JPH06349913A - Non-contact monitoring method for burn-in test - Google Patents

Abstract

PURPOSE:To provide a burn-in monitoring method, with which the operating state of a semiconductor device can be monitored without providing, a monitoring terminal dedicated to a burn-in board, used to ascertain whether the operation of a semiconductor device is normal or not in a burn-in test to be conducted to remove the initial defect of the semiconductor device. CONSTITUTION:The electromagnetic waves generated while a burn-in test is being conducted on a semiconductor device 2 is detected by placing an electromagnetic wave detection microscopic antenna 8 to or adhering it the semiconductor device 2, the frequency component of the electromagnetic wave and the amplitude corresponding to the respective frequency component are compared with the amplitude generated by the normal semiconductor device, and the operation of the semiconductor device 2 is judged as normal when the above- mentioned two amplitudes coincide.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monitor method for confirming whether or not a semiconductor device operates normally in a burn-in test carried out to eliminate an initial failure of the semiconductor device.

[0002]

2. Description of the Related Art In order to improve the quality of semiconductor devices,
A burn-in test is performed for the purpose of effectively eliminating the initial failure. The burn-in test is to detect an initial defect in a short time by operating the semiconductor device in a state where an ambient temperature and a power supply voltage higher than the rated conditions are applied.

In order to further improve the quality of a semiconductor device, a burn-in board on which a semiconductor device to be burned-in is mounted is defective, a contact failure between the semiconductor device and the burn-in board, or a burn-in device ( Of the equipment required for the burn-in test, the part other than the burn-in board is called the burn-in equipment.) The semiconductor device must not be operating abnormally during burn-in due to a defect. It is necessary to monitor the operating status of.

As a conventional monitoring method, as shown in FIG. 2, a semiconductor device 2 is mounted on a burn-in board, placed in a temperature-controlled room (not shown) and heated, and a data input signal is sent to each semiconductor device 2. A method is used in which a reset signal, a clock signal, and the like are input for operation, and an oscilloscope or the like is connected to a monitor terminal 3 which is a collection of output terminals of the semiconductor device 2 to monitor the output waveform of each semiconductor device.

Further, as shown in FIG. 3, a data input terminal, a reset input terminal, a clock input terminal and a monitor terminal are collectively arranged on one side of the burn-in board 1 and a data input signal, a reset signal, a clock signal, etc. A method of connecting and monitoring a monitor device (not shown) having a generating circuit and a monitor function is also used.

[0006]

In order to monitor the voltage waveform of the output terminal for each semiconductor device, it is necessary to provide the burn-in board 1 with the dedicated monitor terminal 3. Therefore, the burn-in board 1 is complicated and expensive, and
Burn-in board 1 due to restrictions on the number of monitor terminals 3
There is a problem that the number of semiconductor devices that can be mounted on the device is limited.

An object of the present invention is to eliminate these drawbacks, and it is an object of the present invention to provide a burn-in monitoring method capable of monitoring the operating state of a semiconductor device without providing a dedicated monitor terminal on the burn-in board.

[0008]

SUMMARY OF THE INVENTION The above object is to make an electromagnetic wave detecting minute antenna (8) close to or in close contact with a semiconductor device (2) so that the electromagnetic wave generated during the burn-in test is generated by the semiconductor device (2). The frequency components of this electromagnetic wave and the amplitudes corresponding to the respective frequency components are detected and compared with the frequency components of the electromagnetic wave generated by a normal semiconductor device and the amplitudes corresponding to the respective frequency components, and the fact that they agree This is achieved by a burn-in non-contact monitoring method that determines that the operation of the semiconductor device (2) is normal.

[0009]

The principle of operation of the present invention is shown in FIG.

When the semiconductor device operates, a current corresponding to the operation of the input / output terminal and the power supply terminal flows. The electromagnetic waves generated by the current flowing through the IC chip 4, the bonding wires 5, and the leads 6 sealed in the IC package 7 are detected by the antenna 8 that is close to or in close contact with the IC package 7 at a distance of 20 mm or less. The detected electromagnetic wave is amplified by the amplifier 9 and analyzed using the frequency / level analyzer 10 to obtain the frequency component and the amplitude corresponding to each frequency component, and the electromagnetic wave generated during normal operation of the semiconductor device The comparator 11 compares the frequency components and the amplitudes corresponding to the respective frequency components to monitor whether or not the semiconductor device is operating under normal burn-in conditions.

By comparing the frequency / amplitude data at the start of burn-in, during burn-in, and at the end of burn-in with the comparison data, it is possible to monitor at which point during the burn-in an abnormality has occurred in the semiconductor device.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A burn-in monitoring method according to two embodiments of the present invention will be described below with reference to the drawings.

First Example See FIG. 4 In FIG. 4, the same members as those shown in FIG. 2 are indicated by the same symbols. The semiconductor device 2 to be subjected to the burn-in test is mounted on the burn-in board 1 and placed in a temperature-controlled room (not shown) for heating to supply a power supply voltage, a data input signal, a reset signal, a clock signal, etc. Enter to set burn-in conditions. As a result, the semiconductor device 2 operates under the determined burn-in conditions.

