SG10201906089PA - Low oxide trench dishing chemical mechanical polishing - Google Patents
Low oxide trench dishing chemical mechanical polishingInfo
- Publication number
- SG10201906089PA SG10201906089PA SG10201906089PA SG10201906089PA SG10201906089PA SG 10201906089P A SG10201906089P A SG 10201906089PA SG 10201906089P A SG10201906089P A SG 10201906089PA SG 10201906089P A SG10201906089P A SG 10201906089PA SG 10201906089P A SG10201906089P A SG 10201906089PA
- Authority
- SG
- Singapore
- Prior art keywords
- mechanical polishing
- chemical mechanical
- oxide trench
- low oxide
- trench dishing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862692633P | 2018-06-29 | 2018-06-29 | |
US201862692639P | 2018-06-29 | 2018-06-29 | |
US16/450,784 US11078417B2 (en) | 2018-06-29 | 2019-06-24 | Low oxide trench dishing chemical mechanical polishing |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201906089PA true SG10201906089PA (en) | 2020-01-30 |
Family
ID=67137872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201906089PA SG10201906089PA (en) | 2018-06-29 | 2019-06-29 | Low oxide trench dishing chemical mechanical polishing |
Country Status (8)
Country | Link |
---|---|
US (2) | US11078417B2 (en) |
EP (1) | EP3587525B1 (en) |
JP (1) | JP7121696B2 (en) |
KR (1) | KR20200002708A (en) |
CN (1) | CN110655870A (en) |
IL (1) | IL267717A (en) |
SG (1) | SG10201906089PA (en) |
TW (1) | TWI811389B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021231090A1 (en) * | 2020-05-11 | 2021-11-18 | Versum Materials Us, Llc | Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes |
CN115449345B (en) * | 2022-08-29 | 2023-08-22 | 内蒙古科技大学 | Preparation method of mesoporous cerium oxide coated polystyrene nano-composite abrasive under microwave condition |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5028620A (en) * | 1988-09-15 | 1991-07-02 | Rohm And Haas Company | Biocide composition |
US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6964923B1 (en) | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
US6616514B1 (en) | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
JP4206233B2 (en) * | 2002-07-22 | 2009-01-07 | 旭硝子株式会社 | Abrasive and polishing method |
KR100637772B1 (en) | 2004-06-25 | 2006-10-23 | 제일모직주식회사 | High Selectivity CMP slurry for STI Process in Semiconductor manufacture |
WO2010139603A1 (en) * | 2009-06-05 | 2010-12-09 | Basf Se | RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP) |
KR101359092B1 (en) | 2009-11-11 | 2014-02-05 | 가부시키가이샤 구라레 | Slurry for chemical mechanical polishing and polishing method for substrate using same |
EP2614121B1 (en) | 2010-09-08 | 2019-03-06 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
US20130200039A1 (en) | 2010-09-08 | 2013-08-08 | Basf Se | Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts |
EP2649144A4 (en) * | 2010-12-10 | 2014-05-14 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
CN103764775B (en) | 2011-09-07 | 2016-05-18 | 巴斯夫欧洲公司 | Chemically mechanical polishing (CMP) composition that comprises glycosides |
WO2013093557A1 (en) | 2011-12-21 | 2013-06-27 | Basf Se | Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives |
JP6375623B2 (en) * | 2014-01-07 | 2018-08-22 | 日立化成株式会社 | Abrasive, abrasive set, and substrate polishing method |
KR102384583B1 (en) | 2014-12-26 | 2022-04-11 | 솔브레인 주식회사 | Slurry composition for chemical mechanical polishing and method for manufacturing semiconductor device by using the same |
WO2016115096A1 (en) | 2015-01-12 | 2016-07-21 | Air Products And Chemicals, Inc. | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
KR101823083B1 (en) * | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | Surface-modified colloidal ceria abrasive particle, preparing method of the same and polishing slurry composition comprising the same |
WO2018062401A1 (en) | 2016-09-29 | 2018-04-05 | 花王株式会社 | Polishing liquid composition |
-
2019
- 2019-06-24 US US16/450,784 patent/US11078417B2/en active Active
- 2019-06-28 TW TW108122871A patent/TWI811389B/en active
- 2019-06-29 SG SG10201906089PA patent/SG10201906089PA/en unknown
- 2019-06-30 IL IL26771719A patent/IL267717A/en unknown
- 2019-07-01 EP EP19183705.3A patent/EP3587525B1/en active Active
- 2019-07-01 KR KR1020190079024A patent/KR20200002708A/en not_active IP Right Cessation
- 2019-07-01 CN CN201910585893.3A patent/CN110655870A/en active Pending
- 2019-07-01 JP JP2019123181A patent/JP7121696B2/en active Active
-
2021
- 2021-06-22 US US17/354,311 patent/US11667839B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11667839B2 (en) | 2023-06-06 |
US20210324270A1 (en) | 2021-10-21 |
JP7121696B2 (en) | 2022-08-18 |
KR20200002708A (en) | 2020-01-08 |
US11078417B2 (en) | 2021-08-03 |
US20200002608A1 (en) | 2020-01-02 |
EP3587525B1 (en) | 2023-11-22 |
TW202000848A (en) | 2020-01-01 |
CN110655870A (en) | 2020-01-07 |
TWI811389B (en) | 2023-08-11 |
EP3587525A1 (en) | 2020-01-01 |
IL267717A (en) | 2019-10-31 |
JP2020002359A (en) | 2020-01-09 |
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