SG10202004783VA - Vertical memory devices and methods of manufacturing the same - Google Patents

Vertical memory devices and methods of manufacturing the same

Info

Publication number
SG10202004783VA
SG10202004783VA SG10202004783VA SG10202004783VA SG10202004783VA SG 10202004783V A SG10202004783V A SG 10202004783VA SG 10202004783V A SG10202004783V A SG 10202004783VA SG 10202004783V A SG10202004783V A SG 10202004783VA SG 10202004783V A SG10202004783V A SG 10202004783VA
Authority
SG
Singapore
Prior art keywords
manufacturing
methods
same
memory devices
vertical memory
Prior art date
Application number
SG10202004783VA
Inventor
Kim Bio
Kim Yujin
Nam Philouk
Son Youngseon
An Kyongwon
Yun Jumi
Jang Woojin
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10202004783VA publication Critical patent/SG10202004783VA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02249—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by combined oxidation and nitridation performed simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
SG10202004783VA 2019-07-30 2020-05-22 Vertical memory devices and methods of manufacturing the same SG10202004783VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190092525A KR20210014440A (en) 2019-07-30 2019-07-30 Vertical memory devices and methods of manufacturing the same

Publications (1)

Publication Number Publication Date
SG10202004783VA true SG10202004783VA (en) 2021-02-25

Family

ID=74174959

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202004783VA SG10202004783VA (en) 2019-07-30 2020-05-22 Vertical memory devices and methods of manufacturing the same

Country Status (5)

Country Link
US (2) US11329063B2 (en)
KR (1) KR20210014440A (en)
CN (1) CN112310110A (en)
DE (1) DE102020110361B4 (en)
SG (1) SG10202004783VA (en)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343469B2 (en) 2012-06-27 2016-05-17 Intel Corporation Three dimensional NAND flash with self-aligned select gate
US8658499B2 (en) 2012-07-09 2014-02-25 Sandisk Technologies Inc. Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device
US8614126B1 (en) 2012-08-15 2013-12-24 Sandisk Technologies Inc. Method of making a three-dimensional memory array with etch stop
KR20150001999A (en) 2013-06-28 2015-01-07 에스케이하이닉스 주식회사 Semiconductor memory device and method of manufacturing the same
US9953995B2 (en) 2015-07-20 2018-04-24 Schiltron Corporation Independent vertical-gate 3-D NAND memory circuit
KR102509915B1 (en) * 2015-08-31 2023-03-15 삼성전자주식회사 Semiconductor memory device
KR102413766B1 (en) 2015-09-08 2022-06-27 삼성전자주식회사 Non-volatile memory device and method for fabricating the same
US9812463B2 (en) 2016-03-25 2017-11-07 Sandisk Technologies Llc Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof
KR20180012640A (en) * 2016-07-27 2018-02-06 삼성전자주식회사 Vertical memory device and method of manufacturing the same
US10995269B2 (en) 2016-11-24 2021-05-04 Samsung Electronics Co., Ltd. Etchant composition and method of fabricating integrated circuit device using the same
KR102424391B1 (en) 2016-11-24 2022-08-05 삼성전자주식회사 Etchant compositions and methods of manufacturing integrated circuit device using the same
KR101970316B1 (en) 2017-07-20 2019-04-18 고려대학교 산학협력단 Three-dimensional NAND flash memory and manufacturing method thereof
US10903221B2 (en) 2017-12-27 2021-01-26 Micron Technology, Inc. Memory cells and memory arrays

Also Published As

Publication number Publication date
US20220238555A1 (en) 2022-07-28
KR20210014440A (en) 2021-02-09
US11329063B2 (en) 2022-05-10
DE102020110361A1 (en) 2021-02-04
US20210036012A1 (en) 2021-02-04
DE102020110361B4 (en) 2023-03-09
CN112310110A (en) 2021-02-02

Similar Documents

Publication Publication Date Title
SG10201911469VA (en) Vertical Memory Devices And Methods Of Manufacturing The Same
SG10202007030PA (en) Semiconductor Memory Devices And Methods Of Operating The Semiconductor Memory Devices
GB2569038B (en) Display device and method of manufacturing the same
SG11202104885PA (en) Novel 3d nand memory device and method of forming the same
EP3711091A4 (en) Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
SG10202006188PA (en) Semiconductor memory devices and methods of fabricating the same
ZA201808411B (en) Container and method of manufacturing the same
SG10201907825PA (en) Three-dimensional semiconductor memory devices and methods of fabricating the same
PL3614460T3 (en) Separator and method of manufacturing the same
EP3692582A4 (en) Perovskite devices and methods of making the same
SG10201907458SA (en) Semiconductor device and method of manufacturing the same
SG10201912041UA (en) Memory device and method of forming the same
SG11202104949WA (en) Meta-lens structure and method of fabricating the same
EP3646188A4 (en) Methods of memory address verification and memory devices employing the same
SG11202008353RA (en) Memory cell and method of forming the same
SG10201905833RA (en) Semiconductor device and manufacturing method of the semiconductor device
SG11202103709VA (en) Semiconductor structure and method of forming the same
SG11201912251XA (en) Memory cells having resistors and formation of the same
GB201809897D0 (en) Photovoltaic devices and methods of manufacturing photovoltaic devices
EP3844813A4 (en) Three-dimensional memory devices and fabrication methods thereof
EP3844814A4 (en) Three-dimensional memory devices and fabrication methods thereof
IL262688B (en) Fluidic devices and methods of manufacturing the same
KR101748949B9 (en) semiconductor memory device and method of fabricating the same
SG10202006562UA (en) Three-dimensional semiconductor devices and methods of fabricating the same
SG10202005368UA (en) Memory device and method of operating the memory device