An electromagnetic wave generated by a current flowing through an IC chip, a bonding wire and an IC lead is detected by an antenna 8 which is placed close to a semiconductor device, and amplified by an amplifier 9. The amplified signal is analyzed using a frequency / level analyzer 10 such as a spectrum analyzer to obtain a frequency component and an amplitude corresponding to each frequency component, and this is generated in a comparator 11 in a semiconductor device that operates normally. It is determined whether or not the semiconductor device is operating under normal burn-in conditions by comparing with comparison data composed of frequency components of electromagnetic waves and amplitudes corresponding to the respective frequency components.

This burn-in test comprehensively evaluates the quality of the burn-in board (including the quality of the socket and the quality of the contact state) and the quality of the supply state of the power supply voltage, the clock signal, the reset signal, the data input signal, etc. It monitors whether or not the device is operating under normal burn-in conditions, and is monitored under the following conditions.

At the start of burn-in At the start of burn-in, it is confirmed whether or not each semiconductor device is operating under the correct burn-in condition, and an alarm is issued to the semiconductor device which is not under the correct burn-in condition.

During burn-in During the burn-in, a constant cycle or constant monitoring is performed,
The time and the timing at which the malfunction occurs are stored for each semiconductor device, and are distinguished from normal semiconductor devices.

At the end of burn-in Confirm that the burn-in is working normally,
Distinguish from defective products.

Second Example See FIGS. 5 and 6 In FIGS. 5 and 6, the same members as those shown in FIG. 4 are denoted by the same symbols. As shown in FIG. 6, a monitor board 12 having an antenna 8 formed at a position corresponding to each of the semiconductor devices 2 mounted on the burn-in board 1 is brought close or close to the burn-in board 1 to generate each semiconductor device 2. The generated electromagnetic waves are sequentially switched and detected by the multiplexer 13. The subsequent monitoring process is the same as in the first example. In FIG. 6, 14 is an IC socket and 15 is an IC package.

Referring to FIG. 7, an example of a method of forming the antenna formed on the monitor board 12 will be described below. For example, a through hole is formed in the antenna formation position of a double-sided printed circuit board where copper plates are adhered to both sides of a glass epoxy resin plate, electroplating processing is performed, and a conductor is formed in the through hole to connect the copper plates on both sides to each other. Connect to. Next, the copper plate on one surface is etched and left in the shaded area in FIG. 4A, and the antenna lead 16 having its tip connected to the conductor in the through hole is formed. Next, the copper plate on the opposite surface is etched to form a spiral antenna 8 and a lead lead connected to the spiral antenna 8 as shown in FIG. The ends of the leads 16 formed on the surface opposite to the center of the spiral antenna 8 are connected to each other via a conductor formed in the through hole.

Using such a monitor board 12,
If the multiplexer 13 is used to sequentially switch the electromagnetic waves generated by each semiconductor device 2 to detect and compare with the comparison data, it is not necessary to move the antenna 8 onto the semiconductor device 2 to be monitored. Moreover, since there are no moving parts, it is effective for automating the monitor work and saving labor. It is needless to say that the frequency / level analyzer 10 and the comparator 11 may be separately provided for each antenna 8 without providing the multiplexer 13.

[0022]

As described above, in the burn-in non-contact monitoring method according to the present invention, the electromagnetic wave generated from the semiconductor device at the time of burn-in is detected by the antenna, and its frequency component and the amplitude corresponding to each frequency component are detected. Since it is determined whether or not the semiconductor device is operating under normal burn-in conditions by comparing with those generated by the normally operating semiconductor device, it is possible to monitor the operation of the semiconductor device in a non-contact manner.
The burn-in board does not need to be provided with a dedicated monitor terminal for checking the operation of the semiconductor device, which simplifies the process. Also, instead of just judging the pass / fail by the output signal from the semiconductor device as in the past, it monitors the entire process of the operation of the semiconductor device, improving the accuracy of the burn-in monitor and improving the quality of the semiconductor device. It greatly contributes to the improvement.

[Brief description of drawings]

FIG. 1 is a diagram illustrating the operating principle of the present invention.

FIG. 2 is an explanatory diagram of a conventional burn-in monitoring method.

FIG. 3 is an explanatory diagram of a conventional burn-in monitoring method.

FIG. 4 is an explanatory diagram of a burn-in monitoring method according to the present invention.

FIG. 5 is an explanatory diagram of a burn-in monitoring method according to the present invention.

FIG. 6 is an explanatory diagram of a burn-in monitoring method according to the present invention.

FIG. 7 is an explanatory view of the manufacturing method of the monitor antenna.

[Explanation of symbols]

 1 Burn-in Board 2 Semiconductor Device 3 Monitor Terminal 4 IC Chip 5 Bonding Wire 6 Lead 7 IC Package 8 Antenna 9 Amplifier 10 Frequency / Level Analyzer 11 Comparator 12 Monitor Board 13 Multiplexer 14 IC Socket 15 IC Package 16 Lead

Claims (1)

[Claims] 1. An electromagnetic wave detecting micro-antenna (8) is placed close to or in close contact with a semiconductor device (2) to detect an electromagnetic wave generated during the burn-in test by the semiconductor device (2). The amplitudes corresponding to the respective frequency components are compared with the frequency components of the electromagnetic wave generated by a normal semiconductor device and the amplitudes corresponding to the respective frequency components, and when the two coincide, the operation of the semiconductor device (2) is normal. A non-contact monitoring method of burn-in, characterized by determining that there is.