixel capacitors, will with the overlapping test electrode 303 of pixel capacitors on produce an alternating voltage.The work state information that comprises same pixel in the alternating voltage that on test electrode 303, produces.

The alternating voltage that produces on test electrode 303 is provided for a signal processing circuit 312.Handle the ac voltage that on each pixel capacitors, produces by signal processing circuit 312.Specifically be exactly poor between the alternating voltage that calculates on each test electrode.The alternating voltage waveform that produces on test electrode 303 is different, and it depends on the operating state of pixel.Therefore, the information that has comprised the pixel operating state in the AC voltage difference that calculates.Therefore, have the signal of information, comprised the information of pixel operating state in the AC voltage difference that just calculates (job information signal).This job information signal is imported into selector circuit 313.

The alternating voltage that produces on test electrode often comprises various noises.Just can eliminate this noise that on test electrode, produces to a certain extent by the difference of calculating between the ac voltage that produces on the test electrode with closer frequency and voltage.Test electrode position is each other leaned on closely more, and the frequency of noise and voltage are just near more.Therefore, preferably calculate the poor of the alternating voltage between those more close on position test electrodes each other.

Provide the positional information that shows the pixel that sequencer 309 is selected by panel to selector circuit 313 by measuring sequencer 308.Selector circuit 313 is to job information signal of a signal analyzer 314 inputs, and this signal correspondence that pixel of selecting in the middle of the job information signal of a plurality of inputs.

Signal analyzer 314 amplifies the job information signal of input, and A/D converts digital form to, handles then.The A/D conversion is not necessary, can carry out by analog form yet and handle operation.Carrying out and handling operation is in order to analyze the operating state of this pixel.Therefore, the designer can correctly select to handle the content of operation.

Be imported into measurement controller 306 through the job information signal of handling after operating.Measurement controller 306 is handled the job information signal of operation more and is determined a kind of pixel state, and further determines the normal/abnormal of pixel.

By the way, luminescent device of the present invention is not limited only to structure shown in Figure 13.Only require that luminescent device has the device that produces alternating voltage, the device that provides voltage to the interconnection point and the circuit element of device substrate non-contiguously, read the device of the voltage on the pixel capacitors that is applied to device substrate non-contiguously, and be used for the device of control device substrate location.Also to determine a pixel state non-contiguously in addition, and determine the normal/abnormal of this pixel according to the alternating voltage reading.

[embodiment 2]

This embodiment illustrates a kind of structure of testing apparatus, utilizes the alternating voltage that produces on a plurality of test electrodes of embodiment 2 to confirm the operating state of pixel, and determines that it is normal/abnormal.

Figure 14 represents the block diagram of the testing apparatus structure of this embodiment.

Import a measurement sign on from main frame I/F6305 to measuring controller 6306 as information.In order to begin to measure, as information, by measure controller 6306 to one of processor I/F6307 input in order to the instruction of control as the position of device substrate 6302, the first test substrate 6301 of tested object and second test substrate 6315.

The secondary coil that processor I/F6307 is had device substrate 6302 by fixed intervals is eliminated primary coil that district's (not shown) and first test substrate 6301 had and is eliminated district 6304 and overlap.Simultaneously a test electrode 6303 being had of the pixel capacitors (not shown) device substrate 6302 being had by fixed intervals of processor I/F6307 and second test substrate 6315 overlaps.

Measure controller 6306 to measuring measurement sign on of sequencer 6308 inputs as information.Select the position of tested object pixels by measuring a panel demonstration of sequencer 6308 controls sequencer 6309, and show that from panel sequencer 6309 is to coil actuator 6310 these positions of input as information.RF charge carrier 6311 with signal source and AC power can provide alternating voltage to late-class circuit.Measure sequencer 6308 control RF charge carriers 6311 to alternating voltage of coil actuator 6310 inputs.

The alternating voltage of coil actuator 6310 usefulness inputs is used for the alternating voltage of operational testing object pixel for outside input buffer 6311 provides.The alternating voltage of 6311 pairs of supplies of outside input buffer cushions-amplifies, and provides it to primary coil formation district 6304.

For district's 6304 tested object pixel work that provide alternating voltage that device substrate 6302 is had are provided primary coil.Alternating voltage is applied on the pixel capacitors of this pixel.

When alternating voltage is applied on the pixel capacitors, will with the overlapping test electrode 6303 of pixel capacitors on produce an alternating voltage.The work state information that comprises same pixel in the alternating voltage that on test electrode 6303, produces.

