SG10201902076XA - Honeycomb multi-zone gas distribution plate - Google Patents

Honeycomb multi-zone gas distribution plate

Info

Publication number
SG10201902076XA
SG10201902076XA SG10201902076XA SG10201902076XA SG10201902076XA SG 10201902076X A SG10201902076X A SG 10201902076XA SG 10201902076X A SG10201902076X A SG 10201902076XA SG 10201902076X A SG10201902076X A SG 10201902076XA SG 10201902076X A SG10201902076X A SG 10201902076XA
Authority
SG
Singapore
Prior art keywords
distribution plate
gas distribution
zone gas
honeycomb multi
holes
Prior art date
Application number
SG10201902076XA
Other languages
English (en)
Inventor
Paul Brillhart
Anzhong Chang
Edric Tong
Kin Pong Lo
David K Carlson
Errol Antonio C Sanchez
Zhiyuan Ye
Satheesh Kuppurao
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201902076XA publication Critical patent/SG10201902076XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystallography & Structural Chemistry (AREA)
SG10201902076XA 2014-09-08 2015-08-10 Honeycomb multi-zone gas distribution plate SG10201902076XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462047417P 2014-09-08 2014-09-08
US201562128731P 2015-03-05 2015-03-05

Publications (1)

Publication Number Publication Date
SG10201902076XA true SG10201902076XA (en) 2019-04-29

Family

ID=55436989

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201902076XA SG10201902076XA (en) 2014-09-08 2015-08-10 Honeycomb multi-zone gas distribution plate
SG11201701461TA SG11201701461TA (en) 2014-09-08 2015-08-10 Honeycomb multi-zone gas distribution plate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201701461TA SG11201701461TA (en) 2014-09-08 2015-08-10 Honeycomb multi-zone gas distribution plate

Country Status (6)

Country Link
US (1) US20160068955A1 (zh)
KR (1) KR20170055506A (zh)
CN (2) CN107523806A (zh)
SG (2) SG10201902076XA (zh)
TW (1) TW201622003A (zh)
WO (1) WO2016039909A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106463344B (zh) * 2014-05-16 2019-10-11 应用材料公司 喷头设计
KR102493945B1 (ko) * 2017-06-06 2023-01-30 어플라이드 머티어리얼스, 인코포레이티드 Teos 유동의 독립적 제어를 통한 증착 반경방향 및 에지 프로파일 튜닝가능성
EP4268271A1 (en) * 2020-12-22 2023-11-01 Mattson Technology, Inc. Workpiece processing apparatus with gas showerhead assembly
US11959173B2 (en) 2021-03-18 2024-04-16 Asm Ip Holding B.V. Methods of forming structures, semiconductor processing systems, and semiconductor device structures

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100492258B1 (ko) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US20090095221A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US20090211707A1 (en) * 2008-02-22 2009-08-27 Hermes Systems Inc. Apparatus for gas distribution and its applications
US20100263588A1 (en) * 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
JP3160877U (ja) * 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
US9068265B2 (en) * 2011-02-01 2015-06-30 Applied Materials, Inc. Gas distribution plate with discrete protective elements
US8960235B2 (en) * 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus
CN102352492A (zh) * 2011-11-10 2012-02-15 中微半导体设备(上海)有限公司 一种带冷却系统的气体注入装置
CN103993293B (zh) * 2013-02-15 2018-06-26 诺发系统公司 带温度控制的多室喷头
CN203559126U (zh) * 2013-10-31 2014-04-23 沈阳拓荆科技有限公司 一种四分区式多气体独立通道的喷淋结构

Also Published As

Publication number Publication date
CN107523806A (zh) 2017-12-29
CN106796871A (zh) 2017-05-31
US20160068955A1 (en) 2016-03-10
SG11201701461TA (en) 2017-03-30
WO2016039909A1 (en) 2016-03-17
TW201622003A (zh) 2016-06-16
KR20170055506A (ko) 2017-05-19

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