The alternating voltage that produces on test electrode 6303 is provided for a signal processing circuit 6312.Handle the ac voltage that on each test electrode, produces by signal processing circuit 6312.Specifically be exactly calculate the alternating voltage that produces between the test electrode poor.The alternating voltage that produces on test electrode often comprises various noises.Just can eliminate this noise that on test electrode, produces to a certain extent by the difference of calculating between the ac voltage that produces on the test electrode with closer frequency and voltage.Test electrode position is each other leaned on closely more, and the frequency of noise and voltage are just near more.Therefore, preferably calculate the poor of the alternating voltage between those more close on position test electrodes each other.

By the way, the alternating voltage waveform that produces on test electrode 6303 is different, and it depends on the operating state of pixel.Therefore, the information that has comprised the pixel operating state in the AC voltage difference that calculates.Therefore, have the signal of information, comprised the information of pixel operating state in the AC voltage difference that just calculates (job information signal).This job information signal is imported into selector circuit 6313.

Provide the positional information that shows the pixel that sequencer 6309 is selected by panel by measuring sequencer 6308 to selector circuit 6313, with the position of the overlapping pixel capacitors of each test electrode 6303, and the ratio of overlapping area.Selector circuit 6313 is to job information signal of a signal analyzer 6314 inputs, and this signal correspondence that pixel of selecting in the middle of the job information signal of a plurality of inputs.

Signal analyzer 6314 amplifies the job information signal of input, and A/D converts digital form to, handles then.By the way, the A/D conversion is not necessary, can carry out by analog form yet and handle operation.Carry out to handle operation and be in order to analyze during monitoring the operating state with overlapping this pixel of test electrode.Therefore, the designer can correctly select to handle the content of operation.

Be imported into measurement controller 6306 through the job information signal of handling after operating.

Then, processor I/F6307 changes the position of second test electrode 6315 with respect to device substrate 6302.Repeatedly repeat aforesaid operations, a plurality of to measuring controller 6308 inputs through handling the job information signal of operation.Measure controller 6308 according to the state of during monitoring, determining each pixel, and definite this pixel is normal/abnormal with the job information signal through handling operation of the position of the overlapping pixel capacitors of each test electrode and area ratio and input.

It should be noted that testing apparatus of the present invention is not limited only to structure shown in Figure 14.As long as testing apparatus of the present invention has the device that produces alternating voltage, the device that provides voltage to the interconnection point and the circuit element of device substrate non-contiguously, read the device of the voltage on the pixel capacitors that is applied to device substrate non-contiguously, and be used for the device of control device substrate location.Also to determine a pixel state non-contiguously in addition, and determine the normal/abnormal of this pixel according to the alternating voltage reading.

[embodiment 3]

Present embodiment will be explained the concrete structure of the signal processing circuit of testing apparatus shown in Figure 13.Should be noted that the testing apparatus shown in Figure 14 also can adopt the structure of present embodiment.

Figure 15 represents the circuit diagram of the signal processing circuit of present embodiment.It is that a plurality of differential amplifier 350_1 of test electrode 303 (E1 is to Ey) of y are to 350_y-1 that signal processing circuit shown in Figure 15 has corresponding quantity.

The alternating voltage that produces on test electrode is imported into the noninverting input (+) of differential amplifier respectively.The anti-phase input (-) of each differential amplifier is provided the alternating voltage that produces on the test electrode different with the test electrode of corresponding noninverting input (+).

In the present embodiment, the voltage of going up the alternating voltage that produces at test electrode Ei (i is any one in the middle of 1 to y-1) is provided for the noninverting input (+) of differential amplifier 350_i.The voltage of going up the alternating voltage that produces at test electrode Ei+1 (i is any one in the middle of 1 to y-1) is provided for second end of differential amplifier 350_i+1.

The output of each differential amplifier is job information signal of level selector circuit 313 inputs backward.According to just confirming from the job information signal of differential amplifier output and the operating state of the pixel that each test electrode is overlapping.Specifically, the value of the voltage that is had according to the job information signal or the operating state that waveform just can be confirmed a pixel.Yet, can confirm operating state with overlapping that pixel of test electrode Ey according to the job information signal of differential amplifier 350_y-1 output.Can prepare a virtual test electrode equally, test electrode Ey be gone up the alternating voltage that produces the noninverting input (+) of a differential amplifier that provides separately is provided, and the voltage of virtual test electrode is offered second end.Can also in pixel region, provide one not to be actually used in and to show but be used for the virtual pixel of test purpose in addition, allow the virtual pixel can be overlapping with the virtual test electrode.

Be included in the job information signal of differential amplifier 350_1 output with the work state information of the overlapping pixel of test electrode E1.Be included in the job information signal of differential amplifier 350_j-1 and differential amplifier 350_j output with the work state information of the overlapping pixel of test electrode E1j (j=2 is to y-1).Be included in the job information signal of differential amplifier 350_y-1 output with the work state information of the overlapping pixel of test electrode Ey.

By the way, the designer can also correctly be provided with a standard, determines according to the degree of difference between a pixel operating state and the normal pixel operating state whether this pixel work is normal.

The signal processing circuit of using among the present invention is not limited in structure shown in Figure 15.

The enforcement of this embodiment can with embodiment 1 or 2 independent assortments.

[embodiment 4]

Figure 16 represents the circuit diagram of the signal processing circuit of present embodiment.Signal processing circuit shown in Figure 16 have corresponding quantity be a plurality of former limit induction coil 360_1 of test electrode 303 (E1 is to Ey) of y to 360_y-1, a plurality of secondary induction coil 361_1 to 361_y-1 and a plurality of electric capacity 362_1 to 362_y-1.

The center of former limit of each of present embodiment and secondary induction coil (below be referred to as induction coil) can be provided with also can not establish a magnetic part.Simultaneously, can be in also can be not at grade for the interconnection point that these induction coils had.

The alternating voltage that produces on test electrode is imported into the first terminal of former limit induction coil respectively.Second terminal of each former limit induction coil is provided the alternating voltage that produces on the test electrode different with the test electrode of corresponding the first terminal.

In the present embodiment, the voltage of going up the alternating voltage that produces at test electrode Ei (i is any one in the middle of 1 to y-1) is provided for the first terminal of former limit induction coil 360_i.The voltage of going up the alternating voltage that produces at test electrode Ei+1 (i is any one in the middle of 1 to y-1) is provided for second terminal of former limit induction coil 360_i+1.

Former limit induction coil 360_1 distinguishes superimposed being in the same place to 360_y-1 and secondary induction coil 361_1 to 361_y-1.Form electric capacity 362_1 respectively to 362_y-1 at secondary induction coil 361_1 between first and second terminals of 361_y-1.

The voltage that produces to the first terminal of 361_y-1 at secondary induction coil 361_1 all is provided for selector circuit 313 as the job information signal voltage.For secondary induction coil 361_1 provides a constant voltage (being ground voltage) to all second terminals of 361_y-1 in Figure 16.

Just can confirm and the operating state of the pixel that each test electrode is overlapping according to the job information signal that on the first terminal of secondary induction coil, produces.Yet the job information signal that produces on can the first terminal according to secondary induction coil 360_y-1 is confirmed the operating state with overlapping that pixel of test electrode Ey.

Can prepare a virtual test electrode equally, test electrode Ey be gone up the alternating voltage that produces the first terminal of a former limit induction coil that provides separately is provided, and the voltage of virtual test electrode is offered second end of former limit induction coil.The job information signal that produces on the first terminal according to the secondary induction coil that provides separately at also can be confirmed its operating state.Can also in pixel region, provide one not to be actually used in and to show but be used for the virtual pixel of test purpose in addition, allow the virtual pixel can be overlapping with the virtual test electrode.

Be included in the job information signal that produces on the first terminal of secondary induction coil 361_1 with the work state information of the overlapping pixel of test electrode E1.Be included in the job information signal that produces on the first terminal of the first terminal of secondary induction coil 361_j-1 and secondary induction coil 361_j with the work state information of the overlapping pixel of test electrode Ej (j=2 is to y-1).Be included in the job information signal that produces on the first terminal of secondary induction coil 361_y-1 with the work state information of the overlapping pixel of test electrode Ey.

The designer can also correctly be provided with a standard, determines according to the degree of difference between a pixel operating state and the normal pixel operating state whether this pixel work is normal.

The signal processing circuit of using among the present invention is not limited in structure shown in Figure 16.

[embodiment 5]

This embodiment will explain the concrete structure of the waveform shaping circuit in the Implementation Modes 1 with Figure 17.The waveform shaping circuit that should be noted that Implementation Modes 2 also can adopt the structure of present embodiment.

Figure 17 is illustrated in the signal source 201 shown in Fig. 3, and primary coil forms district 101, and secondary coil forms a kind of type of attachment between district 117 and the waveform shaping circuit 116a.Primary coil forms in the district 101 and is provided with a plurality of primary coils 206.Secondary coil forms in the district 117 and is provided with a plurality of secondary coils 207.

Test AC signal from signal source 201 to each one of primary coil 206 input.Specifically, between two terminals that primary coil 206 is had, apply test AC signal voltage from signal source 201.When an AC signal is imported into primary coil 206, will on the secondary coil 207 of correspondence, produce an alternating voltage or electromotive force.This alternating voltage is provided for waveform shaping circuit 116a.

Waveform shaping circuit 116a is an electronic circuit, is used for time quantum is had the voltage or the current waveform shaping of certain variation.Figure 17 has resistance 501,502 and electric capacity 503,504, with the integral form waveform shaping circuit 116a that constitutes of circuit element.Waveform shaping circuit is not limited only to structure shown in Figure 17 certainly.Equally, similarly power circuit adopts the waveform detection circuit of diode also can be used for waveform shaping.

The waveform shaping circuit 116a that adopts among the present invention specifically produces and exports a clock signal (CLK) according to the AC electromotive force of input, and one begins pulse signal (SP) or vision signal.

Waveform shaping circuit 116a produces the signal of random form, is not limited only to above-mentioned signal.Can be used for confirming the operating state of pixel by the signal of waveform shaping circuit 116a generation.

Being imported into late-class circuit from the signal of waveform shaping circuit 116a output for example is signal-line driving circuit 111, scan line drive circuit 112 and pixel region 113.

The enforcement of this embodiment can with embodiment 1 to 4 independent assortment.

[embodiment 6]

Present embodiment will be explained the concrete structure of the rectification circuit 116b in the Implementation Modes 2 with Figure 18.The rectification circuit of Implementation Modes 2 can adopt the structure shown in the present embodiment.

Figure 18 is illustrated in the AC power 202 shown in Fig. 3, and primary coil forms district 101, and secondary coil forms a kind of type of attachment between district 117 and the rectification circuit 116b.Primary coil forms in the district 101 and is provided with a plurality of primary coils 206.Secondary coil forms in the district 117 and is provided with a plurality of secondary coils 207.

Test AC signal from AC power 202 to each one of primary coil 206 input.When an AC signal is imported into primary coil 206, will on the secondary coil 207 of correspondence, produce an alternating voltage or electromotive force.This alternating voltage is provided for rectification circuit 116b.

Rectification circuit 116b of the present invention is used for producing from the alternating voltage that provides a kind of circuit of DC power supply voltage.Meaning of DC power supply voltage offers circuit, and the voltage of circuit element or pixel remains on constant height.

Rectification circuit 116b shown in Figure 180 has diode 601, electric capacity 602 and resistance 603.With the ac voltage rectifier of 601 pairs of inputs of diode and convert thereof into direct voltage.

Figure 19 A represent alternating voltage in diode 601 before over commutation over time.Figure 19 B represent after the rectification voltage over time.Between Figure 19 A and 19B, compare as seen, in the interval of a half period, have zero or unipolar value, just a kind of pulse voltage through the voltage behind the over commutation.

Pulse voltage shown in Figure 19 B is difficult to be used as supply voltage.Therefore often to utilize the storage effect paired pulses of electric capacity to carry out level and smooth and convert direct voltage to.Yet,, just need unrealistic ground to increase the area of electric capacity greatly for the electric capacity that is enough to level and smooth this pulse with thin film semiconductor's formation capacity.Therefore, the present invention is after rectification that phase place is different pulse voltage combination (addition) to together and smooth voltage.Even the capacity of electric capacity is very little, above-mentioned structure also is enough to level and smooth this pulse.In addition, do not need actually an electric capacity is set just is enough to level and smooth this pulse.

In Figure 18, the AC signal that phase place is different is input to four primary coils respectively, in four pulse voltages that phase place is different of four diodes, 601 outputs.These four pulse voltages are added in and form one together and highly roughly keep constant DC source voltage, can output to late-class circuit.

Although Figure 18 adds four different pulse signals of phase place that four diodes 601 are exported to form a supply voltage together, the present invention is not limited only to this structure.The quantity that phase place is divided is not limited only to this.As long as can be with the output smoothing of rectification circuit to can be used as the degree that a power supply uses, the quantity that phase place is divided just without limits.

Figure 20 A-20C represents a plurality of rectified signals are added together the supply voltage that obtains over time.The example that Figure 20 A represents is that four different pulse voltages of phase place are added the supply voltage that together produces.

Produce voltage owing to rectification circuit of the present invention adds a plurality of pulses, composition in addition fluctuates except direct current in the voltage together.Fluctuation corresponding poor between ceiling voltage and the minimum voltage.It is more little to fluctuate, and the voltage that DC circuit produces is the approaching more direct current that is suitable as supply voltage just.

Figure 20 B represents eight different pulse voltages of phase place are added together the supply voltage that obtains over time.The time of the supply voltage shown in fluctuation ratio Figure 20 A changes little as can be seen.

Figure 20 C represents 16 different pulse voltages of phase place are added together the supply voltage that obtains over time.The time of the supply voltage shown in fluctuation ratio Figure 20 B changes also little as can be seen.

In this manner just as can be seen, many pulses that phase place is different add and just can reduce the fluctuation of supply voltage together and become direct current.Therefore, along with the increase of phase place division numbers, more and more level and smooth from the supply voltage of rectification circuit output.Equally, along with the increase of electric capacity 602 capacity, also more and more level and smooth from the supply voltage of rectification circuit output.

The supply voltage that rectification circuit 116b produces is by

terminal

610 and 611 outputs.Specifically, near earthy voltage, export supply voltage by terminal 610 outputs with positive polarity by terminal 611.Be connected if the anode of diode put upside down with negative electrode, just can change the polarity of output supply voltage.Being connected to the anode of the diode 602 on

terminal

610 and 611 and negative electrode is reversed and is connected on the diode 601 that is connected on terminal 612 and 613.So just can export near earthy voltage, and export supply voltage with negative polarity by terminal 613 by terminal 612.

By the way, on device substrate, be provided with various circuit or circuit element.Offer the height difference of the supply voltage of circuit or circuit element, this depends on the type and the purposes of circuit or circuit element.In rectification circuit shown in Figure 180, just can regulate the voltage height that is input to each terminal by the amplitude of regulating input exchange signal.In addition, also can connect the height that changes supply voltage by changing terminal.

The rectification circuit that the present invention adopts is not limited only to half-wave rectifying circuit shown in Figure 180.The rectification circuit that the present invention adopts is a kind of circuit that can produce DC power supply voltage from the AC signal of input.

Figure 21 A-21B represents to construct the circuit diagram with different other rectification circuit shown in Figure 180.Rectification circuit shown in Figure 21 A is a kind of multiplication of voltage full-wave rectifying circuit 901 with two diodes 902 and 903.And the multiplication of voltage full-wave rectifying circuit shown in Figure 21 A has electric capacity 904 and 905.The position of electric capacity and quantity are not limited in the situation shown in Figure 21 A.

The anode of diode 902 and negative electrode and diode 903 all is connected to a terminal of secondary coil.If a plurality of multiplication of voltage full-wave rectifying circuits 901 are provided and its output is added together, the direct voltage that is obtained just can reach two times of half-wave rectifying circuit shown in Figure 180.

Rectification circuit shown in Figure 21 B is a kind of bridge rectifier 911 with four diodes 912,913914 and 915.Four

diodes

912,913914 and 915 form an electric bridge.Bridge rectifier shown in Figure 21 B has electric capacity 916 equally.The position of electric capacity and quantity are not limited in the situation shown in Figure 21 B.

The enforcement of this embodiment can with embodiment 1 to 5 independent assortment.

[embodiment 7]

Present embodiment is that example is explained test drive signal and supply voltage in detail with common luminescent device.

Figure 22 represents to be used for the structure of a kind of oled panel of common luminescent device.Figure 22 is an example of explaining a kind of drive circuit of using the luminescent device display image with digital video signal.Oled panel shown in Figure 22 has signal-line driving circuit 700, scan line drive circuit 701 and pixel region 702.

Pixel region 702 is provided with many holding wires, many scan lines and many power lines.By holding wire, scan line and power line area surrounded correspondence a pixel.Figure 22 has only schematically shown a pixel that has 707, one scan lines 709 of a signal line and a power line 708 in the middle of numerous pixels.Each pixel has 704, one storage capacitances 705 of 703, one drive TFT of switching TFT and the OLED pixel capacitors 706 as switch element.

The gate electrode of switching TFT 703 is connected to scan line 709.One of the source electrode of switching TFT 703 and drain region are connected to holding wire 707, and the opposing party is connected to the gate electrode of drive TFT 704.

One of the source electrode of drive TFT 704 and drain region are connected to power line 708, and the opposing party is connected to pixel capacitors 706.The gate electrode of drive TFT 704 and power line 704 form a storage capacitance 705.Sometimes do not need to form storage voltage 705.

Signal-line driving circuit 700 has shift register 710, the first latchs 711 and second latch 712.Shift register 710, the first latchs 711 and second latch 712 each have a power supply.The clock signal (S-CLK) and the beginning pulse signal (S-SP) that will be used for signal-line driving circuit simultaneously offer shift register 710.For providing a latch signal, first latch 711 determines to latch timing with vision signal.

When clock signal (S-CLK) and beginning pulse signal (S-SP) when being imported into shift register 710, will produce a sampled signal that is used for determining the sample video signal timing, and be input to first latch 711.

Can be input to first latch 711 after the buffering-amplification of sampled signal from shift register 710 through buffer or the like.The interconnection point of input sample signal is connected to many circuit or circuit element, thereby its load capacitance (parasitic capacitance) is very big.Buffer can effectively prevent the forward position of timing signal or " weakening " that cause because of heavy load electric capacity on the edge, back.

First latch 711 has multistage latch.First latch 711 is sampled to incoming video signal with input sample signal Synchronization ground, and is stored in order in the latchs at different levels.

The reference in line cycle is the required time of all latchs at different levels that a vision signal is write first latch 711.In fact, this line cycle also comprises the line cycle of the time that adds a horizontal flyback period in some cases.

Finishing a line after the cycle, a latch signal is imported into second latch 712.In this example, the vision signal that writes and remain on first latch 711 is sent to second latch 712 immediately, and is written into and remains on all back level latchs of second latch 712.

In order a vision signal is write first latch 711 that vision signal is sent to second latch 712 according to sampled signal from shift register 710.

In cycle, the vision signal that writes and remain on second latch 712 is imported into the source signal line at second line.

On the other hand, scan line drive circuit 701 has a shift register 721 and a buffer 722.For shift register 721 and buffer 722 provide power supply.Be provided for the clock signal (G-CLK) and the beginning pulse signal (G-SP) of scan line drive circuit simultaneously for shift register 721.

On power line 708, apply alternating voltage.

When clock signal (G-CLK) and beginning pulse signal (G-SP) when being imported into shift register 721, just produce one and be used for determining scanning line selection selection signal regularly, and be input to buffer 722.The selection signal that is input to buffer 722 is cushioned-amplifies and be input to scan line 709.

Selected scan line 709 turn-on grid electrode electrodes are connected that switching TFT 703 on the selected scan line 709.The vision signal that is input to holding wire is input to the gate electrode of drive TFT 704 by the switching TFT 703 of conducting.

Come the switch of controlling and driving TFT704 according to the information that vision signal had 1 or 0 that is input to gate electrode.When drive TFT 704 conductings, the alternating voltage on the power line is provided for pixel capacitors.When drive TFT 704 was turn-offed, the alternating voltage on the power line can not offer pixel capacitors.

In such a manner, when signal-line driving circuit 700, when scan line drive circuit 701 and pixel region 702 operations, there is an alternating voltage to be applied on the pixel capacitors, will on test electrode 730, produces an alternating voltage that comprises this pixel job information like this.Confirm the pixel job information according to the alternating voltage that on test electrode 730, produces, and definite pixel is normal/abnormal.

In addition, pixel itself does not have defective even break down on drive circuit, and the magnitude of voltage that is applied on the pixel capacitors will change.So just can determine the normal/abnormal of drive circuit.

For oled panel shown in Figure 22, S-CLK, S-SP, G-CLK, G-SP, latch signal and vision signal all input to each circuit as the test drive signal.But the test drive signal is not limited only to above-mentioned signal.Any signal relevant with driving can be used as the test drive signal.For example, except above-mentioned signal, the switch that can also determine a direction on the scan line with input signal regularly or is used for the signal of input direction of switched scan line options signal.Yet importantly Shu Ru signal is wanted to confirm the operating state of tested pixel, or can determine that it is normal/abnormal.

At test a part of pixel that OLED had rather than test under the situation of all pixels, it is just enough that only input is used for driving the drive signal of a part of pixel only.Do not need to import all above-mentioned drive signals.

It should be noted that if the pulse signal of out of phase added produce a supply voltage together the quantity of the pulse signal of the quantity of primary coil addition with the need and different.

Testing apparatus of the present invention and method are not limited only to have the oled panel of structure shown in Figure 22.

The enforcement of this embodiment can with embodiment 1 to 6 independent assortment.

[embodiment 8]

Present embodiment will be explained with a large-sized substrate and form a plurality of display substrate by the cutting substrate after test.

Figure 23 represents the top view of a large-sized substrate before cutting in the present embodiment.The 1001st, pixel region, the 1002nd, scan line drive circuit, the 1003rd, signal-line driving circuit.Also be provided with in the zone shown in 1004 and only be used for testing procedure and finish circuit or the circuit element that does not re-use after the test, just a plurality of secondary coils, waveform shaping circuit, rectification circuit, dedicated test circuit or the like.

In Figure 23,, form nine display substrate by a substrate along the cutting of the line shown in dotted line substrate.By the way, although the example that present embodiment is represented is to form nine display substrate with a substrate, present embodiment also is not limited only to this quantity.

The meaning of cutting is from physics and electric disconnection secondary coil and connector in cutting process.In Figure 23, zone 1004 is arranged on the substrate and is not used on that side of display after cutting.

How to explain the cutting large size substrate with an embodiment who is different from Figure 23 below.In Figure 24, the 1101st, pixel region, the 1102nd, scan line drive circuit, the 1103rd, signal-line driving circuit.Also be provided with in the zone shown in 1104 and only be used for testing procedure and finish circuit or the circuit element that does not re-use after the test, just a plurality of secondary coils, waveform shaping circuit, rectification circuit, dedicated test circuit or the like.

In Figure 24,, form nine display substrate by a substrate along the cutting of the line shown in dotted line substrate.By the way, although the example that present embodiment is represented is to form nine display substrate with a substrate, present embodiment also is not limited only to this quantity.

Notice that cutting and disconnection are from physics and electric disconnection secondary coil and connector in cutting process.In Figure 24, zone 1104 is arranged on the line of cut of substrate, and is cut off after test.Because just no longer needed to be formed on circuit in the zone 1194 or circuit element after test, the semiconductor device of making can not break down at work.

Waveform shaping circuit or rectification circuit are used as semiconductor device and are used can staying after the cutting on the substrate, or stay and do not do semiconductor device on the substrate and use.Otherwise the circuit after the cutting will rupture.

The enforcement of this embodiment can with embodiment 1 to 7 independent assortment.

[embodiment 9]

Present embodiment is explained operating sequence in the testing procedure of the present invention with a flow chart.

Figure 25 represents the flow chart of testing procedure of the present invention.At first, after the manufacturing step before finishing test, non-contiguously circuit on the device substrate or circuit element are applied testing power supply voltage or drive signal voltage.

As a result of, allow and carry out certain work as the pixel of tested object, with the overlapping test electrode of pixel on produce a alternating voltage with pixel work state information.When changing the test electrode position, repeatedly monitor this alternating voltage.

Confirm the pixel operating state according to the alternating voltage that on test electrode, produces, and definite pixel is normal/abnormal.The pixel operating state not necessarily will be sieved normal and unusual two kinds, can also sieve into a plurality of grades according to operating state.

Simultaneously, it is accurate that the professional can also correctly be provided with the normal/abnormal calibration really of pixel.Be confirmed as under the unusual situation at some pixel, the professional can also correctly be provided with how to come to determine that device substrate can use.Even there is an abnormal picture element also can determine unusually, or when abnormal picture element reaches some, be defined as unusual.

Determining under the normal situation, after testing procedure, just considering to finish test and beginning installation step.

If define unusually, just select from the still uncompleted step of product, to remove (abandoning), or determine unusual reason.If make a plurality of products, can after the cutting substrate, abandon again with large-sized substrate.

If define unusual and might keep in repair, can after maintenance, repeat aforesaid operations and carry out testing procedure of the present invention once more.Otherwise,, just abandon at this moment if determine and can not keep in repair.

The enforcement of this embodiment can with embodiment 1 to 8 independent assortment.

[embodiment 10]

Present embodiment will be explained the coil that uses among the present invention, the terminal that coil had, and the concrete connected mode between the interconnection point (coil interconnection point).

In Figure 26 A, coil 1601 is formed on the insulating surfaces, and forms a layer insulation film 1603 and cover coil 1601 on the insulating surfaces.In the layer insulation film, form a contact hole, on the layer insulation film, form the coil interconnection point 1602 that is connected to coil 1601 by contact hole.

Figure 26 B represents the sectional view of chain-dotted line C-C ' in Figure 26 A.

In Figure 26 C, on an insulating surfaces, form coil interconnection point 1612.Form a layer insulation film 1613 and cover coil interconnection point 1612 on the insulating surfaces.In the layer insulation film, form a contact hole, on the layer insulation film, form a coil 1611 that is connected to coil interconnection point 1612 by contact hole.

Figure 26 D represents the sectional view of chain-dotted line D-D ' in Figure 26 C.

The manufacture method of the coil of Cai Yonging is not limited only to said method in the present invention.Just can form a kind of volution trough to an insulation film composition.Form a conductive film and cover groove on the insulation film.Grind conductive film by etching or CMP technology then,, only stay the conductive film in the groove until exposing insulation film.The conductive film of staying in the groove can be used as coil.

[embodiment 11]

Present embodiment will explain how to carry out the method for testing with the Walsh function in the Implementation Modes 1, thereby whether each pixel work of determining is normal.

Situation described in the present embodiment is the luminescent device with 4 * 4 pixels.Wanting quantification for the luminescent device with 4 * 4 pixels is 16 group of functions W of 16 ₀₀(4,4) are to W ₃₃(4,4) (below write a Chinese character in simplified form into W ₀₀And W ₃₃).

Figure 27 specifically represents with these group of functions W ₀₀And W ₃₃The position of each pixel of operation.The pixel of representing with blank is different with the magnitude of voltage that the pixel with shadow representation is applied on the test electrode.

If use group of functions W ₀₀And W ₃₃Operate these pixels in order, quantity is that 4 * 4 pixel differs from one another at work.Therefore, even make test electrode and these pixels overlapping, also can determine whether each pixel work is normal by test according to pixel with same scan line.

Be example for example, in pixel (1,1), suppose to be expressed as blank pixel with 0 that be expressed as the pixel of shade with X, all situations are 0 all just with the pixel on article one line.With pixel (2,1) is example, can be expressed as 00XX00XX00XX00XX in order.Pixel (3,1) can be expressed as 0XX00XX00XX00XX0 in order.Pixel (4,1) can be expressed as 0X0X0X0X0X0X0X in order.

If all pixels are operate as normal all, 0 quantity basis function separately can be expressed as 4,2,2,2,4,2,2,2,4,2,2,2,4,2,2,2 in order in the pixel on article one line.If pixel (2,1) cisco unity malfunction, thus demonstrate shade all the time, and 0 quantity basis function separately just can be expressed as 3,1,2,2,3,1,2,2,3,1,2,2,3,1,2,2 in order in the pixel on article one line.Like this, by the situation of operate as normal all of all pixels relatively, just can determine pixel (2,1) cisco unity malfunction.

Although present embodiment has adopted two-dimentional Walsh function, also can operate each pixel with one dimension Walsh function.In this case, can have the operating state of the above-mentioned luminescent device of 4 * 4 pixels with four group of functions tests.

The enforcement of this embodiment can with embodiment 1 to 9 independent assortment.

The present invention adopts above-mentioned structure just can determine normal/abnormal as a pixel of tested object, need not directly use probe on interconnection point or probe terminal.So just can prevent to reduce the output of following process because of the fine dust of using probe to cause.In addition, owing to just can determine normal/abnormal in each composition formation step, can simplify testing procedure with a testing procedure.

Claims

1. the method for a measuring voltage comprises:

Apply the test AC signal to primary coil;

In response to apply described test AC signal to primary coil, between the two ends of secondary coil, induce alternating voltage, and not contact between primary coil and secondary coil;

Apply described alternating voltage to first electrode;

Measure second voltage of second electrode, described second voltage is set to adjacent with described first electrode by described second electrode and has therebetween at interval induce.

2. according to the process of claim 1 wherein that described primary coil and described second electrode are formed on the same substrate.

3. according to the process of claim 1 wherein that described secondary coil and described first electrode are formed on the same substrate.

4. according to the process of claim 1 wherein that described first electrode is the pixel electrode of display unit.

5. the method for a test voltage comprises:

Apply the test AC signal by outside input buffer to primary coil;

Apply described alternating voltage to first electrode;

6. according to the method for claim 5, wherein said primary coil, described second electrode and described outside input buffer are formed on the same substrate.

7. according to the method for claim 5, wherein said secondary coil and described first electrode are formed on the same substrate.

8. according to the method for claim 5, wherein said first electrode is the pixel electrode of display unit.

9. the method for a test voltage comprises:

Apply the test AC signal to primary coil;

Described alternating voltage is input to waveform shaping circuit, produces second alternating voltage thus;

Apply described second alternating voltage to first electrode;

Measure the tertiary voltage of second electrode, described tertiary voltage is set to adjacent with described first electrode by described second electrode and has therebetween at interval induce.

10. according to the method for claim 9, wherein said primary coil and described second electrode are formed on the same substrate.

11. according to the method for claim 9, wherein said secondary coil, described waveform shaping circuit and described first electrode are formed on the same substrate.

12. according to the method for claim 9, wherein said first electrode is the pixel electrode of display unit.

13. the method for a test voltage comprises:

Apply the test AC signal to primary coil;

Described alternating voltage is input to rectifier circuit, produces second voltage thus;

Apply described second voltage to first electrode;

14. according to the method for claim 13, wherein said primary coil and described second electrode are formed on the same substrate.

15. according to the method for claim 13, wherein said secondary coil, described rectifier circuit and described first electrode are formed on the same substrate.

16. according to the method for claim 13, wherein said first electrode is the pixel electrode of display unit.